页 89 - 晶体管 - 双极 (BJT) - 单 | 分立半导体产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802

晶体管 - 双极 (BJT) - 单

记录 20,307
页  89/677
图片
零件编号
制造商
描述
封装
库存
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot 2N3564
Central Semiconductor Corp

TRANSISTOR NPN TO-106

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
  • Power - Max: -
  • Frequency - Transition: 400MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-106-3 Domed
  • Supplier Device Package: TO-106
封装: TO-106-3 Domed
库存2,000
-
15V
300mV @ 2mA, 10mA
50nA (ICBO)
20 @ 15mA, 10V
-
400MHz
-
Through Hole
TO-106-3 Domed
TO-106
BC860CW/ZLX
Nexperia USA Inc.

TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3
封装: SC-70, SOT-323
库存4,720
-
-
-
-
-
-
-
-
Surface Mount
SC-70, SOT-323
SC-70-3
JAN2N5415
Microsemi Corporation

TRANS PNP 200V 1A TO-5

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 750mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
封装: TO-205AA, TO-5-3 Metal Can
库存7,232
1A
200V
2V @ 5mA, 50mA
1mA
30 @ 50mA, 10V
750mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
BD239B-S
Bourns Inc.

TRANS NPN 80V 2A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: TO-220-3
库存5,312
2A
80V
700mV @ 200mA, 1A
300µA
15 @ 1A, 4V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
BD682TG
ON Semiconductor

TRANS PNP DARL 100V 4A TO225

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
  • Power - Max: 40W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
封装: TO-225AA, TO-126-3
库存4,160
4A
100V
2.5V @ 30mA, 1.5A
500µA
750 @ 1.5A, 3V
40W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-225AA
BC638ZL1
ON Semiconductor

TRANS PNP 60V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存2,224
500mA
60V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
625mW
150MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
KSC2335Y
Fairchild/ON Semiconductor

TRANS NPN 400V 7A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封装: TO-220-3
库存3,360
7A
400V
1V @ 600mA, 3A
10µA (ICBO)
40 @ 1A, 5V
1.5W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
MPSW06
Fairchild/ON Semiconductor

TRANS NPN 80V 0.5A TO-226

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-226
封装: TO-226-3, TO-92-3 Long Body
库存4,816
500mA
80V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
1W
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-226
ZTX688BSTOA
Diodes Incorporated

TRANS NPN 12V 3A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 20mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
封装: E-Line-3, Formed Leads
库存7,760
3A
12V
350mV @ 20mA, 3A
100nA (ICBO)
500 @ 100mA, 2V
1W
150MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
hot 2SC5729T106R
Rohm Semiconductor

TRANS NPN 30V 0.5A SC70

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
封装: SC-70, SOT-323
库存36,000
500mA
30V
300mV @ 10mA, 100mA
1µA (ICBO)
180 @ 50mA, 2V
200mW
300MHz
-
Surface Mount
SC-70, SOT-323
UMT3
CMPT3019 BK
Central Semiconductor Corp

TRANS NPN 80V 0.5A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 350mW
  • Frequency - Transition: 400MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存4,800
500mA
80V
500mV @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
350mW
400MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
PZT4401,115
Nexperia USA Inc.

TRANS NPN 40V 0.6A SOT-223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
  • Power - Max: 1.15W
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封装: TO-261-4, TO-261AA
库存4,752
600mA
40V
750mV @ 50mA, 500mA
50nA (ICBO)
100 @ 150mA, 1V
1.15W
250MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BCP53-10TX
Nexperia USA Inc.

TRANS PNP 80V 1A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 1.35W
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封装: TO-261-4, TO-261AA
库存6,480
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
1.35W
145MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
FJAF4210YTU
Fairchild/ON Semiconductor

TRANS PNP 140V 10A TO-3PF

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 3A, 4V
  • Power - Max: 80W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-94
  • Supplier Device Package: TO-3PF
封装: SC-94
库存7,600
10A
140V
500mV @ 500mA, 5A
10µA (ICBO)
90 @ 3A, 4V
80W
30MHz
150°C (TJ)
Through Hole
SC-94
TO-3PF
BC846A-TP
Micro Commercial Co

TRANS NPN 65V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 225mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存3,760
100mA
65V
500mV @ 5mA, 100mA
100nA
110 @ 2mA, 5V
225mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot MD2310FX
STMicroelectronics

TRANS NPN 700V 14A TO-3PF

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 14A
  • Voltage - Collector Emitter Breakdown (Max): 700V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1.75A, 7A
  • Current - Collector Cutoff (Max): 200µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 7A, 5V
  • Power - Max: 62W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
封装: TO-3P-3 Full Pack
库存65,460
14A
700V
2.5V @ 1.75A, 7A
200µA
6 @ 7A, 5V
62W
-
150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
ZTX956STZ
Diodes Incorporated

TRANS PNP 200V 2A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 2A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
  • Power - Max: 1.58W
  • Frequency - Transition: 110MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
封装: E-Line-3, Formed Leads
库存4,704
2A
200V
250mV @ 400mA, 2A
50nA (ICBO)
100 @ 1A, 5V
1.58W
110MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
ZXTN2010ASTZ
Diodes Incorporated

TRANS NPN 60V 4.5A TO92-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4.5A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
  • Power - Max: 1W
  • Frequency - Transition: 130MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 Short Body (Formed Leads)
库存47,982
4.5A
60V
210mV @ 200mA, 5A
500nA (ICBO)
100 @ 2A, 1V
1W
130MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body (Formed Leads)
TO-92-3
MMBT2907AT-TP
Micro Commercial Co

TRANS PNP 60V 0.6A SOT-523

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
封装: SOT-523
库存6,336
600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 10mA, 10V
150mW
140MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
2SB560E-MP-AE-SY
Sanyo

PNP EPITAXIAL PLANAR SILICON

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANSR2N5152L
Microchip Technology

RH POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
封装: -
Request a Quote
2 A
80 V
1.5V @ 500mA, 5A
50µA
30 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
BC53PAS-QX
Nexperia USA Inc.

BC53PAS-Q/SOT1061/HUSON3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 420 mW
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-3
封装: -
Request a Quote
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
420 mW
145MHz
150°C (TJ)
Surface Mount
3-UDFN Exposed Pad
DFN2020D-3
NTE31
NTE Electronics, Inc

TRANS NPN 160V 1A TO92L

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 160 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
  • Power - Max: 900 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92L
封装: -
Request a Quote
1 A
160 V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 200mA, 5V
900 mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92L
JANS2N3636L
Microchip Technology

TRANS PNP 175V 1A TO5

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 175 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
封装: -
Request a Quote
1 A
175 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
2N6058
Microchip Technology

PNP POWER TRANSISTOR SILICON AMP

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SD1899-K-TP
Micro Commercial Co

TRANS NPN 60V 3A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 150mA, 1.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 600mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
封装: -
Request a Quote
3 A
60 V
250mV @ 150mA, 1.5A
10µA (ICBO)
200 @ 600mA, 2V
1 W
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
BC858AW_R1_00001
Panjit International Inc.

TRANS PNP 30V 0.1A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封装: -
Request a Quote
100 mA
30 V
650mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
250 mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
2N2905-PBFREE
Central Semiconductor Corp

TRANS PNP 40V 0.6A TO39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 3 W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
封装: -
Request a Quote
600 mA
40 V
1.6V @ 50mA, 500mA
20nA (ICBO)
100 @ 150mA, 10V
3 W
200MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
MMBTA06-TP-HF
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: -
Request a Quote
500 mA
80 V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2N4424-PBFREE
Central Semiconductor Corp

TRANS NPN 40V 0.5A TO92-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
  • Current - Collector Cutoff (Max): 30nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
  • Power - Max: 625 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: -
库存22,236
500 mA
40 V
300mV @ 3mA, 50mA
30nA
180 @ 2mA, 4.5V
625 mW
-
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3