页 10 - GeneSiC Semiconductor 产品

零件编号	制造商	描述	封装	库存
GA04JT17-247	GeneSiC Semiconductor	TRANS SJT 1700V 4A TO-247AB FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	封装: TO-247-3	库存5,216
GA01PNS80-220	GeneSiC Semiconductor	DIODE SILICON CARBIDE 8KV Diode Type: PIN - Single Voltage - Peak Reverse (Max): 8000V Current - Max: 2A Capacitance @ Vr, F: 4pF @ 1000V, 1MHz Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: Axial Supplier Device Package: -	封装: Axial	库存5,616
1N4590	GeneSiC Semiconductor	DIODE GEN PURP 400V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	封装: DO-205AA, DO-8, Stud	库存5,520
1N5833	GeneSiC Semiconductor	DIODE SCHOTTKY 30V 40A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 550mV @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 10V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AB, DO-5, Stud	库存4,064
SD4145	GeneSiC Semiconductor	DIODE SCHOTTKY 45V 30A DO4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 680mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存2,768
FR20M05	GeneSiC Semiconductor	DIODE GEN PURP 1KV 20A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	封装: DO-203AB, DO-5, Stud	库存3,328
1N3209R	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 15A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-203AB, DO-5, Stud	库存5,392
1N3890R	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存4,496
S16KR	GeneSiC Semiconductor	DIODE GEN REV 800V 16A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-203AA, DO-4, Stud	库存7,168
FR16DR02	GeneSiC Semiconductor	DIODE GEN PURP REV 200V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存3,488
MBRTA80030R	GeneSiC Semiconductor	DIODE SCHOTTKY 30V 400A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 400A Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封装: Three Tower	库存5,568
MBRTA800100R	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 400A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 400A Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封装: Three Tower	库存3,488
MBRTA60020RL	GeneSiC Semiconductor	DIODE SCHOTTKY 20V 300A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 300A Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封装: Three Tower	库存5,968
MBRF500100R	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 250A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 250A Voltage - Forward (Vf) (Max) @ If: 840mV @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	封装: TO-244AB	库存3,856
FST7335M	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 35A D61-3M Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 35A Voltage - Forward (Vf) (Max) @ If: 700mV @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 35V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: D61-3M Supplier Device Package: D61-3M	封装: D61-3M	库存5,936
MBR60035CTRL	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 300A 2 TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 300A Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 35V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封装: Twin Tower	库存7,552
MSRTA500100(A)	GeneSiC Semiconductor	DIODE MODULE 1KV 500A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 600V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封装: Three Tower	库存6,144
MURTA30020	GeneSiC Semiconductor	DIODE GEN PURP 200V 150A 3 TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 1V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封装: Three Tower	库存7,392
MURTA50060	GeneSiC Semiconductor	DIODE MODULE 600V 500A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封装: Three Tower	库存6,048
MUR20005CTR	GeneSiC Semiconductor	DIODE MODULE 50V 200A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封装: Twin Tower	库存4,608
MURF20040	GeneSiC Semiconductor	DIODE MODULE 400V 200A TO244AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	封装: TO-244AB	库存4,144
MUR40010CT	GeneSiC Semiconductor	DIODE MODULE 100V 400A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封装: Twin Tower	库存5,488
MBR40035CTR	GeneSiC Semiconductor	DIODE MODULE 35V 400A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 35V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封装: Twin Tower	库存6,720
MBR120100CTR	GeneSiC Semiconductor	DIODE MODULE 100V 120A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封装: Twin Tower	库存7,712
MUR10040CT	GeneSiC Semiconductor	DIODE MODULE 400V 100A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封装: Twin Tower	库存6,512
KBPM304G	GeneSiC Semiconductor	DIODE BRIDGE 400V 3A KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	封装: 4-SIP, KBPM	库存6,848
KBPC5001T	GeneSiC Semiconductor	DIODE BRIDGE 100V 50A KBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, KBPC-T Supplier Device Package: KBPC	封装: 4-Square, KBPC-T	库存4,928
GBU15K	GeneSiC Semiconductor	DIODE BRIDGE 800V 15A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	封装: 4-SIP, GBU	库存240,000
W01M	GeneSiC Semiconductor	DIODE BRIDGE 100V 1.5A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	封装: 4-Circular, WOM	库存145,692
MSRT15060A	GeneSiC Semiconductor	DIODE MODULE GP 600V 150A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封装: -	Request a Quote

