图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
MOSFET N-CH TO-204AA TO-3
|
封装: TO-204AA, TO-3 |
库存7,952 |
|
MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 210 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA | TO-204AA, TO-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 8V 3.5A 4WLCSP
|
封装: 4-SMD, No Lead |
库存4,704 |
|
MOSFET (Metal Oxide) | 8V | 3.5A (Ta) | 1.2V, 2.5V | 650mV @ 250µA | 27nC @ 4.5V | 1935pF @ 4V | ±5V | - | 550mW (Ta) | 28 mOhm @ 1.5A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-AlphaDFN (1.57x1.57) | 4-SMD, No Lead |
||
Vishay Siliconix |
MOSFET N-CH 20V 6.8A 8TSSOP
|
封装: 8-TSSOP (0.173", 4.40mm Width) |
库存6,656 |
|
MOSFET (Metal Oxide) | 20V | 6.8A (Ta) | 2.5V, 4.5V | 450mV @ 250µA (Min) | 27nC @ 5V | - | ±8V | - | 1.05W (Ta) | 14 mOhm @ 8.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
IXYS |
MOSFET N-CH 800V 8A ISOPLUS220
|
封装: ISOPLUS220? |
库存6,096 |
|
MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 5.5V @ 4mA | 61nC @ 10V | 3900pF @ 25V | ±30V | - | 130W (Tc) | 770 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,216 |
|
MOSFET (Metal Oxide) | 80V | 75A (Tc) | 10V | 4V @ 250µA | 235nC @ 20V | 3750pF @ 25V | ±20V | - | 270W (Tc) | 10 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
TRANSISTOR N-CH
|
封装: - |
库存6,528 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 500V 64A ISOPLUS264
|
封装: ISOPLUS264? |
库存4,192 |
|
MOSFET (Metal Oxide) | 500V | 55A (Tc) | 10V | 5V @ 8mA | 260nC @ 10V | 10500pF @ 25V | ±30V | - | 625W (Tc) | 66 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264? | ISOPLUS264? |
||
Microsemi Corporation |
MOSFET N-CH 500V 42A D3PAK
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存6,208 |
|
MOSFET (Metal Oxide) | 500V | 42A (Tc) | 10V | 5V @ 1mA | 170nC @ 10V | 6810pF @ 25V | ±30V | - | 625W (Tc) | 130 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
IXYS |
MOSFET N-CH 500V 2.7A TO-220
|
封装: TO-220-3 |
库存7,472 |
|
MOSFET (Metal Oxide) | 500V | 2.7A (Tc) | 10V | 5.5V @ 250µA | 9.3nC @ 10V | 409pF @ 25V | ±30V | - | 36W (Tc) | 2 Ohm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI506
|
封装: 8-PowerTDFN |
库存6,608 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3V @ 250µA | 48nC @ 10V | 2847pF @ 20V | 20V | - | 2.8W | 4 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET P-CH 30V 5.7A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存1,025,868 |
|
MOSFET (Metal Oxide) | 30V | 5.7A (Ta) | 4.5V, 10V | 3V @ 250µA | 20nC @ 5V | - | ±20V | - | 1.5W (Ta) | 30 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET N-CH 30V 0.115A
|
封装: SOT-523 |
库存5,616 |
|
MOSFET (Metal Oxide) | 30V | 115mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | 0.55nC @ 10V | 48pF @ 5V | ±20V | - | 240mW (Ta) | 5 Ohm @ 10mA, 4V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
封装: TO-261-4, TO-261AA |
库存4,512 |
|
MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 3V @ 250µA | 7nC @ 5V | 555pF @ 15V | ±20V | - | 3W (Ta) | 60 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 25A 8DFN
|
封装: 8-PowerWDFN |
库存132,492 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta), 50A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 51nC @ 10V | 2940pF @ 15V | ±25V | - | 6.25W (Ta), 83W (Tc) | 6.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
||
Microsemi Corporation |
MOSFET N-CH 600V 77A SOT-227
|
封装: SOT-227-4, miniBLOC |
库存6,016 |
|
