页 30 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRF7103Q	Infineon Technologies	MOSFET 2N-CH 50V 3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,992	Standard	50V	3A	130 mOhm @ 3A, 10V	3V @ 250µA	15nC @ 10V	255pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSD223P L6327	Infineon Technologies	MOSFET 2P-CH 20V 0.39A SOT363 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 390mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1.5µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存72,000	Logic Level Gate	20V	390mA	1.2 Ohm @ 390mA, 4.5V	1.2V @ 1.5µA	0.62nC @ 4.5V	56pF @ 15V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
IRF7751GTRPBF	Infineon Technologies	MOSFET 2P-CH 30V 4.5A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存6,928	Logic Level Gate	30V	4.5A	35 mOhm @ 4.5A, 10V	2.5V @ 250µA	44nC @ 10V	1464pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SIA936EDJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC-70 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 34 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封装: PowerPAK? SC-70-6 Dual	库存7,024	Logic Level Gate	20V	4.5A	34 mOhm @ 4A, 4.5V	1.3V @ 250µA	17nC @ 10V	-	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
SI6967DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 8V 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存6,160	Logic Level Gate	8V	-	30 mOhm @ 5A, 4.5V	450mV @ 250µA (Min)	40nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI6955ADQ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 2.5A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存3,776	Logic Level Gate	30V	2.5A	80 mOhm @ 2.9A, 10V	1V @ 250µA (Min)	8nC @ 5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDS6812A	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 6.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存56,232	Logic Level Gate	20V	6.7A	22 mOhm @ 6.7A, 4.5V	1.5V @ 250µA	19nC @ 4.5V	1082pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CPH6635-TL-H	ON Semiconductor	MOSFET N/P-CH 30V/20V CPH6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 400mA, 1.5A Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-CPH	封装: SOT-23-6 Thin, TSOT-23-6	库存4,128	Logic Level Gate	30V, 20V	400mA, 1.5A	3.7 Ohm @ 80mA, 4V	-	1.58nC @ 10V	7pF @ 10V	800mW	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-CPH
BUK7K89-100EX	Nexperia USA Inc.	MOSFET 2N-CH 100V 13A LFPAK56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 82.5 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V Power - Max: 38W Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: SOT-1205, 8-LFPAK56	库存4,384	Standard	100V	13A	82.5 mOhm @ 5A, 10V	4V @ 1mA	13.6nC @ 10V	811pF @ 25V	38W	-	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
SQJ960EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 8A FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存2,576	Logic Level Gate	60V	8A	36 mOhm @ 5.3A, 10V	2.5V @ 250µA	20nC @ 10V	735pF @ 25V	34W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SQJ912AEP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存4,704	Standard	40V	30A	9.3 mOhm @ 9.7A, 10V	2.5V @ 250µA	38nC @ 10V	1835pF @ 20V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
IRF7506TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 1.7A MICRO8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存90,792	Logic Level Gate	30V	1.7A	270 mOhm @ 1.2A, 10V	1V @ 250µA	11nC @ 10V	180pF @ 25V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
ALD1102ASAL	Advanced Linear Devices Inc.	MOSFET 2P-CH 10.6V 8SOIC FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,920	Standard	10.6V	-	270 Ohm @ 5V	1.2V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
US6M1TR	Rohm Semiconductor	MOSFET N/P-CH 30V/20V TUMT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	封装: 6-SMD, Flat Leads	库存321,156	Logic Level Gate	30V, 20V	1.4A, 1A	240 mOhm @ 1.4A, 10V	2.5V @ 1mA	2nC @ 5V	70pF @ 10V	1W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6
DMP4050SSD-13	Diodes Incorporated	MOSFET 2P-CH 40V 4A 8SO FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存604,284	Standard	40V	4A	50 mOhm @ 6A, 10V	3V @ 250µA	13.9nC @ 10V	674pF @ 20V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN2215UDM-7	Diodes Incorporated	MOSFET 2N-CH 20V 2A SOT-26 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V Power - Max: 650mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	封装: SOT-23-6	库存596,016	Logic Level Gate	20V	2A	100 mOhm @ 2.5A, 4.5V	1V @ 250µA	-	188pF @ 10V	650mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
UPA2450CTL-E1-A	Renesas Electronics Corporation	MOSFET 2N-CH 20V 8.6A 6HWSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.6A Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 10V Power - Max: 700mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Supplier Device Package: 6-HWSON	封装: -	Request a Quote	Logic Level Gate	20V	8.6A	17.5mOhm @ 4A, 4.5V	1.5V @ 1mA	6nC @ 4V	564pF @ 10V	700mW	-	Surface Mount	6-VFDFN Exposed Pad	6-HWSON
DMP3164LVT-13	Diodes Incorporated	MOSFET 2P-CH 2.8A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	-	2.8A (Ta)	95mOhm @ 2.7A, 10V	2.1V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SD5401CY-SOIC-14L-ROHS	Linear Integrated Systems, Inc.	MOSFET 4N-CH 10V 0.05A 14SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 10V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 75Ohm @ 1mA, 5V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	封装: -	库存29,919	-	10V	50mA (Ta)	75Ohm @ 1mA, 5V	1.5V @ 1µA	-	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
MSCC60AM23C4AG	Microchip Technology	MOSFET 2N-CH 600V 81A SP4 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP4	封装: -	Request a Quote	-	600V	81A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	SP4
AOE6930	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 22A/85A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V Power - Max: 24W, 75W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (5x6)	封装: -	库存8,808	-	30V	22A (Tc), 85A (Tc)	4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V	2.1V @ 250µA, 1.9V @ 250µA	15nC @ 4.5V, 65nC @ 4.5V	1075pF @ 15V, 5560pF @ 15V	24W, 75W	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (5x6)
VEC2401-TL-E	onsemi	NCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UPA602T-T1-A	Renesas Electronics Corporation	MOSFET 2N-CH 50V 0.1A SC59 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 5V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-59-6 Supplier Device Package: SC-59	封装: -	Request a Quote	Logic Level Gate	50V	100mA	25Ohm @ 10mA, 10V	1.8V @ 1µA	-	16pF @ 5V	300mW	150°C (TJ)	Surface Mount	SC-59-6	SC-59
G120P03S2	Goford Semiconductor	MOSFET 30V 16A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V Power - Max: 1.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存12,000	-	30V	16A (Tc)	14mOhm @ 10A, 10V	2.5V @ 250µA	35nC @ 10V	2835pF @ 15V	1.4W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
G220P03S2	Goford Semiconductor	MOSFET P+P-CH 30V 9A SOP-8L DUAL FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V Power - Max: 2.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存11,850	-	30V	9A (Tc)	22mOhm @ 3A, 10V	2V @ 250µA	24.5nC @ 10V	1277pF @ 15V	2.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
BSO303PHXUMA1	Infineon Technologies	MOSFET 2P-CH 30V 7A 8DSO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封装: -	Request a Quote	Logic Level Gate	30V	7A	21mOhm @ 8.2A, 10V	2V @ 100µA	49nC @ 10V	2678pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
FF33MR12W1M1HPB11BPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存84	-	-	-	-	-	-	-	-	-	-	-	-
G1NP02LLE	Goford Semiconductor	MOSFET 20V 1.3A/1.1A SOT23-6L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V Power - Max: 1.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	封装: -	库存9,000	-	20V	1.3A (Tc), 1.1A (Tc)	210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V	1V @ 250µA, 800mV @ 250µA	1nC @ 4.5V, 1.22nC @ 4.5V	146pF @ 10V, 177pF @ 10V	1.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
MSCSM70AM025CT6LIAG	Microchip Technology	SIC 2N-CH 700V 689A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.4V @ 24mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Power - Max: 1882W (Tc) Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	封装: -	Request a Quote	-	700V	689A (Tc)	3.2mOhm @ 240A, 20V	2.4V @ 24mA (Typ)	1290nC @ 20V	27000pF @ 700V	1882W (Tc)	-	Chassis Mount	Module	SP6C LI
DMT10H032LDV-7	Diodes Incorporated	MOSFET 2N-CH 100V 18A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	封装: -	Request a Quote	-	100V	18A (Tc)	36mOhm @ 10A, 10V	2.5V @ 250µA	11.9nC @ 10V	683pF @ 50V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)

AUIRF7103Q

Infineon Technologies

MOSFET 2N-CH 50V 3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,992

Standard

50V

3A

130 mOhm @ 3A, 10V

3V @ 250µA

15nC @ 10V

255pF @ 25V

2.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSD223P L6327

Infineon Technologies

MOSFET 2P-CH 20V 0.39A SOT363

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 390mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存72,000

Logic Level Gate

20V

390mA

1.2 Ohm @ 390mA, 4.5V

1.2V @ 1.5µA

0.62nC @ 4.5V

56pF @ 15V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

IRF7751GTRPBF

Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存6,928

Logic Level Gate

30V

4.5A

35 mOhm @ 4.5A, 10V

2.5V @ 250µA

44nC @ 10V

1464pF @ 25V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SIA936EDJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC-70

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

库存7,024

Logic Level Gate

20V

4.5A

34 mOhm @ 4A, 4.5V

1.3V @ 250µA

17nC @ 10V

-

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

SI6967DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 8V 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存6,160

Logic Level Gate

8V

-

30 mOhm @ 5A, 4.5V

450mV @ 250µA (Min)

40nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI6955ADQ-T1-E3

Vishay Siliconix

MOSFET 2P-CH 30V 2.5A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存3,776

Logic Level Gate

30V

2.5A

80 mOhm @ 2.9A, 10V

1V @ 250µA (Min)

8nC @ 5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDS6812A

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6.7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存56,232

Logic Level Gate

20V

6.7A

22 mOhm @ 6.7A, 4.5V

1.5V @ 250µA

19nC @ 4.5V

1082pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

CPH6635-TL-H

ON Semiconductor

MOSFET N/P-CH 30V/20V CPH6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 400mA, 1.5A
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH

封装: SOT-23-6 Thin, TSOT-23-6

库存4,128

Logic Level Gate

30V, 20V

400mA, 1.5A

3.7 Ohm @ 80mA, 4V

-

1.58nC @ 10V

7pF @ 10V

800mW

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-CPH

BUK7K89-100EX

Nexperia USA Inc.

MOSFET 2N-CH 100V 13A LFPAK56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 82.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
Power - Max: 38W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: SOT-1205, 8-LFPAK56

库存4,384

Standard

100V

13A

82.5 mOhm @ 5A, 10V

4V @ 1mA

13.6nC @ 10V

811pF @ 25V

38W

-

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

SQJ960EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 8A

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存2,576

Logic Level Gate

60V

8A

36 mOhm @ 5.3A, 10V

2.5V @ 250µA

20nC @ 10V

735pF @ 25V

34W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SQJ912AEP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存4,704

Standard

40V

30A

9.3 mOhm @ 9.7A, 10V

2.5V @ 250µA

38nC @ 10V

1835pF @ 20V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

IRF7506TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 1.7A MICRO8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存90,792

Logic Level Gate

30V

1.7A

270 mOhm @ 1.2A, 10V

1V @ 250µA

11nC @ 10V

180pF @ 25V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

ALD1102ASAL

Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8SOIC

FET Type: 2 P-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,920

Standard

10.6V

-

270 Ohm @ 5V

1.2V @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

US6M1TR

Rohm Semiconductor

MOSFET N/P-CH 30V/20V TUMT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

封装: 6-SMD, Flat Leads

库存321,156

Logic Level Gate

30V, 20V

1.4A, 1A

240 mOhm @ 1.4A, 10V

2.5V @ 1mA

2nC @ 5V

70pF @ 10V

1W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

TUMT6

DMP4050SSD-13

Diodes Incorporated

MOSFET 2P-CH 40V 4A 8SO

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存604,284

Standard

40V

4A

50 mOhm @ 6A, 10V

3V @ 250µA

13.9nC @ 10V

674pF @ 20V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN2215UDM-7

Diodes Incorporated

MOSFET 2N-CH 20V 2A SOT-26

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V
Power - Max: 650mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

封装: SOT-23-6

库存596,016

Logic Level Gate

20V

2A

100 mOhm @ 2.5A, 4.5V

1V @ 250µA

-

188pF @ 10V

650mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

UPA2450CTL-E1-A

Renesas Electronics Corporation

MOSFET 2N-CH 20V 8.6A 6HWSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.6A
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 10V
Power - Max: 700mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Supplier Device Package: 6-HWSON

封装: -

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Logic Level Gate

20V

8.6A

17.5mOhm @ 4A, 4.5V

1.5V @ 1mA

6nC @ 4V

564pF @ 10V

700mW

-

Surface Mount

6-VFDFN Exposed Pad

6-HWSON

DMP3164LVT-13

Diodes Incorporated

MOSFET 2P-CH 2.8A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

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-

2.8A (Ta)

95mOhm @ 2.7A, 10V

2.1V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

SD5401CY-SOIC-14L-ROHS

Linear Integrated Systems, Inc.

MOSFET 4N-CH 10V 0.05A 14SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 10V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 75Ohm @ 1mA, 5V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

封装: -

库存29,919

-

10V

50mA (Ta)

75Ohm @ 1mA, 5V

1.5V @ 1µA

-

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

MSCC60AM23C4AG

Microchip Technology

MOSFET 2N-CH 600V 81A SP4

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP4

封装: -

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-

600V

81A (Tc)

-

Chassis Mount

Module

SP4

AOE6930

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/85A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
Power - Max: 24W, 75W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)

封装: -

库存8,808

-

30V

22A (Tc), 85A (Tc)

4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V

2.1V @ 250µA, 1.9V @ 250µA

15nC @ 4.5V, 65nC @ 4.5V

1075pF @ 15V, 5560pF @ 15V

24W, 75W

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (5x6)

VEC2401-TL-E

onsemi

NCH+NCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

UPA602T-T1-A

Renesas Electronics Corporation

MOSFET 2N-CH 50V 0.1A SC59

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 5V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-59-6
Supplier Device Package: SC-59

封装: -

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Logic Level Gate

50V

100mA

25Ohm @ 10mA, 10V

1.8V @ 1µA

-

16pF @ 5V

300mW

150°C (TJ)

Surface Mount

SC-59-6

SC-59

G120P03S2

Goford Semiconductor

MOSFET 30V 16A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V
Power - Max: 1.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存12,000

-

30V

16A (Tc)

14mOhm @ 10A, 10V

2.5V @ 250µA

35nC @ 10V

2835pF @ 15V

1.4W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

G220P03S2

Goford Semiconductor

MOSFET P+P-CH 30V 9A SOP-8L DUAL

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Power - Max: 2.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存11,850

-

30V

9A (Tc)

22mOhm @ 3A, 10V

2V @ 250µA

24.5nC @ 10V

1277pF @ 15V

2.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

BSO303PHXUMA1

Infineon Technologies

MOSFET 2P-CH 30V 7A 8DSO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封装: -

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Logic Level Gate

30V

7A

21mOhm @ 8.2A, 10V

2V @ 100µA

49nC @ 10V

2678pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

FF33MR12W1M1HPB11BPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存84

-

G1NP02LLE

Goford Semiconductor

MOSFET 20V 1.3A/1.1A SOT23-6L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Power - Max: 1.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

封装: -

库存9,000

-

20V

1.3A (Tc), 1.1A (Tc)

210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V

1V @ 250µA, 800mV @ 250µA

1nC @ 4.5V, 1.22nC @ 4.5V

146pF @ 10V, 177pF @ 10V

1.25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L

MSCSM70AM025CT6LIAG

Microchip Technology

SIC 2N-CH 700V 689A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Power - Max: 1882W (Tc)
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

封装: -

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-

700V

689A (Tc)

3.2mOhm @ 240A, 20V

2.4V @ 24mA (Typ)

1290nC @ 20V

27000pF @ 700V

1882W (Tc)

-

Chassis Mount

Module

SP6C LI

DMT10H032LDV-7

Diodes Incorporated

MOSFET 2N-CH 100V 18A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Power - Max: 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

封装: -

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-

100V

18A (Tc)

36mOhm @ 10A, 10V

2.5V @ 250µA

11.9nC @ 10V

683pF @ 50V

1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)