页 171 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FW276-TL-2H	ON Semiconductor	MOSFET 2N-CH 450V 0.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 700mA Rds On (Max) @ Id, Vgs: 12.1 Ohm @ 350mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 20V Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,960	Logic Level Gate	450V	700mA	12.1 Ohm @ 350mA, 10V	4.5V @ 1mA	3.7nC @ 10V	55pF @ 20V	1.6W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
2N7002DWA-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.18A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 6 Ohm @ 115mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存38,400	Logic Level Gate	60V	180mA	6 Ohm @ 115mA, 10V	2.5V @ 250µA	0.87nC @ 10V	22pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
EFC4618R-TR	ON Semiconductor	MOSFET 2N-CH EFCP1818 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XBGA, 4-FCBGA Supplier Device Package: EFCP1818-4CC-037	封装: 4-XBGA, 4-FCBGA	库存65,568	Standard	-	-	-	-	-	-	1.6W	150°C (TJ)	Surface Mount	4-XBGA, 4-FCBGA	EFCP1818-4CC-037
NTJD3158CT2G	ON Semiconductor	MOSFET N/P-CH 20V SC88-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存378,300	Logic Level Gate	20V	630mA, 820mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
TPCF8304(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 3.2A VS-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 330mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: VS-8 (2.9x1.5)	封装: 8-SMD, Flat Lead	库存22,584	Logic Level Gate	30V	3.2A	72 mOhm @ 1.6A, 10V	1.2V @ 1mA	14nC @ 10V	600pF @ 10V	330mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	VS-8 (2.9x1.5)
NTMD6P02R2SG	ON Semiconductor	MOSFET 2P-CH 20V 4.8A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V Power - Max: 750mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存11,028	Logic Level Gate	20V	4.8A	33 mOhm @ 6.2A, 4.5V	1.2V @ 250µA	35nC @ 4.5V	1700pF @ 16V	750mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDW2512NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 6A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存150,540	Logic Level Gate	20V	6A	28 mOhm @ 6A, 4.5V	1.5V @ 250µA	12nC @ 4.5V	670pF @ 10V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
PMWD19UN,518	NXP	MOSFET 2N-CH 30V 5.6A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.6A Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存7,936	Logic Level Gate	30V	5.6A	23 mOhm @ 3.5A, 4.5V	700mV @ 1mA	28nC @ 5V	1478pF @ 10V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTML602U12R020T3AG	Microsemi Corporation	MOSFET 2N-CH 600V 45A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45A Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 568W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存4,816	Standard	600V	45A	150 mOhm @ 22.5A, 10V	4V @ 2.5mA	-	7600pF @ 25V	568W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SQJ951EP-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 30V 30A PPAK FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 17 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V Power - Max: 56W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存7,504	Standard	30V	30A	17 mOhm @ 7.5A, 10V	2.5V @ 250µA	50nC @ 10V	1680pF @ 10V	56W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SP8K5FU6TB	Rohm Semiconductor	MOSFET 2N-CH 30V 3.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存18,096	Logic Level Gate	30V	3.5A	83 mOhm @ 3.5A, 10V	2.5V @ 1mA	3.5nC @ 5V	140pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SI4214DDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8.5A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存688,488	Logic Level Gate	30V	8.5A	19.5 mOhm @ 8A, 10V	2.5V @ 250µA	22nC @ 10V	660pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TSM6963SDCA RVG	TSC America Inc.	MOSFET, DUAL, P-CHANNEL, -20V, - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 5V Power - Max: 1.14W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存36,000	Standard	20V	4.5A (Tc)	30 mOhm @ 4.5A, 4.5V	1V @ 250µA	20nC @ 4.5V	1500pF @ 5V	1.14W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4830CDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 2.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,400	Logic Level Gate	30V	8A	20 mOhm @ 8A, 10V	3V @ 1mA	25nC @ 10V	950pF @ 15V	2.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMT3009LDT-7	Diodes Incorporated	MOSFET 2N-CH 30V 30A V-DFN3030-8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 14.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: V-DFN3030-8 (Type K)	封装: 8-VDFN Exposed Pad	库存2,976	Standard	30V	30A	11.1 mOhm @ 14.4A, 10V	3V @ 250µA	20nC @ 15V	1500pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	V-DFN3030-8 (Type K)
DMG9926UDM-7	Diodes Incorporated	MOSFET 2N-CH 20V 4.2A SOT-26 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 28 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V Power - Max: 980mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	封装: SOT-23-6	库存3,840	Logic Level Gate	20V	4.2A	28 mOhm @ 8.2A, 4.5V	900mV @ 250µA	8.3nC @ 4.5V	856pF @ 10V	980mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
EM6M2T2R	Rohm Semiconductor	MOSFET N/P-CH 20V 0.2A EMT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 1 Ohm @ 200mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封装: SOT-563, SOT-666	库存1,647,552	Logic Level Gate	20V	200mA	1 Ohm @ 200mA, 4V	1V @ 1mA	-	25pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
CAS530M12BM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 630A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 630A (Tc) Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	630A (Tc)	3.47mOhm @ 530A, 15V	3.6V @ 127mA	1362nC @ 15V	38900pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
G220P03D32	Goford Semiconductor	MOSFET P+P-CH 30V12A 30W DFN3*3- FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V Power - Max: 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (3.15x3.05) Dual	封装: -	库存15,000	-	30V	12A (Tc)	22mOhm @ 3A, 10V	2V @ 250µA	25nC @ 10V	1305pF @ 15V	30W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (3.15x3.05) Dual
SSM5P15FU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 0.1A USV FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封装: -	库存8,376	-	30V	100mA (Ta)	12Ohm @ 10mA, 4V	1.7V @ 100µA	-	9.1pF @ 3V	200mW (Ta)	150°C	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
DMTH10H017LPD-13	Diodes Incorporated	MOSFET 2N-CH 100V 59A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Power - Max: 2.6W (Ta), 93W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type E)	封装: -	库存6,912	-	100V	59A (Tc)	17.4mOhm @ 17A, 10V	3V @ 250µA	28.6nC @ 10V	1986pF @ 50V	2.6W (Ta), 93W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type E)
CMS25NN03V8-HF	Comchip Technology	MOSFET 2N-CH 30V 25A 8DFN FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 15V Power - Max: 1.7W (Ta), 20.8W (Tc) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)	封装: -	Request a Quote	-	30V	25A	20mOhm @ 10A, 10V	2.5V @ 250µA	7.2nC @ 4.5V	572pF @ 15V	1.7W (Ta), 20.8W (Tc)	-55°C ~ 150°C	Surface Mount	8-PowerWDFN	8-PDFN (SPR-PAK ) (3.3x3.3)
SSM6P35AFU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.25A US6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Power - Max: 285mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: -	库存17,970	Logic Level Gate, 1.2V Drive	20V	250mA (Ta)	1.4Ohm @ 150mA, 4.5V	1V @ 100µA	-	42pF @ 10V	285mW (Ta)	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SIA907EDJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V SMD FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMT35M8LDG-7	Diodes Incorporated	MOSFET 2N-CH 30V 17A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V Power - Max: 980mW (Ta), 2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type G)	封装: -	库存6,000	-	30V	17A (Ta), 15.3A (Ta)	4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V	1.9V @ 250µA	22.7nC @ 10V, 16.3nC @ 10V	1510pF @ 15V, 1032pF @ 15V	980mW (Ta), 2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type G)
FF4MR20KM1HPHPSA1	Infineon Technologies	SIC 2N-CH 2000V AG-62MMHB FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V Vgs(th) (Max) @ Id: 5.15V @ 168mA Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV Power - Max: - Operating Temperature: -40°C ~ 175°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MMHB	封装: -	库存30	-	2000V (2kV)	280A (Tc)	5.3mOhm @ 300A, 18V	5.15V @ 168mA	1170nC @ 18V	36100pF @ 1.2kV	-	-40°C ~ 175°C	Chassis Mount	Module	AG-62MMHB
DMN31D5UDJ-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.22A SOT963 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封装: -	库存20,487	-	30V	220mA (Ta)	1.5Ohm @ 100mA, 4.5V	1V @ 250µA	0.38nC @ 4.5V	22.6pF @ 15V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
MMFTN620KDW	Diotec Semiconductor	MOSFET SOT363 N+N 60V 0.35A 2OHM FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: - Supplier Device Package: SOT-363	封装: -	Request a Quote	-	-	350mA	-	-	-	-	-	-	Surface Mount	-	SOT-363
DMP4013SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NVMFD030N06CT1G	onsemi	MOSFET 2N-CH 60V 7A/19A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V Power - Max: 3.2W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	Request a Quote	-	60V	7A (Ta), 19A (Tc)	29.7mOhm @ 3A, 10V	4V @ 13µA	4.7nC @ 10V	255pF @ 30V	3.2W (Ta), 23W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)

FW276-TL-2H

ON Semiconductor

MOSFET 2N-CH 450V 0.7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 700mA
Rds On (Max) @ Id, Vgs: 12.1 Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 20V
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,960

Logic Level Gate

450V

700mA

12.1 Ohm @ 350mA, 10V

4.5V @ 1mA

3.7nC @ 10V

55pF @ 20V

1.6W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

2N7002DWA-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.18A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 6 Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存38,400

Logic Level Gate

60V

180mA

6 Ohm @ 115mA, 10V

2.5V @ 250µA

0.87nC @ 10V

22pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

EFC4618R-TR

ON Semiconductor

MOSFET 2N-CH EFCP1818

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XBGA, 4-FCBGA
Supplier Device Package: EFCP1818-4CC-037

封装: 4-XBGA, 4-FCBGA

库存65,568

Standard

-

1.6W

150°C (TJ)

Surface Mount

4-XBGA, 4-FCBGA

EFCP1818-4CC-037

NTJD3158CT2G

ON Semiconductor

MOSFET N/P-CH 20V SC88-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存378,300

Logic Level Gate

20V

630mA, 820mA

375 mOhm @ 630mA, 4.5V

1.5V @ 250µA

3nC @ 4.5V

46pF @ 20V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

TPCF8304(TE85L,F,M

Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 3.2A VS-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 330mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: VS-8 (2.9x1.5)

封装: 8-SMD, Flat Lead

库存22,584

Logic Level Gate

30V

3.2A

72 mOhm @ 1.6A, 10V

1.2V @ 1mA

14nC @ 10V

600pF @ 10V

330mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

VS-8 (2.9x1.5)

NTMD6P02R2SG

ON Semiconductor

MOSFET 2P-CH 20V 4.8A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
Power - Max: 750mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存11,028

Logic Level Gate

20V

4.8A

33 mOhm @ 6.2A, 4.5V

1.2V @ 250µA

35nC @ 4.5V

1700pF @ 16V

750mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FDW2512NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存150,540

Logic Level Gate

20V

6A

28 mOhm @ 6A, 4.5V

1.5V @ 250µA

12nC @ 4.5V

670pF @ 10V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

PMWD19UN,518

NXP

MOSFET 2N-CH 30V 5.6A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存7,936

Logic Level Gate

30V

5.6A

23 mOhm @ 3.5A, 4.5V

700mV @ 1mA

28nC @ 5V

1478pF @ 10V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

APTML602U12R020T3AG

Microsemi Corporation

MOSFET 2N-CH 600V 45A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 45A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Power - Max: 568W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存4,816

Standard

600V

45A

150 mOhm @ 22.5A, 10V

4V @ 2.5mA

-

7600pF @ 25V

568W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SQJ951EP-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 30V 30A PPAK

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Power - Max: 56W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存7,504

Standard

30V

30A

17 mOhm @ 7.5A, 10V

2.5V @ 250µA

50nC @ 10V

1680pF @ 10V

56W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SP8K5FU6TB

Rohm Semiconductor

MOSFET 2N-CH 30V 3.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存18,096

Logic Level Gate

30V

3.5A

83 mOhm @ 3.5A, 10V

2.5V @ 1mA

3.5nC @ 5V

140pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SI4214DDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存688,488

Logic Level Gate

30V

8.5A

19.5 mOhm @ 8A, 10V

2.5V @ 250µA

22nC @ 10V

660pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

TSM6963SDCA RVG

TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -20V, -

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 5V
Power - Max: 1.14W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存36,000

Standard

20V

4.5A (Tc)

30 mOhm @ 4.5A, 4.5V

1V @ 250µA

20nC @ 4.5V

1500pF @ 5V

1.14W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4830CDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Power - Max: 2.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,400

Logic Level Gate

30V

8A

20 mOhm @ 8A, 10V

3V @ 1mA

25nC @ 10V

950pF @ 15V

2.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMT3009LDT-7

Diodes Incorporated

MOSFET 2N-CH 30V 30A V-DFN3030-8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: V-DFN3030-8 (Type K)

封装: 8-VDFN Exposed Pad

库存2,976

Standard

30V

30A

11.1 mOhm @ 14.4A, 10V

3V @ 250µA

20nC @ 15V

1500pF @ 15V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

V-DFN3030-8 (Type K)

DMG9926UDM-7

Diodes Incorporated

MOSFET 2N-CH 20V 4.2A SOT-26

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V
Power - Max: 980mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

封装: SOT-23-6

库存3,840

Logic Level Gate

20V

4.2A

28 mOhm @ 8.2A, 4.5V

900mV @ 250µA

8.3nC @ 4.5V

856pF @ 10V

980mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

EM6M2T2R

Rohm Semiconductor

MOSFET N/P-CH 20V 0.2A EMT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 1 Ohm @ 200mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封装: SOT-563, SOT-666

库存1,647,552

Logic Level Gate

20V

200mA

1 Ohm @ 200mA, 4V

1V @ 1mA

-

25pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

CAS530M12BM3

Wolfspeed, Inc.

SIC 2N-CH 1200V 630A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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1200V (1.2kV)

630A (Tc)

3.47mOhm @ 530A, 15V

3.6V @ 127mA

1362nC @ 15V

38900pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

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G220P03D32

Goford Semiconductor

MOSFET P+P-CH 30V12A 30W DFN3*3-

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
Power - Max: 30W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (3.15x3.05) Dual

封装: -

库存15,000

-

30V

12A (Tc)

22mOhm @ 3A, 10V

2V @ 250µA

25nC @ 10V

1305pF @ 15V

30W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (3.15x3.05) Dual

SSM5P15FU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A USV

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Power - Max: 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封装: -

库存8,376

-

30V

100mA (Ta)

12Ohm @ 10mA, 4V

1.7V @ 100µA

-

9.1pF @ 3V

200mW (Ta)

150°C

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

DMTH10H017LPD-13

Diodes Incorporated

MOSFET 2N-CH 100V 59A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Power - Max: 2.6W (Ta), 93W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type E)

封装: -

库存6,912

-

100V

59A (Tc)

17.4mOhm @ 17A, 10V

3V @ 250µA

28.6nC @ 10V

1986pF @ 50V

2.6W (Ta), 93W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type E)

CMS25NN03V8-HF

Comchip Technology

MOSFET 2N-CH 30V 25A 8DFN

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 15V
Power - Max: 1.7W (Ta), 20.8W (Tc)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)

封装: -

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30V

25A

20mOhm @ 10A, 10V

2.5V @ 250µA

7.2nC @ 4.5V

572pF @ 15V

1.7W (Ta), 20.8W (Tc)

-55°C ~ 150°C

Surface Mount

8-PowerWDFN

8-PDFN (SPR-PAK ) (3.3x3.3)

SSM6P35AFU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
Power - Max: 285mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: -

库存17,970

Logic Level Gate, 1.2V Drive

20V

250mA (Ta)

1.4Ohm @ 150mA, 4.5V

1V @ 100µA

-

42pF @ 10V

285mW (Ta)

150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

SIA907EDJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V SMD

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

DMT35M8LDG-7

Diodes Incorporated

MOSFET 2N-CH 30V 17A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V
Power - Max: 980mW (Ta), 2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type G)

封装: -

库存6,000

-

30V

17A (Ta), 15.3A (Ta)

4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V

1.9V @ 250µA

22.7nC @ 10V, 16.3nC @ 10V

1510pF @ 15V, 1032pF @ 15V

980mW (Ta), 2W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type G)

FF4MR20KM1HPHPSA1

Infineon Technologies

SIC 2N-CH 2000V AG-62MMHB

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV
Power - Max: -
Operating Temperature: -40°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MMHB

封装: -

库存30

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2000V (2kV)

280A (Tc)

5.3mOhm @ 300A, 18V

5.15V @ 168mA

1170nC @ 18V

36100pF @ 1.2kV

-

-40°C ~ 175°C

Chassis Mount

Module

AG-62MMHB

DMN31D5UDJ-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.22A SOT963

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封装: -

库存20,487

-

30V

220mA (Ta)

1.5Ohm @ 100mA, 4.5V

1V @ 250µA

0.38nC @ 4.5V

22.6pF @ 15V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

MMFTN620KDW

Diotec Semiconductor

MOSFET SOT363 N+N 60V 0.35A 2OHM

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: SOT-363

封装: -

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-

350mA

-

Surface Mount

-

SOT-363

DMP4013SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

NVMFD030N06CT1G

onsemi

MOSFET 2N-CH 60V 7A/19A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Power - Max: 3.2W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

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-

60V

7A (Ta), 19A (Tc)

29.7mOhm @ 3A, 10V

4V @ 13µA

4.7nC @ 10V

255pF @ 30V

3.2W (Ta), 23W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)