页 62 - Fairchild/ON Semiconductor 产品 - 晶体管 - FET,MOSFET - 单 | 深圳黑森尔电子
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Fairchild/ON Semiconductor 产品 - 晶体管 - FET,MOSFET - 单

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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FQD4N20LTF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存4,432
MOSFET (Metal Oxide)
200V
3.2A (Tc)
5V, 10V
2V @ 250µA
5.2nC @ 5V
310pF @ 25V
±20V
-
2.5W (Ta), 30W (Tc)
1.35 Ohm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存4,464
MOSFET (Metal Oxide)
200V
3.2A (Tc)
5V, 10V
2V @ 250µA
5.2nC @ 5V
310pF @ 25V
±20V
-
2.5W (Ta), 30W (Tc)
1.35 Ohm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQP4N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 3.6A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存31,800
MOSFET (Metal Oxide)
250V
3.6A (Tc)
10V
5V @ 250µA
5.6nC @ 10V
200pF @ 25V
±30V
-
52W (Tc)
1.75 Ohm @ 1.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP5N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存124,464
MOSFET (Metal Oxide)
200V
4.5A (Tc)
10V
5V @ 250µA
7.5nC @ 10V
270pF @ 25V
±30V
-
52W (Tc)
1.2 Ohm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FQPF4N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存3,568
MOSFET (Metal Oxide)
200V
3A (Tc)
5V, 10V
2V @ 250µA
5.2nC @ 5V
310pF @ 25V
±20V
-
27W (Tc)
1.35 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FQPF4N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 2.8A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存4,944
MOSFET (Metal Oxide)
200V
2.8A (Tc)
10V
5V @ 250µA
6.5nC @ 10V
220pF @ 25V
±30V
-
27W (Tc)
1.4 Ohm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FQU7P06TU
Fairchild/ON Semiconductor

MOSFET P-CH 60V 5.4A IPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 451 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存7,344
MOSFET (Metal Oxide)
60V
5.4A (Tc)
10V
4V @ 250µA
8.2nC @ 10V
295pF @ 25V
±25V
-
2.5W (Ta), 28W (Tc)
451 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
FQU4N25TU
Fairchild/ON Semiconductor

MOSFET N-CH 250V 3A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存2,976
MOSFET (Metal Oxide)
250V
3A (Tc)
10V
5V @ 250µA
5.6nC @ 10V
200pF @ 25V
±30V
-
2.5W (Ta), 37W (Tc)
1.75 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot FQD4N25TM
Fairchild/ON Semiconductor

MOSFET N-CH 250V 3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存545,280
MOSFET (Metal Oxide)
250V
3A (Tc)
10V
5V @ 250µA
5.6nC @ 10V
200pF @ 25V
±30V
-
2.5W (Ta), 37W (Tc)
1.75 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQP5N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存162,804
MOSFET (Metal Oxide)
200V
4.5A (Tc)
5V, 10V
2V @ 250µA
6.2nC @ 5V
325pF @ 25V
±20V
-
52W (Tc)
1.2 Ohm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP7N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7.3A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.65A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存103,464
MOSFET (Metal Oxide)
100V
7.3A (Tc)
5V, 10V
2V @ 250µA
6nC @ 5V
290pF @ 25V
±20V
-
40W (Tc)
350 mOhm @ 3.65A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP7N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7.3A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.65A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存104,064
MOSFET (Metal Oxide)
100V
7.3A (Tc)
10V
4V @ 250µA
7.5nC @ 10V
250pF @ 25V
±25V
-
40W (Tc)
350 mOhm @ 3.65A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQPF5N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存17,112
MOSFET (Metal Oxide)
200V
3.5A (Tc)
10V
5V @ 250µA
7.5nC @ 10V
270pF @ 25V
±30V
-
32W (Tc)
1.2 Ohm @ 1.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FQP3N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 2.8A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存162,864
MOSFET (Metal Oxide)
250V
2.8A (Tc)
10V
5V @ 250µA
5.2nC @ 10V
170pF @ 25V
±30V
-
45W (Tc)
2.2 Ohm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQPF7P06
Fairchild/ON Semiconductor

MOSFET P-CH 60V 5.3A TO-220F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 410 mOhm @ 2.65A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存36,000
MOSFET (Metal Oxide)
60V
5.3A (Tc)
10V
4V @ 250µA
8.2nC @ 10V
295pF @ 25V
±25V
-
24W (Tc)
410 mOhm @ 2.65A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FQPF5N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.2A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存4,624
MOSFET (Metal Oxide)
150V
4.2A (Tc)
10V
4V @ 250µA
7nC @ 10V
230pF @ 25V
±25V
-
32W (Tc)
800 mOhm @ 2.1A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FQU7N10LTU
Fairchild/ON Semiconductor

MOSFET N-CH 100V 5.8A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存4,832
MOSFET (Metal Oxide)
100V
5.8A (Tc)
5V, 10V
2V @ 250µA
6nC @ 5V
290pF @ 25V
±20V
-
2.5W (Ta), 25W (Tc)
350 mOhm @ 2.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
FQPF5N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存2,688
MOSFET (Metal Oxide)
200V
3.5A (Tc)
5V, 10V
2V @ 250µA
6.2nC @ 5V
325pF @ 25V
±20V
-
32W (Tc)
1.2 Ohm @ 1.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FQPF7N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 5.5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 23W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存7,424
MOSFET (Metal Oxide)
100V
5.5A (Tc)
5V, 10V
2V @ 250µA
6nC @ 5V
290pF @ 25V
±20V
-
23W (Tc)
350 mOhm @ 2.75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
SSN1N45BBU
Fairchild/ON Semiconductor

MOSFET N-CH 450V 500MA TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±50V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
封装: TO-226-3, TO-92-3 (TO-226AA)
库存4,272
MOSFET (Metal Oxide)
450V
500mA (Tc)
10V
3.7V @ 250µA
8.5nC @ 10V
240pF @ 25V
±50V
-
900mW (Ta)
4.25 Ohm @ 250mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot SSM1N45BTF
Fairchild/ON Semiconductor

MOSFET N-CH 450V 500MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±50V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存7,456
MOSFET (Metal Oxide)
450V
500mA (Tc)
10V
3.7V @ 250µA
8.5nC @ 10V
240pF @ 25V
±50V
-
900mW (Ta)
4.25 Ohm @ 250mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
FQU4N20TU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存3,840
MOSFET (Metal Oxide)
200V
3A (Tc)
5V, 10V
5V @ 250µA
6.5nC @ 10V
220pF @ 25V
±20V
-
2.5W (Ta), 30W (Tc)
1.4 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
FQE10N20CTU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4A TO-126

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 12.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-126
  • Package / Case: TO-225AA, TO-126-3
封装: TO-225AA, TO-126-3
库存2,208
MOSFET (Metal Oxide)
200V
4A (Tc)
10V
4V @ 250µA
26nC @ 10V
510pF @ 25V
±30V
-
12.8W (Tc)
360 mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-126
TO-225AA, TO-126-3
FQE10N20LCTU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4A TO-126

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 12.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-126
  • Package / Case: TO-225AA, TO-126-3
封装: TO-225AA, TO-126-3
库存6,112
MOSFET (Metal Oxide)
200V
4A (Tc)
5V, 10V
2V @ 250µA
19nC @ 5V
490pF @ 25V
±20V
-
12.8W (Tc)
360 mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-126
TO-225AA, TO-126-3
hot IRLM110ATF
Fairchild/ON Semiconductor

MOSFET N-CH 100V 1.5A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 440 mOhm @ 750mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存5,664
MOSFET (Metal Oxide)
100V
1.5A (Tc)
5V
2V @ 250µA
8nC @ 5V
235pF @ 25V
±20V
-
2.2W (Tc)
440 mOhm @ 750mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
hot IRLM210ATF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 770MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 390mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存6,312
MOSFET (Metal Oxide)
200V
770mA (Ta)
5V
2V @ 250µA
9nC @ 5V
240pF @ 25V
±20V
-
1.8W (Tc)
1.5 Ohm @ 390mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
hot NDC631N
Fairchild/ON Semiconductor

MOSFET N-CH 20V 4.1A SSOT-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
  • Vgs (Max): 8V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT?-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: SOT-23-6 Thin, TSOT-23-6
库存2,107,392
MOSFET (Metal Oxide)
20V
4.1A (Ta)
2.7V, 4.5V
1V @ 250µA
14nC @ 4.5V
365pF @ 10V
8V
-
1.6W (Ta)
60 mOhm @ 4.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT?-6
SOT-23-6 Thin, TSOT-23-6
hot FQT4N20TF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 0.85A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 425mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存122,400
MOSFET (Metal Oxide)
200V
850mA (Tc)
10V
5V @ 250µA
6.5nC @ 10V
220pF @ 25V
±30V
-
2.2W (Tc)
1.4 Ohm @ 425mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
FQNL2N50BBU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 0.35A TO-92L

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 175mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92L
  • Package / Case: TO-226-3, TO-92-3 Long Body
封装: TO-226-3, TO-92-3 Long Body
库存7,936
MOSFET (Metal Oxide)
500V
350mA (Tc)
10V
3.7V @ 250µA
8nC @ 10V
230pF @ 25V
±30V
-
1.5W (Tc)
5.3 Ohm @ 175mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92L
TO-226-3, TO-92-3 Long Body
FQNL1N50BTA
Fairchild/ON Semiconductor

MOSFET N-CH 500V 0.27A TO-92L

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 Ohm @ 135mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92L
  • Package / Case: TO-226-3, TO-92-3 Long Body
封装: TO-226-3, TO-92-3 Long Body
库存4,160
MOSFET (Metal Oxide)
500V
270mA (Tc)
10V
3.7V @ 250µA
5.5nC @ 10V
150pF @ 25V
±30V
-
1.5W (Tc)
9 Ohm @ 135mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92L
TO-226-3, TO-92-3 Long Body