图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 104A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,576 |
|
MOSFET (Metal Oxide) | 40V | 104A (Tc) | 4.5V, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | ±16V | - | 2.4W (Ta), 167W (Tc) | 8 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8
|
封装: 8-PowerTDFN |
库存240,000 |
|
MOSFET (Metal Oxide) | 25V | 30A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 110µA | 66nC @ 5V | 8290pF @ 15V | ±20V | - | 2.8W (Ta), 104W (Tc) | 2 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 34A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存3,264 |
|
MOSFET (Metal Oxide) | 150V | 34A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3370pF @ 25V | ±30V | - | 204W (Tc) | 75 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 10A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存16,188 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4V @ 250µA | 57nC @ 10V | 2040pF @ 25V | ±30V | - | 192W (Tc) | 730 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
STMicroelectronics |
MOSFET N-CH 200V 30A TO-247
|
封装: TO-247-3 |
库存9,084 |
|
MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1597pF @ 25V | ±20V | - | 125W (Tc) | 75 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 500V 4.5A TO-220
|
封装: TO-220-3 |
库存60,156 |
|
MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 610pF @ 25V | ±20V | - | 100W (Tc) | 1.5 Ohm @ 2.7A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 20V 3.77A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存194,412 |
|
MOSFET (Metal Oxide) | 20V | 3.77A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 14nC @ 4.5V | - | ±12V | - | 750mW (Ta) | 33 mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 8V 24V SOT363 T&R
|
封装: 6-TSSOP, SC-88, SOT-363 |
库存5,552 |
|
MOSFET (Metal Oxide) | 12V | 3.8A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 13nC @ 4.5V | 1028pF @ 6V | ±8V | - | 660mW | 48 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-363 | 6-TSSOP, SC-88, SOT-363 |
||
Diodes Incorporated |
MOSFET N-CH 60V 0.4A DFN1212-3
|
封装: 3-UDFN |
库存7,312 |
|
MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 1.8V, 4V | 1V @ 250µA | 0.55nC @ 4.5V | 36pF @ 25V | ±20V | - | 500mW (Ta) | 2 Ohm @ 100mA, 4V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,352 |
|
MOSFET (Metal Oxide) | 60V | 38A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 28.5nC @ 10V | 900pF @ 25V | ±20V | - | 46W (Tc) | 17 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
封装: 8-PowerTDFN |
库存2,128 |
|
MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 7.5nC @ 4.5V | 750pF @ 25V | ±20V | - | 54W (Tc) | 8 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET N-CH 100V 42A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存12,132 |
|
MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 4V @ 250µA | 51nC @ 10V | 1800pF @ 25V | ±20V | - | 136W (Tc) | 28 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
PCH -20V -30A MIDDLE POWER MOSFE
|
封装: 8-PowerVDFN |
库存5,152 |
|
MOSFET (Metal Oxide) | 20V | 30A (Tc) | 4.5V | 1.2V @ 1mA | 60nC @ 4.5V | 4800pF @ 10V | ±8V | - | 20W (Tc) | 6.7 mOhm @ 15A, 4.5V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
||
Vishay Siliconix |
MOSFET N-CH 40V 16A 1212-8
|
封装: PowerPAK? 1212-8 |
库存101,898 |
|
MOSFET (Metal Oxide) | 40V | 16A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 35nC @ 10V | 1800pF @ 25V | ±20V | - | 62.5W (Tc) | 8 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Rohm Semiconductor |
MOSFET P-CH 30V 2A TUMT6
|
封装: 6-SMD, Flat Leads |
库存49,404 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | - | 3.9nC @ 5V | 350pF @ 10V | ±20V | - | 1W (Ta) | 120 mOhm @ 2A, 10V | - | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
||
Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC
|
封装: TO-247-3 |
库存6,624 |
|
MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2400pF @ 25V | ±20V | - | 190W (Tc) | 18 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存33,906 |
|
MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 4V @ 100µA | 86nC @ 10V | 2810pF @ 25V | ±20V | - | 140W (Tc) | 8.5 mOhm @ 51A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 650V 7A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存395,232 |
|
MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 690pF @ 100V | ±25V | - | 70W (Tc) | 600 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 100V 60A TO263
|
封装: - |
库存9,597 |
|
MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 4.5V @ 50µA | 49 nC @ 10 V | 2650 pF @ 25 V | ±20V | - | 176W (Tc) | 18mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 4A ITO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 3.8V @ 250µA | 17.2 nC @ 10 V | 582 pF @ 50 V | ±30V | - | 41.6W (Tc) | 2.2Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
YAGEO XSEMI |
MOSFET N-CH 600V 10A TO220CFM
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 4V @ 250µA | 59.2 nC @ 10 V | 2688 pF @ 100 V | ±30V | - | 1.92W (Ta), 36.7W (Tc) | 750mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220CFM | TO-220-3 Full Pack |
||
Diotec Semiconductor |
IC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 3A | 4.5V, 10V | 2.5V @ 250µA | 9.4 nC @ 10 V | 415 pF @ 20 V | ±20V | - | 1.25W | 72mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
SILICON CARBIDE MOSFET
|
封装: - |
库存6,000 |
|
SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V POWERDI506
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 3V @ 1mA | 68 nC @ 10 V | 3944 pF @ 15 V | ±20V | - | 2.3W (Ta), 83W (Tc) | 1.7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER SWITCHING MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
GENERAL SWITCHING POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 22.5A (Ta), 40A (Tc) | 4.5V, 10V | 3V @ 1mA | 44 nC @ 10 V | 2705 pF @ 13 V | ±20V | - | 2.3W (Ta), 52W (Tc) | 3.15mOhm @ 22.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3) | 8-PowerTDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 3.6A SOT23-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 12 nC @ 10 V | 200 pF @ 15 V | ±20V | - | 1.4W (Ta) | 50mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | 3-SMD, SOT-23-3 Variant |
||
onsemi |
SIC MOS TO247-4L 650V
|
封装: - |
库存1,350 |
|
SiCFET (Silicon Carbide) | 650 V | 47A (Tc) | 15V, 18V | 4.3V @ 6.5mA | 74 nC @ 18 V | 1473 pF @ 325 V | - | - | 176W (Tc) | 70mOhm @ 20A, 18V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |