图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 650V 3.2A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,312 |
|
MOSFET (Metal Oxide) | 650V | 3.2A (Tc) | 10V | 3.9V @ 135µA | 17nC @ 10V | 400pF @ 25V | ±20V | - | 38W (Tc) | 1.4 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 20V 8.6A 8-TSSOP
|
封装: 8-TSSOP (0.173", 4.40mm Width) |
库存5,440 |
|
MOSFET (Metal Oxide) | 20V | 8.6A (Tc) | 2.5V, 4.5V | 1.2V @ 250µA | 89nC @ 5V | 4300pF @ 15V | ±12V | - | 1.5W (Tc) | 15 mOhm @ 8.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 18A
|
封装: TO-251-3 Stub Leads, IPak |
库存6,336 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 33nC @ 10V | 1229pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251B | TO-251-3 Stub Leads, IPak |
||
ON Semiconductor |
MOSFET N-CH 200V 6A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,856 |
|
MOSFET (Metal Oxide) | 200V | 6A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 480pF @ 25V | ±20V | - | 1.75W (Ta), 50W (Tc) | 700 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 14A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存127,452 |
|
MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1155pF @ 25V | ±25V | - | 2.5W (Ta), 49W (Tc) | 140 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 7.3A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存467,064 |
|
MOSFET (Metal Oxide) | 30V | 7.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 22nC @ 10V | 830pF @ 15V | ±20V | - | 2.5W (Ta) | 28 mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 100V 1.3A 4-DIP
|
封装: 4-DIP (0.300", 7.62mm) |
库存168,360 |
|
MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±20V | - | 1.3W (Ta) | 270 mOhm @ 780mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Infineon Technologies |
MOSFET N-CH 60V BARE DIE
|
封装: Die |
库存4,960 |
|
MOSFET (Metal Oxide) | 60V | 3A (Tj) | 10V | 4V @ 196µA | - | - | - | - | - | 100 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO220-3
|
封装: TO-220-3 |
库存3,552 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 230nC @ 10V | 5660pF @ 25V | ±20V | - | 300W (Tc) | 4.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Texas Instruments |
MOSFET N-CH 40V 200A TO220-3
|
封装: TO-220-3 |
库存5,232 |
|
MOSFET (Metal Oxide) | 40V | 200A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 75nC @ 4.5V | 11400pF @ 20V | ±20V | - | 250W (Ta) | 1.7 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 75V 120A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,136 |
|
MOSFET (Metal Oxide) | 75V | 120A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 234nC @ 10V | 15450pF @ 25V | ±16V | - | 306W (Tc) | 4.2 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Rohm Semiconductor |
MOSFET N-CH 600V 2A CPT3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,120 |
|
MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | - | - | - | ±30V | - | 20W (Tc) | - | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET NCH 24V 14.1A UDFN2020
|
封装: 6-UDFN Exposed Pad |
库存4,048 |
|
MOSFET (Metal Oxide) | 24V | 14.1A (Ta) | 2.5V, 10V | 1.45V @ 250µA | 53.7nC @ 10V | 1683pF @ 15V | ±12V | - | 800mW (Ta), 12.5W (Tc) | 6 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存355,908 |
|
MOSFET (Metal Oxide) | 60V | 9.6A (Ta) | 6V, 10V | 4V @ 250µA | 57nC @ 10V | - | ±20V | - | 1.9W (Ta) | 11 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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IXYS |
MOSFET N-CH 100V 60A TO-220
|
封装: TO-220-3 |
库存68,568 |
|
MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 4.5V @ 50µA | 49nC @ 10V | 2650pF @ 25V | ±30V | - | 176W (Tc) | 18 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI506
|
封装: 8-PowerTDFN |
库存20,778 |
|
MOSFET (Metal Oxide) | 40V | 15.7A (Ta), 100A (Tc) | 10V | 4V @ 250µA | 41.9nC @ 10V | 2082pF @ 25V | ±20V | - | 2.8W (Ta), 136W (Tc) | 7.6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET P-CH 150V 1.4A 6-TSOP
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存162,780 |
|
MOSFET (Metal Oxide) | 150V | 1.4A (Tc) | 6V, 10V | 4V @ 250µA | 19nC @ 10V | 510pF @ 50V | ±20V | - | 2W (Ta), 3.2W (Tc) | 750 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
STMicroelectronics |
MOSFET N-CH 800V 10.5A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存13,698 |
|
MOSFET (Metal Oxide) | 800V | 10.5A (Tc) | 10V | 4.5V @ 100µA | 87nC @ 10V | 2620pF @ 25V | ±30V | - | 190W (Tc) | 750 mOhm @ 5.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 52 nC @ 10 V | 1650 pF @ 25 V | ±20V | - | 120W (Tc) | 11mOhm @ 75A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Renesas Electronics Corporation |
DISCRETE / POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
MOSLEADER |
Single N 30V 5.1A SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 3.5V @ 250µA | 31 nC @ 10 V | 630 pF @ 100 V | ±20V | - | 66W (Tc) | 520mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 950V 6A ITO220AB
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 5V @ 250µA | 20.3 nC @ 10 V | 1487 pF @ 25 V | ±30V | - | 40W (Tc) | 2.2Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 500 V
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 500 V | 38A (Tc) | 10V | 5V @ 250µA | 57 nC @ 10 V | 2300 pF @ 100 V | ±25V | - | 250W (Tc) | 71mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
1200V SILICON CARBIDE MOSFET
|
封装: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 6.3A (Tc) | 15V | 3.5V @ 1.2mA | 12 nC @ 15 V | 206 pF @ 800 V | +15V, -5V | - | 44W (Tc) | 675mOhm @ 1.2A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Panjit International Inc. |
40V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存8,925 |
|
MOSFET (Metal Oxide) | 40 V | 5.9A (Ta), 21A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 4.4 nC @ 4.5 V | 425 pF @ 25 V | ±20V | - | 2.4W (Ta), 30W (Tc) | 32mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET P-CH 30V 50A 8DFN
|
封装: - |
库存8,913 |
|
MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 64.2 nC @ 10 V | 2826 pF @ 15 V | ±25V | - | 1W (Ta) | 6.8mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | V-DFN3333-8 (Type B) | 8-PowerVDFN |
||
Rohm Semiconductor |
750V, 51A, 7-PIN SMD, TRENCH-STR
|
封装: - |
库存3,042 |
|
SiCFET (Silicon Carbide) | 750 V | 51A (Tj) | 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | 2320 pF @ 500 V | +21V, -4V | - | 150W | 34mOhm @ 29A, 18V | 175°C (TJ) | Surface Mount | TO-263-7L | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
IXYS |
MOSFET N-CH 150V 170A TO247
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 170A (Tc) | 10V | 4.5V @ 4mA | 122 nC @ 10 V | 7620 pF @ 25 V | ±20V | - | 520W (Tc) | 6.7mOhm @ 85A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 300V 56A TO220AB
|
封装: - |
库存1,212 |
|
MOSFET (Metal Oxide) | 300 V | 56A (Tc) | 10V | 4.5V @ 1.5mA | 56 nC @ 10 V | 3750 pF @ 25 V | ±20V | - | 320W (Tc) | 27mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |