页 101 - Fairchild/ON Semiconductor 产品 - 晶体管 - FET,MOSFET - 单 | 深圳黑森尔电子
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Fairchild/ON Semiconductor 产品 - 晶体管 - FET,MOSFET - 单

记录 3,066
页  101/103
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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FQPF19N20CYDTU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 19A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3 (Y-Forming)
  • Package / Case: TO-220-3 Full Pack, Formed Leads
封装: TO-220-3 Full Pack, Formed Leads
库存2,816
MOSFET (Metal Oxide)
200V
19A (Tc)
10V
4V @ 250µA
53nC @ 10V
1080pF @ 25V
±30V
-
43W (Tc)
170 mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3 (Y-Forming)
TO-220-3 Full Pack, Formed Leads
FQA28N50_F109
Fairchild/ON Semiconductor

MOSFET N-CH 500V 28.4A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 28.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 14.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
封装: TO-3P-3, SC-65-3
库存4,208
MOSFET (Metal Oxide)
500V
28.4A (Tc)
10V
5V @ 250µA
140nC @ 10V
5600pF @ 25V
±30V
-
310W (Tc)
160 mOhm @ 14.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
FQA24N50_F109
Fairchild/ON Semiconductor

MOSFET N-CH 500V 24A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
封装: TO-3P-3, SC-65-3
库存6,848
MOSFET (Metal Oxide)
500V
24A (Tc)
10V
5V @ 250µA
120nC @ 10V
4500pF @ 25V
±30V
-
290W (Tc)
200 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
FQA24N50F_F109
Fairchild/ON Semiconductor

MOSFET N-CH 500V 24A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
封装: TO-3P-3, SC-65-3
库存7,856
MOSFET (Metal Oxide)
500V
24A (Tc)
10V
5V @ 250µA
120nC @ 10V
4500pF @ 25V
±30V
-
290W (Tc)
200 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
FDPF5N50TYDTU
Fairchild/ON Semiconductor

MOSFET N-CH 500V TO-220FP-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F (LG-Formed)
  • Package / Case: TO-220-3 Full Pack, Formed Leads
封装: TO-220-3 Full Pack, Formed Leads
库存4,800
MOSFET (Metal Oxide)
500V
5A (Tc)
10V
5V @ 250µA
15nC @ 10V
640pF @ 25V
±30V
-
28W (Tc)
1.4 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F (LG-Formed)
TO-220-3 Full Pack, Formed Leads
FDFMJ2P023Z
Fairchild/ON Semiconductor

MOSFET P-CH 20V 2.9A 6MLP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 112 mOhm @ 2.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75, MicroFET
  • Package / Case: 6-WFDFN Exposed Pad
封装: 6-WFDFN Exposed Pad
库存3,552
MOSFET (Metal Oxide)
20V
2.9A (Ta)
1.5V, 4.5V
1V @ 250µA
6.5nC @ 4.5V
400pF @ 10V
±8V
Schottky Diode (Isolated)
1.4W (Ta)
112 mOhm @ 2.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, MicroFET
6-WFDFN Exposed Pad
FDD4685TF_SB82135
Fairchild/ON Semiconductor

MOSFET P-CH 40V DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 20V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存4,896
MOSFET (Metal Oxide)
40V
8.4A (Ta), 32A (Tc)
-
3V @ 250µA
27nC @ 5V
2380pF @ 20V
-
-
-
27 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS2510SDC
Fairchild/ON Semiconductor

MOSFET N-CH 25V 28A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool?56
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存4,176
MOSFET (Metal Oxide)
25V
28A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
45nC @ 10V
2780pF @ 13V
±20V
-
3.3W (Ta), 60W (Tc)
2.9 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool?56
8-PowerTDFN
hot FDMS2508SDC
Fairchild/ON Semiconductor

MOSFET N-CH 25V 34A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4515pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool?56
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存3,744
MOSFET (Metal Oxide)
25V
34A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
69nC @ 10V
4515pF @ 13V
±20V
-
3.3W (Ta), 78W (Tc)
1.95 mOhm @ 28A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool?56
8-PowerTDFN
FDMS2506SDC
Fairchild/ON Semiconductor

MOSFET N-CH 25V 39A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5945pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool?56
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存3,024
MOSFET (Metal Oxide)
25V
39A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
93nC @ 10V
5945pF @ 13V
±20V
-
3.3W (Ta), 89W (Tc)
1.45 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool?56
8-PowerTDFN
FDMS2504SDC
Fairchild/ON Semiconductor

MOSFET N-CH 25V 42A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool?56
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存5,008
MOSFET (Metal Oxide)
25V
42A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
119nC @ 10V
7770pF @ 13V
±20V
-
3.3W (Ta), 104W (Tc)
1.25 mOhm @ 32A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool?56
8-PowerTDFN
FDFMA2P859T
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3A MICROFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MicroFET 2x2 Thin
  • Package / Case: 6-UDFN Exposed Pad
封装: 6-UDFN Exposed Pad
库存2,368
MOSFET (Metal Oxide)
20V
3A (Ta)
1.8V, 4.5V
1.3V @ 250µA
6nC @ 4.5V
435pF @ 10V
±8V
Schottky Diode (Isolated)
1.4W (Ta)
120 mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
MicroFET 2x2 Thin
6-UDFN Exposed Pad
hot FDB039N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8235pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存42,180
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4.5V @ 250µA
133nC @ 10V
8235pF @ 25V
±20V
-
231W (Tc)
3.9 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDP040N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 120A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8235pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存95,988
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4.5V @ 250µA
133nC @ 10V
8235pF @ 25V
±20V
-
231W (Tc)
4 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FDI040N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8235pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK (TO-262)
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存4,656
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4.5V @ 250µA
133nC @ 10V
8235pF @ 25V
±20V
-
231W (Tc)
4 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK (TO-262)
TO-262-3 Long Leads, I2Pak, TO-262AA
TLC530TU
Fairchild/ON Semiconductor

MOSFET N-CH 330V 7A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 330V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存7,264
MOSFET (Metal Oxide)
330V
7A (Ta)
-
-
-
-
-
-
-
-
-
Through Hole
TO-220-3
TO-220-3
TLC530FTU
Fairchild/ON Semiconductor

MOSFET N-CH 330V 7A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 330V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存7,168
MOSFET (Metal Oxide)
330V
7A (Ta)
-
-
-
-
-
-
-
-
-
Through Hole
TO-220-3
TO-220-3
SSR1N60BTM_F080
Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.9A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,072
MOSFET (Metal Oxide)
600V
900mA (Tc)
10V
4V @ 250µA
7.7nC @ 10V
215pF @ 25V
±30V
-
2.5W (Ta), 28W (Tc)
12 Ohm @ 450mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SSR1N60BTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.9A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存63,648
MOSFET (Metal Oxide)
600V
900mA (Tc)
10V
4V @ 250µA
7.7nC @ 10V
215pF @ 25V
±30V
-
2.5W (Ta), 28W (Tc)
12 Ohm @ 450mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
SSP45N20B_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 200V 35A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: TO-220-3
库存3,664
MOSFET (Metal Oxide)
200V
35A (Tc)
10V
4V @ 250µA
173nC @ 10V
4300pF @ 25V
±30V
-
176W (Tc)
65 mOhm @ 17.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
hot SSH70N10A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 70A TO-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
封装: TO-3P-3, SC-65-3
库存819,420
MOSFET (Metal Oxide)
100V
70A (Tc)
10V
4V @ 250µA
195nC @ 10V
4870pF @ 25V
-
-
300W (Tc)
23 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
hot SI4420DY
Fairchild/ON Semiconductor

MOSFET N-CH 30V 12.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存145,284
MOSFET (Metal Oxide)
30V
12.5A (Ta)
4.5V, 10V
1V @ 250µA
53nC @ 5V
2180pF @ 15V
±20V
-
2.5W (Ta)
9 mOhm @ 12.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SFW9Z34TM
Fairchild/ON Semiconductor

MOSFET P-CH 60V 18A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 82W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存841,284
MOSFET (Metal Oxide)
60V
18A (Tc)
10V
4V @ 250µA
38nC @ 10V
1155pF @ 25V
±30V
-
3.8W (Ta), 82W (Tc)
140 mOhm @ 9A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFW9640TM
Fairchild/ON Semiconductor

MOSFET P-CH 200V 11A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 123W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,144
MOSFET (Metal Oxide)
200V
11A (Tc)
10V
4V @ 250µA
59nC @ 10V
1585pF @ 25V
±30V
-
3.1W (Ta), 123W (Tc)
500 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFW9530TM
Fairchild/ON Semiconductor

MOSFET P-CH 100V 10.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,120
MOSFET (Metal Oxide)
100V
10.5A (Tc)
10V
4V @ 250µA
38nC @ 10V
1035pF @ 25V
±30V
-
3.8W (Ta), 66W (Tc)
300 mOhm @ 5.3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFU9220TU_F080
Fairchild/ON Semiconductor

MOSFET P-CH 200V 3.1A IPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存5,152
MOSFET (Metal Oxide)
200V
3.1A (Tc)
10V
4V @ 250µA
19nC @ 10V
540pF @ 25V
±30V
-
2.5W (Ta), 30W (Tc)
1.5 Ohm @ 1.6A, 10V
-
Through Hole
TO-251-3
TO-251-3 Short Leads, IPak, TO-251AA
SFU9220TU_AM002
Fairchild/ON Semiconductor

MOSFET P-CH 200V 3.1A IPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存2,320
MOSFET (Metal Oxide)
200V
3.1A (Tc)
10V
4V @ 250µA
19nC @ 10V
540pF @ 25V
±30V
-
2.5W (Ta), 30W (Tc)
1.5 Ohm @ 1.6A, 10V
-
Through Hole
TO-251-3
TO-251-3 Short Leads, IPak, TO-251AA
hot SFR9110TF
Fairchild/ON Semiconductor

MOSFET P-CH 100V 2.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存143,340
MOSFET (Metal Oxide)
100V
2.8A (Tc)
10V
4V @ 250µA
10nC @ 10V
335pF @ 25V
±30V
-
2.5W (Ta), 20W (Tc)
1.2 Ohm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SFR9034TF
Fairchild/ON Semiconductor

MOSFET P-CH 60V 14A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存127,452
MOSFET (Metal Oxide)
60V
14A (Tc)
10V
4V @ 250µA
38nC @ 10V
1155pF @ 25V
±25V
-
2.5W (Ta), 49W (Tc)
140 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SFR9024TM
Fairchild/ON Semiconductor

MOSFET P-CH 60V 7.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存213,888
MOSFET (Metal Oxide)
60V
7.8A (Tc)
10V
4V @ 250µA
19nC @ 10V
600pF @ 25V
±30V
-
2.5W (Ta), 32W (Tc)
280 mOhm @ 3.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63