图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 120A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,168 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | ±20V | - | 200W (Tc) | 3.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 600V 7.3A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存554,340 |
|
MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 5.5V @ 350µA | 35nC @ 10V | 970pF @ 25V | ±20V | - | 83W (Tc) | 600 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V DPAK
|
封装: - |
库存6,288 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 2.7A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,024 |
|
MOSFET (Metal Oxide) | 200V | 2.7A (Tc) | 10V | 4V @ 250µA | 9.3nC @ 10V | 225pF @ 25V | ±30V | - | 2.5W (Ta), 26W (Tc) | 1.5 Ohm @ 1.35A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
NXP |
MOSFET N-CH 25V 75A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,888 |
|
MOSFET (Metal Oxide) | 25V | 75A (Tc) | 10V | 3.2V @ 1mA | 17.1nC @ 10V | 860pF @ 12V | ±20V | - | 107W (Tc) | 9.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 500V 30A PLUS220
|
封装: TO-220-3, Short Tab |
库存3,056 |
|
MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 5V @ 250µA | 70nC @ 10V | 4150pF @ 25V | ±30V | - | 460W (Tc) | 200 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 5.8A TO-220
|
封装: TO-220-3 |
库存103,740 |
|
MOSFET (Metal Oxide) | 900V | 5.8A (Tc) | 10V | 5V @ 250µA | 52nC @ 10V | 1880pF @ 25V | ±30V | - | 167W (Tc) | 1.9 Ohm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,520 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 2V @ 250µA | 230nC @ 10V | 5700pF @ 25V | ±20V | - | 300W (Tc) | 4.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
IXYS |
MOSFET N-CH 600V 10A TO-220
|
封装: TO-220-3 |
库存7,760 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 5.5V @ 250µA | 32nC @ 10V | 1610pF @ 25V | ±30V | - | 200W (Tc) | 740 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 500V 20A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,768 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 250µA | 53nC @ 10V | 1380pF @ 25V | ±30V | - | 192W (Tc) | 250 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
封装: TO-220-3 Full Pack |
库存18,396 |
|
MOSFET (Metal Oxide) | 40V | 82A | 4.5V, 10V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | ±20V | - | 36W (Tc) | 3.8 mOhm @ 30A, 4.5V | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET P-CH 150V 2.8A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存60,000 |
|
MOSFET (Metal Oxide) | 150V | 2.8A (Tc) | 10V | 4V @ 250µA | 42nC @ 10V | 1190pF @ 50V | ±20V | - | 3.1W (Ta), 5.9W (Tc) | 295 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 20A POWER33
|
封装: 8-PowerWDFN |
库存618,468 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta), 20A (Tc) | 4.5V, 10V | 3V @ 250µA | 22nC @ 10V | 1430pF @ 15V | ±20V | - | 2.4W (Ta), 25W (Tc) | 11.5 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 80V 120A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存32,844 |
|
MOSFET (Metal Oxide) | 80V | 120A (Tc) | 5V | 2.1V @ 1mA | 123nC @ 5V | 17130pF @ 25V | ±10V | - | 349W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 79A LFPAK
|
封装: SC-100, SOT-669 |
库存23,532 |
|
MOSFET (Metal Oxide) | 40V | 79A (Tc) | 10V | 4V @ 1mA | 26.2nC @ 10V | 1650pF @ 25V | ±20V | - | 94.3W (Tc) | 7.6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Vishay Siliconix |
MOSFET N-CH 60V 10A TO-220AB
|
封装: TO-220-3 |
库存167,136 |
|
MOSFET (Metal Oxide) | 60V | 10A (Tc) | 4V, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | ±10V | - | 43W (Tc) | 200 mOhm @ 6A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH SMD
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 600V 10.6A TO220-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 3.5V @ 320µA | 32 nC @ 10 V | 700 pF @ 100 V | ±20V | - | 83W (Tc) | 380mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 30V 80A TO263-3
|
封装: - |
库存22,281 |
|
MOSFET (Metal Oxide) | 30 V | 80A (Tc) | - | 2V @ 253µA | 160 nC @ 10 V | 11300 pF @ 25 V | +5V, -16V | - | 137W (Tc) | 4.4mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT523 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 870mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.6 nC @ 4.5 V | 42 pF @ 16 V | ±6V | - | 320mW (Ta) | 450mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
Renesas Electronics Corporation |
SMALL SIGNAL P-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET P-CH 150V 44A TO263
|
封装: - |
库存69,444 |
|
MOSFET (Metal Oxide) | 150 V | 44A (Tc) | 10V | 4V @ 250µA | 175 nC @ 10 V | 13400 pF @ 25 V | ±15V | - | 298W (Tc) | 65mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 40V 250A TO263-7
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 250A (Tc) | 10V | 3.5V @ 250µA | 245 nC @ 10 V | 15000 pF @ 25 V | ±20V | - | 300W (Tc) | 1mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2PAK (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET_(75V 120V( PG-TSDSON-8
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 80 V | 30A (Tj) | 6V, 10V | 3.8V @ 13µA | 12.1 nC @ 10 V | 759 pF @ 40 V | ±20V | - | 41W (Tc) | 18.6mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-32 | 8-PowerTDFN |
||
Renesas |
NP82N10PUF-E1-AY - MOS FIELD EFF
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 82A (Tc) | 5.8V, 10V | 3.3V @ 250µA | 96 nC @ 10 V | 4350 pF @ 25 V | ±20V | - | 1.8W (Ta), 150W (Tc) | 15mOhm @ 41A, 10V | 175°C | Surface Mount | TO-263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 100 V | 26A (Ta), 276A (Tc) | 6V, 10V | 3.8V @ 159µA | 134 nC @ 10 V | 9500 pF @ 50 V | ±20V | - | 3W (Ta), 333W (Tc) | 2.05mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-U04 | 8-PowerTDFN |
||
Nexperia USA Inc. |
PMPB29XNEA/SOT1220/SOT1220
|
封装: - |
Request a Quote |
|
- | - | 5A (Tj) | - | - | - | - | ±8V | - | - | - | - | - | - | - |
||
Goford Semiconductor |
N20V, 5A, RD<18M@10V,VTH0.4V~1.0
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 20 V | 5A (Tc) | 2.5V, 10V | 1V @ 250µA | 11 nC @ 4.5 V | 780 pF @ 10 V | ±12V | - | 1.25W (Tc) | 18mOhm @ 4.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 49A/85A
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 49A (Ta), 85A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 105 nC @ 10 V | 5570 pF @ 20 V | ±20V | - | 6.2W (Ta), 119W (Tc) | 1.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT23 T&R 3
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 20 V | 4.9A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 15.4 nC @ 4.5 V | 1610 pF @ 10 V | ±10V | - | 810mW (Ta) | 35mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |