页 47 - 晶体管 - FET，MOSFET - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 射频

记录 3,855
页  47/129
图片
零件编号
制造商
描述
封装
库存
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
hot 3SK264-5-TG-E
ON Semiconductor

FET RF 15V 200MHZ CP4

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: 23dB
  • Voltage - Test: 6V
  • Current Rating: 30mA
  • Noise Figure: 2.2dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 15V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: 4-CP
封装: SC-82A, SOT-343
库存107,760
200MHz
23dB
6V
30mA
2.2dB
10mA
-
15V
SC-82A, SOT-343
4-CP
BLF7G24L-160P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
封装: SOT539A
库存2,368
2.3GHz ~ 2.4GHz
18.5dB
28V
-
-
1.2A
30W
65V
SOT539A
SOT539A
hot MRF8S7120NR3
NXP

FET RF 70V 768MHZ

  • Transistor Type: LDMOS
  • Frequency: 768MHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 32W
  • Voltage - Rated: 70V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
封装: OM-780-2
库存3,712
768MHz
19.2dB
28V
-
-
600mA
32W
70V
OM-780-2
OM-780-2
MD7P19130HSR5
NXP

FET RF 2CH 65V 1.99GHZ NI780HS-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.99GHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.25A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
封装: NI-780S-4
库存5,904
1.99GHz
20dB
28V
-
-
1.25A
40W
65V
NI-780S-4
NI-780S-4
BF245A_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 6.5MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 6.5mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存4,640
-
-
-
6.5mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRFE6S9130HSR5
NXP

FET RF 66V 880MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 66V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封装: NI-780S
库存4,032
880MHz
19.2dB
28V
-
-
950mA
27W
66V
NI-780S
NI-780S
ATF-50189-TR2
Broadcom Limited

FET RF 7V 2GHZ SOT-89

  • Transistor Type: E-pHEMT
  • Frequency: 2GHz
  • Gain: 15.5dB
  • Voltage - Test: 4.5V
  • Current Rating: 1A
  • Noise Figure: 1.1dB
  • Current - Test: 280mA
  • Power - Output: 29dBm
  • Voltage - Rated: 7V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封装: TO-243AA
库存5,792
2GHz
15.5dB
4.5V
1A
1.1dB
280mA
29dBm
7V
TO-243AA
SOT-89
hot MRF6P23190HR6
NXP

FET RF 68V 2.39GHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 2.39GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 40W
  • Voltage - Rated: 68V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
封装: NI-1230
库存4,608
2.39GHz
14dB
28V
-
-
1.9A
40W
68V
NI-1230
NI-1230
MRF5S21090HSR3
NXP

FET RF 65V 2.11GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 19W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封装: NI-780S
库存4,800
2.11GHz
14.5dB
28V
-
-
850mA
19W
65V
NI-780S
NI-780S
BF909AWR,115
NXP

MOSFET N-CH 7V 40MA SOT143R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 2dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
封装: SC-82A, SOT-343
库存3,536
800MHz
-
5V
40mA
2dB
15mA
-
7V
SC-82A, SOT-343
CMPAK-4
SLD-2083CZ
RFMD

FET RF 35V 928MHZ RF083

  • Transistor Type: LDMOS
  • Frequency: 902MHz ~ 928MHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125mA
  • Power - Output: 12W
  • Voltage - Rated: 35V
  • Package / Case: SOT-538A
  • Supplier Device Package: RF083
封装: SOT-538A
库存3,392
902MHz ~ 928MHz
18dB
28V
-
-
125mA
12W
35V
SOT-538A
RF083
BF1211WR,115
NXP

MOSFET N-CH DUAL GATE 6V SOT343R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 29dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 6V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
封装: SC-82A, SOT-343
库存5,360
400MHz
29dB
5V
30mA
0.9dB
15mA
-
6V
SC-82A, SOT-343
CMPAK-4
BLF988,112
Ampleon USA Inc.

RF FET LDMOS 110V 20.8DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 20.8dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 250W
  • Voltage - Rated: 110V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
封装: SOT539A
库存5,328
860MHz
20.8dB
50V
-
-
1.3A
250W
110V
SOT539A
SOT539A
BLA8G1011L-300GU
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.06GHz
  • Gain: 16.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 300W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502F
封装: SOT-502A
库存5,136
1.06GHz
16.5dB
32V
-
-
150mA
300W
65V
SOT-502A
SOT502F
BLF2425M6LS180P:11
Ampleon USA Inc.

