图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 145A 2WDSON
|
封装: 3-WDSON |
库存4,544 |
|
MOSFET (Metal Oxide) | 30V | 27A (Ta), 145A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 72nC @ 10V | 4900pF @ 15V | ±20V | - | 2.8W (Ta), 78W (Tc) | 2.4 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
||
ON Semiconductor |
MOSFET N-CH 30V 10.2A SO-8FL
|
封装: 8-PowerTDFN, 5 Leads |
库存3,312 |
|
MOSFET (Metal Oxide) | 30V | 10.2A (Ta), 71A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 22nC @ 4.5V | 2040pF @ 12V | ±16V | - | 870mW (Ta), 42.4W (Tc) | 5.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 33A TO-220AB
|
封装: TO-220-3 |
库存399,588 |
|
MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 4V @ 250µA | 79nC @ 20V | 1220pF @ 25V | ±20V | - | 120W (Tc) | 40 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 250V 4A TO-220
|
封装: TO-220-3 |
库存133,164 |
|
MOSFET (Metal Oxide) | 250V | 4A (Tc) | 10V | 5V @ 250µA | 14nC @ 10V | 420pF @ 25V | ±30V | - | 75W (Tc) | 2.1 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 4.6A BGA
|
封装: 9-VFBGA |
库存825,804 |
|
MOSFET (Metal Oxide) | 20V | 4.6A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 11nC @ 4.5V | 754pF @ 10V | ±12V | - | 1.7W (Ta) | 46 mOhm @ 4.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 9-BGA (1.5x1.6) | 9-VFBGA |
||
Infineon Technologies |
MOSFET N-CH 650V TO247-4
|
封装: TO-247-4 |
库存2,656 |
|
MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 4V @ 2.92mA | 215nC @ 10V | 9900pF @ 400V | ±20V | - | 446W (Tc) | 19 mOhm @ 58.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,232 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | ±20V | - | 79W (Tc) | 8.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
IXYS |
MOSFET N-CH 200V 156A ISOPLUS247
|
封装: TO-247-3 |
库存2,976 |
|
MOSFET (Metal Oxide) | 200V | 156A (Tc) | 10V | 5V @ 8mA | 378nC @ 10V | 28000pF @ 25V | ±20V | - | 600W (Tc) | 8 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS247? | TO-247-3 |
||
IXYS |
MOSFET N-CH 500V 32A TO-268
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存5,088 |
|
MOSFET (Metal Oxide) | 500V | 32A (Tc) | 10V | 4V @ 4mA | 300nC @ 10V | 5700pF @ 25V | ±20V | - | 360W (Tc) | 150 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
IXYS |
MOSFET N-CH 200V 86A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存103,464 |
|
MOSFET (Metal Oxide) | 200V | 86A (Tc) | 10V | 5V @ 1mA | 90nC @ 10V | 4500pF @ 25V | ±30V | - | 480W (Tc) | 29 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 250V 44A TO-220
|
封装: TO-220-3 |
库存2,768 |
|
MOSFET (Metal Oxide) | 250V | 44A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET NCH 40V 12.9A POWERDI
|
封装: 8-PowerTDFN |
库存6,960 |
|
MOSFET (Metal Oxide) | 40V | 12.9A (Ta), 100A (Tc) | - | 4V @ 250µA | 25.5nC @ 10V | 1405pF @ 20V | - | - | 2.5W (Ta), 150W (Tc) | 10 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 650V 100A PLUS247
|
封装: TO-247-3 |
库存7,472 |
|
MOSFET (Metal Oxide) | 650V | 100A (Tc) | 10V | 5.5V @ 4mA | 180nC @ 10V | 11300pF @ 25V | ±30V | - | 1040W (Tc) | 30 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
Transphorm |
GAN FET 650V 20A PQFN88
|
封装: 3-PowerDFN |
库存10,308 |
|
GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 8V | 2.6V @ 300µA | 14nC @ 8V | 760pF @ 400V | ±18V | - | 96W (Tc) | 130 mOhm @ 13A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
封装: 8-PowerVDFN |
库存41,244 |
|
MOSFET (Metal Oxide) | 30V | 150A | 4.5V, 10V | 2.1V @ 500µA | 80nC @ 10V | 7540pF @ 15V | ±20V | - | 132W (Tc) | - | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N CH 60V 195A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存14,724 |
|
MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 3.7V @ 250µA | 411nC @ 10V | 13703pF @ 25V | ±20V | - | 375W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 900V 2.1A TO-220
|
封装: TO-220-3 |
库存322,908 |
|
MOSFET (Metal Oxide) | 900V | 2.1A (Tc) | 10V | 4.5V @ 50µA | 27nC @ 10V | 485pF @ 25V | ±30V | - | 70W (Tc) | 6.5 Ohm @ 1.05A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 14A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存336,588 |
|
MOSFET (Metal Oxide) | 40V | 14A (Ta), 42A (Tc) | 4.5V, 10V | 3V @ 250µA | 28nC @ 10V | 1640pF @ 20V | ±20V | - | 3.1W (Ta), 43W (Tc) | 9 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 25A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存849,996 |
|
MOSFET (Metal Oxide) | 55V | 25A (Tc) | 5V, 10V | 3V @ 250µA | 20nC @ 5V | 710pF @ 25V | ±16V | - | 57W (Tc) | 37 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 60V 240MA SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存920,976 |
|
MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | 21pF @ 5V | ±20V | - | 350mW (Ta) | 3 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK
|
封装: - |
库存5,550 |
|
MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 4V @ 250µA | 8.3 nC @ 10 V | 180 pF @ 25 V | ±20V | - | 2.5W (Ta), 25W (Tc) | 540mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Panjit International Inc. |
40V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 25 nC @ 4.5 V | 1258 pF @ 25 V | ±20V | - | 2.1W (Ta) | 5.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
FDS4P-CHANN1.SPECIFIPOWERTRENMOS
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 18A TO220SIS
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 4V @ 730µA | 29 nC @ 10 V | 1635 pF @ 300 V | ±30V | - | 40W (Tc) | 155mOhm @ 9A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 40V 130A PPAK SO-8
|
封装: - |
库存12,792 |
|
MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 10V | 3.5V @ 250µA | 36 nC @ 10 V | 1960 pF @ 25 V | ±20V | - | 148W (Tc) | 4.6mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
onsemi |
MOSFET N-CH 30V 21A/49A 8PQFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 21A (Ta), 49A (Tc) | 4.5V, 10V | 3V @ 1mA | 47 nC @ 10 V | 3000 pF @ 15 V | ±20V | - | 2.5W (Ta), 50W (Tc) | 3.5mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
Microchip Technology |
MOSFET N-CH 800V 13A TO247
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 13A (Tc) | - | 4V @ 1mA | 225 nC @ 10 V | 3700 pF @ 25 V | - | - | - | 650mOhm @ 500mA, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 40V 62.5A/100A PPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 62.5A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 194 nC @ 10 V | 8445 pF @ 20 V | +20V, -16V | - | 6.25W (Ta), 100W (Tc) | 1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Goford Semiconductor |
MOSFET N-CH 30V 28A DFN3*3-8L
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 30 V | 28A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 18 nC @ 10 V | 1077 pF @ 15 V | ±20V | - | 20W (Tc) | 10mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3.15x3.05) | 8-PowerVDFN |
||
Infineon Technologies |
SICFET N-CH 1.2KV 52A TO247-3
|
封装: - |
库存174 |
|
SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | 15V | 5.7V @ 10mA | 52 nC @ 15 V | 1900 pF @ 800 V | +20V, -10V | - | 228W (Tc) | 59mOhm @ 20A, 15V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |