晶体管 - UGBT，MOSFET - 单

IRG7PH28UD1PBF

Infineon Technologies

IGBT 1200V 30A 115W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
• Power - Max: 115W
• Switching Energy: 543µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: -/229ns
• Test Condition: 600V, 15A, 22 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

IRG7PH42UD1PBF

Infineon Technologies

IGBT 1200V 85A 313W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 313W
• Switching Energy: 1.21mJ (off)
• Input Type: Standard
• Gate Charge: 180nC
• Td (on/off) @ 25°C: -/270ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

RJH1CF7RDPQ-80#T2

Renesas Electronics America

IGBT 1200V 60A 250W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
• Power - Max: 250W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: TO-247-3

IXGH15N120B2D1

IXYS

IGBT 1200V 30A 192W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 15A
• Power - Max: 192W
• Switching Energy: 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 86nC
• Td (on/off) @ 25°C: 25ns/165ns
• Test Condition: 960V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 165ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

STGW35NC60WD

STMicroelectronics

IGBT 600V 70A 260W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
• Power - Max: 260W
• Switching Energy: 305µJ (on), 181µJ (off)
• Input Type: Standard
• Gate Charge: 102nC
• Td (on/off) @ 25°C: 29.5ns/118ns
• Test Condition: 390V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 40ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: TO-247-3

IXSK40N60CD1

IXYS

IGBT 600V 75A 280W TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
• Power - Max: 280W
• Switching Energy: 1mJ (off)
• Input Type: Standard
• Gate Charge: 190nC
• Td (on/off) @ 25°C: 50ns/70ns
• Test Condition: 480V, 40A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264AA(IXSK)

封装: TO-264-3, TO-264AA

APT11GF120KRG

Microsemi Corporation

IGBT 1200V 25A 156W TO220

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 25A
• Current - Collector Pulsed (Icm): 44A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
• Power - Max: 156W
• Switching Energy: 300µJ (on), 285µJ (off)
• Input Type: Standard
• Gate Charge: 65nC
• Td (on/off) @ 25°C: 7ns/100ns
• Test Condition: 800V, 8A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220 [K]

封装: TO-220-3

NGB8206NTF4

ON Semiconductor

IGBT 390V 20A 150W D2PAK3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 390V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -/5µs
• Test Condition: 300V, 9A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FGP20N6S2D

Fairchild/ON Semiconductor

IGBT 600V 28A 125W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 28A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
• Power - Max: 125W
• Switching Energy: 25µJ (on), 58µJ (off)
• Input Type: Standard
• Gate Charge: 30nC
• Td (on/off) @ 25°C: 7.7ns/87ns
• Test Condition: 390V, 7A, 25 Ohm, 15V
• Reverse Recovery Time (trr): 31ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IKZ50N65ES5XKSA1

Infineon Technologies

IGBT PRODUCTS

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IRGSL4B60KD1PBF

Infineon Technologies

IGBT 600V 11A 63W TO262

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11A
• Current - Collector Pulsed (Icm): 22A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
• Power - Max: 63W
• Switching Energy: 73µJ (on), 47µJ (off)
• Input Type: Standard
• Gate Charge: 12nC
• Td (on/off) @ 25°C: 22ns/100ns
• Test Condition: 400V, 4A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 93ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IRGR3B60KD2PBF

Infineon Technologies

IGBT 600V 7.8A 52W DPAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 7.8A
• Current - Collector Pulsed (Icm): 15.6A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
• Power - Max: 52W
• Switching Energy: 62µJ (on), 39µJ (off)
• Input Type: Standard
• Gate Charge: 13nC
• Td (on/off) @ 25°C: 18ns/110ns
• Test Condition: 400V, 3A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 77ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IXGH24N170

IXYS

IGBT 1700V 50A 250W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 24A
• Power - Max: 250W
• Switching Energy: 8mJ (off)
• Input Type: Standard
• Gate Charge: 106nC
• Td (on/off) @ 25°C: 42ns/200ns
• Test Condition: 1360V, 50A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

FGY40T120SMD

Fairchild/ON Semiconductor

IGBT 1200V 80A TO-247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
• Power - Max: 882W
• Switching Energy: 2.7mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 370nC
• Td (on/off) @ 25°C: 40ns/475ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 65ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: TO-247-3

IXGT45N120

IXYS

IGBT 1200V 75A 300W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
• Power - Max: 300W
• Switching Energy: 14mJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 55ns/370ns
• Test Condition: 960V, 45A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

ISL9V3040S3ST

Fairchild/ON Semiconductor

IGBT 430V 21A 150W TO263AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 21A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 17nC
• Td (on/off) @ 25°C: -/4.8µs
• Test Condition: 300V, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RJP4009ANS-01#Q6

Renesas Electronics America

IGBT 400V

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 9V @ 2.5V, 150A
• Power - Max: 1.8W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN
• Supplier Device Package: -

封装: 8-VDFN

STGB3NC120HDT4

STMicroelectronics

IGBT 1200V 14A 75W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 20A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
• Power - Max: 75W
• Switching Energy: 236µJ (on), 290µJ (off)
• Input Type: Standard
• Gate Charge: 24nC
• Td (on/off) @ 25°C: 15ns/118ns
• Test Condition: 800V, 3A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 51ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGWT60H65FB

STMicroelectronics

IGBT 650V 80A 375W TO3P-3L

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 240A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
• Power - Max: 375W
• Switching Energy: 1.09mJ (on), 626µJ (off)
• Input Type: Standard
• Gate Charge: 306nC
• Td (on/off) @ 25°C: 51ns/160ns
• Test Condition: 400V, 60A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

封装: TO-3P-3, SC-65-3

IGZ100N65H5XKSA1

Infineon Technologies

IGBT 650V 100A SGL TO-247-4

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 161A
• Current - Collector Pulsed (Icm): 400A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
• Power - Max: 536W
• Switching Energy: 850µJ (on), 770µJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 30ns/421ns
• Test Condition: 400V, 50A, 8 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-4
• Supplier Device Package: PG-TO247-4

封装: TO-247-4

APT80GA90B

Microsemi Corporation

IGBT 900V 145A 625W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 145A
• Current - Collector Pulsed (Icm): 239A
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
• Power - Max: 625W
• Switching Energy: 1652µJ (on), 1389µJ (off)
• Input Type: Standard
• Gate Charge: 200nC
• Td (on/off) @ 25°C: 18ns/149ns
• Test Condition: 600V, 47A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

封装: TO-247-3

AOK40B65HQ2

Alpha & Omega Semiconductor Inc.

IGBT 40A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
• Power - Max: 312 W
• Switching Energy: 1.19mJ (on), 380µJ (off)
• Input Type: Standard
• Gate Charge: 61 nC
• Td (on/off) @ 25°C: 31ns/110ns
• Test Condition: 400V, 40A, 7.5Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封装: -

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RGS60NL65DHRBTL

Rohm Semiconductor

IGBT TRENCH FS 650V 59A TO263L

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 59 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 228 W
• Switching Energy: 650µJ (on), 790µJ (off)
• Input Type: Standard
• Gate Charge: 36 nC
• Td (on/off) @ 25°C: 31ns/94ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): 95 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263L

封装: -

GT30J121-Q

Toshiba Semiconductor and Storage

IGBT 600V 30A 170W TO3PN

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
• Power - Max: 170 W
• Switching Energy: 1mJ (on), 800µJ (off)
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 90ns/300ns
• Test Condition: 300V, 30A, 24Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P(N)

封装: -

APT20GF120BRDG

Microchip Technology

IGBT NPT COMBI 1200V 20A TO-247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 32 A
• Current - Collector Pulsed (Icm): 64 A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
• Power - Max: 200 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 140 nC
• Td (on/off) @ 25°C: 17ns/93ns
• Test Condition: 792V, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr): 85 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: -

FGD3040G2-SN00353V

onsemi

FGD3040G2-SN00353V

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)

封装: -

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IGP20N65H5XKSA1

Infineon Technologies

IGBT 650V 42A TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 42 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 125 W
• Switching Energy: 170µJ (on), 60µJ (off)
• Input Type: Standard
• Gate Charge: 48 nC
• Td (on/off) @ 25°C: 18ns/156ns
• Test Condition: 400V, 10A, 32Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1

封装: -

IXGA20N250HV-TRL

IXYS

DISC IGBT NPT VERY HI VOLTAGE TO

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 105 A
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
• Power - Max: 150 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 53 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV

封装: -

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FGHL40S65UQ

onsemi

IGBT 650V 40A

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
• Power - Max: 231 W
• Switching Energy: 1.76mJ (on), 362µJ (off)
• Input Type: Standard
• Gate Charge: 306 nC
• Td (on/off) @ 25°C: 32ns/260ns
• Test Condition: 400V, 40A, 6Ohm, 15V
• Reverse Recovery Time (trr): 319 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: -

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RGS80TS65HRC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 73A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 73 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 272 W
• Switching Energy: 1.05mJ (on), 1.03mJ (off)
• Input Type: Standard
• Gate Charge: 48 nC
• Td (on/off) @ 25°C: 37ns/112ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封装: -