GA04JT17-247

GeneSiC Semiconductor

TRANS SJT 1700V 4A TO-247AB

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

封装: TO-247-3

库存5,216

GA01PNS80-220

GeneSiC Semiconductor

DIODE SILICON CARBIDE 8KV

Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 8000V
Current - Max: 2A
Capacitance @ Vr, F: 4pF @ 1000V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: Axial
Supplier Device Package: -

封装: Axial

库存5,616

1N4590

GeneSiC Semiconductor

DIODE GEN PURP 400V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

封装: DO-205AA, DO-8, Stud

库存5,520

1N5833

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 40A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AB, DO-5, Stud

库存4,064

SD4145

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 30A DO4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存2,768

FR20M05

GeneSiC Semiconductor

DIODE GEN PURP 1KV 20A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-203AB, DO-5, Stud

库存3,328

1N3209R

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 15A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AB, DO-5, Stud

库存5,392

1N3890R

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 12A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存4,496

S16KR

GeneSiC Semiconductor

DIODE GEN REV 800V 16A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AA, DO-4, Stud

库存7,168

FR16DR02

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 16A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存3,488

MBRTA80030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 400A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 400A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封装: Three Tower

库存5,568

MBRTA800100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 400A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 400A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封装: Three Tower

库存3,488

MBRTA60020RL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封装: Three Tower

库存5,968

MBRF500100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 250A TO244AB

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 250A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244AB

封装: TO-244AB

库存3,856

FST7335M

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 35A D61-3M

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 35A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: D61-3M
Supplier Device Package: D61-3M

封装: D61-3M

库存5,936

MBR60035CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A 2 TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封装: Twin Tower

库存7,552

MSRTA500100(A)

GeneSiC Semiconductor

DIODE MODULE 1KV 500A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 600V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封装: Three Tower

库存6,144

MURTA30020

GeneSiC Semiconductor

DIODE GEN PURP 200V 150A 3 TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封装: Three Tower

库存7,392

MURTA50060

GeneSiC Semiconductor

DIODE MODULE 600V 500A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封装: Three Tower

库存6,048

MUR20005CTR

GeneSiC Semiconductor

DIODE MODULE 50V 200A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封装: Twin Tower

库存4,608

MURF20040

GeneSiC Semiconductor

DIODE MODULE 400V 200A TO244AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244AB

封装: TO-244AB

库存4,144

MUR40010CT

GeneSiC Semiconductor

DIODE MODULE 100V 400A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封装: Twin Tower

库存5,488

MBR40035CTR

GeneSiC Semiconductor

DIODE MODULE 35V 400A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封装: Twin Tower

库存6,720

MBR120100CTR

GeneSiC Semiconductor

DIODE MODULE 100V 120A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封装: Twin Tower

库存7,712

MUR10040CT

GeneSiC Semiconductor

DIODE MODULE 400V 100A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封装: Twin Tower

库存6,512

KBPM304G

GeneSiC Semiconductor

DIODE BRIDGE 400V 3A KBPM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

封装: 4-SIP, KBPM

库存6,848

KBPC5001T

GeneSiC Semiconductor

DIODE BRIDGE 100V 50A KBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 4-Square, KBPC-T
Supplier Device Package: KBPC

封装: 4-Square, KBPC-T

库存4,928

GBU15K

GeneSiC Semiconductor

DIODE BRIDGE 800V 15A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

封装: 4-SIP, GBU

库存240,000

W01M

GeneSiC Semiconductor

DIODE BRIDGE 100V 1.5A WOM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Supplier Device Package: WOM

封装: 4-Circular, WOM

库存145,692

MSRT15060A

GeneSiC Semiconductor

DIODE MODULE GP 600V 150A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封装: -

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