图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 25A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存103,464 |
|
MOSFET (Metal Oxide) | 55V | 25A (Tc) | 5V, 10V | 2.2V @ 20µA | 47nC @ 10V | 2260pF @ 25V | ±16V | - | 50W (Tc) | 21.3 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 30V 8A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存38,100 |
|
MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 1V @ 250µA | 60nC @ 10V | 2320pF @ 15V | ±20V | - | 2.5W (Ta) | 20 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 20V 670MA SOT323-3
|
封装: SC-70, SOT-323 |
库存980,652 |
|
MOSFET (Metal Oxide) | 20V | 670mA (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 2.2nC @ 4.5V | - | ±12V | - | 290mW (Ta) | 430 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
||
Diodes Incorporated |
MOSFET N-CH 30V 11.6A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存775,872 |
|
MOSFET (Metal Oxide) | 30V | 11.6A (Ta) | 4.5V, 10V | 2V @ 250µA | 27.6nC @ 10V | 1289pF @ 15V | ±20V | - | 1.43W (Ta) | 10 mOhm @ 11.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存897,024 |
|
MOSFET (Metal Oxide) | 60V | 15A (Tc) | 5V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | ±10V | - | 48.4W (Tc) | 100 mOhm @ 7.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 400V 10A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,640 |
|
MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1030pF @ 25V | ±30V | - | 3.1W (Ta), 125W (Tc) | 550 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 60V 28A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存846,132 |
|
MOSFET (Metal Oxide) | 60V | 28A (Tc) | 10V | 4V @ 250µA | 58nC @ 10V | 1750pF @ 25V | ±20V | - | 70W (Tc) | 28 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 30V 17A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存409,524 |
|
MOSFET (Metal Oxide) | 30V | 17A (Tc) | 4.5V, 10V | 1V @ 250µA | 35nC @ 4.5V | 2160pF @ 25V | ±18V | - | 3.2W (Tc) | 5.5 mOhm @ 8.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 650V 13.4A TO-247
|
封装: TO-247-3 |
库存2,944 |
|
MOSFET (Metal Oxide) | 650V | 13.4A (Tc) | 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | ±20V | - | 156W (Tc) | 330 mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 800V 34A SOT-227B
|
封装: SOT-227-4, miniBLOC |
库存4,528 |
|
MOSFET (Metal Oxide) | 800V | 34A | 10V | 5V @ 8mA | 270nC @ 10V | 7500pF @ 25V | ±20V | - | 600W (Tc) | 240 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Diodes Incorporated |
MOSFET BVDSS: 61V 100V TO220AB
|
封装: TO-220-3 |
库存5,728 |
|
MOSFET (Metal Oxide) | 100V | 140A (Tc) | 10V | 3.5V @ 250µA | 114nC @ 10V | 3688pF @ 50V | ±20V | - | 187W (Tc) | 5 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
SUPERFET3 650V 190 MOHM, TO220F
|
封装: - |
库存7,968 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
SUPERFET3 650V 190 MOHM, TO220F
|
封装: - |
库存5,648 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 21A 8DFN
|
封装: 8-PowerSMD, Flat Leads |
库存5,168 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Ta), 21A (Tc) | 8V, 10V | 4.1V @ 250µA | 20nC @ 10V | 1090pF @ 50V | ±25V | - | 3.1W (Ta), 43W (Tc) | 48 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
||
ON Semiconductor |
MOSFET N-CH 50V 0.1A
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存2,945,832 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 10V | - | - | 15pF @ 10V | ±12V | - | 200mW (Ta) | 20 Ohm @ 10mA, 10V | 125°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 40V 40A TSDSON-8
|
封装: 8-PowerVDFN |
库存5,632 |
|
MOSFET (Metal Oxide) | 40V | 40A (Tc) | 10V | 4V @ 36µA | 46nC @ 10V | 3700pF @ 20V | ±20V | - | 2.1W (Ta), 69W (Tc) | 4.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 6.5A 6-MLP 2X2
|
封装: 6-VDFN Exposed Pad |
库存2,160 |
|
MOSFET (Metal Oxide) | 30V | 6.5A (Ta), 8A (Tc) | 4.5V, 10V | 3V @ 250µA | 7.5nC @ 10V | 450pF @ 15V | ±20V | - | 1.9W (Ta) | 23 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
||
Infineon Technologies |
MOSFET N-CH 250V 25A TO220-3
|
封装: TO-220-3 |
库存390,000 |
|
MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | ±20V | - | 136W (Tc) | 60 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 12V 60A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存22,350 |
|
MOSFET (Metal Oxide) | 12V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 150nC @ 10V | 6900pF @ 6V | ±20V | - | 6.25W (Ta), 104W (Tc) | 1.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
STMicroelectronics |
MOSFET N-CH 100V 40A TO-220
|
封装: TO-220-3 |
库存710,016 |
|
MOSFET (Metal Oxide) | 100V | 40A (Tc) | 5V, 10V | 2.5V @ 250µA | 64nC @ 5V | 2300pF @ 25V | ±17V | - | 150W (Tc) | 33 mOhm @ 20A, 10V | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 4A TO-220
|
封装: TO-220-3 |
库存713,412 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | ±30V | - | 70W (Tc) | 2 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
MOSLEADER |
Single N 30V 3.5A SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 80V 300A HDSOP-16-2
|
封装: - |
库存6,846 |
|
MOSFET (Metal Oxide) | 80 V | 300A (Tj) | 6V, 10V | 3.8V @ 230µA | 187 nC @ 10 V | 13178 pF @ 40 V | ±20V | - | 300W (Tc) | 1.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
||
onsemi |
MOSFET N-CH 60V 7.82A/20A 8WDFN
|
封装: - |
库存4,500 |
|
MOSFET (Metal Oxide) | 60 V | 7.82A (Ta), 20A (Tc) | 4.5V, 10V | 2.2V @ 13µA | 6 nC @ 10 V | 327 pF @ 25 V | ±20V | - | 3W (Ta), 20W (Tc) | 26.5mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET 650V NCH SIC TRENCH
|
封装: - |
库存1,380 |
|
SiCFET (Silicon Carbide) | 650 V | 59A (Tc) | 18V | 5.7V @ 11mA | 63 nC @ 18 V | 2131 pF @ 400 V | +23V, -5V | - | 189W (Tc) | 34mOhm @ 38.3A, 18V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4-3 | TO-247-4 |
||
Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存8,850 |
|
MOSFET (Metal Oxide) | 30 V | 8A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 4.3 nC @ 4.5 V | 392 pF @ 25 V | ±20V | - | 2W (Ta) | 23mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
||
onsemi |
POWER MOSFET, N-CHANNEL, SUPERFE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 16A (Tj) | 10V | 4V @ 1.4mA | 31 nC @ 10 V | 1600 pF @ 400 V | ±30V | - | 32W (Tc) | 190mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 600V 11A TO247-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 3.5V @ 440µA | 29 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 96W (Tc) | 299mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
||
Renesas Electronics Corporation |
MOSFET N-CH
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |