页 24 - 晶体管 - FET，MOSFET - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 射频

记录 3,855
页  24/129
图片
零件编号
制造商
描述
封装
库存
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BF 5020 E6327
Infineon Technologies

MOSFET N-CH 8V 25MA SOT143-4

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 26dB
  • Voltage - Test: 5V
  • Current Rating: 25mA
  • Noise Figure: 1.2dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
封装: TO-253-4, TO-253AA
库存7,040
800MHz
26dB
5V
25mA
1.2dB
10mA
-
8V
TO-253-4, TO-253AA
PG-SOT143-4
PTF080101M V1
Infineon Technologies

IC FET RF LDMOS 10W TSSOP-10

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: PG-RFP-10
封装: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
库存2,592
960MHz
16dB
28V
1µA
-
180mA
10W
65V
10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
PG-RFP-10
MAGX-000035-01000P
M/A-Com Technology Solutions

TRANSISTOR RF 10W GAN

  • Transistor Type: HEMT
  • Frequency: 3.5GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: 500mA
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,168
3.5GHz
17dB
50V
500mA
-
30mA
10W
65V
-
-
NE3520S03-A
CEL

FET RF 4V 20GHZ S03

  • Transistor Type: HFET
  • Frequency: 20GHz
  • Gain: 13.5dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.65dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S03
封装: 4-SMD, Flat Leads
库存3,584
20GHz
13.5dB
2V
70mA
0.65dB
10mA
-
4V
4-SMD, Flat Leads
S03
BLF6G20-180PN,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.8GHz ~ 1.88GHz
  • Gain: 18dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
封装: SOT539A
库存3,664
1.8GHz ~ 1.88GHz
18dB
32V
-
-
1.6A
50W
65V
SOT539A
SOT539A
MRF7S38010HR3
NXP

FET RF 65V 3.6GHZ NI-400

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 15dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 160mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: NI-400-240
  • Supplier Device Package: NI-400-240
封装: NI-400-240
库存3,600
3.4GHz ~ 3.6GHz
15dB
30V
-
-
160mA
2W
65V
NI-400-240
NI-400-240
MRF6S21100MBR1
NXP

FET RF 68V 2.16GHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.16GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.05A
  • Power - Output: 23W
  • Voltage - Rated: 68V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272 WB-4
封装: TO-272-4
库存4,720
2.11GHz ~ 2.16GHz
14.5dB
28V
-
-
1.05A
23W
68V
TO-272-4
TO-272 WB-4
hot MRF5S9100NR1
NXP

FET RF 68V 880MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 20W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
封装: TO-270AB
库存14,688
880MHz
19.5dB
26V
-
-
950mA
20W
68V
TO-270AB
TO-270 WB-4
hot SHF-0289
RFMD

FET RF 9V 1.96GHZ SOT-89

  • Transistor Type: HFET
  • Frequency: 1.96GHz
  • Gain: 20dB
  • Voltage - Test: 7V
  • Current Rating: 400mA
  • Noise Figure: 4dB
  • Current - Test: 200mA
  • Power - Output: 30.2dBm
  • Voltage - Rated: 9V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封装: TO-243AA
库存93,132
1.96GHz
20dB
7V
400mA
4dB
200mA
30.2dBm
9V
TO-243AA
SOT-89
hot 2N5486
ON Semiconductor

JFET N-CH 25V 30MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 30mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存74,760
-
-
-
30mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BLS7G2730L-200PU
Ampleon USA Inc.

RF FET LDMOS 65V 12DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.7GHz ~ 3GHz
  • Gain: 12dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
封装: SOT539A
库存7,984
2.7GHz ~ 3GHz
12dB
32V
-
-
100mA
200W
65V
SOT539A
SOT539A
BLS7G2933S-150,112
Ampleon USA Inc.

RF FET LDMOS 60V 13.5DB SOT9221

  • Transistor Type: LDMOS
  • Frequency: 2.9GHz ~ 3.3GHz
  • Gain: 13.5dB
  • Voltage - Test: 32V
  • Current Rating: 33A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 150W
  • Voltage - Rated: 60V
  • Package / Case: SOT922-1
  • Supplier Device Package: CDFM2
封装: SOT922-1
库存4,224
2.9GHz ~ 3.3GHz
13.5dB
32V
33A
-
100mA
150W
60V
SOT922-1
CDFM2
BLA8G1011L-300U
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.06GHz
  • Gain: 16.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 300W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502A
封装: SOT-502A
库存3,376
1.06GHz
16.5dB
32V
-
-
150mA
300W
65V
SOT-502A
SOT502A
MRF6VP11KGSR5
NXP

FET RF 2CH 110V 130MHZ NI-1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 130MHz
  • Gain: 26dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230S-4 GW
  • Supplier Device Package: NI-1230S-4 GullWing
封装: NI-1230S-4 GW
库存5,696
130MHz
26dB
50V
-
-
150mA
1000W
110V
NI-1230S-4 GW
NI-1230S-4 GullWing
A2T20H330W24SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.88GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 58W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
封装: NI-1230-4LS2L
库存3,440
1.88GHz
16.5dB
28V
-
-
700mA
58W
65V
NI-1230-4LS2L
NI-1230-4LS2L
NPT2019
M/A-Com Technology Solutions

FET RF 160V 6GHZ 14DFN

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 16dB
  • Voltage - Test: 48V
  • Current Rating: 3.5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 25W
  • Voltage - Rated: 160V
  • Package / Case: 14-TDFN Exposed Pad
  • Supplier Device Package: 14-DFN (3x6)
封装: 14-TDFN Exposed Pad
库存6,016
0Hz ~ 6GHz
16dB
48V
3.5A
-
150mA
25W
160V
14-TDFN Exposed Pad
14-DFN (3x6)
CLF1G0035S-100,112
Ampleon USA Inc.

