图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 85V 35A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,704 |
|
MOSFET (Metal Oxide) | 85V | 35A (Tc) | 10V | 4V @ 39µA | 31nC @ 10V | 2070pF @ 40V | ±20V | - | 71W (Tc) | 26 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 22A TO-220AB
|
封装: TO-220-3 |
库存2,016 |
|
MOSFET (Metal Oxide) | 100V | 22A (Tc) | 4.5V | 2.5V @ 1mA | - | 1500pF @ 25V | ±10V | - | 95W (Tc) | 100 mOhm @ 9.5A, 4.5V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 12V 10A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存444,384 |
|
MOSFET (Metal Oxide) | 12V | 10A (Ta) | 1.8V, 4.5V | 900mV @ 600µA | 165nC @ 5V | - | ±8V | - | 1.5W (Ta) | 6.5 mOhm @ 14A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET N-CH 250V 0.23A SOT23-6
|
封装: SOT-23-6 |
库存7,888 |
|
MOSFET (Metal Oxide) | 250V | 230mA (Ta) | 2.4V, 10V | 1.8V @ 1mA | 3.65nC @ 10V | 72pF @ 25V | ±40V | - | 1.1W (Ta) | 8.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
||
STMicroelectronics |
MOSFET N-CH 600V 7A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存14,820 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 4.5V @ 100µA | 53nC @ 10V | 1110pF @ 25V | ±30V | - | 125W (Tc) | 950 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 57A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,232 |
|
MOSFET (Metal Oxide) | 55V | 57A (Tc) | 10V | 4V @ 1mA | - | 2000pF @ 25V | ±16V | - | 125W (Tc) | 18 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 20A DPAK-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,168 |
|
MOSFET (Metal Oxide) | 40V | 20A (Ta) | 6V, 10V | 3V @ 1mA | 18nC @ 10V | 820pF @ 10V | ±20V | - | 38W (Tc) | 14 mOhm @ 10A, 10V | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,000 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 516pF @ 100V | ±30V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET P-CH 15V 1.27A 8-TSSOP
|
封装: 8-TSSOP (0.173", 4.40mm Width) |
库存4,656 |
|
MOSFET (Metal Oxide) | 15V | 1.27A (Ta) | 2.7V, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | +2V, -15V | - | 504mW (Ta) | 180 mOhm @ 1.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 20V 60A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,056 |
|
MOSFET (Metal Oxide) | 20V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 50nC @ 4.5V | 5950pF @ 10V | ±20V | - | 3.75W (Ta), 120W (Tc) | 3.9 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 500V 17A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存12,420 |
|
MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 4V @ 250µA | 45nC @ 10V | 1330pF @ 50V | ±25V | - | 125W (Tc) | 190 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存48,576 |
|
MOSFET (Metal Oxide) | 40V | 58A (Tc) | 4.5V, 10V | 3V @ 250µA | 77nC @ 10V | 3540pF @ 20V | ±20V | - | 4.6W (Ta), 46W (Tc) | 7.5 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Infineon Technologies |
MOSFET N-CH 25V 40A 8TDSON IND
|
封装: 8-PowerTDFN |
库存52,188 |
|
MOSFET (Metal Oxide) | 25V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 49nC @ 10V | 3200pF @ 12V | ±16V | - | 2.5W (Ta), 74W (Tc) | 0.95 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 9.5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存364,908 |
|
MOSFET (Metal Oxide) | 30V | 9.5A (Ta), 30A (Tc) | 4.5V, 10V | 3V @ 250µA | 9.4nC @ 5V | 660pF @ 15V | ±20V | - | 2.8W (Ta), 36W (Tc) | 20 mOhm @ 9.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Comchip Technology |
MOSFET N-CH 40V 100A DFN5X6
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | - | 2.5V @ 250µA | 44.4 nC @ 4.5 V | 4940 pF @ 25 V | ±20V | - | 2W (Ta), 135W (Tc) | 2.8mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5x6 (PR-PAK) | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 600V DPAK
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 55V 110A D2PAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 55 V | 110A (Tc) | - | 3V @ 250µA | 100 nC @ 10 V | 3300 pF @ 25 V | - | - | - | 6mOhm @ 30A, 10V | - | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Goford Semiconductor |
MOSFET N-CH 650V 70A TO-247
|
封装: - |
库存90 |
|
MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 10V | 5V @ 250µA | 160 nC @ 10 V | 7650 pF @ 380 V | ±30V | - | 500W (Tc) | 41mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Goford Semiconductor |
P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6
|
封装: - |
库存50,673 |
|
MOSFET (Metal Oxide) | 20 V | 4A (Tc) | 2.5V, 4.5V | 1.1V @ 250µA | 12 nC @ 4.5 V | 950 pF @ 10 V | ±10V | - | 1.4W (Tc) | 45mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Renesas Electronics Corporation |
MOSFET N-CH 20V 5A 6WSOF
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 5A (Ta) | - | 1.5V @ 1mA | 3.3 nC @ 4 V | 270 pF @ 10 V | - | - | 200mW (Ta) | 50mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | 6-WSOF | 6-SMD, Flat Leads |
||
onsemi |
MOSFET N-CHAN 9A 60V DPAK STR
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
ISK018NE1LM7AULA1 MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 15 V | 30A (Ta), 129A (Tc) | 4.5V, 7V | 2V @ 106µA | 13.6 nC @ 7 V | 1600 pF @ 7.5 V | ±7V | - | 2.1W (Ta), 39W (Tc) | 1.8mOhm @ 20A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | PG-VSON-6-1 | 6-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
|
封装: - |
库存7,500 |
|
MOSFET (Metal Oxide) | 40 V | 69A (Tc) | 4.5V, 10V | 3V @ 250µA | 87 nC @ 20 V | 4763 pF @ 20 V | ±20V | - | 1.5W (Ta) | 13mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Toshiba Semiconductor and Storage |
UMOS10 TO-220AB 80V 2.4MOHM
|
封装: - |
库存528 |
|
MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 3.5V @ 2.2mA | 178 nC @ 10 V | 13000 pF @ 40 V | ±20V | - | 300W (Tc) | 2.44mOhm @ 50A, 10V | 175°C | Through Hole | TO-220 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 40V 6.5A 8SOIC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 6.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 14.2 nC @ 10 V | 657 pF @ 20 V | ±20V | - | 3.1W (Ta) | 42mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
300 MA CMOS LDO, AD OPTION, VOUT
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 20.00A, 50
|
封装: - |
库存2,745 |
|
MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 3.9V @ 250µA | 49.5 nC @ 10 V | 2687 pF @ 25 V | ±30V | - | 252W (Ta) | 190mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 84A (Ta) | 4.5V, 10V | 3V @ 250µA | 60 nC @ 5 V | 5324 pF @ 15 V | ±16V | - | 93W (Tc) | 6mOhm @ 42A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
|
封装: - |
库存6,000 |
|
MOSFET (Metal Oxide) | 40 V | 16.3A (Ta), 67.2A (Tc) | 10V | 4V @ 250µA | 14.8 nC @ 10 V | 1315 pF @ 20 V | ±20V | - | 3.2W (Ta), 54.5W (Tc) | 7.4mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V X1-DFN1006
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 810mA (Ta) | 4.5V, 10V | 2.6V @ 250µA | 0.36 nC @ 4.5 V | 19 pF @ 15 V | ±20V | - | 530mW (Ta) | 900mOhm @ 420mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1006-3 | 3-UFDFN |