页 5 - GeneSiC Semiconductor 产品

零件编号	制造商	描述	封装	库存
MBRH24035R	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 240A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	封装: D-67	库存5,904
MURH7020	GeneSiC Semiconductor	DIODE FAST 200V 70A D-67 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	封装: D-67	库存2,144
S300JR	GeneSiC Semiconductor	DIODE GEN REV 600V 300A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	封装: DO-205AB, DO-9, Stud	库存4,784
GKR130/16	GeneSiC Semiconductor	DIODE GEN PURP 1.6KV 165A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 165A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 22mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 180°C	封装: DO-205AA, DO-8, Stud	库存3,232
MBR8080R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 80V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 840mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 80V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-203AB, DO-5, Stud	库存5,472
MBR6040	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 60A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AB, DO-5, Stud	库存4,288
MUR2505	GeneSiC Semiconductor	DIODE GEN PURP 50V 25A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1V @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存5,392
1N1188A	GeneSiC Semiconductor	DIODE GEN PURP 400V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-203AB, DO-5, Stud	库存4,176
1N2128A	GeneSiC Semiconductor	DIODE GEN PURP 50V 60A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-203AB, DO-5, Stud	库存7,392
1N3212R	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 15A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-203AB, DO-5, Stud	库存6,624
1N3212	GeneSiC Semiconductor	DIODE GEN PURP 400V 15A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-203AB, DO-5, Stud	库存3,344
MBRF20080R	GeneSiC Semiconductor	DIODE SCHOTTKY 80V 100A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 80V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	封装: TO-244AB	库存7,200
FST6310M	GeneSiC Semiconductor	DIODE SCHOTTKY 10V 30A D61-3M Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 10V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: D61-3M Supplier Device Package: D61-3M	封装: D61-3M	库存2,480
MBR30035CTL	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 150A 2 TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 35V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封装: Twin Tower	库存5,056
MBRF40035R	GeneSiC Semiconductor	DIODE MODULE 35V 400A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	封装: TO-244AB	库存3,120
MBR40080CTR	GeneSiC Semiconductor	DIODE MODULE 80V 400A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封装: Twin Tower	库存5,648
MURT10060	GeneSiC Semiconductor	DIODE ARRAY GP 600V 100A 3TOWER Diode Configuration: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -40°C ~ 175°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封装: Three Tower	库存2,784
MBR20020CT	GeneSiC Semiconductor	DIODE MODULE 20V 200A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封装: Twin Tower	库存3,232
MBR400150CTR	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 200A 2 TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 150V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封装: Twin Tower	库存7,648
MBRT30030R	GeneSiC Semiconductor	DIODE MODULE 30V 300A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封装: Three Tower	库存4,864
FST10040	GeneSiC Semiconductor	DIODE MODULE 40V 100A TO249AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-249AB Supplier Device Package: TO-249AB	封装: TO-249AB	库存7,760
MSRT150160(A)D	GeneSiC Semiconductor	DIODE GEN 1.6KV 150A 3 TOWER Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1600V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封装: Three Tower	库存2,896
MBR2X100A120	GeneSiC Semiconductor	DIODE SCHOTTKY 120V 100A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 120V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	封装: SOT-227-4, miniBLOC	库存7,584
MUR2X030A10	GeneSiC Semiconductor	DIODE GEN PURP 1000V 60A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 2.35V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85ns Current - Reverse Leakage @ Vr: 25µA @ 1000V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	封装: SOT-227-4, miniBLOC	库存7,680
KBPC35005T	GeneSiC Semiconductor	DIODE BRIDGE 50V 35A KBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, KBPC-T Supplier Device Package: KBPC	封装: 4-Square, KBPC-T	库存2,496
KBPC1508W	GeneSiC Semiconductor	DIODE BRIDGE 15A 800V 1PH KBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Supplier Device Package: KBPC-W	封装: 4-Square, KBPC-W	库存2,272
KBJ2502G	GeneSiC Semiconductor	DIODE BRIDGE 200V 25A KBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBJ Supplier Device Package: KBJ	封装: 4-SIP, KBJ	库存2,100
BR62	GeneSiC Semiconductor	DIODE BRIDGE 200V 6A BR-6 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, BR-6 Supplier Device Package: BR-6	封装: 4-Square, BR-6	库存17,544
MSRTA200120AD	GeneSiC Semiconductor	DIODE MODULE GP 1.2KV 3TOWER Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封装: -	Request a Quote
GC05MPS33J	GeneSiC Semiconductor	DIODE SIL CARB 3.3KV 5A TO263-7 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 3300 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Supplier Device Package: TO-263-7 Operating Temperature - Junction: 175°C	封装: -	库存5,040

MBRH24035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 240A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

封装: D-67

库存5,904

MURH7020

GeneSiC Semiconductor

DIODE FAST 200V 70A D-67

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

封装: D-67

库存2,144

S300JR

GeneSiC Semiconductor

DIODE GEN REV 600V 300A DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 200°C

封装: DO-205AB, DO-9, Stud

库存4,784

GKR130/16

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 165A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 165A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 22mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 180°C

封装: DO-205AA, DO-8, Stud

库存3,232

MBR8080R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 80V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-203AB, DO-5, Stud

库存5,472

MBR6040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 60A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AB, DO-5, Stud

库存4,288

MUR2505

GeneSiC Semiconductor

DIODE GEN PURP 50V 25A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存5,392

1N1188A

GeneSiC Semiconductor

DIODE GEN PURP 400V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-203AB, DO-5, Stud

库存4,176

1N2128A

GeneSiC Semiconductor

DIODE GEN PURP 50V 60A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-203AB, DO-5, Stud

库存7,392

1N3212R

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 15A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AB, DO-5, Stud

库存6,624

1N3212

GeneSiC Semiconductor

DIODE GEN PURP 400V 15A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AB, DO-5, Stud

库存3,344

MBRF20080R

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 100A TO244AB

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 80V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244AB

封装: TO-244AB

库存7,200

FST6310M

GeneSiC Semiconductor

DIODE SCHOTTKY 10V 30A D61-3M

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 10V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: D61-3M
Supplier Device Package: D61-3M

封装: D61-3M

库存2,480

MBR30035CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 150A 2 TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封装: Twin Tower

库存5,056

MBRF40035R

GeneSiC Semiconductor

DIODE MODULE 35V 400A TO244AB

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244AB

封装: TO-244AB

库存3,120

MBR40080CTR

GeneSiC Semiconductor

DIODE MODULE 80V 400A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封装: Twin Tower

库存5,648

MURT10060

GeneSiC Semiconductor

DIODE ARRAY GP 600V 100A 3TOWER

Diode Configuration: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封装: Three Tower

库存2,784

MBR20020CT

GeneSiC Semiconductor

DIODE MODULE 20V 200A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封装: Twin Tower

库存3,232

MBR400150CTR

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 200A 2 TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 150V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封装: Twin Tower

库存7,648

MBRT30030R

GeneSiC Semiconductor

DIODE MODULE 30V 300A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封装: Three Tower

库存4,864

FST10040

GeneSiC Semiconductor

DIODE MODULE 40V 100A TO249AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB

封装: TO-249AB

库存7,760

MSRT150160(A)D

GeneSiC Semiconductor

DIODE GEN 1.6KV 150A 3 TOWER

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1600V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封装: Three Tower

库存2,896

MBR2X100A120

GeneSiC Semiconductor

DIODE SCHOTTKY 120V 100A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 120V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

封装: SOT-227-4, miniBLOC

库存7,584

MUR2X030A10

GeneSiC Semiconductor

DIODE GEN PURP 1000V 60A SOT227

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 2.35V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85ns
Current - Reverse Leakage @ Vr: 25µA @ 1000V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

封装: SOT-227-4, miniBLOC

库存7,680

KBPC35005T

GeneSiC Semiconductor

DIODE BRIDGE 50V 35A KBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 4-Square, KBPC-T
Supplier Device Package: KBPC

封装: 4-Square, KBPC-T

库存2,496

KBPC1508W

GeneSiC Semiconductor

DIODE BRIDGE 15A 800V 1PH KBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Supplier Device Package: KBPC-W

封装: 4-Square, KBPC-W

库存2,272

KBJ2502G

GeneSiC Semiconductor

DIODE BRIDGE 200V 25A KBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Supplier Device Package: KBJ

封装: 4-SIP, KBJ

库存2,100

BR62

GeneSiC Semiconductor

DIODE BRIDGE 200V 6A BR-6

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, BR-6
Supplier Device Package: BR-6

封装: 4-Square, BR-6

库存17,544

MSRTA200120AD

GeneSiC Semiconductor

DIODE MODULE GP 1.2KV 3TOWER

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封装: -

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GC05MPS33J

GeneSiC Semiconductor

DIODE SIL CARB 3.3KV 5A TO263-7

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 3300 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Supplier Device Package: TO-263-7
Operating Temperature - Junction: 175°C

封装: -

库存5,040