页 177 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSO615CT	Infineon Technologies	MOSFET N/P-CH 60V 3.1A/2A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封装: 8-SOIC (0.154", 3.90mm Width)	库存11,400	Logic Level Gate	60V	3.1A, 2A	110 mOhm @ 3.1A, 10V	2V @ 20µA	22.5nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
EFC8822R-TF	ON Semiconductor	MOSFET N-CH DUAL 6CSP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,504	-	-	-	-	-	-	-	-	-	-	-	-
AON6974	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 22A/30A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A, 30A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 951pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	封装: 8-PowerVDFN	库存2,848	Logic Level Gate	30V	22A, 30A	5.2 mOhm @ 20A, 10V	2.2V @ 250µA	22.5nC @ 10V	951pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
MVDF1N05ER2G	ON Semiconductor	MOSFET 2N-CH 50V 2A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,480	Logic Level Gate	50V	2A	300 mOhm @ 1.5A, 10V	3V @ 250µA	12.5nC @ 10V	330pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI6966EDQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存414,252	Logic Level Gate	20V	-	30 mOhm @ 5.2A, 4.5V	600mV @ 250µA (Min)	25nC @ 4.5V	-	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4992EY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 75V 3.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,784	Logic Level Gate	75V	3.6A	48 mOhm @ 4.8A, 10V	3V @ 250µA	21nC @ 10V	-	1.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7301PBF	Infineon Technologies	MOSFET 2N-CH 20V 5.2A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,256	Logic Level Gate	20V	5.2A	50 mOhm @ 2.6A, 4.5V	700mV @ 250µA	20nC @ 4.5V	660pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD212914PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: - Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存4,736	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	-	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
SQJB42EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存2,064	Standard	40V	30A (Tc)	9.5 mOhm @ 10A, 10V	3.5V @ 250µA	30nC @ 10V	1500pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
ALD310702APCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 180mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封装: 16-DIP (0.300", 7.62mm)	库存4,304	Standard	8V	-	-	180mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
IRF7316GTRPBF	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存24,000	Logic Level Gate	30V	4.9A	58 mOhm @ 4.9A, 10V	1V @ 250µA	34nC @ 10V	710pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SH8J62TB1	Rohm Semiconductor	MOSFET 2P-CH 30V 4.5A SOP8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,608	Logic Level Gate	30V	4.5A	56 mOhm @ 4.5A, 10V	2.5V @ 1mA	8nC @ 5V	800pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
US6K2TR	Rohm Semiconductor	MOSFET 2N-CH 30V 1.4A TUMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	封装: 6-SMD, Flat Leads	库存432,000	Logic Level Gate	30V	1.4A	240 mOhm @ 1.4A, 10V	2.5V @ 1mA	2nC @ 5V	70pF @ 10V	1W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6
NTHC5513T1G	ON Semiconductor	MOSFET N/P-CH 20V 1206A FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	封装: 8-SMD, Flat Lead	库存123,960	Logic Level Gate	20V	2.9A, 2.2A	80 mOhm @ 2.9A, 4.5V	1.2V @ 250µA	4nC @ 4.5V	180pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
FDY2000PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 0.35A SOT-563F FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存36,000	Logic Level Gate	20V	350mA	1.2 Ohm @ 350mA, 4.5V	1.5V @ 250µA	1.4nC @ 4.5V	100pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SLA5065	Sanken	MOSFET 4N-CH 60V 7A 15-SIP FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Power - Max: 4.8W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 15-SIP, Exposed Tab, Formed Leads Supplier Device Package: 15-ZIP	封装: 15-SIP, Exposed Tab, Formed Leads	库存18,660	Standard	60V	7A	100 mOhm @ 3.5A, 10V	2V @ 250µA	-	660pF @ 10V	4.8W	150°C (TJ)	Through Hole	15-SIP, Exposed Tab, Formed Leads	15-ZIP
IRF7501TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 2.4A MICRO8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存5,344	Logic Level Gate	20V	2.4A	135 mOhm @ 1.7A, 4.5V	700mV @ 250µA	8nC @ 4.5V	260pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
FDC6333C	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 2.5A/2A SSOT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	封装: SOT-23-6 Thin, TSOT-23-6	库存86,856	Logic Level Gate	30V	2.5A, 2A	95 mOhm @ 2.5A, 10V	3V @ 250µA	6.6nC @ 10V	282pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
NTK3142PT1H	Sanyo	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SCH2822-TL-E	onsemi	PCH+SBD 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN16M0UCA6-7	Diodes Incorporated	MOSFET 2N-CH 12V 17A X4-DSN2112 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X4-DSN2112-6	封装: -	Request a Quote	-	12V	17A (Ta)	5.9mOhm @ 5A, 4.5V	1.3V @ 1mA	24nC @ 4.5V	-	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X4-DSN2112-6
DMN3022LDG-7	Diodes Incorporated	MOSFET 2N-CH 30V 7.6A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V Power - Max: 1.96W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	封装: -	Request a Quote	-	30V	7.6A (Ta), 15A (Tc)	22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V	2.1V @ 250µA, 1.2V @ 250µA	3.7nC @ 4.5V, 8nC @ 4.5V	481pF @ 15V, 996pF @ 15V	1.96W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)
ECH8606-TL-H	onsemi	NCH+NCH 4V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM170AM058CT6LIAG	Microchip Technology	SIC 2N-CH 1700V 353A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Power - Max: 1.642kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	库存6	-	1700V (1.7kV)	353A (Tc)	7.5mOhm @ 180A, 20V	3.3V @ 15mA	1068nC @ 20V	19800pF @ 1000V	1.642kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SSFB12N05	Good-Ark Semiconductor	MOSFET N/P-CH 12V 5A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, 9.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 6V, 520pF @ 6V Power - Max: 1.9W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN (2x2)	封装: -	库存24,000	-	12V	5A (Ta)	32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V	1V @ 250µA	6.6nC @ 4.5V, 9.2nC @ 4.5V	495pF @ 6V, 520pF @ 6V	1.9W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-DFN (2x2)
DMTH6015LDVWQ-7	Diodes Incorporated	MOSFET 2N-CH 60V 9.2A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Power - Max: 1.46W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXD)	封装: -	Request a Quote	-	60V	9.2A (Ta), 24.5A (Tc)	20.5mOhm @ 10A, 10V	2.5V @ 250µA	14.3nC @ 10V	825pF @ 30V	1.46W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXD)
2N7002HSX	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.32A 6TSSOP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 10V Power - Max: 420mW Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: -	库存18,351	-	60V	320mA (Ta)	1.6Ohm @ 500mA, 10V	2.5V @ 250µA	0.5nC @ 4.5V	34pF @ 10V	420mW	-55°C ~ 150°C (TA)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
FF8MR12W1M1HB70BPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存72	-	-	-	-	-	-	-	-	-	-	-	-
MMBT7002DW	Diotec Semiconductor	MOSFET SOT363 N+N 60V 7.5OHM FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	Logic Level Gate	60V	115mA (Ta)	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	-	50pF @ 25V	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	SOT-363
MCACD40NP03-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, 12mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V, 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V, 1860pF @ 15V Power - Max: 50W (Tj), 54W (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PDFN5060-8D	封装: -	Request a Quote	-	30V	40A (Tc)	9mOhm @ 20A, 10V, 12mOhm @ 20A, 10V	2.5V @ 250µA, 2.7V @ 250µA	23.6nC @ 10V, 38nC @ 10V	1050pF @ 15V, 1860pF @ 15V	50W (Tj), 54W (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PDFN5060-8D

BSO615CT

Infineon Technologies

MOSFET N/P-CH 60V 3.1A/2A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

库存11,400

Logic Level Gate

60V

3.1A, 2A

110 mOhm @ 3.1A, 10V

2V @ 20µA

22.5nC @ 10V

380pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

EFC8822R-TF

ON Semiconductor

MOSFET N-CH DUAL 6CSP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,504

-

AON6974

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/30A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A, 30A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 951pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

封装: 8-PowerVDFN

库存2,848

Logic Level Gate

30V

22A, 30A

5.2 mOhm @ 20A, 10V

2.2V @ 250µA

22.5nC @ 10V

951pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

MVDF1N05ER2G

ON Semiconductor

MOSFET 2N-CH 50V 2A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,480

Logic Level Gate

50V

2A

300 mOhm @ 1.5A, 10V

3V @ 250µA

12.5nC @ 10V

330pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI6966EDQ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存414,252

Logic Level Gate

20V

-

30 mOhm @ 5.2A, 4.5V

600mV @ 250µA (Min)

25nC @ 4.5V

-

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4992EY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 75V 3.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,784

Logic Level Gate

75V

3.6A

48 mOhm @ 4.8A, 10V

3V @ 250µA

21nC @ 10V

-

1.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7301PBF

Infineon Technologies

MOSFET 2N-CH 20V 5.2A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,256

Logic Level Gate

20V

5.2A

50 mOhm @ 2.6A, 4.5V

700mV @ 250µA

20nC @ 4.5V

660pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ALD212914PAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存4,736

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

-

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

SQJB42EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存2,064

Standard

40V

30A (Tc)

9.5 mOhm @ 10A, 10V

3.5V @ 250µA

30nC @ 10V

1500pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

ALD310702APCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 180mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封装: 16-DIP (0.300", 7.62mm)

库存4,304

Standard

8V

-

180mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

IRF7316GTRPBF

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存24,000

Logic Level Gate

30V

4.9A

58 mOhm @ 4.9A, 10V

1V @ 250µA

34nC @ 10V

710pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SH8J62TB1

Rohm Semiconductor

MOSFET 2P-CH 30V 4.5A SOP8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,608

Logic Level Gate

30V

4.5A

56 mOhm @ 4.5A, 10V

2.5V @ 1mA

8nC @ 5V

800pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

US6K2TR

Rohm Semiconductor

MOSFET 2N-CH 30V 1.4A TUMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

封装: 6-SMD, Flat Leads

库存432,000

Logic Level Gate

30V

1.4A

240 mOhm @ 1.4A, 10V

2.5V @ 1mA

2nC @ 5V

70pF @ 10V

1W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

TUMT6

NTHC5513T1G

ON Semiconductor

MOSFET N/P-CH 20V 1206A

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

封装: 8-SMD, Flat Lead

库存123,960

Logic Level Gate

20V

2.9A, 2.2A

80 mOhm @ 2.9A, 4.5V

1.2V @ 250µA

4nC @ 4.5V

180pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

FDY2000PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.35A SOT-563F

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存36,000

Logic Level Gate

20V

350mA

1.2 Ohm @ 350mA, 4.5V

1.5V @ 250µA

1.4nC @ 4.5V

100pF @ 10V

446mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

SLA5065

Sanken

MOSFET 4N-CH 60V 7A 15-SIP

FET Type: 4 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Power - Max: 4.8W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 15-SIP, Exposed Tab, Formed Leads
Supplier Device Package: 15-ZIP

封装: 15-SIP, Exposed Tab, Formed Leads

库存18,660

Standard

60V

7A

100 mOhm @ 3.5A, 10V

2V @ 250µA

-

660pF @ 10V

4.8W

150°C (TJ)

Through Hole

15-SIP, Exposed Tab, Formed Leads

15-ZIP

IRF7501TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 2.4A MICRO8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存5,344

Logic Level Gate

20V

2.4A

135 mOhm @ 1.7A, 4.5V

700mV @ 250µA

8nC @ 4.5V

260pF @ 15V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

FDC6333C

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 2.5A/2A SSOT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A
Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

封装: SOT-23-6 Thin, TSOT-23-6

库存86,856

Logic Level Gate

30V

2.5A, 2A

95 mOhm @ 2.5A, 10V

3V @ 250µA

6.6nC @ 10V

282pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

NTK3142PT1H

Sanyo

MOSFET P-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

SCH2822-TL-E

onsemi

PCH+SBD 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

DMN16M0UCA6-7

Diodes Incorporated

MOSFET 2N-CH 12V 17A X4-DSN2112

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X4-DSN2112-6

封装: -

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-

12V

17A (Ta)

5.9mOhm @ 5A, 4.5V

1.3V @ 1mA

24nC @ 4.5V

-

900mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X4-DSN2112-6

DMN3022LDG-7

Diodes Incorporated

MOSFET 2N-CH 30V 7.6A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
Power - Max: 1.96W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)

封装: -

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-

30V

7.6A (Ta), 15A (Tc)

22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V

2.1V @ 250µA, 1.2V @ 250µA

3.7nC @ 4.5V, 8nC @ 4.5V

481pF @ 15V, 996pF @ 15V

1.96W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PowerDI3333-8 (Type D)

ECH8606-TL-H

onsemi

NCH+NCH 4V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MSCSM170AM058CT6LIAG

Microchip Technology

SIC 2N-CH 1700V 353A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
Vgs(th) (Max) @ Id: 3.3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
Power - Max: 1.642kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

库存6

-

1700V (1.7kV)

353A (Tc)

7.5mOhm @ 180A, 20V

3.3V @ 15mA

1068nC @ 20V

19800pF @ 1000V

1.642kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SSFB12N05

Good-Ark Semiconductor

MOSFET N/P-CH 12V 5A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, 9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 6V, 520pF @ 6V
Power - Max: 1.9W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN (2x2)

封装: -

库存24,000

-

12V

5A (Ta)

32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V

1V @ 250µA

6.6nC @ 4.5V, 9.2nC @ 4.5V

495pF @ 6V, 520pF @ 6V

1.9W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-DFN (2x2)

DMTH6015LDVWQ-7

Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Power - Max: 1.46W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXD)

封装: -

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-

60V

9.2A (Ta), 24.5A (Tc)

20.5mOhm @ 10A, 10V

2.5V @ 250µA

14.3nC @ 10V

825pF @ 30V

1.46W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXD)

2N7002HSX

Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 10V
Power - Max: 420mW
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: -

库存18,351

-

60V

320mA (Ta)

1.6Ohm @ 500mA, 10V

2.5V @ 250µA

0.5nC @ 4.5V

34pF @ 10V

420mW

-55°C ~ 150°C (TA)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

FF8MR12W1M1HB70BPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存72

-

MMBT7002DW

Diotec Semiconductor

MOSFET SOT363 N+N 60V 7.5OHM

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

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Logic Level Gate

60V

115mA (Ta)

7.5Ohm @ 500mA, 10V

2.5V @ 250µA

-

50pF @ 25V

200mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

SOT-363

MCACD40NP03-TP

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, 12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V, 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V, 1860pF @ 15V
Power - Max: 50W (Tj), 54W (Tj)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PDFN5060-8D

封装: -

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-

30V

40A (Tc)

9mOhm @ 20A, 10V, 12mOhm @ 20A, 10V

2.5V @ 250µA, 2.7V @ 250µA

23.6nC @ 10V, 38nC @ 10V

1050pF @ 15V, 1860pF @ 15V

50W (Tj), 54W (Tj)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PDFN5060-8D