图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 55V 20A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存6,880 |
|
MOSFET (Metal Oxide) | 55V | 20A (Tc) | 4.5V, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | ±20V | - | 79W (Tc) | 105 mOhm @ 3.4A, 10V | -40°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET P-CH 40V 2.5A 6-TSOP
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存2,528 |
|
MOSFET (Metal Oxide) | 40V | 2.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 21nC @ 10V | 680pF @ 25V | ±20V | - | 2W (Ta) | 198 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro6?(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V SOT23
|
封装: - |
库存3,584 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET P-CH 200V 0.38A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存72,000 |
|
MOSFET (Metal Oxide) | 200V | 380mA (Ta) | 6V, 10V | 4.5V @ 250µA | 12nC @ 10V | 510pF @ 25V | ±20V | - | 750mW (Ta) | 2.35 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
IXYS |
MOSFET N-CH 55V 200A ISOPLUS-220
|
封装: ISOPLUS220? |
库存7,904 |
|
MOSFET (Metal Oxide) | 55V | 200A (Tc) | 10V | 4V @ 2mA | 200nC @ 10V | - | ±20V | - | 300W (Tc) | 5.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8-SOP
|
封装: 8-SOIC (0.173", 4.40mm Width) |
库存2,368 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 56nC @ 10V | 2900pF @ 10V | ±20V | - | 1W (Ta) | 3.4 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 30V 13A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存7,920 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 10V | 3V @ 250µA | 170nC @ 10V | - | ±25V | - | 1.9W (Ta) | 6.8 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 250V 4A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,280 |
|
MOSFET (Metal Oxide) | 250V | 4A (Tc) | 10V | 5V @ 250µA | 14nC @ 10V | 420pF @ 25V | ±30V | - | 3.13W (Ta), 75W (Tc) | 2.1 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 600V 58A SOT-227
|
封装: SOT-227-4, miniBLOC |
库存7,760 |
|
MOSFET (Metal Oxide) | 600V | 58A | 10V | 5V @ 5mA | 195nC @ 10V | 8930pF @ 25V | ±30V | - | 595W (Tc) | 75 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 1KV 3.5A ISOPLUS247
|
封装: ISOPLUS247? |
库存2,528 |
|
MOSFET (Metal Oxide) | 1000V | 3.5A (Tc) | 10V | 5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | ±20V | - | 80W (Tc) | 3 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
Vishay Siliconix |
MOSFET N-CH 500V 5.3A TO251 IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存2,672 |
|
MOSFET (Metal Oxide) | 500V | 5.3A (Tc) | 10V | 5V @ 250µA | 20nC @ 10V | 325pF @ 100V | ±30V | - | 104W (Tc) | 1.5 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Rohm Semiconductor |
MOSFET N-CH 600V 20A LPT
|
封装: SC-83 |
库存7,408 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 1mA | 60nC @ 10V | 2350pF @ 25V | ±30V | - | 50W (Tc) | 280 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | LPTS | SC-83 |
||
Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存6,608 |
|
MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | ±20V | - | 214W (Tc) | 4.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 45V 150A
|
封装: 8-PowerVDFN |
库存6,512 |
|
MOSFET (Metal Oxide) | 45V | 150A (Tc) | 4.5V, 10V | 2.4V @ 1mA | 99nC @ 10V | 9600pF @ 22.5V | ±20V | - | 960mW (Ta), 170W (Tc) | 1.04 mOhm @ 50A, 10V | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET N-CH 60V 13.5A
|
封装: 8-PowerTDFN |
库存3,312 |
|
MOSFET (Metal Oxide) | 60V | 13.5A (Ta), 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 41.3nC @ 10V | 2090pF @ 30V | ±20V | - | 2.6W (Ta), 136W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存23,982 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 2.5V @ 250µA | 110nC @ 5V | 4050pF @ 25V | ±15V | - | 300W (Tc) | 8 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Renesas Electronics Corporation |
ABU / MOSFET
|
封装: - |
库存22,203 |
|
MOSFET (Metal Oxide) | 40 V | 15A (Tc) | 2.5V, 4.5V | 1.5V @ 1mA | 16 nC @ 4.5 V | 1400 pF @ 10 V | ±12V | - | 1W (Ta), 25W (Tc) | 40mOhm @ 7.5A, 4.5V | 150°C | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Taiwan Semiconductor Corporation |
30V, 70A, SINGLE N-CHANNEL POWER
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 11.1 nC @ 4.5 V | 1160 pF @ 25 V | ±20V | - | 54W (Tc) | 6mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
UMW |
TO-252 N-CHANNEL POWER MOSFET
|
封装: - |
库存7,497 |
|
MOSFET (Metal Oxide) | 650 V | 2A (Tj) | 10V | 4V @ 250µA | 14.5 nC @ 10 V | 311 pF @ 25 V | ±30V | - | - | 5.5Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 40V 100A TO252 REV
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.5V @ 250µA | 130 nC @ 10 V | 8000 pF @ 25 V | ±20V | - | 107W (Tc) | 2.33mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) Reverse Lead | TO-252-4, DPAK (3 Leads + Tab) |
||
IXYS |
MOSFET N-CH 250V 50A TO263
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 50A (Tc) | 10V | 5V @ 1mA | 78 nC @ 10 V | 4000 pF @ 25 V | ±30V | - | 400W (Tc) | 50mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Sanken Electric USA Inc. |
LOW RON MOSFET 100V/20A/0.033
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 20A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 45 nC @ 10 V | 2200 pF @ 10 V | ±20V | - | 55W (Tc) | 12.5mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Rohm Semiconductor |
HIGH-SPEED SWITCHING, NCH 650V 7
|
封装: - |
库存7,434 |
|
MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 5V @ 200µA | 14.5 nC @ 10 V | 470 pF @ 25 V | ±20V | - | 78W (Tc) | 665mOhm @ 2.4A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 600V TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 26A (Tc) | - | - | - | - | ±25V | - | - | - | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
650V DTMOS6-HIGH SPEED DIODE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 29A (Ta) | 10V | 4.5V @ 1.27mA | 50 nC @ 10 V | 2880 pF @ 300 V | ±30V | - | 230W (Tc) | 95mOhm @ 14.5A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 651V~800V TO252 T&
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 7.6A (Tc) | 10V | 5V @ 250µA | 17.4 nC @ 10 V | 570 pF @ 25 V | ±30V | - | 90W (Tc) | 600mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 30V 24A PPAK1212-8
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 44 nC @ 10 V | 1515 pF @ 15 V | ±20V | - | 28W (Tc) | 8.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
||
Infineon Technologies |
MOSFET N-CH 150V 32A TSDSON
|
封装: - |
库存8,388 |
|
MOSFET (Metal Oxide) | 150 V | 32A (Tc) | 8V, 10V | 4.6V @ 32µA | 13 nC @ 10 V | 950 pF @ 75 V | ±20V | - | 62.5W (Tc) | 30mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |