页 123 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4801AL	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存150,636	Logic Level Gate	30V	5A	48 mOhm @ 5A, 10V	1.3V @ 250µA	9nC @ 4.5V	780pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1958DH-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 205 mOhm @ 1.3A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存220,452	Logic Level Gate	20V	1.3A	205 mOhm @ 1.3A, 4.5V	1.6V @ 250µA	3.8nC @ 10V	105pF @ 10V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SQ4920EY-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V Power - Max: 4.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,184	Logic Level Gate	30V	8A	14.5 mOhm @ 6A, 10V	2.5V @ 250µA	30nC @ 10V	1465pF @ 15V	4.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN3032LFDBQ-13	Diodes Incorporated	MOSFET 2NCH 30V 6.2A UDFN2020 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存7,552	Standard	30V	6.2A (Ta)	30 mOhm @ 5.8A, 10V	2V @ 250µA	10.6nC @ 10V	500pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMC31D5UDJ-7	Diodes Incorporated	MOSFET N/P-CH 30V SOT963 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封装: SOT-963	库存3,504	Logic Level Gate	30V	220mA, 200mA	1.5 Ohm @ 100mA, 4.5V	1V @ 250µA	0.38nC @ 4.5V	22.6pF @ 15V	350mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
FDMS8090	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 10A PWR56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	封装: 8-PowerWDFN	库存7,376	Logic Level Gate	100V	10A	13 mOhm @ 10A, 10V	4V @ 250µA	27nC @ 10V	1800pF @ 50V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
AO4828	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 60V 4.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存1,678,164	Logic Level Gate	60V	-	56 mOhm @ 4.5A, 10V	3V @ 250µA	10.5nC @ 10V	540pF @ 30V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDMS7620S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	封装: 8-PowerWDFN	库存840,012	Logic Level Gate	30V	10.1A, 12.4A	20 mOhm @ 10.1A, 10V	3V @ 250µA	11nC @ 10V	608pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
UPA2375T1P-E1-A	Renesas Electronics America	MOSFET 2N-CH 24V FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.75W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFLGA Supplier Device Package: 6-EFLIP-LGA	封装: 6-XFLGA	库存3,632	Logic Level Gate, 2.5V Drive	-	-	-	-	-	-	1.75W	150°C (TJ)	Surface Mount	6-XFLGA	6-EFLIP-LGA
CMLDM5757 TR	Central Semiconductor Corp	MOSFET 2P-CH 20V 430MA SOT563 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 430mA Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存27,852	Logic Level Gate	20V	430mA	900 mOhm @ 430mA, 4.5V	1V @ 250µA	1.2nC @ 4.5V	175pF @ 16V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MSCSM120VR1M16CT3AG	Microchip Technology	SIC 2N-CH 1200V 173A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
DMN2012UCA6-7	Diodes Incorporated	MOSFET 2N-CH 24V 13A X3-DSN2718 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 10V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN2718-6	封装: -	Request a Quote	-	24V	13A (Ta)	9mOhm @ 5A, 4.5V	1.3V @ 1mA	26nC @ 4V	2417pF @ 10V	820mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X3-DSN2718-6
TSM250N02DCQ	Taiwan Semiconductor Corporation	MOSFET 2N-CH 20V 5.8A 6TDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 0.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V Power - Max: 620mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-TDFN (2x2)	封装: -	Request a Quote	-	20V	5.8A (Tc)	25mOhm @ 4A, 4.5V	0.8V @ 250µA	11nC @ 4.5V	775pF @ 10V	620mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-TDFN (2x2)
IQE220N15NM5SCATMA1	Infineon Technologies	TRENCH >=100V FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: PG-WHSON-8	封装: -	Request a Quote	-	150V	-	-	-	-	-	-	-	Surface Mount	8-PowerWDFN	PG-WHSON-8
DMN2710UVQ-7	Diodes Incorporated	MOSFET 2N-CH 20V 0.92A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 920mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存12,135	-	20V	920mA (Ta)	450mOhm @ 600mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V	42pF @ 16V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
CTLDM303N-M832DS-BK	Central Semiconductor Corp	MOSFET 2N-CH 30V 3.6A TLM832DS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Power - Max: 1.65W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	封装: -	Request a Quote	-	30V	3.6A (Ta)	40mOhm @ 1.8A, 4.5V	1.25V @ 250µA	13nC @ 4.5V	590pF @ 10V	1.65W	-55°C ~ 150°C (TJ)	Surface Mount	8-TDFN Exposed Pad	TLM832DS
DMC3060LVT-13	Diodes Incorporated	MOSFET N/P-CH 30V 3.6A TSOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6	封装: -	Request a Quote	-	30V	3.6A (Ta), 2.8A (Ta)	60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V	1.8V @ 250µA, 2.1V @ 250µA	11.3nC @ 10V	395pF @ 15V, 324pF @ 15V	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-23-6
AOC3878	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 35A 10DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-AlphaDFN (3.55x1.77)	封装: -	Request a Quote	-	12V	35A (Ta)	2Ohm @ 5A, 4.5V	1.1V @ 250µA	60nC @ 4.5V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	10-AlphaDFN (3.55x1.77)
DMN33D8LVQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.35A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 430mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存29,589	Logic Level Gate	30V	350mA (Ta)	2.4Ohm @ 250mA, 10V	1.5V @ 100µA	1.23nC @ 10V	48pF @ 5V	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN3012LEG-13	Diodes Incorporated	MOSFET 2N-CH 30V 10A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V Power - Max: 2.2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	封装: -	Request a Quote	-	30V	10A (Ta), 20A (Tc)	12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V	2.1V @ 250µA, 1.15V @ 250µA	6.1nC @ 4.5V, 12.6nC @ 4.5V	850pF @ 15V, 1480pF @ 15V	2.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)
PJQ4606_R1_00001	Panjit International Inc.	MOSFET N/P-CH 30V 7.6A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V Power - Max: 2W (Ta), 18W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: DFN3030B-8	封装: -	Request a Quote	-	30V	7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc)	19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V	2.5V @ 250µA	4.8nC @ 4.5V, 7.8nC @ 4.5V	429pF @ 25V, 846pF @ 15V	2W (Ta), 18W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	DFN3030B-8
BSO615CGXUMA1	Infineon Technologies	MOSFET N/P-CH 60V 3.1A/2A 8DSO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封装: -	库存46,761	Logic Level Gate	60V	3.1A (Ta), 2A (Ta)	110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V	2V @ 20µA, 2V @ 450µA	22.5nC @ 10V, 20nC @ 10V	380pF @ 25V, 460pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
QH8M22TCR	Rohm Semiconductor	MOSFET N/P-CH 40V 4.5A/2A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封装: -	库存22,623	-	40V	4.5A (Ta), 2A (Ta)	46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V	2.5V @ 10µA, 3V @ 1mA	2.6nC @ 10V, 9.5nC @ 10V	193pF @ 20V, 450pF @ 20V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
BSS138BKDW-TP	Micro Commercial Co	MOSFET 2N-CH 50V 0.22A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存17,265	-	50V	220mA	1.5Ohm @ 500mA, 10V	1.45V @ 250µA	-	22.8pF @ 25V	350mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMT6011LPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 10.3A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 30V Power - Max: 2.5W (Ta), 37.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	封装: -	Request a Quote	-	60V	10.3A (Ta), 40A (Tc)	14mOhm @ 10A, 10V	2.5V @ 250µA	22.2nC @ 10V	1072pF @ 30V	2.5W (Ta), 37.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
MCQ7328-TP	Micro Commercial Co	MOSFET 2P-CH 30V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存203,232	-	30V	8A	21mOhm @ 8A, 10V	2.5V @ 250µA	78nC @ 10V	2675pF @ 25V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PJQ5850-AU_R2_000A1	Panjit International Inc.	MOSFET 2N-CH 40V 5A/14A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V Power - Max: 2W (Ta), 14.4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	封装: -	Request a Quote	-	40V	5A (Ta), 14A (Tc)	33mOhm @ 8A, 10V	2.5V @ 250µA	4.4nC @ 4.5V	425pF @ 25V	2W (Ta), 14.4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
UPA2550T1H-T2-AT	Renesas Electronics Corporation	MOSFET 2P-CH 12V 5A 8VSOF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V Power - Max: 2.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-VSOF	封装: -	Request a Quote	Logic Level Gate	12V	5A	40mOhm @ 2.5A, 4.5V	1V @ 1mA	8.7nC @ 4V	930pF @ 10V	2.2W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-VSOF
GCMX040A120B2H1P	SemiQ	SIC 1200V 40M MOSFET FULL-BRIDGE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V Power - Max: 217W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	库存60	-	1200V (1.2kV)	56A (Tc)	52mOhm @ 40A, 20V	4V @ 10mA	121nC @ 20V	3200pF @ 800V	217W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
PJX8804_R1_00001	Panjit International Inc.	MOSFET 2N-CH 30V 0.6A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	Request a Quote	-	30V	600mA (Ta)	220mOhm @ 600mA, 4,5V	1.3V @ 250µA	1.5nC @ 4.5V	93pF @ 15V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563

AO4801AL

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存150,636

Logic Level Gate

30V

5A

48 mOhm @ 5A, 10V

1.3V @ 250µA

9nC @ 4.5V

780pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1958DH-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 205 mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存220,452

Logic Level Gate

20V

1.3A

205 mOhm @ 1.3A, 4.5V

1.6V @ 250µA

3.8nC @ 10V

105pF @ 10V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SQ4920EY-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Power - Max: 4.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,184

Logic Level Gate

30V

8A

14.5 mOhm @ 6A, 10V

2.5V @ 250µA

30nC @ 10V

1465pF @ 15V

4.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN3032LFDBQ-13

Diodes Incorporated

MOSFET 2NCH 30V 6.2A UDFN2020

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存7,552

Standard

30V

6.2A (Ta)

30 mOhm @ 5.8A, 10V

2V @ 250µA

10.6nC @ 10V

500pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMC31D5UDJ-7

Diodes Incorporated

MOSFET N/P-CH 30V SOT963

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封装: SOT-963

库存3,504

Logic Level Gate

30V

220mA, 200mA

1.5 Ohm @ 100mA, 4.5V

1V @ 250µA

0.38nC @ 4.5V

22.6pF @ 15V

350mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

FDMS8090

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 10A PWR56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Power - Max: 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

封装: 8-PowerWDFN

库存7,376

Logic Level Gate

100V

10A

13 mOhm @ 10A, 10V

4V @ 250µA

27nC @ 10V

1800pF @ 50V

2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

AO4828

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 4.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存1,678,164

Logic Level Gate

60V

-

56 mOhm @ 4.5A, 10V

3V @ 250µA

10.5nC @ 10V

540pF @ 30V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FDMS7620S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

封装: 8-PowerWDFN

库存840,012

Logic Level Gate

30V

10.1A, 12.4A

20 mOhm @ 10.1A, 10V

3V @ 250µA

11nC @ 10V

608pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

UPA2375T1P-E1-A

Renesas Electronics America

MOSFET 2N-CH 24V

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.75W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Supplier Device Package: 6-EFLIP-LGA

封装: 6-XFLGA

库存3,632

Logic Level Gate, 2.5V Drive

-

1.75W

150°C (TJ)

Surface Mount

6-XFLGA

6-EFLIP-LGA

CMLDM5757 TR

Central Semiconductor Corp

MOSFET 2P-CH 20V 430MA SOT563

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存27,852

Logic Level Gate

20V

430mA

900 mOhm @ 430mA, 4.5V

1V @ 250µA

1.2nC @ 4.5V

175pF @ 16V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

MSCSM120VR1M16CT3AG

Microchip Technology

SIC 2N-CH 1200V 173A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV)

173A (Tc)

16mOhm @ 80A, 20V

2.8V @ 6mA

464nC @ 20V

6040pF @ 1000V

745W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

DMN2012UCA6-7

Diodes Incorporated

MOSFET 2N-CH 24V 13A X3-DSN2718

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 10V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X3-DSN2718-6

封装: -

Request a Quote

-

24V

13A (Ta)

9mOhm @ 5A, 4.5V

1.3V @ 1mA

26nC @ 4V

2417pF @ 10V

820mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X3-DSN2718-6

TSM250N02DCQ

Taiwan Semiconductor Corporation

MOSFET 2N-CH 20V 5.8A 6TDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 0.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
Power - Max: 620mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-TDFN (2x2)

封装: -

Request a Quote

-

20V

5.8A (Tc)

25mOhm @ 4A, 4.5V

0.8V @ 250µA

11nC @ 4.5V

775pF @ 10V

620mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-TDFN (2x2)

IQE220N15NM5SCATMA1

Infineon Technologies

TRENCH >=100V

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: PG-WHSON-8

封装: -

Request a Quote

-

150V

-

Surface Mount

8-PowerWDFN

PG-WHSON-8

DMN2710UVQ-7

Diodes Incorporated

MOSFET 2N-CH 20V 0.92A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存12,135

-

20V

920mA (Ta)

450mOhm @ 600mA, 4.5V

1V @ 250µA

0.6nC @ 4.5V

42pF @ 16V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

CTLDM303N-M832DS-BK

Central Semiconductor Corp

MOSFET 2N-CH 30V 3.6A TLM832DS

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
Power - Max: 1.65W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TDFN Exposed Pad
Supplier Device Package: TLM832DS

封装: -

Request a Quote

-

30V

3.6A (Ta)

40mOhm @ 1.8A, 4.5V

1.25V @ 250µA

13nC @ 4.5V

590pF @ 10V

1.65W

-55°C ~ 150°C (TJ)

Surface Mount

8-TDFN Exposed Pad

TLM832DS

DMC3060LVT-13

Diodes Incorporated

MOSFET N/P-CH 30V 3.6A TSOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6

封装: -

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-

30V

3.6A (Ta), 2.8A (Ta)

60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V

1.8V @ 250µA, 2.1V @ 250µA

11.3nC @ 10V

395pF @ 15V, 324pF @ 15V

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-23-6

AOC3878

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 35A 10DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-AlphaDFN (3.55x1.77)

封装: -

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-

12V

35A (Ta)

2Ohm @ 5A, 4.5V

1.1V @ 250µA

60nC @ 4.5V

-

3.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

10-SMD, No Lead

10-AlphaDFN (3.55x1.77)

DMN33D8LVQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.35A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Power - Max: 430mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存29,589

Logic Level Gate

30V

350mA (Ta)

2.4Ohm @ 250mA, 10V

1.5V @ 100µA

1.23nC @ 10V

48pF @ 5V

430mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN3012LEG-13

Diodes Incorporated

MOSFET 2N-CH 30V 10A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Power - Max: 2.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)

封装: -

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-

30V

10A (Ta), 20A (Tc)

12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V

2.1V @ 250µA, 1.15V @ 250µA

6.1nC @ 4.5V, 12.6nC @ 4.5V

850pF @ 15V, 1480pF @ 15V

2.2W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PowerDI3333-8 (Type D)

PJQ4606_R1_00001

Panjit International Inc.

MOSFET N/P-CH 30V 7.6A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Power - Max: 2W (Ta), 18W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: DFN3030B-8

封装: -

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-

30V

7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc)

19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V

2.5V @ 250µA

4.8nC @ 4.5V, 7.8nC @ 4.5V

429pF @ 25V, 846pF @ 15V

2W (Ta), 18W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

DFN3030B-8

BSO615CGXUMA1

Infineon Technologies

MOSFET N/P-CH 60V 3.1A/2A 8DSO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封装: -

库存46,761

Logic Level Gate

60V

3.1A (Ta), 2A (Ta)

110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V

2V @ 20µA, 2V @ 450µA

22.5nC @ 10V, 20nC @ 10V

380pF @ 25V, 460pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

QH8M22TCR

Rohm Semiconductor

MOSFET N/P-CH 40V 4.5A/2A TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封装: -

库存22,623

-

40V

4.5A (Ta), 2A (Ta)

46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V

2.5V @ 10µA, 3V @ 1mA

2.6nC @ 10V, 9.5nC @ 10V

193pF @ 20V, 450pF @ 20V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

BSS138BKDW-TP

Micro Commercial Co

MOSFET 2N-CH 50V 0.22A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存17,265

-

50V

220mA

1.5Ohm @ 500mA, 10V

1.45V @ 250µA

-

22.8pF @ 25V

350mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMT6011LPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 10.3A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 30V
Power - Max: 2.5W (Ta), 37.9W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

封装: -

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-

60V

10.3A (Ta), 40A (Tc)

14mOhm @ 10A, 10V

2.5V @ 250µA

22.2nC @ 10V

1072pF @ 30V

2.5W (Ta), 37.9W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

MCQ7328-TP

Micro Commercial Co

MOSFET 2P-CH 30V 8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存203,232

-

30V

8A

21mOhm @ 8A, 10V

2.5V @ 250µA

78nC @ 10V

2675pF @ 25V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PJQ5850-AU_R2_000A1

Panjit International Inc.

MOSFET 2N-CH 40V 5A/14A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
Power - Max: 2W (Ta), 14.4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: DFN5060B-8

封装: -

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-

40V

5A (Ta), 14A (Tc)

33mOhm @ 8A, 10V

2.5V @ 250µA

4.4nC @ 4.5V

425pF @ 25V

2W (Ta), 14.4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

DFN5060B-8

UPA2550T1H-T2-AT

Renesas Electronics Corporation

MOSFET 2P-CH 12V 5A 8VSOF

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
Power - Max: 2.2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-VSOF

封装: -

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Logic Level Gate

12V

5A

40mOhm @ 2.5A, 4.5V

1V @ 1mA

8.7nC @ 4V

930pF @ 10V

2.2W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-VSOF

GCMX040A120B2H1P

SemiQ

SIC 1200V 40M MOSFET FULL-BRIDGE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
Power - Max: 217W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

库存60

-

1200V (1.2kV)

56A (Tc)

52mOhm @ 40A, 20V

4V @ 10mA

121nC @ 20V

3200pF @ 800V

217W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

PJX8804_R1_00001

Panjit International Inc.

MOSFET 2N-CH 30V 0.6A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

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-

30V

600mA (Ta)

220mOhm @ 600mA, 4,5V

1.3V @ 250µA

1.5nC @ 4.5V

93pF @ 15V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563