RF FET HEMT 150V 12DB SOT467B

  • Transistor Type: HEMT
  • Frequency: 3GHz
  • Gain: 12dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 330mA
  • Power - Output: 100W
  • Voltage - Rated: 150V
  • Package / Case: SOT467B
  • Supplier Device Package: SOT467B
封装: SOT467B
库存4,656
3GHz
12dB
50V
-
-
330mA
100W
150V
SOT467B
SOT467B
BLF2425M9LS30U
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT1135B

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 18.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 20mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1135B
  • Supplier Device Package: SOT1135B
封装: SOT-1135B
库存5,248
2.45GHz
18.5dB
32V
-
-
20mA
30W
65V
SOT-1135B
SOT1135B
CGH27030F
Cree/Wolfspeed

RF MOSFET HEMT 28V 440166

  • Transistor Type: HEMT
  • Frequency: 3GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: 440166
  • Supplier Device Package: 440166
封装: 440166
库存6,792
3GHz
14.5dB
28V
-
-
150mA
30W
84V
440166
440166
BLP9H10-30GZ
Ampleon USA Inc.

RF MOSFET SOT1483-1

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: SOT-1483-1
  • Supplier Device Package: SOT1483-1
封装: -
库存207
-
-
-
-
-
-
-
-
SOT-1483-1
SOT1483-1
PTFC210202FCV1XWSA1
Infineon Technologies

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.2GHz
  • Gain: 21dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 170 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封装: -
Request a Quote
2.2GHz
21dB
28 V
-
-
170 mA
5W
65 V
H-37248-4
H-37248-4
ART2K0TFESJ
Ampleon USA Inc.

RF MOSFET 1230/TRAY

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1MHz ~ 400MHz
  • Gain: 29dB
  • Voltage - Test: 65 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 2000W
  • Voltage - Rated: 200 V
  • Package / Case: ACC-1230-6F-2
  • Supplier Device Package: ACC-1230-6F-2
封装: -
库存255
1MHz ~ 400MHz
29dB
65 V
2.8µA
-
100 mA
2000W
200 V
ACC-1230-6F-2
ACC-1230-6F-2
GTVA220701FA-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37265J-2

  • Transistor Type: HEMT
  • Frequency: 1.805GHz ~ 2.17GHz
  • Gain: 22dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 70W
  • Voltage - Rated: 125 V
  • Package / Case: H-37265J-2
  • Supplier Device Package: H-37265J-2
封装: -
Request a Quote
1.805GHz ~ 2.17GHz
22dB
48 V
-
-
200 mA
70W
125 V
H-37265J-2
H-37265J-2
BLC10G18XS-301AVTYZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V DFM6

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 15.6dB
  • Voltage - Test: 30 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 300W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
封装: -
Request a Quote
1.805GHz ~ 1.88GHz
15.6dB
30 V
1.4µA
-
300 mA
300W
65 V
SOT-1275-1
DFM6
BCP020C
BeRex Inc

RF MOSFET PHEMT FET 8V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 6GHz ~ 18GHz
  • Gain: 14dB
  • Voltage - Test: 8 V
  • Current Rating: 80mA
  • Noise Figure: 1.05dB
  • Current - Test: 30 mA
  • Power - Output: 22dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
6GHz ~ 18GHz
14dB
8 V
80mA
1.05dB
30 mA
22dBm
12 V
Die
Die
MRF5S19100HR
Freescale Semiconductor

RF MOSFET 65V NI780

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
1214GN-180LV
Microchip Technology

RF MOSFET HEMT 50V 55-KR

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 180W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
封装: -
库存30
1.2GHz ~ 1.4GHz
17dB
50 V
-
-
60 mA
180W
150 V
55-KR
55-KR
1214GN-50EQP-TS
Microchip Technology

RF MOSFET GAN 50V

  • Transistor Type: GaN
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 15.9dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 20 mA
  • Power - Output: 58W
  • Voltage - Rated: 150 V
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
1.2GHz ~ 1.4GHz
15.9dB
50 V
-
-
20 mA
58W
150 V
-
-
PTFB241402F-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz
  • Gain: 17dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 120 mA
  • Power - Output: 110W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封装: -
Request a Quote
2.4GHz
17dB
30 V
-
-
120 mA
110W
65 V
H-37248-4
H-37248-4
PTVA042502FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
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