图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存3,600 |
|
MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 0V, 10V | 1.8V @ 50µA | 2.8nC @ 7V | 68pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存240,000 |
|
MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | ±30V | Super Junction | 100W (Tc) | 340 mOhm @ 5.8A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Cree/Wolfspeed |
MOSFET N-CH 1200V 42A TO-247-3
|
封装: TO-247-3 |
库存7,632 |
|
SiCFET (Silicon Carbide) | 1200V | 42A (Tc) | 20V | 4V @ 1mA | 90.8nC @ 20V | 1915pF @ 800V | +25V, -5V | - | 215W (Tc) | 110 mOhm @ 20A, 20V | -55°C ~ 135°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 1000V 15A PLUS220SMD
|
封装: PLUS-220SMD |
库存6,720 |
|
MOSFET (Metal Oxide) | 1000V | 15A (Tc) | 10V | 6.5V @ 1mA | 97nC @ 10V | 5140pF @ 25V | ±30V | - | 543W (Tc) | 760 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 19.6A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,672 |
|
MOSFET (Metal Oxide) | 80V | 19.6A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 750pF @ 25V | ±25V | - | 2.5W (Ta), 50W (Tc) | 60 mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 60V 10A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,776 |
|
MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | ±20V | - | 3.7W (Ta), 43W (Tc) | 200 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 600V 13A TO-247
|
封装: TO-247-3 |
库存7,824 |
|
MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 5V @ 250µA | 82nC @ 10V | 2600pF @ 25V | ±30V | - | 190W (Tc) | 540 mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 650V TO220-3
|
封装: TO-220-3 Full Pack |
库存5,328 |
|
MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 400V | ±20V | - | 34W (Tc) | 65 mOhm @ 17.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
IXYS |
MOSFET N-CH 550V 44A 0TO-264
|
封装: TO-264-3, TO-264AA |
库存7,504 |
|
MOSFET (Metal Oxide) | 550V | 44A (Tc) | 10V | 4.5V @ 4mA | 190nC @ 10V | 6400pF @ 25V | ±20V | - | 500W (Tc) | 120 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 500V 30A TO-268
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存4,272 |
|
MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 4.5V @ 250µA | 240nC @ 10V | 8100pF @ 25V | ±20V | - | 400W (Tc) | 200 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
IXYS |
MOSFET N-CH 200V 48A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存390,000 |
|
MOSFET (Metal Oxide) | 200V | 48A (Tc) | 10V | 4.5V @ 250µA | 60nC @ 10V | 3090pF @ 25V | ±30V | - | 250W (Tc) | 50 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 75V 75A TO220AB
|
封装: TO-220-3 |
库存2,448 |
|
MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4V @ 1mA | 165nC @ 10V | 8250pF @ 25V | ±20V | - | 230W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 55A TO252
|
封装: - |
库存7,824 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics America |
MOSFET N-CH 30V 12A 8-SOP
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存4,680,000 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | - | 6nC @ 4.5V | 860pF @ 10V | ±20V | - | 1.8W (Ta) | 11.1 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 60V 13A 8WDFN
|
封装: 8-PowerWDFN |
库存2,768 |
|
MOSFET (Metal Oxide) | 60V | 13A (Ta), 50A (Tc) | 4.5V, 10V | 2V @ 35µA | 4.5nC @ 4.5V | 880pF @ 25V | ±20V | - | 3.1W (Ta), 46W (Tc) | 9.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Vishay Siliconix |
MOSFET N-CH 40V 4.3A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存1,159,596 |
|
MOSFET (Metal Oxide) | 40V | 4.3A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 13nC @ 10V | 370pF @ 20V | ±12V | - | 960mW (Ta), 1.7W (Tc) | 51 mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236 | TO-236-3, SC-59, SOT-23-3 |
||
Texas Instruments |
MOSFET N-CH 60V 200A DDPAK
|
封装: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
库存103,464 |
|
MOSFET (Metal Oxide) | 60V | 200A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 140nC @ 10V | 11430pF @ 30V | ±20V | - | 375W (Tc) | 1.6 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
||
Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存52,158 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 4V @ 80µA | 110nC @ 10V | 1485pF @ 25V | ±20V | - | 136W (Tc) | 14.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 500V 5A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存28,800 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 4.5V @ 250µA | 24nC @ 10V | 620pF @ 25V | ±30V | - | 3.1W (Ta), 74W (Tc) | 1.4 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET N-CH 45V 30.9A/110A PPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 45 V | 30.9A (Ta), 110A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 70 nC @ 10 V | 4000 pF @ 20 V | +20V, -16V | - | 5.2W (Ta), 65.7W (Tc) | 2.83mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
IXYS |
MOSFET N-CH 18A TO264
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 24A TO220SIS
|
封装: - |
库存126 |
|
MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 4V @ 1.02mA | 40 nC @ 10 V | 2250 pF @ 300 V | ±30V | - | 45W (Tc) | 110mOhm @ 12A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Diodes Incorporated |
MOSFET N-CH 30V 60A POWERDI3333
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 8.4 nC @ 10 V | 1155 pF @ 15 V | ±20V | - | 2W (Ta) | 7mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET_(20V 40V)
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 40 V | - | 10V | - | 55 nC @ 10 V | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
||
Renesas Electronics Corporation |
70A, 60V, N-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247 83MOH
|
封装: - |
库存426 |
|
SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 5V @ 600µA | 28 nC @ 18 V | 873 pF @ 400 V | +25V, -10V | - | 111W (Tc) | 113mOhm @ 15A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
||
YAGEO XSEMI |
FET N-CH 100V 67.7A TO220CFM
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 100 V | 67.7A (Ta) | 10V | 4V @ 250µA | 131 nC @ 10 V | 6560 pF @ 80 V | ±20V | - | 1.92W (Ta), 32.8W (Tc) | 3.88mOhm @ 35A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220CFM | TO-220-3 Full Pack |
||
Infineon Technologies |
COOLMOS CFD7 SUPERJUNCTION MOSFE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 4.5V @ 420µA | 36 nC @ 10 V | 1694 pF @ 400 V | ±20V | - | 127W (Tc) | 130mOhm @ 8.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
||
Micro Commercial Co |
N-CHANNEL MOSFET,TO-220F
|
封装: - |
库存14,985 |
|
MOSFET (Metal Oxide) | 900 V | 8A (Tc) | 10V | 4V @ 250µA | 13.6 nC @ 10 V | 474 pF @ 25 V | ±30V | - | 113W (Tc) | 1.3Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |