页 49 - ISSI, Integrated Silicon Solution Inc 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS46TR81280B-15GBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PAR 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 667 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	Parallel	667 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 105°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
IS46TR16512AL-15HBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 8GBIT PAR 96LFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 667 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-LFBGA Supplier Device Package: 96-LFBGA (10x14)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	8Gbit	Parallel	667 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 105°C (TC)	Surface Mount	96-LFBGA	96-LFBGA (10x14)
IS43LR32320C-5BLI	ISSI, Integrated Silicon Solution Inc	1G, 1.8V, Mobile DDR, 32Mx32, 20 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 208 MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR	1Gbit	Parallel	208 MHz	14.4ns	5 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS66WVO16M8DBLL-133BLI-TR	ISSI, Integrated Silicon Solution Inc	128Mb, OctalRAM, 16Mbx8, 3.0V, 1 Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 128Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 37.5ns Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	Request a Quote	PSRAM	PSRAM (Pseudo SRAM)	128Mbit	SPI - Octal I/O	133 MHz	37.5ns	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS61WV10248EEBLL-10TLI-TR	ISSI, Integrated Silicon Solution Inc	8Mb,High-Speed/Low Power,Async w Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	8Mbit	Parallel	-	10ns	10 ns	2.4V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS43LR16128B-6BLI-TR	ISSI, Integrated Silicon Solution Inc	2G, 1.8V, Mobile DDR, 128Mx16, 1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (8x10)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR	2Gbit	Parallel	166 MHz	15ns	5 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (8x10)
IS43LR32320C-6BLI	ISSI, Integrated Silicon Solution Inc	1G, 1.8V, Mobile DDR, 32Mx32, 16 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR	1Gbit	Parallel	166 MHz	15ns	5 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS37SML01G1-MLI-TY	ISSI, Integrated Silicon Solution Inc	IC FLASH 1GBIT SPI 104MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gbit Memory Interface: SPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: - Access Time: 8 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	1Gbit	SPI	104 MHz	-	8 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IS43TR85120A-107MBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT PAR 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (9x10.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	4Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (9x10.5)
IS46TR16512B-125KBLA1-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 8G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (10x14)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	8Gbit	Parallel	800 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (10x14)
IS62C5128EL-45TLI-TR	ISSI, Integrated Silicon Solution Inc	4Mb,Low Power,Async,512K x 8,45n Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.400", 10.16mm Width) Supplier Device Package: 32-TSOP II	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	45ns	45 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	32-SOIC (0.400", 10.16mm Width)	32-TSOP II
IS43LR16160H-6BLI	ISSI, Integrated Silicon Solution Inc	256M, 1.8V, Mobile DDR, 16Mx16, Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 256Mbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (8x10)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR	256Mbit	Parallel	166 MHz	15ns	5.5 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (8x10)
IS25LX256-LHLE	ISSI, Integrated Silicon Solution Inc	256MB, OCTAL FLASH, 3V, 24-BALL Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 256Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 1.8ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	库存720	FLASH	FLASH	256Mbit	SPI - Octal I/O	133 MHz	1.8ms	6 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS46TR16256BL-107MBLA3-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT PAR 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	4Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 125°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS46TR16640B-107MBLA1-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PAR 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43LD32128A-25BPL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT HSUL 12 168VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	4Gbit	HSUL_12	400 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	0°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS43QR81024A-075VBL	ISSI, Integrated Silicon Solution Inc	8G, 1.2V, DDR4, 1Mx8, 2666MT/s @ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 1.333 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (10x14)	封装: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	Parallel	1.333 GHz	15ns	18 ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (10x14)
IS21TF16G-JCLI-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 128GBIT EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 128Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	128Gbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
IS25LP256E-RHLA3-TR	ISSI, Integrated Silicon Solution Inc	256Mb QPI/QSPI, 24-ball TFBGA 6x Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 256Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 50µs, 1ms Access Time: 6.5 ns Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	256Mbit	SPI - Quad I/O, QPI, DTR	166 MHz	50µs, 1ms	6.5 ns	2.3V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS43QR16512A-075VBL-TR	ISSI, Integrated Silicon Solution Inc	8G, 1.2V, DDR4, 512Mx16, 2666MT/ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 1.333 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (10x14)	封装: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	Parallel	1.333 GHz	15ns	18 ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (10x14)
IS21TF128G-JCLI-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 1TBIT EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
IS25LP080D-JNLA3	ISSI, Integrated Silicon Solution Inc	IC FLASH 8MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	库存7,419	FLASH	FLASH - NOR	8Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	800µs	-	2.3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS43TR81280B-125KBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	Parallel	800 MHz	15ns	20 ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
IS49RL18640-107EBLI	ISSI, Integrated Silicon Solution Inc	RLDRAM3 Memory, 1.15Gbit, x18, C Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 3 Memory Size: 1.152Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: - Access Time: 8 ns Voltage - Supply: 1.28V ~ 1.42V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 168-LBGA Supplier Device Package: 168-FBGA (13.5x13.5)	封装: -	Request a Quote	DRAM	RLDRAM 3	1.152Gbit	Parallel	933 MHz	-	8 ns	1.28V ~ 1.42V	-40°C ~ 95°C (TC)	Surface Mount	168-LBGA	168-FBGA (13.5x13.5)
IS43LQ32128AL-062BLI-TR	ISSI, Integrated Silicon Solution Inc	4G, 0.57-0.65V/1.06-1.17/1.70-1. Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 4Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-VFBGA Supplier Device Package: 200-VFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	4Gbit	LVSTL	1.6 GHz	-	-	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-VFBGA	200-VFBGA (10x14.5)
IS46LD32128C-25BPLA1	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT HSUL 12 168VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2	4Gbit	HSUL_12	400 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS46LD32128C-25BPLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT HSUL 12 168VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2	4Gbit	HSUL_12	400 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS43TR16512B-125KBLI-TR	ISSI, Integrated Silicon Solution Inc	8G, 1.5V, DDR3, 512Mx16, 1600MT/ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (10x14)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	8Gbit	Parallel	800 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (10x14)
IS46TR16640B-107MBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PAR 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS42S32200N-6BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 64MBIT PARALLEL 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封装: -	Request a Quote	DRAM	SDRAM	64Mbit	LVTTL	166 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)

IS46TR81280B-15GBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PAR 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 667 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

封装: -

Request a Quote

DRAM

SDRAM - DDR3

1Gbit

Parallel

667 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 105°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

IS46TR16512AL-15HBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 8GBIT PAR 96LFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 667 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Supplier Device Package: 96-LFBGA (10x14)

封装: -

Request a Quote

DRAM

SDRAM - DDR3L

8Gbit

Parallel

667 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 105°C (TC)

Surface Mount

96-LFBGA

96-LFBGA (10x14)

IS43LR32320C-5BLI

ISSI, Integrated Silicon Solution Inc

1G, 1.8V, Mobile DDR, 32Mx32, 20

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 208 MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR

1Gbit

Parallel

208 MHz

14.4ns

5 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS66WVO16M8DBLL-133BLI-TR

ISSI, Integrated Silicon Solution Inc

128Mb, OctalRAM, 16Mbx8, 3.0V, 1

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 128Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 37.5ns
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

Request a Quote

PSRAM

PSRAM (Pseudo SRAM)

128Mbit

SPI - Octal I/O

133 MHz

37.5ns

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS61WV10248EEBLL-10TLI-TR

ISSI, Integrated Silicon Solution Inc

8Mb,High-Speed/Low Power,Async w

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: -

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SRAM

SRAM - Asynchronous

8Mbit

Parallel

-

10ns

10 ns

2.4V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS43LR16128B-6BLI-TR

ISSI, Integrated Silicon Solution Inc

2G, 1.8V, Mobile DDR, 128Mx16, 1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x10)

封装: -

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DRAM

SDRAM - Mobile LPDDR

2Gbit

Parallel

166 MHz

15ns

5 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (8x10)

IS43LR32320C-6BLI

ISSI, Integrated Silicon Solution Inc

1G, 1.8V, Mobile DDR, 32Mx32, 16

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封装: -

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DRAM

SDRAM - Mobile LPDDR

1Gbit

Parallel

166 MHz

15ns

5 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS37SML01G1-MLI-TY

ISSI, Integrated Silicon Solution Inc

IC FLASH 1GBIT SPI 104MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gbit
Memory Interface: SPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: -
Access Time: 8 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: -

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FLASH

FLASH - NAND (SLC)

1Gbit

SPI

104 MHz

-

8 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IS43TR85120A-107MBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (9x10.5)

封装: -

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DRAM

SDRAM - DDR3

4Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (9x10.5)

IS46TR16512B-125KBLA1-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (10x14)

封装: -

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DRAM

SDRAM - DDR3

8Gbit

Parallel

800 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (10x14)

IS62C5128EL-45TLI-TR

ISSI, Integrated Silicon Solution Inc

4Mb,Low Power,Async,512K x 8,45n

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II

封装: -

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SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

