页 16 - ISSI, Integrated Silicon Solution Inc 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS34ML02G081-TLI	ISSI, Integrated Silicon Solution Inc	2 Gbit(x8, 1 bit ECC), TSOP-48, Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 20 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	Parallel	-	25ns	20 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS42S16400N-7TLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 64MBIT PAR 54TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: -	Request a Quote	DRAM	SDRAM	64Mbit	LVTTL	143 MHz	-	5.4 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS64LF25636B-7-5TQLA3-TR	ISSI, Integrated Silicon Solution Inc	9Mb,Flowthrough,Sync,256K x 36,1 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 9Mbit Memory Interface: Parallel Clock Frequency: 117 MHz Write Cycle Time - Word, Page: - Access Time: 7.5 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	封装: -	Request a Quote	SRAM	SRAM - Standard	9Mbit	Parallel	117 MHz	-	7.5 ns	3.135V ~ 3.465V	-40°C ~ 125°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS62WV51216HBLL-45BLI	ISSI, Integrated Silicon Solution Inc	8Mb, Low Power/Power Saver,Async Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	8Mbit	Parallel	-	45ns	45 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
IS25WP01GG-RHLE	ISSI, Integrated Silicon Solution Inc	1GB QPI/QSPI, 24-BALL LFBGA 6X8M Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 70µs Access Time: 6 ns Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI, DTR	133 MHz	70µs	6 ns	1.65V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS62WV12816FBLL-45BLI-TR	ISSI, Integrated Silicon Solution Inc	2Mb, Low Power/Power Saver,Async Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	2Mbit	Parallel	-	45ns	45 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS43TR16512S2DL-125KBLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 8GBIT PARALLEL 96LWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-LFBGA Supplier Device Package: 96-LWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	8Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-LFBGA	96-LWBGA (9x13)
IS43LQ16128AL-062BLI-TR	ISSI, Integrated Silicon Solution Inc	2G, 0.57-0.65V/1.06-1.17/1.70-1. Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-VFBGA Supplier Device Package: 200-VFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	2Gbit	LVSTL	1.6 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-VFBGA	200-VFBGA (10x14.5)
IS46TR85120AL-107MBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT PAR 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (9x10.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	4Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 105°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (9x10.5)
IS25WX256-JHLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 256MBIT SPI/OCT 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 256Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	Request a Quote	FLASH	FLASH	256Mbit	SPI - Octal I/O	200 MHz	-	-	1.7V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS49NLS18160A-18WBL	ISSI, Integrated Silicon Solution Inc	RLDRAM2 Memory, 288Mbit, x18, Se Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 2 Memory Size: 288Mbit Memory Interface: HSTL Clock Frequency: 533 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-TWBGA (11x18.5)	封装: -	Request a Quote	DRAM	RLDRAM 2	288Mbit	HSTL	533 MHz	-	15 ns	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-TWBGA (11x18.5)
IS25WJ064F-JBLE-TR	ISSI, Integrated Silicon Solution Inc	64MB, QPI/QSPI, 8-PIN SOP 208MIL Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 50µs, 1.6ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	64Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	50µs, 1.6ms	6 ns	1.65V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
IS43LD32800B-25BLI	ISSI, Integrated Silicon Solution Inc	256M, 1.2/1.8V, LPDDR2, 8Mx32, 4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 256Mbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	256Mbit	HSUL_12	400 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS66WVQ4M4DBLL-133BLI	ISSI, Integrated Silicon Solution Inc	IC PSRAM 16MBIT SPI/QUAD 24TFBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 16Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 37.5ns Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	库存1,074	PSRAM	PSRAM (Pseudo SRAM)	16Mbit	SPI - Quad I/O	133 MHz	37.5ns	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS61WV102416FBLL-8BLI-TR	ISSI, Integrated Silicon Solution Inc	16Mb,High-Speed,Async,1Mbx16, 8n Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 8ns Access Time: 8 ns Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	16Mbit	Parallel	-	8ns	8 ns	2.4V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS46TR16640CL-125JBLA1-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	1Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS46TR16128DL-125KBLA25-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 115°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	2Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 115°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS61WV20488FBLL-10T2LI	ISSI, Integrated Silicon Solution Inc	16Mb,High-Speed,Async,2Mbx8,10ns Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	16Mbit	Parallel	-	10ns	10 ns	2.4V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS61LPS12836EC-200B3I	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: 3.1 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封装: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	4Mbit	Parallel	200 MHz	-	3.1 ns	3.135V ~ 3.465V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61WV25616FBLL-10TLI	ISSI, Integrated Silicon Solution Inc	4Mb,High-Speed/Low Power,Async,2 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	10ns	10 ns	2.4V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS42S16800J-6TL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128MBIT PAR 54TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: -	Request a Quote	DRAM	SDRAM	128Mbit	LVTTL	166 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS43QR16512A-075VBLI	ISSI, Integrated Silicon Solution Inc	8G, 1.2V, DDR4, 512Mx16, 2666MT/ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 1.333 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (10x14)	封装: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	Parallel	1.333 GHz	15ns	18 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (10x14)
IS25WP128F-RHLA3	ISSI, Integrated Silicon Solution Inc	128Mb QPI/QSPI, 24-ball TFBGA 6x Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 40µs, 800µs Access Time: 5.5 ns Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	128Mbit	SPI - Quad I/O, QPI, DTR	166 MHz	40µs, 800µs	5.5 ns	1.65V ~ 1.95V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS64WV51216EEBLL-10B2LA3	ISSI, Integrated Silicon Solution Inc	8Mb,High-Speed/Low Power,Async w Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	8Mbit	Parallel	-	10ns	10 ns	2.4V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS25LX128-JHLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 128MBIT SPI/OCT 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 128Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	库存873	FLASH	FLASH	128Mbit	SPI - Octal I/O	133 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS43DR81280C-25DBL-TR	ISSI, Integrated Silicon Solution Inc	1G, 1.8V, DDR2, 128Mx8, 400Mhz @ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gbit Memory Interface: SSTL_18 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 400 ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR2	1Gbit	SSTL_18	400 MHz	15ns	400 ps	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS46TR16640CL-125JBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	1Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43LR16320C-5BLI-TR	ISSI, Integrated Silicon Solution Inc	512M, 1.8V, Mobile DDR, 32Mx16, Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 512Mbit Memory Interface: LVCMOS Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (8x10)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR	512Mbit	LVCMOS	200 MHz	15ns	5 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (8x10)
IS25LP256H-JLLE	ISSI, Integrated Silicon Solution Inc	256Mb QPI/QSPI, 8-pin WSON 6X8MM Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 256Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 50µs, 1ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	256Mbit	SPI - Quad I/O, QPI, DTR	166 MHz	50µs, 1ms	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
IS22TF16G-JCLA1-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 128GBIT EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 128Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	128Gbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)

IS34ML02G081-TLI

ISSI, Integrated Silicon Solution Inc

2 Gbit(x8, 1 bit ECC), TSOP-48,

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 20 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: -

Request a Quote

FLASH

FLASH - NAND (SLC)

2Gbit

Parallel

-

25ns

20 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS42S16400N-7TLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 54TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: -

Request a Quote

DRAM

SDRAM

64Mbit

LVTTL

143 MHz

-

5.4 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IS64LF25636B-7-5TQLA3-TR

ISSI, Integrated Silicon Solution Inc

9Mb,Flowthrough,Sync,256K x 36,1

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 9Mbit
Memory Interface: Parallel
Clock Frequency: 117 MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

封装: -

Request a Quote

SRAM

SRAM - Standard

9Mbit

Parallel

117 MHz

-

7.5 ns

3.135V ~ 3.465V

-40°C ~ 125°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS62WV51216HBLL-45BLI

ISSI, Integrated Silicon Solution Inc

8Mb, Low Power/Power Saver,Async

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

8Mbit

Parallel

-

45ns

45 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

IS25WP01GG-RHLE

ISSI, Integrated Silicon Solution Inc

1GB QPI/QSPI, 24-BALL LFBGA 6X8M

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 70µs
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

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FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI, DTR

133 MHz

70µs

6 ns

1.65V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS62WV12816FBLL-45BLI-TR

ISSI, Integrated Silicon Solution Inc

2Mb, Low Power/Power Saver,Async

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封装: -

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SRAM

SRAM - Asynchronous

2Mbit

Parallel

-

45ns

45 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS43TR16512S2DL-125KBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 8GBIT PARALLEL 96LWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Supplier Device Package: 96-LWBGA (9x13)

封装: -

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DRAM

SDRAM - DDR3L

8Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-LFBGA

96-LWBGA (9x13)

IS43LQ16128AL-062BLI-TR

ISSI, Integrated Silicon Solution Inc

2G, 0.57-0.65V/1.06-1.17/1.70-1.

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-VFBGA
Supplier Device Package: 200-VFBGA (10x14.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR4X

2Gbit

LVSTL

1.6 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-VFBGA

200-VFBGA (10x14.5)

IS46TR85120AL-107MBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (9x10.5)

封装: -

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DRAM

SDRAM - DDR3L

4Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 105°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (9x10.5)

IS25WX256-JHLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 256MBIT SPI/OCT 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 256Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

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FLASH

256Mbit

SPI - Octal I/O

200 MHz

-

1.7V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS49NLS18160A-18WBL

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 288Mbit, x18, Se

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 2
Memory Size: 288Mbit
Memory Interface: HSTL
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-TWBGA (11x18.5)

封装: -

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DRAM

RLDRAM 2

288Mbit

HSTL

533 MHz

-

15 ns

1.7V ~ 1.9V

0°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-TWBGA (11x18.5)

IS25WJ064F-JBLE-TR

ISSI, Integrated Silicon Solution Inc

64MB, QPI/QSPI, 8-PIN SOP 208MIL

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 50µs, 1.6ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: -

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FLASH

FLASH - NOR (SLC)

64Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

50µs, 1.6ms

6 ns

1.65V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

IS43LD32800B-25BLI

ISSI, Integrated Silicon Solution Inc

256M, 1.2/1.8V, LPDDR2, 8Mx32, 4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 256Mbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR2-S4

256Mbit

HSUL_12

400 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS66WVQ4M4DBLL-133BLI

ISSI, Integrated Silicon Solution Inc

IC PSRAM 16MBIT SPI/QUAD 24TFBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 37.5ns
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

库存1,074

PSRAM

PSRAM (Pseudo SRAM)

16Mbit

SPI - Quad I/O

133 MHz

37.5ns

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS61WV102416FBLL-8BLI-TR

ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed,Async,1Mbx16, 8n

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 8ns
Access Time: 8 ns
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封装: -

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SRAM

SRAM - Asynchronous

16Mbit

Parallel

-

8ns

8 ns

2.4V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS46TR16640CL-125JBLA1-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: -

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DRAM

SDRAM - DDR3L

1Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS46TR16128DL-125KBLA25-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 115°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: -

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DRAM

SDRAM - DDR3L

2Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 115°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS61WV20488FBLL-10T2LI

ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed,Async,2Mbx8,10ns

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: -

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SRAM

SRAM - Asynchronous

16Mbit

Parallel

-

10ns

10 ns

2.4V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IS61LPS12836EC-200B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封装: -

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SRAM

SRAM - Synchronous, SDR

4Mbit

Parallel

200 MHz

-

3.1 ns

3.135V ~ 3.465V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61WV25616FBLL-10TLI

ISSI, Integrated Silicon Solution Inc

4Mb,High-Speed/Low Power,Async,2

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: -

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SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

10ns

10 ns

2.4V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS42S16800J-6TL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 54TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: -

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DRAM

SDRAM

128Mbit

LVTTL

166 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IS43QR16512A-075VBLI

ISSI, Integrated Silicon Solution Inc

8G, 1.2V, DDR4, 512Mx16, 2666MT/

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 1.333 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (10x14)

封装: -

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DRAM

SDRAM - DDR4

8Gbit

Parallel

1.333 GHz

15ns

18 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (10x14)

IS25WP128F-RHLA3

ISSI, Integrated Silicon Solution Inc

128Mb QPI/QSPI, 24-ball TFBGA 6x

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 40µs, 800µs
Access Time: 5.5 ns
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

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FLASH

FLASH - NOR (SLC)

128Mbit

SPI - Quad I/O, QPI, DTR

166 MHz

40µs, 800µs

5.5 ns

1.65V ~ 1.95V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS64WV51216EEBLL-10B2LA3

ISSI, Integrated Silicon Solution Inc

8Mb,High-Speed/Low Power,Async w

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封装: -

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SRAM

SRAM - Asynchronous

8Mbit

Parallel

-

10ns

10 ns

2.4V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS25LX128-JHLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT SPI/OCT 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 128Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

库存873

FLASH

128Mbit

SPI - Octal I/O

133 MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS43DR81280C-25DBL-TR

ISSI, Integrated Silicon Solution Inc

1G, 1.8V, DDR2, 128Mx8, 400Mhz @

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gbit
Memory Interface: SSTL_18
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400 ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

封装: -

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DRAM

SDRAM - DDR2

1Gbit

SSTL_18

400 MHz

15ns

400 ps

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS46TR16640CL-125JBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: -

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DRAM

SDRAM - DDR3L

1Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43LR16320C-5BLI-TR

ISSI, Integrated Silicon Solution Inc

512M, 1.8V, Mobile DDR, 32Mx16,

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mbit
Memory Interface: LVCMOS
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x10)

封装: -

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DRAM

SDRAM - Mobile LPDDR

512Mbit

LVCMOS

200 MHz

15ns

5 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (8x10)

IS25LP256H-JLLE

ISSI, Integrated Silicon Solution Inc

256Mb QPI/QSPI, 8-pin WSON 6X8MM

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 50µs, 1ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

封装: -

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FLASH

FLASH - NOR (SLC)

256Mbit

SPI - Quad I/O, QPI, DTR

166 MHz

50µs, 1ms

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

IS22TF16G-JCLA1-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 128GBIT EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 128Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封装: -

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FLASH

FLASH - NAND (TLC)

128Gbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)