页 89 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FDQ7236AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 14A/11A 14-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A, 11A Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Power - Max: 1.3W, 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SO	封装: 14-SOIC (0.154", 3.90mm Width)	库存96,912	Logic Level Gate	30V	14A, 11A	8.7 mOhm @ 14A, 10V	3V @ 250µA	24nC @ 15V	920pF @ 15V	1.3W, 1.1W	-55°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SO
APTM50DUM38TG	Microsemi Corporation	MOSFET 2N-CH 500V 90A SP4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封装: SP4	库存6,144	Standard	500V	90A	45 mOhm @ 45A, 10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM50DUM25TG	Microsemi Corporation	MOSFET 2N-CH 500V 149A LP8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 149A Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封装: SP4	库存3,648	Standard	500V	149A	25 mOhm @ 74.5A, 10V	4V @ 8mA	1200nC @ 10V	29600pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
VWM200-01P	IXYS	MOSFET 6N-CH 100V 210A V2 FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 210A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: V2-PAK Supplier Device Package: V2-PAK	封装: V2-PAK	库存7,968	Standard	100V	210A	5.2 mOhm @ 100A, 10V	4V @ 2mA	430nC @ 10V	-	-	-40°C ~ 175°C (TJ)	Through Hole	V2-PAK	V2-PAK
ZXMN6A11DN8TC	Diodes Incorporated	MOSFET 2N-CH 60V 2.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存1,044,864	Logic Level Gate	60V	2.5A	120 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	5.7nC @ 10V	330pF @ 40V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
VKM60-01P1	IXYS	MOSFET 4N-CH 100V 75A ECO-PAC2 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Power - Max: 300W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	封装: ECO-PAC2	库存3,136	Standard	100V	75A	25 mOhm @ 500mA, 10V	4V @ 4mA	260nC @ 10V	4500pF @ 25V	300W	-40°C ~ 150°C (TJ)	Through Hole	ECO-PAC2	ECO-PAC2
APTM100DSK35T3G	Microsemi Corporation	MOSFET 2N-CH 1000V 22A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存3,920	Standard	1000V (1kV)	22A	420 mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
ALD110808ASCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V Vgs(th) (Max) @ Id: 810mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.154", 3.90mm Width)	库存3,168	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	810mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
ALD210802SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.154", 3.90mm Width)	库存7,440	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
ALD212904PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存3,504	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
SI4922BDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存29,328	Standard	30V	8A	16 mOhm @ 5A, 10V	1.8V @ 250µA	62nC @ 10V	2070pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TSM6502CR RLG	TSC America Inc.	MOSFET, COMPLEMENTARY, N-CHANNEL FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Power - Max: 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	封装: 8-PowerTDFN	库存4,224	Standard	60V	24A (Tc), 18A (Tc)	34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V	2.5V @ 250µA	10.3nC @ 4.5V, 9.5nC @ 4.5V	1159pF @ 30V, 930pF @ 30V	40W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)
APTC60AM18SCG	Microsemi Corporation	MOSFET 2N-CH 600V 143A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 143A Rds On (Max) @ Id, Vgs: 18 mOhm @ 71.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power - Max: 833W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存7,376	Standard	600V	143A	18 mOhm @ 71.5A, 10V	3.9V @ 4mA	1036nC @ 10V	28000pF @ 25V	833W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
DMC3016LSD-13	Diodes Incorporated	MOSFET N/P-CH 30V 8.2A/6.2A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,480	Logic Level Gate	30V	8.2A, 6.2A	16 mOhm @ 12A, 10V	2.3V @ 250µA	25.1nC @ 10V	1415pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMDXB600UNEZ	Nexperia USA Inc.	MOSFET 2N-CH 20V 0.6A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Power - Max: 265mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	封装: 6-XFDFN Exposed Pad	库存220,614	Logic Level Gate	20V	600mA	620 mOhm @ 600mA, 4.5V	950mV @ 250µA	0.7nC @ 4.5V	21.3pF @ 10V	265mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
FDC6320C	Fairchild/ON Semiconductor	MOSFET N/P-CH 25V SSOT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-SSOT	封装: SOT-23-6 Thin, TSOT-23-6	库存432,000	Logic Level Gate	25V	220mA, 120mA	4 Ohm @ 400mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-SSOT
DMN26D0UDJ-7	Diodes Incorporated	MOSFET 2N-CH 20V 0.24A SOT963 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 240mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 14.1pF @ 15V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封装: SOT-963	库存242,400	Logic Level Gate	20V	240mA	3 Ohm @ 100mA, 4.5V	1.05V @ 250µA	-	14.1pF @ 15V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
TC8020K6-G	Microchip Technology	MOSFET 6N/6P-CH 200V 56VQFN FET Type: 6 N and 6 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Supplier Device Package: 56-QFN (8x8)	封装: 56-VFQFN Exposed Pad	库存22,200	Standard	200V	-	8 Ohm @ 1A, 10V	2.4V @ 1mA	-	50pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	56-VFQFN Exposed Pad	56-QFN (8x8)
SQJB00EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	封装: -	库存6,708	-	60V	30A (Tc)	13mOhm @ 10A, 10V	3.5V @ 250µA	35nC @ 10V	1700pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NVMFD5C672NLWFT1G	onsemi	MOSFET 2N-CH 60V 12A/49A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V Power - Max: 3.1W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	库存4,125	-	60V	12A (Ta), 49A (Tc)	11.9mOhm @ 10A, 10V	2.2V @ 30µA	5.7nC @ 4.5V	793pF @ 25V	3.1W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
CAB011A12GM3T	Wolfspeed, Inc.	SIC MODULE 1200V FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 141A (Tj) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V Vgs(th) (Max) @ Id: 3.9V @ 34mA Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Power - Max: 10mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	Request a Quote	-	1200V (1.2kV)	141A (Tj)	13.9mOhm @ 150A, 15V	3.9V @ 34mA	354nC @ 15V	11000pF @ 1000V	10mW	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
FDG6332C-PG	onsemi	MOSFET N/P-CH 20V 0.7A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 600mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V, 114pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: -	Request a Quote	-	20V	700mA (Ta), 600mA (Ta)	300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V, 2nC @ 4.5V	113pF @ 10V, 114pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
FW216-NMM-TL-E	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UM6K1NA-TP	Micro Commercial Co	MOSFET 2N-CH 30V 0.5A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存17,670	-	30V	500mA	750mOhm @ 300mA, 10V	1.5V @ 250µA	1.28nC @ 10V	28pF @ 15V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
AOCR32326	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 28A 8RIGIDCSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.75W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SMD, No Lead Supplier Device Package: 8-RigidCSP (6x2.5)	封装: -	Request a Quote	-	30V	28A	-	2.3V @ 250µA	142nC @ 10V	-	2.75W	-55°C ~ 150°C	Surface Mount	8-SMD, No Lead	8-RigidCSP (6x2.5)
AOND32324	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 13A/16A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (5x6)	封装: -	库存9,000	-	30V	13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)	14mOhm @ 12A, 10V	2.5V @ 250µA	20nC @ 10V	760pF @ 15V, 1995pF @ 15V	3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (5x6)
MKE38P600TLB	IXYS	MOSFET 600V 50A ISOPLUS-SMPD FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-SMD Module Supplier Device Package: ISOPLUS-SMPD™.B	封装: -	Request a Quote	-	600V	50A (Tc)	-	-	-	-	-	-	Surface Mount	9-SMD Module	ISOPLUS-SMPD™.B
RJK0230DPA-00-J5A	Renesas Electronics Corporation	MOSFET 2N-CH 25V 20A/50A 8WPAK FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A, 50A Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V Power - Max: 15W, 35W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-WPAK-D	封装: -	Request a Quote	Logic Level Gate	25V	20A, 50A	7mOhm @ 10A, 10V	-	7.7nC @ 4.5V	1650pF @ 10V	15W, 35W	150°C (TJ)	Surface Mount	8-PowerVDFN	8-WPAK-D
AONX38320	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 27A/66A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V, 6260pF @ 15V Power - Max: 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (5x6)	封装: -	Request a Quote	-	30V	27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc)	3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V	2.1V @ 250µA, 1.9V @ 250µA	26nC @ 10V, 123nC @ 10V	1220pF @ 15V, 6260pF @ 15V	4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (5x6)
TPCP8407-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 40V 5A/4A PS-8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta) Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V Power - Max: 690mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8	封装: -	库存9,984	-	40V	5A (Ta), 4A (Ta)	36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V	3V @ 1mA	11.8nC @ 10V, 18nC @ 10V	505pF @ 10V, 810pF @ 10V	690mW (Ta)	150°C	Surface Mount	8-SMD, Flat Lead	PS-8

FDQ7236AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 14A/11A 14-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A, 11A
Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Power - Max: 1.3W, 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO

封装: 14-SOIC (0.154", 3.90mm Width)

库存96,912

Logic Level Gate

30V

14A, 11A

8.7 mOhm @ 14A, 10V

3V @ 250µA

24nC @ 15V

920pF @ 15V

1.3W, 1.1W

-55°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SO

APTM50DUM38TG

Microsemi Corporation

MOSFET 2N-CH 500V 90A SP4

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封装: SP4

库存6,144

Standard

500V

90A

45 mOhm @ 45A, 10V

5V @ 5mA

246nC @ 10V

11200pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTM50DUM25TG

Microsemi Corporation

MOSFET 2N-CH 500V 149A LP8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 149A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封装: SP4

库存3,648

Standard

500V

149A

25 mOhm @ 74.5A, 10V

4V @ 8mA

1200nC @ 10V

29600pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

VWM200-01P

IXYS

MOSFET 6N-CH 100V 210A V2

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 210A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: V2-PAK
Supplier Device Package: V2-PAK

封装: V2-PAK

库存7,968

Standard

100V

210A

5.2 mOhm @ 100A, 10V

4V @ 2mA

430nC @ 10V

-

-40°C ~ 175°C (TJ)

Through Hole

V2-PAK

ZXMN6A11DN8TC

Diodes Incorporated

MOSFET 2N-CH 60V 2.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存1,044,864

Logic Level Gate

60V

2.5A

120 mOhm @ 2.5A, 10V

1V @ 250µA (Min)

5.7nC @ 10V

330pF @ 40V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

VKM60-01P1

IXYS

MOSFET 4N-CH 100V 75A ECO-PAC2

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Power - Max: 300W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

封装: ECO-PAC2

库存3,136

Standard

100V

75A

25 mOhm @ 500mA, 10V

4V @ 4mA

260nC @ 10V

4500pF @ 25V

300W

-40°C ~ 150°C (TJ)

Through Hole

ECO-PAC2

APTM100DSK35T3G

Microsemi Corporation

MOSFET 2N-CH 1000V 22A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存3,920

Standard

1000V (1kV)

22A

420 mOhm @ 11A, 10V

5V @ 2.5mA

186nC @ 10V

5200pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

ALD110808ASCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

库存3,168

Standard

10.6V

12mA, 3mA

500 Ohm @ 4.8V

810mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

ALD210802SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

库存7,440

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

ALD212904PAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存3,504

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

SI4922BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存29,328

Standard

30V

8A

16 mOhm @ 5A, 10V

1.8V @ 250µA

62nC @ 10V

2070pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

TSM6502CR RLG

TSC America Inc.

MOSFET, COMPLEMENTARY, N-CHANNEL

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Power - Max: 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)

封装: 8-PowerTDFN

库存4,224

Standard

60V

24A (Tc), 18A (Tc)

34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V

2.5V @ 250µA

10.3nC @ 4.5V, 9.5nC @ 4.5V

1159pF @ 30V, 930pF @ 30V

40W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFN (5x6)

APTC60AM18SCG

Microsemi Corporation

MOSFET 2N-CH 600V 143A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 143A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 71.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Power - Max: 833W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存7,376

Standard

600V

143A

18 mOhm @ 71.5A, 10V

3.9V @ 4mA

1036nC @ 10V

28000pF @ 25V

833W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

DMC3016LSD-13

Diodes Incorporated

MOSFET N/P-CH 30V 8.2A/6.2A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,480

Logic Level Gate

30V

8.2A, 6.2A

16 mOhm @ 12A, 10V

2.3V @ 250µA

25.1nC @ 10V

1415pF @ 15V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

PMDXB600UNEZ

Nexperia USA Inc.

MOSFET 2N-CH 20V 0.6A 6DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Power - Max: 265mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6

封装: 6-XFDFN Exposed Pad

库存220,614

Logic Level Gate

20V

600mA

620 mOhm @ 600mA, 4.5V

950mV @ 250µA

0.7nC @ 4.5V

21.3pF @ 10V

265mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

DFN1010B-6

FDC6320C

Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SSOT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-SSOT

封装: SOT-23-6 Thin, TSOT-23-6

库存432,000

Logic Level Gate

25V

220mA, 120mA

4 Ohm @ 400mA, 4.5V

1.5V @ 250µA

0.4nC @ 4.5V

9.5pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-SSOT

DMN26D0UDJ-7

Diodes Incorporated

MOSFET 2N-CH 20V 0.24A SOT963

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 240mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 14.1pF @ 15V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封装: SOT-963

库存242,400

Logic Level Gate

20V

240mA

3 Ohm @ 100mA, 4.5V

1.05V @ 250µA

-

14.1pF @ 15V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

TC8020K6-G

Microchip Technology

MOSFET 6N/6P-CH 200V 56VQFN

FET Type: 6 N and 6 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Supplier Device Package: 56-QFN (8x8)

封装: 56-VFQFN Exposed Pad

库存22,200

Standard

200V

-

8 Ohm @ 1A, 10V

2.4V @ 1mA

-

50pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

56-VFQFN Exposed Pad

56-QFN (8x8)

SQJB00EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

封装: -

库存6,708

-

60V

30A (Tc)

13mOhm @ 10A, 10V

3.5V @ 250µA

35nC @ 10V

1700pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

NVMFD5C672NLWFT1G

onsemi

MOSFET 2N-CH 60V 12A/49A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V
Power - Max: 3.1W (Ta), 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

库存4,125

-

60V

12A (Ta), 49A (Tc)

11.9mOhm @ 10A, 10V

2.2V @ 30µA

5.7nC @ 4.5V

793pF @ 25V

3.1W (Ta), 45W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

CAB011A12GM3T

Wolfspeed, Inc.

SIC MODULE 1200V

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Power - Max: 10mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

Request a Quote

-

1200V (1.2kV)

141A (Tj)

13.9mOhm @ 150A, 15V

3.9V @ 34mA

354nC @ 15V

11000pF @ 1000V

10mW

-40°C ~ 150°C (TJ)

Chassis Mount

Module

FDG6332C-PG

onsemi

MOSFET N/P-CH 20V 0.7A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 600mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V, 114pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: -

Request a Quote

-

20V

700mA (Ta), 600mA (Ta)

300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V

1.5V @ 250µA

1.5nC @ 4.5V, 2nC @ 4.5V

113pF @ 10V, 114pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

FW216-NMM-TL-E

onsemi

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

UM6K1NA-TP

Micro Commercial Co

MOSFET 2N-CH 30V 0.5A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存17,670

-

30V

500mA

750mOhm @ 300mA, 10V

1.5V @ 250µA

1.28nC @ 10V

28pF @ 15V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

AOCR32326

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 28A 8RIGIDCSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.75W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, No Lead
Supplier Device Package: 8-RigidCSP (6x2.5)

封装: -

Request a Quote

-

30V

28A

-

2.3V @ 250µA

142nC @ 10V

-

2.75W

-55°C ~ 150°C

Surface Mount

8-SMD, No Lead

8-RigidCSP (6x2.5)

AOND32324

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 13A/16A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)

封装: -

库存9,000

-

30V

13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)

14mOhm @ 12A, 10V

2.5V @ 250µA

20nC @ 10V

760pF @ 15V, 1995pF @ 15V

3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-DFN (5x6)

MKE38P600TLB

IXYS

MOSFET 600V 50A ISOPLUS-SMPD

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD™.B

封装: -

Request a Quote

-

600V

50A (Tc)

-

Surface Mount

9-SMD Module

ISOPLUS-SMPD™.B

RJK0230DPA-00-J5A

Renesas Electronics Corporation

MOSFET 2N-CH 25V 20A/50A 8WPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A, 50A
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
Power - Max: 15W, 35W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-WPAK-D

封装: -

Request a Quote

Logic Level Gate

25V

20A, 50A

7mOhm @ 10A, 10V

-

7.7nC @ 4.5V

1650pF @ 10V

15W, 35W

150°C (TJ)

Surface Mount

8-PowerVDFN

8-WPAK-D

AONX38320

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 27A/66A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V, 6260pF @ 15V
Power - Max: 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)

封装: -

Request a Quote

-

30V

27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc)

3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V

2.1V @ 250µA, 1.9V @ 250µA

26nC @ 10V, 123nC @ 10V

1220pF @ 15V, 6260pF @ 15V

4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (5x6)

TPCP8407-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 5A/4A PS-8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
Power - Max: 690mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8

封装: -

库存9,984

-

40V

5A (Ta), 4A (Ta)

36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V

3V @ 1mA

11.8nC @ 10V, 18nC @ 10V

505pF @ 10V, 810pF @ 10V

690mW (Ta)

150°C

Surface Mount

8-SMD, Flat Lead

PS-8