45ns

45 ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

32-SOIC (0.400", 10.16mm Width)

32-TSOP II

IS43LR16160H-6BLI

ISSI, Integrated Silicon Solution Inc

256M, 1.8V, Mobile DDR, 16Mx16,

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x10)

封装: -

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DRAM

SDRAM - Mobile LPDDR

256Mbit

Parallel

166 MHz

15ns

5.5 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (8x10)

IS25LX256-LHLE

ISSI, Integrated Silicon Solution Inc

256MB, OCTAL FLASH, 3V, 24-BALL

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 256Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 1.8ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

库存720

FLASH

256Mbit

SPI - Octal I/O

133 MHz

1.8ms

6 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS46TR16256BL-107MBLA3-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: -

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DRAM

SDRAM - DDR3L

4Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 125°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS46TR16640B-107MBLA1-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PAR 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: -

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DRAM

SDRAM - DDR3

1Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43LD32128A-25BPL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封装: -

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DRAM

SDRAM - Mobile LPDDR2-S4

4Gbit

HSUL_12

400 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

0°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS43QR81024A-075VBL

ISSI, Integrated Silicon Solution Inc

8G, 1.2V, DDR4, 1Mx8, 2666MT/s @

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 1.333 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (10x14)

封装: -

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DRAM

SDRAM - DDR4

8Gbit

Parallel

1.333 GHz

15ns

18 ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (10x14)

IS21TF16G-JCLI-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 128GBIT EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 128Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封装: -

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FLASH

FLASH - NAND (TLC)

128Gbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

IS25LP256E-RHLA3-TR

ISSI, Integrated Silicon Solution Inc

256Mb QPI/QSPI, 24-ball TFBGA 6x

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 50µs, 1ms
Access Time: 6.5 ns
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

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FLASH

FLASH - NOR (SLC)

256Mbit

SPI - Quad I/O, QPI, DTR

166 MHz

50µs, 1ms

6.5 ns

2.3V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS43QR16512A-075VBL-TR

ISSI, Integrated Silicon Solution Inc

8G, 1.2V, DDR4, 512Mx16, 2666MT/

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 1.333 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (10x14)

封装: -

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DRAM

SDRAM - DDR4

8Gbit

Parallel

1.333 GHz

15ns

18 ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (10x14)

IS21TF128G-JCLI-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 1TBIT EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封装: -

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FLASH

FLASH - NAND (TLC)

1Tbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

IS25LP080D-JNLA3

ISSI, Integrated Silicon Solution Inc

IC FLASH 8MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

库存7,419

FLASH

FLASH - NOR

8Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

800µs

-

2.3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS43TR81280B-125KBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

封装: -

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DRAM

SDRAM - DDR3

1Gbit

Parallel

800 MHz

15ns

20 ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

IS49RL18640-107EBLI

ISSI, Integrated Silicon Solution Inc

RLDRAM3 Memory, 1.15Gbit, x18, C

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 3
Memory Size: 1.152Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: -
Access Time: 8 ns
Voltage - Supply: 1.28V ~ 1.42V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-LBGA
Supplier Device Package: 168-FBGA (13.5x13.5)

封装: -

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DRAM

RLDRAM 3

1.152Gbit

Parallel

933 MHz

-

8 ns

1.28V ~ 1.42V

-40°C ~ 95°C (TC)

Surface Mount

168-LBGA

168-FBGA (13.5x13.5)

IS43LQ32128AL-062BLI-TR

ISSI, Integrated Silicon Solution Inc

4G, 0.57-0.65V/1.06-1.17/1.70-1.

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 4Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-VFBGA
Supplier Device Package: 200-VFBGA (10x14.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR4X

4Gbit

LVSTL

1.6 GHz

-

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-VFBGA

200-VFBGA (10x14.5)

IS46LD32128C-25BPLA1

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封装: -

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DRAM

SDRAM - Mobile LPDDR2

4Gbit

HSUL_12

400 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS46LD32128C-25BPLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封装: -

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DRAM

SDRAM - Mobile LPDDR2

4Gbit

HSUL_12

400 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS43TR16512B-125KBLI-TR

ISSI, Integrated Silicon Solution Inc

8G, 1.5V, DDR3, 512Mx16, 1600MT/

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (10x14)

封装: -

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DRAM

SDRAM - DDR3

8Gbit

Parallel

800 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (10x14)

IS46TR16640B-107MBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PAR 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: -

Request a Quote

DRAM

SDRAM - DDR3

1Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS42S32200N-6BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封装: -

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DRAM

SDRAM

64Mbit

LVTTL

166 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)