页 8 - 晶体管 - FET，MOSFET - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 射频

记录 3,855
页  8/129
图片
零件编号
制造商
描述
封装
库存
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA092201F V1
Infineon Technologies

IC FET RF LDMOS 220W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.85A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
封装: 2-Flatpack, Fin Leads, Flanged
库存7,600
960MHz
18.5dB
30V
10µA
-
1.85A
220W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
BLF6G10S-45K,112
Ampleon USA Inc.

RF FET LDMOS 65V 23DB SOT608B

  • Transistor Type: LDMOS
  • Frequency: 922.5MHz ~ 957.5MHz
  • Gain: 23dB
  • Voltage - Test: 28V
  • Current Rating: 13A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 1W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608B
  • Supplier Device Package: SOT-608B
封装: SOT-608B
库存5,200
922.5MHz ~ 957.5MHz
23dB
28V
13A
-
350mA
1W
65V
SOT-608B
SOT-608B
MAGX-001090-600L00
M/A-Com Technology Solutions

TRANSISTOR GAN 600W

  • Transistor Type: HEMT
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 21.3dB
  • Voltage - Test: 50V
  • Current Rating: 82A
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 600W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,808
1.03GHz ~ 1.09GHz
21.3dB
50V
82A
-
600mA
600W
65V
-
-
hot NE3512S02-T1C-A
CEL

HJ-FET NCH 13.5DB S02

  • Transistor Type: HFET
  • Frequency: 12GHz
  • Gain: 13.5dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.35dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S02
封装: 4-SMD, Flat Leads
库存48,132
12GHz
13.5dB
2V
70mA
0.35dB
10mA
-
4V
4-SMD, Flat Leads
S02
BLF6G15L-250PBRN:1
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT1110A

  • Transistor Type: LDMOS
  • Frequency: 1.47GHz ~ 1.51GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 64A
  • Noise Figure: -
  • Current - Test: 1.41A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1110A
  • Supplier Device Package: CDFM8
封装: SOT-1110A
库存7,168
1.47GHz ~ 1.51GHz
18.5dB
28V
64A
-
1.41A
60W
65V
SOT-1110A
CDFM8
MRF8S21140HR5
NXP

FET RF 65V 2.14GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 17.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 970mA
  • Power - Output: 34W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
封装: NI-780
库存3,808
2.14GHz
17.9dB
28V
-
-
970mA
34W
65V
NI-780
NI-780
BLF6G27LS-135,118
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16dB
  • Voltage - Test: 32V
  • Current Rating: 34A
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
封装: SOT-502B
库存4,240
2.5GHz ~ 2.7GHz
16dB
32V
34A
-
1.2A
20W
65V
SOT-502B
SOT502B
MRF5S18060NR1
NXP

FET RF 1.88GHZ TO-270-4

  • Transistor Type: N-Channel
  • Frequency: 1.88GHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 60W
  • Voltage - Rated: -
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
封装: TO-270AB
库存4,928
1.88GHz
-
-
-
-
-
60W
-
TO-270AB
TO-270 WB-4
hot MRFG35010
NXP

FET RF 15V 3.55GHZ NI360HF

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 9W
  • Voltage - Rated: 15V
  • Package / Case: NI-360HF
  • Supplier Device Package: NI-360HF
封装: NI-360HF
库存7,176
3.55GHz
10dB
12V
-
-
130mA
9W
15V
NI-360HF
NI-360HF
hot MRF5S19150HR3
NXP

FET RF 65V 1.99GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
封装: NI-880
库存16,248
1.99GHz
14dB
28V
-
-
1.4A
32W
65V
NI-880
NI-880
MRF373ALSR1
NXP

FET RF 70V 860MHZ NI-360S

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 18.2dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 75W
  • Voltage - Rated: 70V
  • Package / Case: NI-360S
  • Supplier Device Package: NI-360 Short Lead
封装: NI-360S
库存7,232
860MHz
18.2dB
32V
-
-
200mA
75W
70V
NI-360S
NI-360 Short Lead
MRF6S24140HSR3
NXP

FET RF 68V 2.39GHZ NI-88OS

  • Transistor Type: LDMOS
  • Frequency: 2.39GHz
  • Gain: 15.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 28W
  • Voltage - Rated: 68V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
封装: NI-880S
库存2,992
2.39GHz
15.2dB
28V
-
-
1.3A
28W
68V
NI-880S
NI-880S
PTFC210202FCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.2GHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 170mA
  • Power - Output: 5W
  • Voltage - Rated: 65V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封装: H-37248-4
库存3,952
2.2GHz
21dB
28V
-
-
170mA
5W
65V
H-37248-4
H-37248-4
BLF8G24LS-200PNJ
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.74A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封装: SOT539B
库存6,384
2.3GHz ~ 2.4GHz
17.2dB
28V
-
-
1.74A
60W
65V
SOT539B
SOT539B
BLF8G10LS-270,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 922.5MHz ~ 957.5MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 67W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
封装: SOT-502B
库存2,816
922.5MHz ~ 957.5MHz
18.5dB
28V
-
-
2A
67W
65V
SOT-502B
SOT502B
PD85035TR-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 17dB
  • Voltage - Test: 13.6V
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
封装: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
库存6,208
870MHz
17dB
13.6V
8A
-
350mA
15W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
BLS8G2731L-400PU
Ampleon USA Inc.

RF FET LDMOS 65V 13DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 3.1GHz
  • Gain: 13dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 400W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
封装: SOT539A
库存7,392
3.1GHz
13dB
32V
-
-
200mA
400W
65V
SOT539A
SOT539A
275-501N16A-00
IXYS

RF MOSFET N-CHANNEL DE275

  • Transistor Type: N-Channel
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 590W
  • Voltage - Rated: 500V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE275
封装: 6-SMD, Flat Lead Exposed Pad
库存7,440
100MHz
-
-
1mA
-
-
590W
500V
6-SMD, Flat Lead Exposed Pad
DE275
BF545C,215
NXP

JFET N-CH 30V 25MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封装: TO-236-3, SC-59, SOT-23-3
库存309,114
-
-
-
25mA
-
-
-
30V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
PXAD214218FV-V1-R2
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275G-6

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 720 mA
  • Power - Output: 290W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275G-6/2
  • Supplier Device Package: H-37275G-6/2
封装: -
Request a Quote
2.11GHz ~ 2.17GHz
13.5dB
28 V
10µA
-
720 mA
290W
65 V
H-37275G-6/2
H-37275G-6/2
A3G18H500-04SR3
NXP

RF MOSFET LDMOS 48V NI780

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 15.4dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 107W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780S-4L
  • Supplier Device Package: NI-780S-4L
封装: -
Request a Quote
1.805GHz ~ 1.88GHz
15.4dB
48 V
-
-
200 mA
107W
125 V
NI-780S-4L
NI-780S-4L
NE3512S02-T1D-A
Renesas Electronics Corporation

RF MOSFET HFET 2V S02

  • Transistor Type: HFET
  • Frequency: 12GHz
  • Gain: 13.5dB
  • Voltage - Test: 2 V
  • Current Rating: 70mA
  • Noise Figure: 0.35dB
  • Current - Test: 10 mA
  • Power - Output: -
  • Voltage - Rated: 4 V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S02
封装: -
Request a Quote
12GHz
13.5dB
2 V
70mA
0.35dB
10 mA
-
4 V
4-SMD, Flat Leads
S02
RF2L36075CF2
STMicroelectronics

RF MOSFET LDMOS 28V B2

  • Transistor Type: LDMOS
  • Frequency: 3.6GHz
  • Gain: 12.5dB
  • Voltage - Test: 28 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 75W
  • Voltage - Rated: 60 V
  • Package / Case: B2
  • Supplier Device Package: B2
封装: -
库存69
3.6GHz
12.5dB
28 V
1µA
-
600 mA
75W
60 V
B2
B2
BCP160C
BeRex Inc

RF MOSFET PHEMT FET 8V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 6GHz ~ 18GHz
  • Gain: 10dB
  • Voltage - Test: 8 V
  • Current Rating: 680mA
  • Noise Figure: -
  • Current - Test: 240 mA
  • Power - Output: 31.5dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
6GHz ~ 18GHz
10dB
8 V
680mA
-
240 mA
31.5dBm
12 V
Die
Die
PTFC210202FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.2GHz
  • Gain: 21dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 170 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封装: -
库存90
2.2GHz
21dB
28 V
-
-
170 mA
5W
65 V
H-37248-4
H-37248-4
CGHV40200PP-AMP1
MACOM Technology Solutions

RF MOSFET HEMT 50V 440199

  • Transistor Type: HEMT
  • Frequency: 1.5GHz ~ 2GHz
  • Gain: 21.7dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 200W
  • Voltage - Rated: 150 V
  • Package / Case: 440199
  • Supplier Device Package: 440199
封装: -
库存6
1.5GHz ~ 2GHz
21.7dB
50 V
-
-
1.2 A
200W
150 V
440199
440199
BLA9H0912LS-700GU
Ampleon USA Inc.

RF MOSFET LDMOS 50V CDFM2

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 20dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 700W
  • Voltage - Rated: 106 V
  • Package / Case: SOT-502E
  • Supplier Device Package: CDFM2
封装: -
库存54
960MHz ~ 1.215GHz
20dB
50 V
2.8µA
-
100 mA
700W
106 V
SOT-502E
CDFM2
A2T18S260-12SR3
NXP

RF MOSFET LDMOS 28V NI780

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.995GHz
  • Gain: 18.9dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.4 A
  • Power - Output: 257W
  • Voltage - Rated: 65 V
  • Package / Case: NI-780-2S2L
  • Supplier Device Package: NI-780-2S2L
封装: -
Request a Quote
1.805GHz ~ 1.995GHz
18.9dB
28 V
10µA
-
1.4 A
257W
65 V
NI-780-2S2L
NI-780-2S2L
BLC10G22XS-602AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15.4dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 600W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
封装: -
库存180
2.11GHz ~ 2.17GHz
15.4dB
30 V
2.8µA
-
1.2 A
600W
65 V
SOT-1258-4
SOT1258-4
B11G2327N70DX
Ampleon USA Inc.

RF MOSFET LDMOS 36QFN

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz ~ 2.7GHz
  • Gain: 30.3dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 65 V
  • Package / Case: 36-QFN Exposed Pad
  • Supplier Device Package: 36-PQFN (12x7)
封装: -
Request a Quote
2.3GHz ~ 2.7GHz
30.3dB
-
-
-
-
-
65 V
36-QFN Exposed Pad
36-PQFN (12x7)