图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 100A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,424 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 5V, 10V | 2.2V @ 230µA | 550nC @ 10V | 26240pF @ 25V | ±16V | - | 300W (Tc) | 3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 20V 180A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存390,720 |
|
MOSFET (Metal Oxide) | 20V | 180A (Tc) | 4.5V, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | ±20V | - | 210W (Tc) | 4 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 30V 50A 10-POLARPAK
|
封装: 10-PolarPAK? (S) |
库存66,120 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 35nC @ 10V | 1600pF @ 15V | ±20V | - | 5.2W (Ta), 104W (Tc) | 7.2 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (S) | 10-PolarPAK? (S) |
||
IXYS |
MOSFET N-CH 800V 12A PLUS220-S
|
封装: PLUS-220SMD |
库存6,192 |
|
MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 5.5V @ 2.5mA | 51nC @ 10V | 2800pF @ 25V | ±30V | - | 360W (Tc) | 850 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
||
IXYS |
MOSFET N-CH 1000V 12A TO268
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存2,496 |
|
MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | ±20V | - | 300W (Tc) | 1.05 Ohm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
IXYS |
MOSFET N-CH 600V 22A PLUS220
|
封装: TO-220-3, Short Tab |
库存7,792 |
|
MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 5.5V @ 250µA | 62nC @ 10V | 3600pF @ 25V | ±30V | - | 400W (Tc) | 350 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 400V 2A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存28,800 |
|
MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 5V @ 250µA | 7.5nC @ 10V | 230pF @ 25V | ±30V | - | 2.5W (Ta), 30W (Tc) | 3.4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 350V 0.09A TO92-3
|
封装: E-Line-3 |
库存3,792 |
|
MOSFET (Metal Oxide) | 350V | 90mA (Ta) | 10V | 3V @ 1mA | - | 70pF @ 25V | ±20V | - | 700mW (Ta) | 35 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC
|
封装: TO-247-3 |
库存15,828 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 4200pF @ 25V | ±20V | - | 280W (Tc) | 270 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 200V 75A TO-220
|
封装: TO-220-3 |
库存3,888 |
|
MOSFET (Metal Oxide) | 200V | 75A (Tc) | 10V | 4V @ 250µA | 84nC @ 10V | 3260pF @ 25V | ±20V | - | 190W (Tc) | 34 mOhm @ 37A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 160A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,328 |
|
MOSFET (Metal Oxide) | 30V | 160A (Tc) | 10V | 2.35V @ 150µA | 83nC @ 4.5V | 8020pF @ 25V | ±20V | - | 195W (Tc) | 1.95 mOhm @ 148A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,296 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
IXYS |
MOSFET N-CH 150V 80A TO-264AA
|
封装: TO-264-3, TO-264AA |
库存2,176 |
|
MOSFET (Metal Oxide) | 150V | 80A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 4500pF @ 25V | ±20V | - | 360W (Tc) | 22.5 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
ON Semiconductor |
MOSFET N-CH 60V 100A
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,184 |
|
MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4V, 10V | - | 220nC @ 10V | 12500pF @ 20V | ±20V | - | 1.65W (Ta), 90W (Tc) | 4.7 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 600V 29A TO-247
|
封装: TO-247-3 |
库存5,968 |
|
MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 5V @ 250µA | 80.4nC @ 10V | 2785pF @ 50V | ±25V | - | 190W (Tc) | 110 mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CHAN 80V POWERPAK 8X8L
|
封装: 8-PowerTDFN |
库存6,480 |
|
MOSFET (Metal Oxide) | 80V | 150A (Tc) | 10V | 3.5V @ 250µA | 144nC @ 10V | 8625pF @ 25V | ±20V | - | 136W (Tc) | 3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? 8 x 8 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N CH 600V 2A TO-220FP
|
封装: TO-220-3 Full Pack |
库存17,280 |
|
MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.5V @ 50µA | 12nC @ 10V | 235pF @ 50V | ±30V | - | 20W (Tc) | 4.5 Ohm @ 1A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 120A TO220AB
|
封装: TO-220-3 |
库存24,138 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 1mA | 136nC @ 10V | 9710pF @ 20V | ±20V | - | 338W (Tc) | 1.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Microchip Technology |
MOSFET N-CH 450V 0.136A TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存12,624 |
|
MOSFET (Metal Oxide) | 450V | 200mA (Ta) | 0V | - | - | 360pF @ 25V | ±20V | Depletion Mode | 740mW (Ta) | 20 Ohm @ 150mA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
||
Texas Instruments |
MOSFET N-CH 100V 50A 8VSON
|
封装: 8-PowerVDFN |
库存6,272 |
|
MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 3.6V @ 250µA | 21nC @ 10V | 1680pF @ 50V | ±20V | - | 2.8W (Ta), 83W (Tc) | 14.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V TO251 TUBE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 28.4 nC @ 10 V | 1406 pF @ 30 V | ±20V | - | 3.3W (Ta), 96W (Tc) | 10.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPAK |
||
Linear Integrated Systems, Inc. |
P-CHANNEL, SINGLE ENHANCEMENT MO
|
封装: - |
库存1,635 |
|
MOSFET (Metal Oxide) | 40 V | 50mA | 20V | 5V @ 10µA | - | 3.5 pF @ 15 V | -6.5V | - | 375mW | 250Ohm @ 100µA, 20V | - | Through Hole | TO-72-4 | TO-206AF, TO-72-4 Metal Can |
||
IXYS |
MOSFET N-CH 1000V 5A TO204AA
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1000 V | 5A (Tc) | 10V | 4.5V @ 250µA | 130 nC @ 10 V | 2600 pF @ 25 V | ±20V | - | 180W (Tc) | 2Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA (IXTM) | TO-204AA, TO-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V SOT23 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 270mA (Ta) | 4V, 10V | 3V @ 250µA | 1.8 nC @ 10 V | 87 pF @ 25 V | ±20V | - | 380mW (Ta) | 4.2Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
MOSFET P-CH 250V 6A TO220F-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 6A (Tc) | 10V | 5V @ 250µA | 38 nC @ 10 V | 1180 pF @ 25 V | ±30V | - | 50W (Tc) | 620mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
||
EPC |
TRANS GAN BUMPED DIE
|
封装: - |
库存47,556 |
|
GaNFET (Gallium Nitride) | 350 V | 6.3A (Ta) | 5V | 2.5V @ 1mA | 4 nC @ 5 V | 628 pF @ 280 V | +6V, -4V | - | - | 180mOhm @ 6A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Diodes Incorporated |
MOSFET N-CH 20V 630MA SOT523 T&R
|
封装: - |
库存56,100 |
|
MOSFET (Metal Oxide) | 20 V | 630mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.74 nC @ 4.5 V | 60.67 pF @ 16 V | ±6V | - | 280mW (Ta) | 400mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
STMicroelectronics |
SICFET N-CH 650V 90A H2PAK-7
|
封装: - |
库存273 |
|
SiCFET (Silicon Carbide) | 650 V | 90A (Tc) | 18V | 5V @ 1mA | 157 nC @ 18 V | 3300 pF @ 400 V | +22V, -10V | - | 330W (Tc) | 26mOhm @ 50A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
onsemi |
PTNG 80V IN CEBU PQFN88
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 80 V | 33A (Ta), 287A (Tc) | 6V, 10V | 4V @ 650µA | 140 nC @ 10 V | 10400 pF @ 40 V | ±20V | - | 3.3W (Ta) | 1.56mOhm @ 80A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V TO263
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 12A (Ta), 150A (Tc) | 7V, 10V | 4V @ 250µA | 129 nC @ 10 V | 7950 pF @ 50 V | ±25V | - | 1.9W (Ta), 333W (Tc) | 6.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |