页 23 - ISSI, Integrated Silicon Solution Inc 产品 - 存储器 | 深圳黑森尔电子
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ISSI, Integrated Silicon Solution Inc 产品 - 存储器

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图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS43TR85120BL-125KBLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PARALLEL 78TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (9x10.5)
封装: -
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DRAM
SDRAM - DDR3L
4Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (9x10.5)
IS49NLC36800A-25EWBL
ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 288Mbit, x36, Co

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: RLDRAM 2
  • Memory Size: 288Mbit
  • Memory Interface: HSTL
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 15 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 144-TFBGA
  • Supplier Device Package: 144-TWBGA (11x18.5)
封装: -
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DRAM
RLDRAM 2
288Mbit
HSTL
400 MHz
-
15 ns
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-TWBGA (11x18.5)
IS61WV102416FBLL-10B2LI-TR
ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed,Async,1Mbx16, 10

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
封装: -
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SRAM
SRAM - Asynchronous
16Mbit
Parallel
-
10ns
10 ns
2.4V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
IS29GL256-70DLEB-TR
ISSI, Integrated Silicon Solution Inc

256Mb, 64 Ball BGA(9X9mm), 3V, R

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns, 200µs
  • Access Time: 70 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-LFBGA (9x9)
封装: -
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FLASH
FLASH - NOR (SLC)
256Mbit
CFI
-
70ns, 200µs
70 ns
3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
64-LBGA
64-LFBGA (9x9)
IS21TF16G-JCLI
ISSI, Integrated Silicon Solution Inc

IC FLASH 128GBIT EMMC 153VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 128Gbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-VFBGA (11.5x13)
封装: -
库存111
FLASH
FLASH - NAND (TLC)
128Gbit
eMMC_5.1
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
153-VFBGA
153-VFBGA (11.5x13)
IS43TR16256BL-107MBL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
封装: -
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DRAM
SDRAM - DDR3L
4Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS43LQ32128AL-062TBLI
ISSI, Integrated Silicon Solution Inc

4G, 0.57-0.65V/1.06-1.17/1.70-1.

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
封装: -
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DRAM
SDRAM - Mobile LPDDR4X
4Gbit
LVSTL
1.6 GHz
-
-
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 95°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
IS45S16400N-7BLA1-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 54TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
封装: -
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DRAM
SDRAM
64Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS64WV10248EEBLL-10CTLA3
ISSI, Integrated Silicon Solution Inc

8Mb,High-Speed-Automotive,Async

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封装: -
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SRAM
SRAM - Asynchronous
8Mbit
Parallel
-
10ns
10 ns
2.4V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS43TR16512B-107MBL
ISSI, Integrated Silicon Solution Inc

8G, 1.5V, DDR3, 512Mx16, 1866MT/

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (10x14)
封装: -
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DRAM
SDRAM - DDR3
8Gbit
Parallel
933 MHz
15ns
20 ns
1.425V ~ 1.575V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (10x14)
IS43TR16640B-093NBL
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PAR 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.066 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
封装: -
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DRAM
SDRAM - DDR3
1Gbit
Parallel
1.066 GHz
15ns
20 ns
1.425V ~ 1.575V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS46TR16640CL-107MBLA3-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PAR 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
封装: -
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DRAM
SDRAM - DDR3L
1Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 125°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS62WV102416ALL-35MI
ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT PAR 48MINIBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 1.65V ~ 2.2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-miniBGA (9x11)
封装: -
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SRAM
SRAM - Asynchronous
16Mbit
Parallel
-
35ns
35 ns
1.65V ~ 2.2V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-miniBGA (9x11)
IS25LQ025B-JULE
ISSI, Integrated Silicon Solution Inc

IC FLASH 256KBIT SPI/QUAD 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Kbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 800µs
  • Access Time: 8 ns
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-USON (2x3)
封装: -
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FLASH
FLASH - NOR
256Kbit
SPI - Quad I/O
104 MHz
800µs
8 ns
2.3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-USON (2x3)
IS64LF25636B-7-5TQLA3
ISSI, Integrated Silicon Solution Inc

9Mb,Flowthrough,Sync,256K x 36,1

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 9Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 117 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
封装: -
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SRAM
SRAM - Standard
9Mbit
Parallel
117 MHz
-
7.5 ns
3.135V ~ 3.465V
-40°C ~ 125°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
IS25LQ025B-JVLE
ISSI, Integrated Silicon Solution Inc

IC FLASH 256KBIT SPI/QUAD 8VVSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Kbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 800µs
  • Access Time: 8 ns
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-VVSOP
封装: -
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FLASH
FLASH - NOR
256Kbit
SPI - Quad I/O
104 MHz
800µs
8 ns
2.3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-VVSOP
IS46TR16512BL-125KBLA1-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (10x14)
封装: -
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DRAM
SDRAM - DDR3L
8Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (10x14)
IS25LQ010B-JVLE
ISSI, Integrated Silicon Solution Inc

IC FLASH 1MBIT SPI/QUAD 8VVSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 800µs
  • Access Time: 8 ns
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-VVSOP
封装: -
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FLASH
FLASH - NOR
1Mbit
SPI - Quad I/O
104 MHz
800µs
8 ns
2.3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-VVSOP
IS25LX128-JHLA3-TR
ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT SPI/OCT 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Octal I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
封装: -
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FLASH
FLASH
128Mbit
SPI - Octal I/O
133 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS25LQ010B-JULE
ISSI, Integrated Silicon Solution Inc

IC FLASH 1MBIT SPI/QUAD 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 800µs
  • Access Time: 8 ns
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-USON (2x3)
封装: -
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FLASH
FLASH - NOR
1Mbit
SPI - Quad I/O
104 MHz
800µs
8 ns
2.3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-USON (2x3)
IS45S16400N-7BLA2-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 54TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
封装: -
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DRAM
SDRAM
64Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS65WV102416EBLL-55BLA3
ISSI, Integrated Silicon Solution Inc

16Mb, Low Power/Power Saver,Asyn

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 2.2V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
封装: -
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SRAM
SRAM - Asynchronous
16Mbit
Parallel
-
55ns
55 ns
2.2V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
IS43TR81024BL-107MBLI-TR
ISSI, Integrated Silicon Solution Inc

8G, 1.35V, DDR3L, 1Gx8, 1866MT/s

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (10x14)
封装: -
Request a Quote
DRAM
SDRAM - DDR3L
8Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (10x14)
IS46TR16512A-125KBLA2
ISSI, Integrated Silicon Solution Inc

IC DRAM 8GBIT PARALLEL 96LFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-LFBGA
  • Supplier Device Package: 96-LFBGA (10x14)
封装: -
Request a Quote
DRAM
SDRAM - DDR3
8Gbit
Parallel
800 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 105°C (TC)
Surface Mount
96-LFBGA
96-LFBGA (10x14)
IS43LR16128B-6BLI
ISSI, Integrated Silicon Solution Inc

2G, 1.8V, Mobile DDR, 128Mx16, 1

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (8x10)
封装: -
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DRAM
SDRAM - Mobile LPDDR
2Gbit
Parallel
166 MHz
15ns
5 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (8x10)
IS43TR81024BL-107MBL
ISSI, Integrated Silicon Solution Inc

8G, 1.35V, DDR3L, 1Gx8, 1866MT/s

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (10x14)
封装: -
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DRAM
SDRAM - DDR3L
8Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (10x14)
IS25WX512M-JHLA3
ISSI, Integrated Silicon Solution Inc

IC FLASH 512MBIT SPI/OCT 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Octal I/O
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
封装: -
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FLASH
FLASH
512Mbit
SPI - Octal I/O
200 MHz
-
-
1.7V ~ 2V
-40°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS46TR16640BL-107MBLA1-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PAR 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
封装: -
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DRAM
SDRAM - DDR3L
1Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS43LQ16128AL-062TBLI
ISSI, Integrated Silicon Solution Inc

2G, 0.57-0.65V/1.06-1.17/1.70-1.

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 2Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
封装: -
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DRAM
SDRAM - Mobile LPDDR4X
2Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 95°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
IS42S81600J-6TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 54TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封装: -
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DRAM
SDRAM
128Mbit
LVTTL
166 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II