MOSFET (Metal Oxide) | 600V | 77A | 10V | 3.9V @ 5.4mA | 640nC @ 10V | 13600pF @ 25V | ±20V | - | 568W (Tc) | 35 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
Vishay Siliconix |
MOSFET N-CH 60V 8A TO220FP
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存15,864 |
|
MOSFET (Metal Oxide) | 60V | 8A (Tc) | 4V, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | ±10V | - | 27W (Tc) | 200 mOhm @ 4.8A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Panasonic Electronic Components |
MOSFET N-CH 30V 10A 8HSSO
|
封装: 8-SMD, Flat Lead |
库存36,000 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta), 19A (Tc) | 4.5V, 10V | 3V @ 1.01mA | 6.3nC @ 4.5V | 1092pF @ 10V | ±20V | - | 2W (Ta), 19W (Tc) | 10 mOhm @ 70A, 10V | 150°C (TJ) | Surface Mount | 8-HSSO | 8-SMD, Flat Lead |
||
Texas Instruments |
MOSFET N-CH 30V 5.9A PICOSTAR
|
封装: 3-XFDFN |
库存22,338 |
|
MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 1.7V @ 250µA | 5.1nC @ 10V | 380pF @ 15V | ±20V | - | 500mW (Ta) | 27 mOhm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 11A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存24,000 |
|
MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V, 10V | 2.5V @ 250µA | 6.4nC @ 5V | 350pF @ 25V | ±20V | - | 2.5W (Ta), 28W (Tc) | 115 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 200MA TO-236AB
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存191,718 |
|
MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 2.5V, 10V | 1.5V @ 250µA | 0.44nC @ 4.5V | 13pF @ 10V | ±20V | - | 300mW (Ta), 1.06W (Tc) | 4.5 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 300mA (Ta) | 2.7V, 4.5V | 1.1V @ 250µA | 0.4 nC @ 4.5 V | 24 pF @ 10 V | 8V | - | 440mW (Ta) | 4Ohm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET N-CH 80V 120A TO220-3
|
封装: - |
库存2,220 |
|
MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 4.5V @ 250µA | 178 nC @ 10 V | 13530 pF @ 40 V | ±20V | - | 246W (Tc) | 2.7mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH SMD
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET N-CH 60V 18A/98A DPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 18A (Ta), 98A (Tc) | 10V | 4V @ 250µA | 82 nC @ 10 V | 6000 pF @ 25 V | ±20V | - | 4.1W (Ta), 115W (Tc) | 5.7mOhm @ 48A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Harris Corporation |
MOSFET N-CH 30V 42A TO220AB
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 42A (Tc) | - | 2V @ 250µA | 60 nC @ 10 V | 1650 pF @ 25 V | ±10V | - | 90W (Tc) | 25mOhm @ 42A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
NCH 600V 14A, TO-220AB, POWER MO
|
封装: - |
库存2,988 |
|
MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V, 12V | 6V @ 1.4mA | 20 nC @ 10 V | 890 pF @ 100 V | ±30V | - | 132W (Tc) | 260mOhm @ 5A, 12V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 38A TO263-3
|
封装: - |
库存3,150 |
|
MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 4.5V @ 900µA | 79 nC @ 10 V | 3194 pF @ 400 V | ±20V | - | 178W (Tc) | 55mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 4.4A (Ta), 16A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14 nC @ 10 V | 815 pF @ 15 V | ±20V | - | 2W (Ta), 27W (Tc) | 50mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
||
STMicroelectronics |
SICFET N-CH 1200V 20A HIP247
|
封装: - |
库存144 |
|
SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 3.5V @ 1mA | 45 nC @ 20 V | 650 pF @ 400 V | +25V, -10V | - | 153W (Tc) | 239mOhm @ 10A, 20V | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |