页 783 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 单

记录 42,029
页  783/1,401
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封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot SPB80N03S2L-04
Infineon Technologies

MOSFET N-CH 30V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存60,000
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2V @ 130µA
105nC @ 10V
3900pF @ 25V
±20V
-
188W (Tc)
3.9 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP054NE8NGHKSA2
Infineon Technologies

MOSFET N-CH 85V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存5,440
MOSFET (Metal Oxide)
85V
100A (Tc)
10V
4V @ 250µA
180nC @ 10V
12100pF @ 40V
±20V
-
300W (Tc)
5.4 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
hot IRLU3715ZPBF
Infineon Technologies

MOSFET N-CH 20V 49A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存10,308
MOSFET (Metal Oxide)
20V
49A (Tc)
4.5V, 10V
2.55V @ 250µA
11nC @ 4.5V
810pF @ 10V
±20V
-
40W (Tc)
11 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
AO3419_101
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存3,328
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2N6661JTX02
Vishay Siliconix

MOSFET N-CH 90V 0.86A TO-205

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
封装: TO-205AD, TO-39-3 Metal Can
库存5,024
MOSFET (Metal Oxide)
90V
860mA (Tc)
5V, 10V
2V @ 1mA
-
50pF @ 25V
±20V
-
725mW (Ta), 6.25W (Tc)
4 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AD, TO-39-3 Metal Can
2N7225U
Microsemi Corporation

MOSFET N-CH 200V SMD1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-267AB
  • Package / Case: TO-267AB
封装: TO-267AB
库存7,152
MOSFET (Metal Oxide)
200V
27.4A (Tc)
10V
4V @ 250µA
115nC @ 10V
-
±20V
-
4W (Ta), 150W (Tc)
100 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-267AB
TO-267AB
NTBV25P06T4G
ON Semiconductor

MOSFET P-CH 60V 27.5A D2PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-3
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,672
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
D2PAK-3
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76445S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4965pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,408
MOSFET (Metal Oxide)
60V
75A (Tc)
4.5V, 10V
3V @ 250µA
150nC @ 10V
4965pF @ 25V
±16V
-
310W (Tc)
6.5 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75829D3S
Fairchild/ON Semiconductor

MOSFET N-CH 150V 18A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存4,992
MOSFET (Metal Oxide)
150V
18A (Tc)
10V
4V @ 250µA
70nC @ 20V
1080pF @ 25V
±20V
-
110W (Tc)
110 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot AOD480
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 25A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 21W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存714,324
MOSFET (Metal Oxide)
30V
25A (Tc)
4.5V, 10V
2.5V @ 250µA
14nC @ 10V
820pF @ 15V
±20V
-
2.5W (Ta), 21W (Tc)
23 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot EFC4612R-S-TR
ON Semiconductor

MOSFET N-CH 24V 6A EFCP

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EFCP1313-4CC-037
  • Package / Case: 4-XFBGA
封装: 4-XFBGA
库存29,220
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-
-
-
-
-
-
-
-
-
-
150°C (TJ)
Surface Mount
EFCP1313-4CC-037
4-XFBGA
STI6N80K5
STMicroelectronics

MOSFET N-CH 800V 4.5A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 100V
  • Vgs (Max): 30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存6,320
MOSFET (Metal Oxide)
800V
4.5A (Tc)
10V
5V @ 100µA
7.5nC @ 10V
255pF @ 100V
30V
-
85W (Tc)
1.6 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
IPA80R1K0CEXKSA2
Infineon Technologies

MOSFET N-CH 800V TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.6A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存6,360
MOSFET (Metal Oxide)
800V
5.7A (Tc)
10V
3.9V @ 250µA
31nC @ 10V
785pF @ 100V
±20V
-
32W (Tc)
950 mOhm @ 3.6A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
hot CSD17301Q5A
Texas Instruments

MOSFET N-CH 30V 28A 8SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Vgs(th) (Max) @ Id: 1.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 15V
  • Vgs (Max): +10V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON (5x6)
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存8,772
MOSFET (Metal Oxide)
30V
28A (Ta), 100A (Tc)
3V, 8V
1.55V @ 250µA
25nC @ 4.5V
3480pF @ 15V
+10V, -8V
-
3.2W (Ta)
2.6 mOhm @ 25A, 8V
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON (5x6)
8-PowerTDFN
hot STF13N80K5
STMicroelectronics

MOSFET N-CH 800V 12A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存25,320
MOSFET (Metal Oxide)
800V
12A (Tc)
10V
5V @ 100µA
29nC @ 10V
870pF @ 100V
±30V
-
35W (Tc)
450 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
IPW60R190C6FKSA1
Infineon Technologies

MOSFET N-CH 600V 20.2A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3
封装: -
库存846
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
3.5V @ 630µA
63 nC @ 10 V
1400 pF @ 100 V
±20V
-
151W (Tc)
190mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
SM2309PSAC-TRG-ML
MOSLEADER

P -30V -3.1A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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SQ3456CEV-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 30 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
库存8,475
MOSFET (Metal Oxide)
30 V
7.8A (Tc)
4.5V, 10V
2.5V @ 250µA
10 nC @ 10 V
460 pF @ 15 V
±20V
-
4W (Tc)
35mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
MGSF3455XT1
onsemi

P-CHANNEL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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STF26N60DM6
STMicroelectronics

MOSFET N-CH 600V 18A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: -
库存2,997
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
4.75V @ 250µA
24 nC @ 10 V
940 pF @ 100 V
±25V
-
30W (Tc)
195mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
IPP60R040S7XKSA1
Infineon Technologies

HIGH POWER_NEW PG-TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封装: -
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MOSFET (Metal Oxide)
600 V
13A (Tc)
12V
4.5V @ 790µA
83 nC @ 12 V
3127 pF @ 300 V
±20V
-
245W (Tc)
40mOhm @ 13A, 12V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
DI032N03PTK
Diotec Semiconductor

IC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-QFN (3x3)
  • Package / Case: 8-PowerVDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
32A (Tc)
4.5V, 10V
2.5V @ 250µA
38 nC @ 10 V
2300 pF @ 15 V
±20V
-
28W (Tc)
5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-QFN (3x3)
8-PowerVDFN
NVTFS8D1N08HTAG
onsemi

MOSFET N-CHANNEL 80V 61A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封装: -
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MOSFET (Metal Oxide)
80 V
14A (Ta), 61A (Tc)
6V, 10V
4V @ 270µA
23 nC @ 10 V
1450 pF @ 40 V
±20V
-
3.8W (Ta), 75W (Tc)
8.3mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
MCQ05N15-TP
Micro Commercial Co

MOSFET N-CH 150V 5A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 75 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2W
  • Rds On (Max) @ Id, Vgs: 63mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
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MOSFET (Metal Oxide)
150 V
5A (Tj)
-
4V @ 250µA
22 nC @ 10 V
1179 pF @ 75 V
±25V
-
2W
63mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
2SK2552-T1-A
Renesas Electronics Corporation

SMALL SIGNAL FET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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APT50M85JVR
Microchip Technology

MOSFET N-CH 500V 50A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
50A (Tc)
-
4V @ 1mA
535 nC @ 10 V
10800 pF @ 25 V
-
-
-
85mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
TP65H300G4JSGB-TR
Transphorm

GANFET N-CH 650V 9.2A QFN5X6

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V
  • Vgs(th) (Max) @ Id: 2.8V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 41.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerTDFN
封装: -
库存11,826
GaNFET (Gallium Nitride)
650 V
9.2A (Tc)
6V
2.8V @ 500µA
3.5 nC @ 10 V
400 pF @ 400 V
±10V
-
41.6W (Tc)
312mOhm @ 6.5A, 6V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
SSM6K518NU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 6A 6UDFNB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
封装: -
库存18,414
MOSFET (Metal Oxide)
20 V
6A (Ta)
1.5V, 4.5V
1V @ 1mA
3.6 nC @ 4.5 V
410 pF @ 10 V
±8V
-
1.25W (Ta)
33mOhm @ 4A, 4.5V
150°C
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
NTH4L027N65S3F
onsemi

MOSFET N-CH 650V 75A TO247-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
封装: -
Request a Quote
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
5V @ 3mA
259 nC @ 10 V
7690 pF @ 400 V
±30V
-
595W (Tc)
27.4mOhm @ 35A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
RJK0328DPB-00-J0
Renesas Electronics Corporation

MOSFET N-CH 30V 60A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
封装: -
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MOSFET (Metal Oxide)
30 V
60A (Ta)
-
-
42 nC @ 4.5 V
6380 pF @ 10 V
-
-
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2.1mOhm @ 30A, 10V
-
Surface Mount
LFPAK
SC-100, SOT-669