页 175 - ISSI, Integrated Silicon Solution Inc 产品 - 存储器 | 深圳黑森尔电子
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ISSI, Integrated Silicon Solution Inc 产品 - 存储器

记录 5,873
页  175/196
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS42S16100F-5TL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 200MHZ 50TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 50-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 50-TSOP II
封装: 50-TSOP (0.400", 10.16mm Width)
库存4,720
DRAM
SDRAM
16Mb (1M x 16)
Parallel
200MHz
-
5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
50-TSOP (0.400", 10.16mm Width)
50-TSOP II
IS42S16100E-6BL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 166MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (6.4x10.1)
封装: 60-TFBGA
库存4,432
DRAM
SDRAM
16Mb (1M x 16)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (6.4x10.1)
IS42S16100E-6BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 166MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (6.4x10.1)
封装: 60-TFBGA
库存5,872
DRAM
SDRAM
16Mb (1M x 16)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (6.4x10.1)
IS42S16100E-6BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 166MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (6.4x10.1)
封装: 60-TFBGA
库存6,816
DRAM
SDRAM
16Mb (1M x 16)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (6.4x10.1)
IS42S16100E-6BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 166MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (6.4x10.1)
封装: 60-TFBGA
库存2,320
DRAM
SDRAM
16Mb (1M x 16)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (6.4x10.1)
IS42RM32800D-75BL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封装: 90-TFBGA
库存4,704
DRAM
SDRAM - Mobile
256Mb (8M x 32)
Parallel
133MHz
-
5.4ns
2.3 V ~ 3 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS42RM32800D-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封装: 90-TFBGA
库存2,576
DRAM
SDRAM - Mobile
256Mb (8M x 32)
Parallel
133MHz
-
5.4ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS42RM32800D-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封装: 90-TFBGA
库存5,280
DRAM
SDRAM - Mobile
256Mb (8M x 32)
Parallel
133MHz
-
5.4ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS42RM32800D-75BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封装: 90-TFBGA
库存6,112
DRAM
SDRAM - Mobile
256Mb (8M x 32)
Parallel
133MHz
-
5.4ns
2.3 V ~ 3 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS42RM32400G-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封装: 90-TFBGA
库存6,000
DRAM
SDRAM - Mobile
128Mb (4M x 32)
Parallel
133MHz
-
6ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS42RM32400G-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封装: 90-TFBGA
库存7,936
DRAM
SDRAM - Mobile
128Mb (4M x 32)
Parallel
133MHz
-
6ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS42RM32160C-75BL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-LFBGA
  • Supplier Device Package: 90-WBGA (8x13)
封装: 90-LFBGA
库存6,400
DRAM
SDRAM - Mobile
512Mb (16M x 32)
Parallel
133MHz
-
5.4ns
2.3 V ~ 3 V
0°C ~ 70°C (TA)
Surface Mount
90-LFBGA
90-WBGA (8x13)
IS42RM32160C-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-LFBGA
  • Supplier Device Package: 90-WBGA (8x13)
封装: 90-LFBGA
库存6,096
DRAM
SDRAM - Mobile
512Mb (16M x 32)
Parallel
133MHz
-
5.4ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
90-LFBGA
90-WBGA (8x13)
IS42RM32160C-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-LFBGA
  • Supplier Device Package: 90-WBGA (8x13)
封装: 90-LFBGA
库存3,456
DRAM
SDRAM - Mobile
512Mb (16M x 32)
Parallel
133MHz
-
5.4ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
90-LFBGA
90-WBGA (8x13)
IS42RM32160C-75BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-LFBGA
  • Supplier Device Package: 90-WBGA (8x13)
封装: 90-LFBGA
库存2,304
DRAM
SDRAM - Mobile
512Mb (16M x 32)
Parallel
133MHz
-
5.4ns
2.3 V ~ 3 V
0°C ~ 70°C (TA)
Surface Mount
90-LFBGA
90-WBGA (8x13)
IS42RM16800G-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
封装: 54-TFBGA
库存5,104
DRAM
SDRAM - Mobile
128Mb (8M x 16)
Parallel
133MHz
-
6ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS42RM16800G-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
封装: 54-TFBGA
库存4,944
DRAM
SDRAM - Mobile
128Mb (8M x 16)
Parallel
133MHz
-
6ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS42RM16160E-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
封装: 54-TFBGA
库存2,816
DRAM
SDRAM - Mobile
256Mb (16M x 16)
Parallel
133MHz
-
6ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS42RM16160E-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
封装: 54-TFBGA
库存2,384
DRAM
SDRAM - Mobile
256Mb (16M x 16)
Parallel
133MHz
-
6ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS42RM16160E-6BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
封装: 54-TFBGA
库存4,304
DRAM
SDRAM - Mobile
256Mb (16M x 16)
Parallel
166MHz
-
5.5ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS42RM16160E-6BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
封装: 54-TFBGA
库存7,312
DRAM
SDRAM - Mobile
256Mb (16M x 16)
Parallel
166MHz
-
5.5ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS41LV16257C-35TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
封装: 44-TSOP (0.400", 10.16mm Width), 40 Leads
库存6,416
DRAM
DRAM - FP
4Mb (256K x 16)
Parallel
-
-
18ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
IS41LV16257C-35TLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
封装: 44-TSOP (0.400", 10.16mm Width), 40 Leads
库存4,672
DRAM
DRAM - FP
4Mb (256K x 16)
Parallel
-
-
18ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
IS41LV16256C-35TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
封装: 44-TSOP (0.400", 10.16mm Width), 40 Leads
库存7,728
DRAM
DRAM - EDO
4Mb (256K x 16)
Parallel
-
-
18ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
hot IS41LV16256C-35TLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
封装: 44-TSOP (0.400", 10.16mm Width), 40 Leads
库存12,960
DRAM
DRAM - EDO
4Mb (256K x 16)
Parallel
-
-
18ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
IS41LV16105C-50TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封装: 44-TSOP (0.400", 10.16mm Width)
库存6,432
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS41LV16105C-50KLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm)
  • Supplier Device Package: 42-SOJ
封装: 42-BSOJ (0.400", 10.16mm)
库存6,384
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm)
42-SOJ
IS41LV16105C-50KLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm)
  • Supplier Device Package: 42-SOJ
封装: 42-BSOJ (0.400", 10.16mm)
库存5,136
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm)
42-SOJ
IS41LV16100C-50TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封装: 44-TSOP (0.400", 10.16mm Width)
库存7,840
DRAM
DRAM - EDO
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot IS41LV16100C-50KLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm)
  • Supplier Device Package: 42-SOJ
封装: 42-BSOJ (0.400", 10.16mm)
库存4,336
DRAM
DRAM - EDO
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm)
42-SOJ