图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
MOSFET P-CH 100V 18A TO-267AB
|
封装: TO-267AB |
库存3,808 |
|
MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | - | ±20V | - | 4W (Ta), 125W (Tc) | 220 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
||
ON Semiconductor |
MOSFET N-CH 40V 16.5A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,352 |
|
MOSFET (Metal Oxide) | 40V | 16.5A (Ta), 116A (Tc) | 5V, 10V | 3.5V @ 250µA | 88nC @ 10V | 4000pF @ 32V | ±20V | - | 3W (Ta), 150W (Tc) | 5.8 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 64A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,416 |
|
MOSFET (Metal Oxide) | 60V | 64A (Tc) | 10V | 4V @ 250µA | 117nC @ 20V | 1550pF @ 25V | ±20V | - | 150W (Tc) | 16 mOhm @ 64A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存31,752 |
|
MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | ±20V | - | 3.1W (Ta), 74W (Tc) | 2.2 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
IXYS |
MOSFET N-CH 1200V 2.4A TO-220
|
封装: TO-220-3 |
库存2,480 |
|
MOSFET (Metal Oxide) | 1200V | 2.4A (Tc) | 10V | 4.5V @ 250µA | 37nC @ 10V | 1207pF @ 25V | ±20V | - | 125W (Tc) | 7.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET P-CH 20V SC-74
|
封装: SC-74, SOT-457 |
库存4,384 |
|
MOSFET (Metal Oxide) | 20V | 5.7A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 31nC @ 4.5V | 2340pF @ 10V | ±8V | - | 540mW (Ta), 6.25W (Tc) | 32 mOhm @ 2.4A, 4.5V | -55°C ~ 150°C (TJ) | - | 6-TSOP | SC-74, SOT-457 |
||
Diodes Incorporated |
MOSFET P-CH 20V 3A SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存2,640 |
|
MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 5.5nC @ 4.5V | 476pF @ 10V | ±8V | - | 1.5W (Ta) | 120 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET P-CH 40V 60A SO-8
|
封装: PowerPAK? SO-8 |
库存3,632 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 260nC @ 10V | 11000pF @ 25V | ±20V | - | 68W (Tc) | 7 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Vishay Siliconix |
MOSFET N-CH 650V 24A TO220AB
|
封装: TO-220-3 |
库存5,552 |
|
MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 4V @ 250µA | 122nC @ 10V | 2740pF @ 100V | ±30V | - | 250W (Tc) | 145 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 80A TO220-3
|
封装: TO-220-3 |
库存4,704 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 4.5V, 10V | 2V @ 250µA | 233nC @ 10V | 5400pF @ 25V | ±20V | - | 300W (Tc) | 7.1 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Microchip Technology |
MOSFET P-CH 400V 0.086A TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存15,528 |
|
MOSFET (Metal Oxide) | 400V | 86mA (Tj) | 4.5V, 10V | 2.4V @ 1mA | - | 125pF @ 25V | ±20V | - | 740mW (Ta) | 25 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 50A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存510,000 |
|
MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 52nC @ 10V | 1970pF @ 20V | ±20V | - | 65W (Tc) | 8.5 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET P-CH 100V 1.5A TSMT
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存7,920 |
|
MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 322nC @ 10V | 950pF @ 25V | ±20V | - | 600mW (Ta) | 470 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存49,146 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 2V @ 1mA | 95.6nC @ 5V | 7665pF @ 25V | ±15V | - | 300W (Tc) | 3.7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET P-CH 60V 8A U8FL
|
封装: 8-PowerWDFN |
库存29,310 |
|
MOSFET (Metal Oxide) | 60V | 2.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 6nC @ 10V | 250pF @ 25V | ±20V | - | 3W (Ta), 18W (Tc) | 260 mOhm @ 3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
ON Semiconductor |
MOSFET N-CH 100V 40A ATPAK
|
封装: ATPAK (2 leads+tab) |
库存49,920 |
|
MOSFET (Metal Oxide) | 100V | 40A (Ta) | 10V | - | 68nC @ 10V | 4000pF @ 20V | ±20V | - | 70W (Tc) | 33 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 11.5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存169,440 |
|
MOSFET (Metal Oxide) | 60V | 11.5A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 65nC @ 10V | 3215pF @ 30V | ±20V | - | 3.1W (Ta), 69W (Tc) | 12.3 mOhm @ 10.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET P-CH 20V 2.6A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存108,000 |
|
MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 2.5V, 4.5V | 1.25V @ 250µA | 5.3nC @ 4.5V | 250pF @ 10V | ±12V | - | 1.08W (Ta) | 110 mOhm @ 2.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Alpha & Omega Semiconductor Inc. |
N
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 18A (Ta), 50A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 48 nC @ 10 V | 2420 pF @ 40 V | ±20V | - | 4.1W (Ta), 54W (Tc) | 6.6mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
||
Infineon Technologies |
TRENCH <= 40V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 11A (Ta), 40A (Tc) | 10V | 4V @ 14µA | 17 nC @ 10 V | 1300 pF @ 20 V | ±20V | - | 2.1W (Ta), 35W (Tc) | 10.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-1 | 8-PowerVDFN |
||
onsemi |
POWER MOSFET, 60 V, 3.7 M?, 127A
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 22A (Ta), 127A (Tc) | 10V, 12V | 4V @ 122µA | 39 nC @ 10 V | 2430 pF @ 30 V | ±20V | - | 3.7W (Ta), 115W (Tc) | 3.7mOhm @ 24A, 12V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-7, D2PAK (6 Leads + Tab) |
||
Qorvo |
1200V/53MOHM, SIC, FAST CASCODE,
|
封装: - |
库存1,560 |
|
SiCFET (Cascode SiCJFET) | 1200 V | 34A (Tc) | 12V | 6V @ 10mA | 37.8 nC @ 15 V | 1370 pF @ 800 V | ±20V | - | 263W (Tc) | 67mOhm @ 20A, 12V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH 650V 21A TO247-3-41
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 4.5V @ 490µA | 41 nC @ 10 V | 1950 pF @ 400 V | ±20V | - | 114W (Tc) | 115mOhm @ 9.7A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 160A LFPAK56
|
封装: - |
库存17,727 |
|
MOSFET (Metal Oxide) | 40 V | 160A (Ta) | 10V | 3.6V @ 1mA | 62 nC @ 10 V | 4507 pF @ 20 V | ±20V | Schottky Diode (Body) | 147W (Ta) | 2.8mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
STMicroelectronics |
POWER TRANSISTORS
|
封装: - |
库存90 |
|
MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 4.75V @ 250µA | 55 nC @ 10 V | 2350 pF @ 100 V | ±25V | - | 250W (Tc) | 80mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 (I2PAK) | TO-262-3 Long Leads, I2PAK, TO-262AA |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 9.5A (Tc) | 10V | 4V @ 1mA | - | 530 pF @ 25 V | ±20V | - | 75W (Tc) | 400mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V 210MA SOT23-3
|
封装: - |
库存105,993 |
|
MOSFET (Metal Oxide) | 60 V | 210mA (Ta) | 5V, 10V | 2.5V @ 250µA | 0.821 nC @ 10 V | 22 pF @ 25 V | ±40V | - | 570mW (Ta) | 5Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 360A TO263-7
|
封装: - |
库存6,351 |
|
MOSFET (Metal Oxide) | 60 V | 360A (Tc) | 6V, 10V | 3.7V @ 250µA | 388 nC @ 10 V | 16000 pF @ 30 V | ±20V | - | 2.4W (Ta), 417W (Tc) | 1.3mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2PAK (6 Leads + Tab) |
||
Vishay Siliconix |
MOSFET N-CH 600V 29A PPAK 8 X 8
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 5V @ 250µA | 129 nC @ 10 V | 2614 pF @ 100 V | ±30V | - | 202W (Tc) | 98mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
||
Microchip Technology |
MOSFET N-CH 1000V 18A D3PAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1000 V | 18A (Tc) | 10V | 5V @ 1mA | 150 nC @ 10 V | 4845 pF @ 25 V | ±30V | - | 625W (Tc) | 700mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |