图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 50A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,336 |
|
MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 870pF @ 10V | ±20V | - | 45W (Tc) | 11 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 75V 97A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存391,836 |
|
MOSFET (Metal Oxide) | 75V | 97A (Tc) | 10V | 4V @ 100µA | 130nC @ 10V | 3540pF @ 50V | ±20V | - | 190W (Tc) | 8.8 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 31A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存15,960 |
|
MOSFET (Metal Oxide) | 100V | 31A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | ±20V | - | 3W (Ta), 110W (Tc) | 39 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,672 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta), 70A (Tc) | 10V, 20V | 3.5V @ 250µA | 61nC @ 10V | 3500pF @ 15V | ±25V | - | 2.5W (Ta), 90W (Tc) | 6.2 mOhm @ 20A, 20V | -55°C ~ 155°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 600V 5.4A TO220ABFP
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存2,752 |
|
MOSFET (Metal Oxide) | 600V | 5.4A (Tc) | 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | ±20V | Super Junction | - | 385 mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220ABFP | TO-220-3 Full Pack, Isolated Tab |
||
IXYS |
MOSFET N-CH 55V 100A I4-PAC-5
|
封装: i4-Pac?-5 |
库存3,920 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 1mA | 100nC @ 10V | - | ±20V | - | - | 7.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS i4-PAC? | i4-Pac?-5 |
||
ON Semiconductor |
MOSFET P-CH 20V 2.3A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,408 |
|
MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | - | - | 18nC @ 4.5V | 750pF @ 16V | - | Schottky Diode (Isolated) | - | 90 mOhm @ 2.4A, 4.5V | - | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存86,304 |
|
MOSFET (Metal Oxide) | 200V | 9A (Tc) | 4V, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | ±10V | - | 3.1W (Ta), 74W (Tc) | 400 mOhm @ 5.4A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 56A 5X6 PQFN
|
封装: 8-PowerTDFN |
库存6,432 |
|
MOSFET (Metal Oxide) | 30V | 17A (Ta), 56A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 20nC @ 10V | 1450pF @ 25V | ±20V | - | 3.3W (Ta), 35W (Tc) | 6.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
||
IXYS |
MOSFET P-CH 200V 106A SOT-227
|
封装: SOT-227-4, miniBLOC |
库存5,696 |
|
MOSFET (Metal Oxide) | 200V | 106A | 10V | 4.5V @ 250µA | 740nC @ 10V | 73000pF @ 25V | ±15V | - | 830W (Tc) | 30 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存5,360 |
|
MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 1921pF @ 25V | ±30V | - | 40.3W (Tc) | 1.05 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 1.4A SSOT-6
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存158,280 |
|
MOSFET (Metal Oxide) | 150V | 1.4A (Ta) | 6V, 10V | 4V @ 250µA | 11nC @ 10V | 344pF @ 75V | ±20V | - | 1.6W (Ta) | 425 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
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STMicroelectronics |
MOSFET N-CH 650V 22A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存20,316 |
|
MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 5V @ 250µA | 64nC @ 10V | 2880pF @ 100V | ±25V | - | 140W (Tc) | 139 mOhm @ 11A, 10V | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 100V 8.7A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存390,900 |
|
MOSFET (Metal Oxide) | 100V | 8.7A (Tc) | 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | ±20V | - | 35W (Tc) | 190 mOhm @ 5.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 1200V 12A TO247
|
封装: TO-247-3 |
库存3,952 |
|
MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 5V @ 100µA | 44.2nC @ 10V | 1370pF @ 100V | ±30V | - | 250W (Tc) | 690 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
650V 30A TO-220FM, HIGH-SPEED SW
|
封装: - |
库存2,652 |
|
MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 5V @ 960µA | 56 nC @ 10 V | 2350 pF @ 25 V | ±20V | - | 86W (Tc) | 140mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
||
IceMOS Technology |
Superjunction MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 730 V | 15A (Tc) | 10V | 3.5V @ 250µA | 75 nC @ 10 V | 2816 pF @ 100 V | ±20V | - | 208W (Tc) | 350mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Micro Commercial Co |
MOSFET N-CH ENH FET 200VDS 30VGS
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 3V @ 250µA | 17.7 nC @ 10 V | 836 pF @ 25 V | ±30V | - | 65.8W | 160mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247-4L 1
|
封装: - |
库存360 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 100A (Tc) | 18V | 5V @ 11.7mA | 158 nC @ 18 V | 6000 pF @ 800 V | +25V, -10V | - | 431W (Tc) | 21mOhm @ 50A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT323 T&R
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 20 V | 900mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.6 nC @ 4.5 V | 42 pF @ 16 V | ±6V | - | 470mW (Ta) | 450mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT523 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 870mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.6 nC @ 4.5 V | 42 pF @ 16 V | ±6V | - | 320mW (Ta) | 450mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
Harris Corporation |
14A, 100V, 0.16OHM, N-CHANNEL PO
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET N-CH 800V 13A TO220-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 3.8V @ 300µA | 25.3 nC @ 10 V | 1143 pF @ 400 V | ±20V | - | 96W (Tc) | 360mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
AECQ MOSFET PCH 20V 3.9A SOT23
|
封装: - |
库存16,590 |
|
MOSFET (Metal Oxide) | 20 V | 3.9A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 290 pF @ 10 V | +6V, -8V | - | 1W (Ta) | 93mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
||
Sanyo |
MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
T6 40V N-CH LL IN LFPAK33
|
封装: - |
库存8,847 |
|
MOSFET (Metal Oxide) | 40 V | 20A (Ta), 84A (Tc) | 4.5V, 10V | 2V @ 50µA | 25 nC @ 10 V | 1600 pF @ 25 V | ±20V | - | 3.2W (Ta), 55W (Tc) | 4.3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
||
Vishay Siliconix |
MOSFET N-CH 400V 10A TO220AB
|
封装: - |
库存4,959 |
|
MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 4V @ 250µA | 36 nC @ 10 V | 1030 pF @ 25 V | ±30V | - | 125W (Tc) | 550mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Harris Corporation |
MOSFET 2N-CH 25V 0.03A TO72
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | 30mA | - | - | - | - | - | - | - | - | - | Through Hole | TO-72 | TO-206AF, TO-72-4 Metal Can |
||
Vishay Siliconix |
P-CHANNEL 20-V (D-S) 175C MOSFET
|
封装: - |
库存25,956 |
|
MOSFET (Metal Oxide) | 20 V | 8A (Tc) | 4.5V, 10V | 2.5V @ 25µA | 27 nC @ 10 V | 1020 pF @ 10 V | ±20V | - | 5W (Tc) | 36mOhm @ 6.7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 580mA (Ta) | 4.5V, 10V | 2.6V @ 250µA | 0.36 nC @ 4.5 V | 19 pF @ 15 V | ±20V | - | 430mW (Ta) | 900mOhm @ 420mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |