页 52 - 晶体管 - FET,MOSFET - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET,MOSFET - 射频

记录 3,855
页  52/129
图片
零件编号
制造商
描述
封装
库存
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTVA093002TCV1XWSA1
Infineon Technologies

IC RF FET LDMOS H-49248H-4

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,784
-
-
-
-
-
-
-
-
-
-
PTFA212401E V4 R250
Infineon Technologies

FET RF 65V 2.14GHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
封装: 2-Flatpack, Fin Leads
库存7,424
2.14GHz
15.8dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads
H-36260-2
PTFA211801F V4
Infineon Technologies

IC FET RF LDMOS 180W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 35W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
封装: 2-Flatpack, Fin Leads, Flanged
库存3,456
2.14GHz
15.5dB
28V
10µA
-
1.2A
35W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
VMMK-1225-TR1G
Broadcom Limited

FET RF 5V 12GHZ 0402

  • Transistor Type: E-pHEMT
  • Frequency: 12GHz
  • Gain: 11dB
  • Voltage - Test: 2V
  • Current Rating: 50mA
  • Noise Figure: 1dB
  • Current - Test: 20mA
  • Power - Output: 8dBm
  • Voltage - Rated: 5V
  • Package / Case: 0402 (1005 Metric)
  • Supplier Device Package: 0402
封装: 0402 (1005 Metric)
库存3,600
12GHz
11dB
2V
50mA
1dB
20mA
8dBm
5V
0402 (1005 Metric)
0402
hot NE5531079A-T1-A
CEL

FET RF 30V 460MHZ 79A

  • Transistor Type: LDMOS
  • Frequency: 460MHz
  • Gain: -
  • Voltage - Test: 7.5V
  • Current Rating: 3A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 40dBm
  • Voltage - Rated: 30V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
封装: 4-SMD, Flat Leads
库存102,780
460MHz
-
7.5V
3A
-
200mA
40dBm
30V
4-SMD, Flat Leads
79A
hot MRF8S9260HR3
NXP

FET RF 70V 960MHZ NI-880H

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.7A
  • Power - Output: 75W
  • Voltage - Rated: 70V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
封装: NI-880
库存5,808
960MHz
18.6dB
28V
-
-
1.7A
75W
70V
NI-880
NI-880
MRF6VP41KHSR6
NXP

FET RF 2CH 110V 450MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 450MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
封装: NI-1230S
库存4,272
450MHz
20dB
50V
-
-
150mA
1000W
110V
NI-1230S
NI-1230S
MRF21010LR5
NXP

FET RF 65V 2.17GHZ NI-360

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-360
  • Supplier Device Package: NI-360
封装: NI-360
库存4,944
2.11GHz ~ 2.17GHz
13.5dB
28V
-
-
100mA
10W
65V
NI-360
NI-360
MRF6P9220HR3
NXP

FET RF 68V 880MHZ NI-860C3

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 47W
  • Voltage - Rated: 68V
  • Package / Case: NI-860C3
  • Supplier Device Package: NI-860C3
封装: NI-860C3
库存3,264
880MHz
20dB
28V
-
-
1.6A
47W
68V
NI-860C3
NI-860C3
BLL1214-35,112
Ampleon USA Inc.

RF FET LDMOS 75V 13DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 13dB
  • Voltage - Test: 36V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 35W
  • Voltage - Rated: 75V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
封装: SOT467C
库存6,304
1.2GHz ~ 1.4GHz
13dB
36V
-
-
50mA
35W
75V
SOT467C
SOT467C
BLA1011-2,112
Ampleon USA Inc.

RF FET LDMOS 75V 16DB SOT538A

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 16dB
  • Voltage - Test: 36V
  • Current Rating: 2.2A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 2W
  • Voltage - Rated: 75V
  • Package / Case: SOT-538A
  • Supplier Device Package: 2-CDIP
封装: SOT-538A
库存7,776
1.03GHz ~ 1.09GHz
16dB
36V
2.2A
-
50mA
2W
75V
SOT-538A
2-CDIP
PTFA180701EV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 70W H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 1.84GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36265-2
封装: 2-Flatpack, Fin Leads
库存2,752
1.84GHz
16.5dB
28V
10µA
-
550mA
60W
65V
2-Flatpack, Fin Leads
H-36265-2
PTFA220121MV4XUMA1
Infineon Technologies

FET RF LDMOS 10W SON10

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 16.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 9.3W
  • Voltage - Rated: 65V
  • Package / Case: 10-LDFN Exposed Pad
  • Supplier Device Package: PG-SON-10
封装: 10-LDFN Exposed Pad
库存2,416
2.14GHz
16.2dB
28V
-
-
150mA
9.3W
65V
10-LDFN Exposed Pad
PG-SON-10
BF2040WH6814XTSA1
Infineon Technologies

MOSFET N-CH 8V 40MA SOT343

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 23dB
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 1.6dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封装: SC-82A, SOT-343
库存2,624
800MHz
23dB
5V
40mA
1.6dB
15mA
-
8V
SC-82A, SOT-343
PG-SOT343-4
MMRF1013HSR5
NXP

FET RF 2CH 65V 2.9GHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.9GHz
  • Gain: 13.3dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 320W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
封装: NI-1230-4S
库存5,200
2.9GHz
13.3dB
30V
-
-
100mA
320W
65V
NI-1230-4S
NI-1230-4S
hot MRF8P20161HSR3
NXP

FET RF 2CH 65V 1.92GHZ NI-780S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.92GHz
  • Gain: 16.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 37W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
封装: NI-780S-4
库存7,360
1.92GHz
16.4dB
28V
-
-
550mA
37W
65V
NI-780S-4
NI-780S-4
VRF148AMP
Microsemi Corporation

RF MOSFET N-CHANNEL 50V M113

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 16dB
  • Voltage - Test: 50V
  • Current Rating: 100µA
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 30W
  • Voltage - Rated: 170V
  • Package / Case: M113
  • Supplier Device Package: M113
封装: M113
库存6,992
175MHz
16dB
50V
100µA
-
100mA
30W
170V
M113
M113
hot PD84010-E
STMicroelectronics

FET RF 40V 870MHZ

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 16.3dB
  • Voltage - Test: 7.5V
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 2W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
封装: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
库存6,576
870MHz
16.3dB
7.5V
8A
-
300mA
2W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
LET9045TR
STMicroelectronics

RF MOSFET LDMOS 28V POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 45W
  • Voltage - Rated: 80V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
封装: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
库存4,512
960MHz
18.5dB
28V
1µA
-
300mA
45W
80V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
BLP05H6350XRY
Ampleon USA Inc.

RF FET LDMOS 135V 27DB SOT12232

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 350W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1223-2
  • Supplier Device Package: 4-HSOPF
封装: SOT-1223-2
库存5,840
108MHz
27dB
50V
-
-
100mA
350W
135V
SOT-1223-2
4-HSOPF
CLF1G0035S-100PU
Ampleon USA Inc.

RF FET HEMT 150V 14DB SOT1228B

  • Transistor Type: HEMT
  • Frequency: 3GHz
  • Gain: 14dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 100W
  • Voltage - Rated: 150V
  • Package / Case: SOT-1228B
  • Supplier Device Package: SOT-1228B
封装: SOT-1228B
库存3,872
3GHz
14dB
50V
-
-
100mA
100W
150V
SOT-1228B
SOT-1228B
275-101N30A-00
IXYS

RF MOSFET N-CHANNEL DE275

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 550W
  • Voltage - Rated: 100V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE275
封装: 6-SMD, Flat Lead Exposed Pad
库存7,584
-
-
-
25µA
-
-
550W
100V
6-SMD, Flat Lead Exposed Pad
DE275
PD20015-E
STMicroelectronics

TRANS RF PWR N-CH POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 11dB
  • Voltage - Test: 13.6V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
封装: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
库存9,180
2GHz
11dB
13.6V
7A
-
350mA
15W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
hot MRF6V12250HR5
NXP

FET RF 100V 1.03GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 20.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 275W
  • Voltage - Rated: 100V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
封装: NI-780
库存6,368
1.03GHz
20.3dB
50V
-
-
100mA
275W
100V
NI-780
NI-780
BLF571,112
Ampleon USA Inc.

RF FET LDMOS 110V 27.5DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 225MHz
  • Gain: 27.5dB
  • Voltage - Test: 50V
  • Current Rating: 3.6A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 20W
  • Voltage - Rated: 110V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
封装: SOT467C
库存6,736
225MHz
27.5dB
50V
3.6A
-
50mA
20W
110V
SOT467C
SOT467C
BB305CEW-TL-E
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PXAC261212FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 15dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 280 mA
  • Power - Output: 28W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封装: -
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2.69GHz
15dB
28 V
-
-
280 mA
28W
65 V
H-37248-4
H-37248-4
TBB1004DMTL-H
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
WP28020015
WAVEPIA.,Co.Ltd

RF MOSFET GAN HEMT 28V DIE

  • Transistor Type: GaN HEMT
  • Frequency: 15GHz
  • Gain: 10dB
  • Voltage - Test: 28 V
  • Current Rating: 880mA
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 15W
  • Voltage - Rated: 28 V
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
库存90
15GHz
10dB
28 V
880mA
-
300 mA
15W
28 V
Die
Die
PTVA120121M-V1-R1K
MACOM Technology Solutions

RF MOSFET LDMOS 48V 10SON

  • Transistor Type: LDMOS
  • Frequency: 500MHz ~ 1.4GHz
  • Gain: 21.64dB
  • Voltage - Test: 48 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 15.62W
  • Voltage - Rated: 105 V
  • Package / Case: 10-LDFN Exposed Pad
  • Supplier Device Package: PG-SON-10
封装: -
Request a Quote
500MHz ~ 1.4GHz
21.64dB
48 V
1µA
-
50 mA
15.62W
105 V
10-LDFN Exposed Pad
PG-SON-10