图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 5.7A 8DSO
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存15,348 |
|
MOSFET (Metal Oxide) | 30V | 5.7A (Ta) | 4.5V, 10V | 2V @ 8µA | 4.6nC @ 5V | 600pF @ 15V | ±20V | - | 1.56W (Ta) | 30 mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET
|
封装: DirectFET? Isometric MX |
库存5,600 |
|
MOSFET (Metal Oxide) | 30V | 32A (Ta), 150A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 56nC @ 4.5V | 4860pF @ 15V | ±20V | - | 3.9W (Ta), 89W (Tc) | 2.6 mOhm @ 27A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
Infineon Technologies |
MOSFET N-CH 100V 370MA SOT223
|
封装: TO-261-4, TO-261AA |
库存4,336 |
|
MOSFET (Metal Oxide) | 100V | 370mA (Ta) | 2.8V, 10V | 1.8V @ 50µA | 2.4nC @ 10V | 70pF @ 25V | ±20V | - | 1.79W (Ta) | 6 Ohm @ 370mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Renesas Electronics America |
MOSFET P-CH 40V 20A TO-252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存146,220 |
|
MOSFET (Metal Oxide) | 40V | 20A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 34nC @ 10V | 1650pF @ 10V | ±20V | - | 1.2W (Ta), 38W (Tc) | 25 mOhm @ 10A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 1A SC-62
|
封装: TO-243AA |
库存21,480 |
|
MOSFET (Metal Oxide) | 60V | 1A (Ta) | 4V, 10V | 2V @ 1mA | 6.5nC @ 10V | 155pF @ 10V | ±20V | - | 500mW (Ta) | 730 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | PW-MINI | TO-243AA |
||
ON Semiconductor |
MOSFET P-CH 30V 1.13A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存109,872 |
|
MOSFET (Metal Oxide) | 30V | 1.13A (Ta) | 4.5V, 10V | 3V @ 250µA | 10nC @ 10V | 200pF @ 15V | ±20V | - | 400mW (Tj) | 200 mOhm @ 1.95A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB
|
封装: TO-220-3 |
库存4,320 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 275nC @ 20V | 4000pF @ 25V | ±20V | - | 325W (Tc) | 7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET P-CH 30V 2.34A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存6,336 |
|
MOSFET (Metal Oxide) | 30V | 2.34A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | ±20V | - | 730mW (Ta) | 85 mOhm @ 3.05A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,272 |
|
MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 500 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存43,656 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | - | 230W (Tc) | 3.1 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CHANNEL_55/60V
|
封装: - |
库存5,088 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Fairchild/ON Semiconductor |
FCP16N60N IN TO220 F102 T/F OPTI
|
封装: TO-220-3 Full Pack |
库存6,464 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 4V @ 250µA | 52.3nC @ 10V | 2170pF @ 100V | ±30V | - | 134.4W (Tc) | 199 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Diodes Incorporated |
MOSFET NCH 60V 130A TO220AB
|
封装: TO-220-3 |
库存5,648 |
|
MOSFET (Metal Oxide) | 60V | 130A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 2596pF @ 30V | 20V | - | 210W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 12V 9A SC75-6
|
封装: PowerPAK? SC-75-6L |
库存5,056 |
|
MOSFET (Metal Oxide) | 12V | 9A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 20nC @ 8V | 725pF @ 6V | ±8V | - | 2.4W (Ta), 13W (Tc) | 20 mOhm @ 6.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-75-6L Single | PowerPAK? SC-75-6L |
||
ON Semiconductor |
MOSFET N-CH 20V 3.2A SOT-363
|
封装: 6-TSSOP, SC-88, SOT-363 |
库存2,100 |
|
MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 500pF @ 10V | ±8V | - | 1W (Ta) | 60 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
||
Vishay Siliconix |
MOSFET N-CHAN 650V 23A POWERPAK
|
封装: 8-PowerTDFN |
库存5,024 |
|
MOSFET (Metal Oxide) | 650V | 23A (Tc) | 10V | 4V @ 250µA | 116nC @ 10V | 2814pF @ 100V | ±30V | - | 202W (Tc) | 150 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 8 x 8 | 8-PowerTDFN |
||
Rohm Semiconductor |
2.5V DRIVE NCH MOSFET
|
封装: SC-89, SOT-490 |
库存5,344 |
|
MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 10V | 2.3V @ 1mA | - | 15pF @ 25V | ±20V | - | 150W (Tc) | 2.4 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | EMT3F (SOT-416FL) | SC-89, SOT-490 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 12A TO-220F
|
封装: TO-220-3 Full Pack |
库存15,408 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 5V @ 250µA | 39nC @ 10V | 1930pF @ 25V | ±30V | - | 42W (Tc) | 540 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 600V 13A TO220
|
封装: TO-220-3 Full Pack |
库存21,336 |
|
MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 4V @ 250µA | 64nC @ 10V | 1205pF @ 100V | ±30V | - | 147W (Tc) | 309 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 525V 6.2A TO220
|
封装: TO-220-3 |
库存6,752 |
|
MOSFET (Metal Oxide) | 525V | 6A (Tc) | 10V | 4.5V @ 50µA | 34nC @ 10V | 737pF @ 100V | ±30V | - | 90W (Tc) | 980 mOhm @ 3.1A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
MOSFET N-CH 30V 16A 8HSMT
|
封装: 8-PowerVDFN |
库存2,320 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 51nC @ 10V | 2550pF @ 15V | ±20V | - | 2W (Ta) | 4.5 mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET P-CH 150V 13A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存390,708 |
|
MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | ±20V | - | 110W (Tc) | 295 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 190MA SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存6,320 |
|
MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 5V | 2V @ 1mA | - | 40pF @ 10V | ±20V | - | 830mW (Tc) | 10 Ohm @ 150mA, 5V | 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Microchip Technology |
MOSFET N-CH 200V 100A TO264
|
封装: - |
库存75 |
|
MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 5V @ 2.5mA | 140 nC @ 10 V | 7220 pF @ 25 V | - | - | - | 16mOhm @ 50A, 10V | - | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V TO251 TUB
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 84A (Tc) | 6V, 10V | 4V @ 250µA | 30 nC @ 10 V | 2085 pF @ 50 V | ±20V | - | 114W (Tc) | 9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPAK |
||
onsemi |
MOSFET N-CH 60V 75A TO220-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 75A (Tc) | - | 2V @ 250µA | 115 nC @ 5 V | 4000 pF @ 25 V | - | - | - | 15mOhm @ 37.5A, 5V | - | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CHANNEL 200V
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 200 V | 3.5A (Tc) | 10V | 4V @ 250µA | 22 nC @ 10 V | 350 pF @ 25 V | ±20V | - | 40W (Tc) | 1.5Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
650V 15A, TO-220AB, HIGH-SPEED S
|
封装: - |
库存2,868 |
|
MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 5V @ 430µA | 27.5 nC @ 10 V | 1050 pF @ 25 V | ±20V | - | 161W (Tc) | 315mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
库存4,932 |
|
MOSFET (Metal Oxide) | 100 V | 162A (Tc) | 6V, 10V | 3.8V @ 169µA | 154 nC @ 10 V | 7300 pF @ 50 V | ±20V | - | 250W (Tc) | 2.65mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 18A/63A TDSON
|
封装: - |
库存33,714 |
|
MOSFET (Metal Oxide) | 30 V | 18A (Ta), 63A (Tc) | 4.5V, 10V | 2V @ 250µA | 13 nC @ 10 V | 870 pF @ 15 V | ±20V | - | 2.5W (Ta), 30W (Tc) | 4.5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |