图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 12.7A DIRECTFET
|
封装: DirectFET? Isometric ST |
库存5,072 |
|
MOSFET (Metal Oxide) | 40V | 12.7A (Ta), 55A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 29nC @ 4.5V | 2560pF @ 20V | ±20V | - | 2.1W (Ta), 42W (Tc) | 8.3 mOhm @ 12.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? ST | DirectFET? Isometric ST |
||
Infineon Technologies |
MOSFET N-CH 100V 100A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存11,496 |
|
MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | ±20V | - | 300W (Tc) | 5.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 20V 85A TO-220AB
|
封装: TO-220-3 |
库存43,200 |
|
MOSFET (Metal Oxide) | 20V | 85A (Tc) | 4.5V, 7V | 700mV @ 250µA | 78nC @ 4.5V | 3300pF @ 15V | ±10V | - | 110W (Tc) | 8 mOhm @ 51A, 7V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Microsemi Corporation |
MOSFET N-CH 400V TO-204AE TO-3
|
封装: TO-204AE |
库存7,584 |
|
MOSFET (Metal Oxide) | 400V | 14A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 400 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AE |
||
NXP |
MOSFET N-CH 75V 45A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,056 |
|
MOSFET (Metal Oxide) | 75V | 45A (Tc) | 10V | 4V @ 1mA | 48nC @ 10V | 2385pF @ 25V | ±20V | - | 158W (Tc) | 26 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 30V 6A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存42,780 |
|
MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 30nC @ 10V | 950pF @ 24V | ±20V | Schottky Diode (Isolated) | 2W (Ta) | 32 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,976 |
|
MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | ±20V | - | 3.7W (Ta), 43W (Tc) | 200 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
封装: - |
库存2,320 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 800V 20A TO-264AA
|
封装: TO-264-3, TO-264AA |
库存5,296 |
|
MOSFET (Metal Oxide) | 800V | 20A (Tc) | 10V | 4.5V @ 4mA | 200nC @ 10V | 5100pF @ 25V | ±20V | - | 360W (Tc) | 420 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
IXYS |
MOSFET P-CH 100V 140A TO-268
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存5,408 |
|
MOSFET (Metal Oxide) | 100V | 140A (Tc) | 10V | 4V @ 250µA | 400nC @ 10V | 31400pF @ 25V | ±15V | - | 568W (Tc) | 12 mOhm @ 70A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
ON Semiconductor |
MOSFET P-CH 30V DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,176 |
|
MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.6V @ 1mA | 47nC @ 10V | 2430pF @ 10V | ±20V | - | 60W (Tc) | 13 mOhm @ 28A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET P-CH 45V 8A CPT3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存86,148 |
|
MOSFET (Metal Oxide) | 45V | 8A (Ta) | 4V, 10V | 3V @ 1mA | 93.4nC @ 5V | 11000pF @ 10V | ±20V | - | 15W (Tc) | 91 mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 30V 150MA SMCP
|
封装: SC-75, SOT-416 |
库存74,100 |
|
MOSFET (Metal Oxide) | 30V | 150mA (Ta) | 1.5V, 4V | - | 1.58nC @ 10V | 7pF @ 10V | ±10V | - | 150mW (Ta) | 3.7 Ohm @ 80mA, 4V | 150°C (TJ) | Surface Mount | SMCP | SC-75, SOT-416 |
||
STMicroelectronics |
MOSFET N-CH 800V 14A TO220FP
|
封装: TO-220-3 Full Pack |
库存6,400 |
|
MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 5V @ 250µA | 26nC @ 10V | 866pF @ 100V | ±30V | - | 30W (Tc) | 340 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 200V 90A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,760 |
|
MOSFET (Metal Oxide) | 200V | 90A (Tc) | 7.5V, 10V | 4V @ 250µA | 96nC @ 10V | 4132pF @ 100V | ±20V | - | 375W (Tc) | 17 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 35A TO-220
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存6,816 |
|
MOSFET (Metal Oxide) | 80V | 35A (Tc) | 10V | 4V @ 300µA | 25nC @ 10V | 1700pF @ 40V | ±20V | - | 30W (Tc) | 12.2 mOhm @ 17.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Diodes Incorporated |
MOSFET N-CH 20V 3.6A SOT-23-6
|
封装: SOT-23-6 |
库存1,627,668 |
|
MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 2.5V, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | 837pF @ 10V | ±12V | - | 1.1W (Ta) | 55 mOhm @ 7.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 13A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存356,964 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 3V @ 250µA | 96nC @ 10V | 3845pF @ 15V | ±25V | - | 2.5W (Ta) | 9.3 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V TSOT26 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 4 nC @ 4.5 V | 328 pF @ 10 V | ±12V | - | 900mW | 67mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 79A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 112 nC @ 10 V | 5697 pF @ 20 V | ±20V | - | 3.9W (Ta), 119W (Tc) | 11mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Taiwan Semiconductor Corporation |
600V, 4A, SINGLE N-CHANNEL POWER
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 4V @ 250µA | 9.6 nC @ 10 V | 315 pF @ 100 V | ±30V | - | 36.8W (Tc) | 900mOhm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 30V 19A/35A PPAK
|
封装: - |
库存90 |
|
MOSFET (Metal Oxide) | 30 V | 19A (Ta), 35A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 42 nC @ 10 V | 1700 pF @ 15 V | ±20V | - | 3.8W (Ta), 52W (Tc) | 6mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
||
STMicroelectronics |
MOSFET N-CH 600V 15A TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 4.75V @ 250µA | 20 nC @ 10 V | 800 pF @ 100 V | ±25V | - | 130W (Tc) | 230mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V X2-TSN0808-
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 7.4A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 5.1 nC @ 4 V | 409 pF @ 10 V | ±8V | - | 690mW | 21mOhm @ 1.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-TSN0808-4 | 4-XFDFN |
||
Renesas Electronics Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 100mA (Ta) | 1.5V, 4V | 1.1V @ 1µA | - | 6 pF @ 3 V | ±7V | - | 200mW | 15Ohm @ 10mA, 4V | 150°C | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET P-CH 30V 80A TO220-3
|
封装: - |
库存1,686 |
|
MOSFET (Metal Oxide) | 30 V | 80A (Tc) | - | 2V @ 253µA | 160 nC @ 10 V | 11300 pF @ 25 V | +5V, -16V | - | 137W (Tc) | 4.4mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Micro Commercial Co |
N-CHANNEL MOSFET, DPAK
|
封装: - |
库存29,832 |
|
MOSFET (Metal Oxide) | 40 V | 60A | - | 2V @ 250µA | 27 nC @ 10 V | 1650 pF @ 20 V | ±20V | - | 70W | 7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 40V PWRDI3333
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 24A (Ta), 100A (Tc) | 5V, 10V | 2.5V @ 250µA | 40.1 nC @ 10 V | 2798 pF @ 20 V | ±20V | - | 2.62W (Ta), 65.2W (Tc) | 3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |