图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 150V 50A TO220-3
|
封装: TO-220-3 |
库存2,608 |
|
MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | ±20V | - | 150W (Tc) | 20 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 180A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存37,668 |
|
MOSFET (Metal Oxide) | 75V | 180A (Tc) | 10V | 4V @ 250µA | 260nC @ 10V | 7600pF @ 50V | ±20V | - | 330W (Tc) | 4.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 30V 62A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存390,240 |
|
MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 1990pF @ 15V | ±20V | - | 87W (Tc) | 12.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 500V 16A
|
封装: TO-220-3 Full Pack |
库存6,352 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | - | 46.6nC @ 10V | 1200pF @ 30V | ±30V | - | 2W (Ta), 40W (Tc) | 430 mOhm @ 8A, 10V | 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 9A TO-220
|
封装: TO-220-3 |
库存5,920 |
|
MOSFET (Metal Oxide) | 200V | 9A (Tc) | 5V | 2V @ 250µA | 27nC @ 5V | 755pF @ 25V | ±20V | - | 69W (Tc) | 400 mOhm @ 4.5A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
ON Semiconductor |
MOSFET P-CH 20V 8.8A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存423,420 |
|
MOSFET (Metal Oxide) | 20V | 8.8A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 70nC @ 4.5V | 3640pF @ 16V | ±12V | - | 1.6W (Ta) | 14 mOhm @ 10A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N CH 150V 99A TO262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,200 |
|
MOSFET (Metal Oxide) | 150V | 99A (Tc) | 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | ±20V | - | 375W (Tc) | 12.1 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
封装: TO-220-3 |
库存3,232 |
|
MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | ±30V | - | 38.7W (Tc) | 4 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8L
|
封装: PowerPAK? SO-8 |
库存5,520 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 150nC @ 20V | 7150pF @ 20V | +20V, -16V | - | 48W (Tc) | 1.7 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Infineon Technologies |
MOSFET N-CH 100V 97A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存14,856 |
|
MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | ±20V | - | 230W (Tc) | 9 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 56A TO247
|
封装: TO-247-3 |
库存10,248 |
|
MOSFET (Metal Oxide) | 800V | 56A (Tc) | 10V | 4.5V @ 5.8mA | 350nC @ 10V | 14685pF @ 100V | ±20V | Super Junction | 500W (Tc) | 60 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 40V 270A POWERSO-10
|
封装: PowerSO-10 Exposed Bottom Pad |
库存77,532 |
|
MOSFET (Metal Oxide) | 40V | 270A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 7500pF @ 25V | ±20V | - | 300W (Tc) | 1.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 10-PowerSO | PowerSO-10 Exposed Bottom Pad |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 22A TO-3PN
|
封装: TO-3P-3, SC-65-3 |
库存6,656 |
|
MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 4V @ 250µA | 45nC @ 10V | 1950pF @ 100V | ±30V | - | 205W (Tc) | 165 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET P-CH 60V 2.5A SSOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存3,632 |
|
MOSFET (Metal Oxide) | 60V | 2.8A (Tc) | 10V | 2.5V @ 250µA | 12nC @ 10V | 550pF @ 30V | ±20V | - | 2W (Tc) | 177 mOhm @ 2.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | - | TO-236-3, SC-59, SOT-23-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 120A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存32,802 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4V @ 1mA | 170nC @ 10V | 9900pF @ 50V | ±20V | - | 338W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Texas Instruments |
MOSFET N-CH 60V 100A 8SON
|
封装: 8-PowerTDFN |
库存15,360 |
|
MOSFET (Metal Oxide) | 60V | 17A (Ta), 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 36nC @ 10V | 2750pF @ 30V | ±20V | - | 3.2W (Ta), 116W (Tc) | 5.9 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存40,740 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 2V @ 80µA | 69nC @ 10V | 1800pF @ 25V | ±20V | - | 136W (Tc) | 13 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 25V 5.8A SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存1,650,780 |
|
MOSFET (Metal Oxide) | 25V | 5.8A (Ta) | 4.5V, 10V | 2.35V @ 10µA | 5.4nC @ 10V | 430pF @ 10V | ±20V | - | 1.25W (Ta) | 24 mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 21A 8DFN
|
封装: 8-PowerSMD, Flat Leads |
库存231,900 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta), 34A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 45nC @ 10V | 1540pF @ 15V | ±20V | - | 3.1W (Ta), 31W (Tc) | 4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
||
Taiwan Semiconductor Corporation |
40V, 100A, SINGLE N-CHANNEL POWE
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 40 V | 26A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 95 nC @ 10 V | 6228 pF @ 25 V | ±16V | - | 136W (Tc) | 2.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PDFNU (4.9x5.75) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 110A PLUS220
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microchip Technology |
MOSFET N-CH 500V 26A D3PAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 4V @ 1mA | 225 nC @ 10 V | 4440 pF @ 25 V | ±30V | - | 300W (Tc) | 200mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
||
Diodes Incorporated |
2N7002 FAMILY SOT23 T&R 3K
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 60 V | 380mA (Ta) | 5V, 10V | 2.5V @ 1mA | 0.3 nC @ 4.5 V | 50 pF @ 25 V | ±20V | - | 370mW (Ta) | 2Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Panjit International Inc. |
700V N-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 6A (Ta) | 10V | 4V @ 250µA | 16.5 nC @ 10 V | 831 pF @ 25 V | ±30V | - | 128W (Tc) | 1.7Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -4.7A, -20
|
封装: - |
库存17,850 |
|
MOSFET (Metal Oxide) | 20 V | 4.7A (Tc) | 1.8V, 4.5V | - | 13 nC @ 4.5 V | 1230 pF @ 10 V | ±10V | - | 1.56W (Tc) | 50mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 21A (Ta), 115A (Tc) | 10V | 4V @ 250µA | 66 nC @ 10 V | 4327 pF @ 50 V | ±20V | - | 4.7W (Ta), 136W (Tc) | 4.9mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
MOSFET N-CH 30V 11A 8SOP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 11A (Ta) | - | - | 6.8 nC @ 4.5 V | 1010 pF @ 10 V | - | - | - | 11.7mOhm @ 5.5A, 10V | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
MOSFET P-CH 30V 3A TSMT6
|
封装: - |
库存4,011 |
|
MOSFET (Metal Oxide) | 30 V | 3A (Ta) | 4V, 10V | 2.5V @ 1mA | 6 nC @ 5 V | 440 pF @ 10 V | ±20V | - | 950mW (Ta) | 80mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V SO-8 T&R 2
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 7.2A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 45 nC @ 10 V | 2083 pF @ 20 V | ±20V | - | 1.5W (Ta) | 25mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |