图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 22A TSDSON-8
|
封装: 8-PowerTDFN |
库存3,216 |
|
MOSFET (Metal Oxide) | 40V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 37nC @ 10V | 2630pF @ 20V | ±20V | - | 2.1W (Ta), 69W (Tc) | 2.35 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 75V 80A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,960 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 6130pF @ 25V | ±20V | - | 300W (Tc) | 7.4 mOhm @ 66A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 20V 54A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,392 |
|
MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 3V @ 250µA | 17nC @ 4.5V | 1060pF @ 10V | ±20V | - | 3.8W (Ta), 71W (Tc) | 14 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存6,592 |
|
MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | ±30V | - | 2.5W (Ta) | 60 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET TO-251A
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存37,248 |
|
MOSFET (Metal Oxide) | 25V | 55A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 26nC @ 10V | 1450pF @ 12.5V | ±20V | - | 3.2W (Ta), 50W (Tc) | 7.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Short Leads, IPak, TO-251AA |
||
Renesas Electronics America |
MOSFET N-CH 40V 100A
|
封装: TO-220-3 |
库存4,640 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 250µA | 102nC @ 10V | 5850pF @ 25V | ±20V | - | 1.8W (Ta), 147W (Tc) | 3.3 mOhm @ 45A, 10V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Renesas Electronics America |
MOSFET N-CH 250V 17A TO3P
|
封装: 8-PowerWDFN |
库存11,172 |
|
MOSFET (Metal Oxide) | 250V | 17A (Ta) | 10V | - | 39nC @ 10V | 2400pF @ 25V | ±30V | - | 30W (Tc) | 104 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
||
Vishay Siliconix |
MOSFET N-CH 30V 16A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,009,348 |
|
MOSFET (Metal Oxide) | 30V | 16A (Tc) | 4.5V, 10V | 1.5V @ 250µA | 45nC @ 10V | 2080pF @ 15V | ±12V | - | 2.5W (Ta), 4.45W (Tc) | 9.4 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 13.4A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存225,960 |
|
MOSFET (Metal Oxide) | 30V | 13.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 28nC @ 10V | 1452pF @ 15V | ±12V | - | 3.7W (Ta) | 11.5 mOhm @ 13.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 45V 0.23A TO92-3
|
封装: E-Line-3 |
库存2,208 |
|
MOSFET (Metal Oxide) | 45V | 230mA (Ta) | 10V | 3.5V @ 1mA | - | 60pF @ 10V | ±20V | - | 700mW (Ta) | 14 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
NXP |
MOSFET N-CH 30V 68A LFPAK
|
封装: SC-100, SOT-669 |
库存2,560 |
|
MOSFET (Metal Oxide) | 30V | 68A (Tc) | 4.5V, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | ±20V | - | 62.5W (Tc) | 7.9 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Vishay Siliconix |
MOSFET P-CH 50V 9.7A TO-220AB
|
封装: TO-220-3 |
库存62,448 |
|
MOSFET (Metal Oxide) | 50V | 9.7A (Tc) | 10V | 4V @ 250µA | 26nC @ 10V | 480pF @ 25V | ±20V | - | 40W (Tc) | 280 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 2.4A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,048 |
|
MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 565pF @ 25V | ±30V | - | 50W (Tc) | 3.4 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 3.3A 8-MLP
|
封装: 8-PowerWDFN |
库存366,468 |
|
MOSFET (Metal Oxide) | 100V | 3.3A (Ta), 7.5A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 6nC @ 10V | 310pF @ 50V | ±20V | - | 2.3W (Ta), 19W (Tc) | 103 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 30V TO220AB
|
封装: TO-220-3 |
库存34,878 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 64nC @ 10V | 3907pF @ 12V | ±20V | - | 114W (Tc) | 3.4 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 43A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存215,724 |
|
MOSFET (Metal Oxide) | 55V | 43A (Tc) | 4.5V, 10V | 2V @ 1mA | - | 1724pF @ 25V | ±15V | - | 94W (Tc) | 22 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存30,384 |
|
MOSFET (Metal Oxide) | 100V | 12A (Ta), 80A (Tc) | 6V, 10V | 4V @ 250µA | 110nC @ 10V | 6000pF @ 25V | ±20V | - | 310W (Tc) | 9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V U-DFN2020-
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 11A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 14.6 nC @ 10 V | 655 pF @ 8 V | ±12V | - | 1.2W (Ta) | 13.5mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
onsemi |
T6-40V N 2.3 MOHMS SL
|
封装: - |
库存4,464 |
|
MOSFET (Metal Oxide) | 40 V | 29A (Ta), 140A (Tc) | 10V | 4V @ 90µA | 32 nC @ 10 V | 2100 pF @ 25 V | ±20V | - | 3.7W (Ta), 83W (Tc) | 2.3mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Diodes Incorporated |
MOSFET N-CH 20V 18A PWRDI3333
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 18A (Ta), 50A (Tc) | 2.5V, 4.5V | 1.2V @ 250µA | 164 nC @ 10 V | 6495 pF @ 10 V | ±12V | - | 1.05W (Ta) | 4.6mOhm @ 13.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
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UMW |
100V 15A 50W 80MR@10V,10A 2.5V@2
|
封装: - |
库存6,060 |
|
MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 3V @ 250µA | 19.2 nC @ 10 V | 632 pF @ 50 V | ±20V | - | 55W (Tc) | 110mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.5A UF6
|
封装: - |
库存7,923 |
|
MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4V, 10V | 2.6V @ 1mA | 16 nC @ 10 V | 730 pF @ 15 V | ±20V | - | 500mW (Ta) | 73mOhm @ 2A, 10V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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onsemi |
MOSFET N-CH 40V 24A/123A DPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 24A (Ta), 123A (Tc) | 10V | 3.5V @ 250µA | 100 nC @ 10 V | 4760 pF @ 25 V | ±20V | - | 4W (Ta), 107W (Tc) | 3.7mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Taiwan Semiconductor Corporation |
-30, -64, SINGLE P-CHANNEL
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 14A (Ta), 64A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 55 nC @ 10 V | 3234 pF @ 15 V | ±20V | - | 2.4W (Ta), 50W (Tc) | 8.5mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3.1x3.1) | 8-PowerWDFN |
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onsemi |
MOSFET N-CH 60V 51A/422A 8HPSOF
|
封装: - |
库存5,292 |
|
MOSFET (Metal Oxide) | 60 V | 51A (Ta), 422A (Tc) | 6V, 10V | 4V @ 562µA | 143 nC @ 10 V | 11575 pF @ 30 V | ±20V | - | 4.2W (Ta), 284W (Tc) | 0.9mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
||
Panjit International Inc. |
60V P-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 8.3 nC @ 10 V | 430 pF @ 30 V | ±20V | - | 3.1W (Ta) | 190mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Renesas |
UPA2706GR-E1-A - MOS FIELD EFFEC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 11A (Ta), 20A (Tc) | 4V, 10V | 2.5V @ 1mA | 7.1 nC @ 5 V | 660 pF @ 10 V | ±20V | - | 3W (Ta), 15W (Tc) | 15mOhm @ 5.5A, 10V | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.173", 4.40mm Width) |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 9.3A (Ta), 52A (Tc) | 4.5V, 10V | 1.8V @ 250µA | 45.8 nC @ 10 V | 2064 pF @ 20 V | ±20V | - | 2W (Ta) | 25mOhm @ 3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
||
Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP
|
封装: - |
Request a Quote |
|
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