RF FET LDMOS 65V 13.3DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.45GHz
  • Gain: 13.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 180W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封装: SOT539B
库存7,616
2.45GHz
13.3dB
28V
-
-
10mA
180W
65V
SOT539B
SOT539B
BLF7G24LS-100,118
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
封装: SOT-502B
库存7,360
2.3GHz ~ 2.4GHz
18dB
28V
28A
-
900mA
20W
65V
SOT-502B
SOT502B
MMRF1317HSR5
NXP

TRANS 1030MHZ 1550W PEAK 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.03GHz
  • Gain: 18.2dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1300W
  • Voltage - Rated: 105V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
封装: NI-1230-4S
库存4,848
1.03GHz
18.2dB
50V
-
-
100mA
1300W
105V
NI-1230-4S
NI-1230-4S
BLS7G2325L-105,112
Ampleon USA Inc.

RF MOSFET LDMOS 10V SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.5GHz
  • Gain: 18dB
  • Voltage - Test: 10V
  • Current Rating: 5µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 110W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502A
封装: SOT-502A
库存3,808
2.3GHz ~ 2.5GHz
18dB
10V
5µA
-
-
110W
65V
SOT-502A
SOT502A
BLC10G18XS-301AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V DFM6

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 15.6dB
  • Voltage - Test: 30 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 300W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
封装: -
Request a Quote
1.805GHz ~ 1.88GHz
15.6dB
30 V
1.4µA
-
300 mA
300W
65 V
SOT-1275-1
DFM6
2SK852-T1-A
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLC10G18XS-552AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 16.1dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.9 A
  • Power - Output: 550W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
封装: -
Request a Quote
1.805GHz ~ 1.88GHz
16.1dB
30 V
2.8µA
-
1.9 A
550W
65 V
SOT-1258-4
SOT1258-4
BLL9G1214LS-600U
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 19dB
  • Voltage - Test: 32 V
  • Current Rating: 5µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 600W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
封装: -
库存180
1.2GHz ~ 1.4GHz
19dB
32 V
5µA
-
400 mA
600W
65 V
SOT-502B
SOT502B
PTFB241402FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
CGHV60170D-GP4
MACOM Technology Solutions

RF MOSFET HEMT 50V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 260 mA
  • Power - Output: 170W
  • Voltage - Rated: 150 V
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
库存150
6GHz
17dB
50 V
-
-
260 mA
170W
150 V
Die
Die
PTFC262808FV-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275G-6

  • Transistor Type: LDMOS
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 18dB
  • Voltage - Test: 28 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 10 mA
  • Power - Output: 280W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275G-6/2
  • Supplier Device Package: H-37275G-6/2
封装: -
Request a Quote
2.62GHz ~ 2.69GHz
18dB
28 V
1µA
-
10 mA
280W
65 V
H-37275G-6/2
H-37275G-6/2
0912GN-250V
Microchip Technology

RF MOSFET HEMT 50V

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 18.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 250W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: -
封装: -
Request a Quote
960MHz ~ 1.215GHz
18.5dB
50 V
-
-
60 mA
250W
65 V
2-Flatpack, Fin Leads, Flanged
-
WP48007025
WAVEPIA.,Co.Ltd

RF MOSFET GAN HEMT 48V DIE

  • Transistor Type: GaN HEMT
  • Frequency: 8GHz
  • Gain: 12dB
  • Voltage - Test: 48 V
  • Current Rating: 800mA
  • Noise Figure: -
  • Current - Test: 250 mA
  • Power - Output: 30W
  • Voltage - Rated: 48 V
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
库存105
8GHz
12dB
48 V
800mA
-
250 mA
30W
48 V
Die
Die
WP2806045UH
WAVEPIA.,Co.Ltd

RF MOSFET GAN HEMT 28V

  • Transistor Type: GaN HEMT
  • Frequency: 5GHz
  • Gain: 6.56dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 410 mA
  • Power - Output: 60W
  • Voltage - Rated: 160 V
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
库存36
5GHz
6.56dB
28 V
-
-
410 mA
60W
160 V
Module
-
2729GN-270V
Microchip Technology

RF MOSFET HEMT 50V 55-QP

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 2.9GHz
  • Gain: 15.6dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 290W
  • Voltage - Rated: 125 V
  • Package / Case: 55-QP
  • Supplier Device Package: 55-QP
封装: -
Request a Quote
2.7GHz ~ 2.9GHz
15.6dB
50 V
-
-
60 mA
290W
125 V
55-QP
55-QP
BF2040E6814HTSA1
Infineon Technologies

RF MOSFET 5V SOT143

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 800MHz
  • Gain: 23dB
  • Voltage - Test: 5 V
  • Current Rating: 40mA
  • Noise Figure: 1.6dB
  • Current - Test: 15 mA
  • Power - Output: -
  • Voltage - Rated: 8 V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT-143-3D
封装: -
Request a Quote
800MHz
23dB
5 V
40mA
1.6dB
15 mA
-
8 V
TO-253-4, TO-253AA
PG-SOT-143-3D