图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH WAFER
|
封装: - |
库存2,544 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 30V 62A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,312 |
|
MOSFET (Metal Oxide) | 30V | 62A (Tc) | 2.8V, 10V | 2V @ 250µA | 24nC @ 4.5V | 2417pF @ 15V | ±12V | - | 87W (Tc) | 12 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 280MA SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存6,000 |
|
MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 5V, 10V | 2.5V @ 250µA | - | 50pF @ 25V | ±20V | - | 300mW (Ta) | 2 Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CHANNEL_100+
|
封装: - |
库存5,856 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
CONSUMER
|
封装: - |
库存2,896 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 500V 30A TO-268 D3
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存6,064 |
|
MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 5V @ 4mA | 70nC @ 10V | 4150pF @ 25V | ±30V | - | 460W (Tc) | 200 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Diodes Incorporated |
MOSFET NCH 60V 55A POWERDI
|
封装: 8-PowerTDFN |
库存3,568 |
|
MOSFET (Metal Oxide) | 60V | 55A (Tc) | 4.5V, 10V | 3V @ 250µA | 19.7nC @ 10V | 1016pF @ 30V | ±20V | - | 1.6W (Ta), 53W (Tc) | 23 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 250V 8A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,880 |
|
MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 4V @ 250µA | 16nC @ 10V | 500pF @ 25V | ±20V | - | 72W (Tc) | 420 mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 50V 220MA SOT-23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存454,224 |
|
MOSFET (Metal Oxide) | 50V | 220mA (Ta) | 1.8V, 2.5V | 1.2V @ 250µA | 2.4nC @ 10V | 58pF @ 25V | ±12V | - | 350mW (Ta) | 1.6 Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 12A 8DFN
|
封装: 8-PowerSMD, Flat Leads |
库存8,076 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta), 34A (Tc) | 5V, 10V | 3V @ 250µA | 21nC @ 10V | 1400pF @ 15V | ±25V | - | 4.1W (Ta), 31W (Tc) | 17 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Infineon Technologies |
MOSFET NCH 200V 72A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存8,220 |
|
MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | ±20V | - | 375W (Tc) | 22 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | - | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 600V 32A D2PAK TO263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存20,328 |
|
MOSFET (Metal Oxide) | 650V | 32A (Tc) | 10V | 4V @ 250µA | 132nC @ 10V | 2760pF @ 100V | ±30V | - | 250W (Tc) | 94 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 650V 45A TO-247
|
封装: TO-247-3 |
库存48,276 |
|
MOSFET (Metal Oxide) | 650V | 45A (Tc) | 10V | 5V @ 250µA | 134nC @ 10V | 3800pF @ 25V | ±30V | - | 417W (Tc) | 110 mOhm @ 22.5A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N CH 30V 18A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存4,720 |
|
MOSFET (Metal Oxide) | 30V | 18A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 36nC @ 10V | 1900pF @ 15V | ±20V | - | 3.1W (Ta) | 6.5 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 150V 100A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存120,204 |
|
MOSFET (Metal Oxide) | 150V | 100A (Tc) | 8V, 10V | 4V @ 270µA | 93nC @ 10V | 5470pF @ 75V | ±20V | - | 300W (Tc) | 7.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 75V 60A 10-POLARPAK
|
封装: 10-PolarPAK? (L) |
库存48,408 |
|
MOSFET (Metal Oxide) | 75V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 95nC @ 10V | 3200pF @ 38V | ±20V | - | 5.2W (Ta), 125W (Tc) | 9.5 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (L) | 10-PolarPAK? (L) |
||
onsemi |
SICFET N-CH 1200V 17A TO247-3
|
封装: - |
库存1,350 |
|
SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 20V | 4.3V @ 2.5mA | 34 nC @ 20 V | 665 pF @ 800 V | +25V, -15V | - | 119W (Tc) | 224mOhm @ 12A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Nexperia USA Inc. |
OP540/BD - CUSTOM MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 47A (Tc) | 4.5V, 10V | 3V @ 250µA | 30 nC @ 10 V | 850 pF @ 25 V | ±20V | - | 75W (Tc) | 21mOhm @ 47A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
MOSFET N-CH 60V 20A TO252AA
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 3V @ 250µA | 46 nC @ 10 V | 1480 pF @ 25 V | ±16V | - | 110W (Tc) | 23mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V PowerDI50
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 25A (Tc) | 10V | 4V @ 250µA | 8 nC @ 10 V | 544 pF @ 50 V | ±20V | - | 3.2W (Ta), 38W (Tc) | 32mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Micro Commercial Co |
MOSFET N-CH 100V 40A DFN5060
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 40A (Tj) | 10V | 4V @ 250µA | 30.6 nC @ 10 V | 1684 pF @ 50 V | ±20V | - | 70W | 12mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 250V 2.8A/4.1A 8SO
|
封装: - |
库存29,520 |
|
MOSFET (Metal Oxide) | 250 V | 2.8A (Ta), 4.1A (Tc) | 7.5V, 10V | 4V @ 250µA | 16.5 nC @ 10 V | 600 pF @ 125 V | ±20V | - | 2.9W (Ta), 6W (Tc) | 150mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Wolfspeed, Inc. |
SICFET N-CH 650V 120A TO247-3
|
封装: - |
库存2,811 |
|
SiCFET (Silicon Carbide) | 650 V | 120A (Tc) | 15V | 3.6V @ 15.5mA | 188 nC @ 15 V | 5011 pF @ 400 V | +15V, -4V | - | 416W (Tc) | 21mOhm @ 55.8A, 15V | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 500mA (Ta) | 1.5V, 4.5V | 1.1V @ 250µA | 0.87 nC @ 4.5 V | 34 pF @ 15 V | ±10V | - | 350mW (Ta) | 1.2Ohm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
onsemi |
MOSFET N-CH 650V 20.6A TO220F-3
|
封装: - |
库存2,583 |
|
MOSFET (Metal Oxide) | 650 V | 20.6A (Tc) | - | 5V @ 2mA | 78 nC @ 10 V | 3055 pF @ 100 V | ±20V | - | 39W (Tc) | 190mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
||
MOSLEADER |
Single P -30V 0.9A SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
POWER MOSFET, N-CHANNEL, QFET, 8
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Nexperia USA Inc. |
P-CHANNEL TRENCH MOSFET
|
封装: - |
库存2,613 |
|
MOSFET (Metal Oxide) | 30 V | 7.7A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 47 nC @ 10 V | 1570 pF @ 15 V | ±20V | - | 1.9W (Ta), 13W (Tc) | 21mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020M-6 | 6-UDFN Exposed Pad |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO220-FP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23 nC @ 10 V | 440 pF @ 100 V | ±20V | - | 28W (Tc) | 600mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |