页 188 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7751	Infineon Technologies	MOSFET 2P-CH 30V 4.5A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存34,716	Logic Level Gate	30V	4.5A	35 mOhm @ 4.5A, 10V	2.5V @ 250µA	44nC @ 10V	1464pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IRF5852	Infineon Technologies	MOSFET 2N-CH 20V 2.7A 6-TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 960mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封装: SOT-23-6 Thin, TSOT-23-6	库存12,444	Logic Level Gate	20V	2.7A	90 mOhm @ 2.7A, 4.5V	1.25V @ 250µA	6nC @ 4.5V	400pF @ 15V	960mW	-	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
AO4821L	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 12V 9A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,792	Logic Level Gate	12V	9A	19 mOhm @ 9A, 4.5V	850mV @ 250µA	23nC @ 4.5V	2100pF @ 6V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4942DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 5.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存105,588	Logic Level Gate	40V	5.3A	21 mOhm @ 7.4A, 10V	3V @ 250µA	32nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AON6922	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 25V 18A/31A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 18A, 31A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 12.5V Power - Max: 2W, 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN-EP (5x6)	封装: 8-WDFN Exposed Pad	库存3,168	Logic Level Gate	25V	18A, 31A	3.8 mOhm @ 20A, 10V	1.7V @ 250µA	32nC @ 10V	2340pF @ 12.5V	2W, 2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN-EP (5x6)
GWM220-004P3-SL SAM	IXYS	MOSFET 6N-CH 40V 180A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	封装: 17-SMD, Flat Leads	库存2,336	Standard	40V	180A	-	4V @ 1mA	94nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
SIA911DJ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封装: PowerPAK? SC-70-6 Dual	库存218,580	Standard	20V	4.5A	94 mOhm @ 2.8A, 4.5V	1V @ 250µA	12.8nC @ 8V	355pF @ 10V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
SI1025X-T1-E3	Vishay Siliconix	MOSFET 2P-CH 60V 0.19A SOT563F FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 190mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存3,029,664	Logic Level Gate	60V	190mA	4 Ohm @ 500mA, 10V	3V @ 250µA	1.7nC @ 15V	23pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
IPG20N04S4L08AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Power - Max: 54W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封装: 8-PowerVDFN	库存6,992	Logic Level Gate	40V	20A	8.2 mOhm @ 17A, 10V	2.2V @ 22µA	39nC @ 10V	3050pF @ 25V	54W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
SI1023CX-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V SC89-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 756 mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Power - Max: 220mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存42,720	Logic Level Gate	20V	-	756 mOhm @ 350mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	45pF @ 10V	220mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
HP8KA1TB	Rohm Semiconductor	MOSFET 2N-CH 30V 14A HSOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Rds On (Max) @ Id, Vgs: 5 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V Power - Max: 3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	封装: 8-PowerTDFN	库存5,056	Logic Level Gate	30V	14A	5 mOhm @ 14A, 10V	2.5V @ 10mA	24nC @ 4.5V	2550pF @ 15V	3W	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
FDC6302P	Fairchild/ON Semiconductor	MOSFET 2P-CH 25V 0.12A SSOT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 120mA Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	封装: SOT-23-6 Thin, TSOT-23-6	库存37,920	Logic Level Gate	25V	120mA	10 Ohm @ 200mA, 4.5V	1.5V @ 250µA	0.31nC @ 4.5V	11pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
DMN5010VAK-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存36,000	Logic Level Gate	50V	280mA	2 Ohm @ 50mA, 5V	1V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
APTM100H45SCTG	Microsemi Corporation	MOSFET 4N-CH 1000V 18A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封装: SP4	库存5,776	Standard	1000V (1kV)	18A	540 mOhm @ 9A, 10V	5V @ 2.5mA	154nC @ 10V	4350pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
SC8673040L	Panasonic Electronic Components	MOSFET 2N-CH 30V 16A/46A 8-HSO FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 46A Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 5.85mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 10V Power - Max: 1.7W, 2.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-HSO	封装: 8-PowerSMD, Flat Leads	库存26,154	Logic Level Gate	30V	16A, 46A	10 mOhm @ 8A, 10V	3V @ 5.85mA	6.3nC @ 4.5V	1092pF @ 10V	1.7W, 2.5W	150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-HSO
SH8M24TB1	Rohm Semiconductor	MOSFET N/P-CH 45V 4.5A/3.5A SOP8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存44,544	Standard	45V	4.5A, 3.5A	46 mOhm @ 4.5A, 10V	2.5V @ 1mA	9.6nC @ 5V	550pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SIA922EDJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 64 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封装: PowerPAK? SC-70-6 Dual	库存144,000	Logic Level Gate	30V	4.5A	64 mOhm @ 3A, 4.5V	1.4V @ 250µA	12nC @ 10V	-	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
PJT138L_R1_00001	Panjit International Inc.	MOSFET 2N-CH 60V 0.2A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 15V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存13,044	-	60V	200mA (Ta)	4.2Ohm @ 200mA, 10V	1.5V @ 250µA	0.7nC @ 4.5V	15pF @ 15V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
EM6K7T2CR	Rohm Semiconductor	MOSFET 2N-CH 20V 0.2A EMT6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封装: -	库存8,631	-	20V	200mA (Ta)	1.2Ohm @ 200mA, 2.5V	1V @ 1mA	-	25pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
DMN52D0UVTQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	50V	430mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.4nC @ 10V	41pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
AOC3860	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XDFN Supplier Device Package: 6-DFN (3.05x1.77)	封装: -	Request a Quote	-	-	-	-	900mV @ 250µA	44nC @ 4.5V	-	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-XDFN	6-DFN (3.05x1.77)
DMP2101UCP9-7	Diodes Incorporated	MOSFET 2P-CH 20V 2.5A 9DSN1515 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 392pF @ 10V Power - Max: 970mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-XFBGA, DSBGA Supplier Device Package: X2-DSN1515-9 (Type B)	封装: -	Request a Quote	-	20V	2.5A (Ta)	100mOhm @ 1A, 4.5V	900mV @ 250µA	3.2nC @ 4.5V	392pF @ 10V	970mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	9-XFBGA, DSBGA	X2-DSN1515-9 (Type B)
DMN2024UDH-7	Diodes Incorporated	MOSFET 2N-CH 20V 5.2A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 950mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8	封装: -	Request a Quote	-	20V	5.2A (Ta)	23mOhm @ 6.5A, 4.5V	1V @ 250µA	7.1nC @ 4.5V	647pF @ 10V	950mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerUDFN	U-DFN3030-8
G120N03D32	Goford Semiconductor	MOSFET 2N-CH 30V 28A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V Power - Max: 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (3.15x3.05)	封装: -	库存14,985	-	30V	28A (Tc)	12mOhm @ 10A, 10V	2.2V @ 250µA	18nC @ 10V	1089pF @ 15V	20W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (3.15x3.05)
NVMFWD024N06CT1G	onsemi	MOSFET 2N-CH 60V 8A/24A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V Power - Max: 3.1W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	Request a Quote	-	60V	8A (Ta), 24A (Tc)	22.6mOhm @ 3A, 10V	4V @ 20µA	5.7nC @ 10V	333pF @ 30V	3.1W (Ta), 28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
FF2MR12KM1PHOSA1	Infineon Technologies	SIC 2N-CH 1200V 500A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Vgs(th) (Max) @ Id: 5.15V @ 224mA Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	封装: -	Request a Quote	-	1200V (1.2kV)	500A (Tc)	2.13mOhm @ 500A, 15V	5.15V @ 224mA	1340nC @ 15V	39700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MM
MCQD08P06Y-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 85mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	60V	8A	85mOhm @ 4.3A, 10V	2.5V @ 250µA	4.27nC @ 4.5V	505pF @ 15V	1.9W	-55°C ~ 150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
TSM8588CV-RGG	Taiwan Semiconductor Corporation	-60V, -4.5A, COMPLEMENTARY P-CHA FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存30,000	-	-	-	-	-	-	-	-	-	-	-	-
SSM6N813R-LXHF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 100V 3.5A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Power - Max: 1.5W (Ta) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	封装: -	库存15,822	Logic Level Gate, 4.5V Drive	100V	3.5A (Ta)	112mOhm @ 3.5A, 10V	2.5V @ 100µA	3.6nC @ 4.5V	242pF @ 15V	1.5W (Ta)	175°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
AON5802BG	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 10A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-DFN-EP (2x5)	封装: -	Request a Quote	-	30V	10A (Ta)	18mOhm @ 7A, 4.5V	1.5V @ 250µA	32nC @ 10V	1050pF @ 15V	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-DFN-EP (2x5)

IRF7751

Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存34,716

Logic Level Gate

30V

4.5A

35 mOhm @ 4.5A, 10V

2.5V @ 250µA

44nC @ 10V

1464pF @ 25V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IRF5852

Infineon Technologies

MOSFET 2N-CH 20V 2.7A 6-TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 960mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封装: SOT-23-6 Thin, TSOT-23-6

库存12,444

Logic Level Gate

20V

2.7A

90 mOhm @ 2.7A, 4.5V

1.25V @ 250µA

6nC @ 4.5V

400pF @ 15V

960mW

-

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

AO4821L

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 12V 9A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,792

Logic Level Gate

12V

9A

19 mOhm @ 9A, 4.5V

850mV @ 250µA

23nC @ 4.5V

2100pF @ 6V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4942DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 5.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存105,588

Logic Level Gate

40V

5.3A

21 mOhm @ 7.4A, 10V

3V @ 250µA

32nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AON6922

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 18A/31A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 18A, 31A
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 12.5V
Power - Max: 2W, 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN-EP (5x6)

封装: 8-WDFN Exposed Pad

库存3,168

Logic Level Gate

25V

18A, 31A

3.8 mOhm @ 20A, 10V

1.7V @ 250µA

32nC @ 10V

2340pF @ 12.5V

2W, 2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN-EP (5x6)

GWM220-004P3-SL SAM

IXYS

MOSFET 6N-CH 40V 180A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Supplier Device Package: ISOPLUS-DIL?

封装: 17-SMD, Flat Leads

库存2,336

Standard

40V

180A

-

4V @ 1mA

94nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Flat Leads

ISOPLUS-DIL?

SIA911DJ-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

库存218,580

Standard

20V

4.5A

94 mOhm @ 2.8A, 4.5V

1V @ 250µA

12.8nC @ 8V

355pF @ 10V

6.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

SI1025X-T1-E3

Vishay Siliconix

MOSFET 2P-CH 60V 0.19A SOT563F

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存3,029,664

Logic Level Gate

60V

190mA

4 Ohm @ 500mA, 10V

3V @ 250µA

1.7nC @ 15V

23pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

IPG20N04S4L08AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Power - Max: 54W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封装: 8-PowerVDFN

库存6,992

Logic Level Gate

40V

20A

8.2 mOhm @ 17A, 10V

2.2V @ 22µA

39nC @ 10V

3050pF @ 25V

54W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

SI1023CX-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V SC89-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 756 mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存42,720

Logic Level Gate

20V

-

756 mOhm @ 350mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

45pF @ 10V

220mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

HP8KA1TB

Rohm Semiconductor

MOSFET 2N-CH 30V 14A HSOP8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Power - Max: 3W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

封装: 8-PowerTDFN

库存5,056

Logic Level Gate

30V

14A

5 mOhm @ 14A, 10V

2.5V @ 10mA

24nC @ 4.5V

2550pF @ 15V

3W

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

FDC6302P

Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.12A SSOT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 120mA
Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

封装: SOT-23-6 Thin, TSOT-23-6

库存37,920

Logic Level Gate

25V

120mA

10 Ohm @ 200mA, 4.5V

1.5V @ 250µA

0.31nC @ 4.5V

11pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

DMN5010VAK-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存36,000

Logic Level Gate

50V

280mA

2 Ohm @ 50mA, 5V

1V @ 250µA

-

50pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

APTM100H45SCTG

Microsemi Corporation

MOSFET 4N-CH 1000V 18A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封装: SP4

库存5,776

Standard

1000V (1kV)

18A

540 mOhm @ 9A, 10V

5V @ 2.5mA

154nC @ 10V

4350pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

SC8673040L

Panasonic Electronic Components

MOSFET 2N-CH 30V 16A/46A 8-HSO

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 46A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 5.85mA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 10V
Power - Max: 1.7W, 2.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-HSO

封装: 8-PowerSMD, Flat Leads

库存26,154

Logic Level Gate

30V

16A, 46A

10 mOhm @ 8A, 10V

3V @ 5.85mA

6.3nC @ 4.5V

1092pF @ 10V

1.7W, 2.5W

150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-HSO

SH8M24TB1

Rohm Semiconductor

MOSFET N/P-CH 45V 4.5A/3.5A SOP8

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存44,544

Standard

45V

4.5A, 3.5A

46 mOhm @ 4.5A, 10V

2.5V @ 1mA

9.6nC @ 5V

550pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SIA922EDJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4.5A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 64 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

库存144,000

Logic Level Gate

30V

4.5A

64 mOhm @ 3A, 4.5V

1.4V @ 250µA

12nC @ 10V

-

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

PJT138L_R1_00001

Panjit International Inc.

MOSFET 2N-CH 60V 0.2A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 15V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存13,044

-

60V

200mA (Ta)

4.2Ohm @ 200mA, 10V

1.5V @ 250µA

0.7nC @ 4.5V

15pF @ 15V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

EM6K7T2CR

Rohm Semiconductor

MOSFET 2N-CH 20V 0.2A EMT6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封装: -

库存8,631

-

20V

200mA (Ta)

1.2Ohm @ 200mA, 2.5V

1V @ 1mA

-

25pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

DMN52D0UVTQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

50V

430mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.4nC @ 10V

41pF @ 25V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

AOC3860

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XDFN
Supplier Device Package: 6-DFN (3.05x1.77)

封装: -

Request a Quote

-

900mV @ 250µA

44nC @ 4.5V

-

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

6-XDFN

6-DFN (3.05x1.77)

DMP2101UCP9-7

Diodes Incorporated

MOSFET 2P-CH 20V 2.5A 9DSN1515

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 392pF @ 10V
Power - Max: 970mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-XFBGA, DSBGA
Supplier Device Package: X2-DSN1515-9 (Type B)

封装: -

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-

20V

2.5A (Ta)

100mOhm @ 1A, 4.5V

900mV @ 250µA

3.2nC @ 4.5V

392pF @ 10V

970mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

9-XFBGA, DSBGA

X2-DSN1515-9 (Type B)

DMN2024UDH-7

Diodes Incorporated

MOSFET 2N-CH 20V 5.2A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Power - Max: 950mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: U-DFN3030-8

封装: -

Request a Quote

-

20V

5.2A (Ta)

23mOhm @ 6.5A, 4.5V

1V @ 250µA

7.1nC @ 4.5V

647pF @ 10V

950mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerUDFN

U-DFN3030-8

G120N03D32

Goford Semiconductor

MOSFET 2N-CH 30V 28A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (3.15x3.05)

封装: -

库存14,985

-

30V

28A (Tc)

12mOhm @ 10A, 10V

2.2V @ 250µA

18nC @ 10V

1089pF @ 15V

20W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (3.15x3.05)

NVMFWD024N06CT1G

onsemi

MOSFET 2N-CH 60V 8A/24A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Power - Max: 3.1W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

Request a Quote

-

60V

8A (Ta), 24A (Tc)

22.6mOhm @ 3A, 10V

4V @ 20µA

5.7nC @ 10V

333pF @ 30V

3.1W (Ta), 28W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

FF2MR12KM1PHOSA1

Infineon Technologies

SIC 2N-CH 1200V 500A AG-62MM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MM

封装: -

Request a Quote

-

1200V (1.2kV)

500A (Tc)

2.13mOhm @ 500A, 15V

5.15V @ 224mA

1340nC @ 15V

39700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-62MM

MCQD08P06Y-TP

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 85mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

Request a Quote

-

60V

8A

85mOhm @ 4.3A, 10V

2.5V @ 250µA

4.27nC @ 4.5V

505pF @ 15V

1.9W

-55°C ~ 150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

TSM8588CV-RGG

Taiwan Semiconductor Corporation

-60V, -4.5A, COMPLEMENTARY P-CHA

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存30,000

-

SSM6N813R-LXHF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Power - Max: 1.5W (Ta)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

封装: -

库存15,822

Logic Level Gate, 4.5V Drive

100V

3.5A (Ta)

112mOhm @ 3.5A, 10V

2.5V @ 100µA

3.6nC @ 4.5V

242pF @ 15V

1.5W (Ta)

175°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

AON5802BG

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 10A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Power - Max: 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: 6-DFN-EP (2x5)

封装: -

Request a Quote

-

30V

10A (Ta)

18mOhm @ 7A, 4.5V

1.5V @ 250µA

32nC @ 10V

1050pF @ 15V

3.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

6-DFN-EP (2x5)