页 640 - 晶体管 - 双极 (BJT) - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JAN2N6353	Microsemi Corporation	TRANS NPN DARL 150V 5A TO-33 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-3 Supplier Device Package: TO-66 (TO-213AA)	封装: TO-213AA, TO-66-3	库存7,456	5A	150V	2.5V @ 10mA, 5A	-	1000 @ 5A, 5V	2W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-3	TO-66 (TO-213AA)
JANTX2N3585	Microsemi Corporation	TRANS NPN 300V 2A TO-66 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V Power - Max: 2.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	封装: TO-213AA, TO-66-2	库存6,528	2A	300V	750mV @ 125mA, 1A	5mA	25 @ 1A, 10V	2.5W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
JAN2N3250A	Microsemi Corporation	TRANS PNP 60V 0.2A TO-39 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	封装: TO-205AD, TO-39-3 Metal Can	库存7,184	200mA	60V	500mV @ 5mA, 50mA	10µA (ICBO)	50 @ 10mA, 1V	360mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JAN2N1016C	Microsemi Corporation	TRANS NPN 150V 7.5A Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,448	-	-	-	-	-	-	-	-	-	-	-
JAN2N1482	Microsemi Corporation	TRANS NPN 55V 1.5A TO-5 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 55V Vce Saturation (Max) @ Ib, Ic: 750mV @ 10mA, 200mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 4V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	封装: TO-205AA, TO-5-3 Metal Can	库存3,680	1.5A	55V	750mV @ 10mA, 200mA	5µA (ICBO)	35 @ 200mA, 4V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
KSD1408GTU	Fairchild/ON Semiconductor	TRANS NPN 80V 4A TO-220F Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A Current - Collector Cutoff (Max): 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Power - Max: 25W Frequency - Transition: 8MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	封装: TO-220-3 Full Pack	库存5,200	4A	80V	1.5V @ 300mA, 3A	30µA (ICBO)	40 @ 500mA, 5V	25W	8MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
KSA940	Fairchild/ON Semiconductor	TRANS PNP 150V 1.5A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V Power - Max: 1.5W Frequency - Transition: 4MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	封装: TO-220-3	库存377,448	1.5A	150V	1.5V @ 50mA, 500mA	10µA (ICBO)	40 @ 500mA, 10V	1.5W	4MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
KSA812LMTF	Fairchild/ON Semiconductor	TRANS PNP 50V 0.1A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存1,156,860	100mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	300 @ 1mA, 6V	150mW	180MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BUV98AV	STMicroelectronics	TRANS NPN 450V 30A ISOTOP Transistor Type: NPN Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 450V Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 24A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 24A, 5V Power - Max: 150W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP Supplier Device Package: ISOTOP?	封装: ISOTOP	库存3,408	30A	450V	5V @ 5A, 24A	-	9 @ 24A, 5V	150W	-	150°C (TJ)	Chassis Mount	ISOTOP	ISOTOP?
BC368_D27Z	Fairchild/ON Semiconductor	TRANS NPN 20V 2A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 625mW Frequency - Transition: 45MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	库存7,536	2A	20V	500mV @ 100mA, 1A	10µA (ICBO)	85 @ 500mA, 1V	625mW	45MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC546TA	Fairchild/ON Semiconductor	TRANS NPN 65V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	库存5,200	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	500mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC309ABU	Fairchild/ON Semiconductor	TRANS PNP 25V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA)	库存2,144	100mA	25V	500mV @ 5mA, 100mA	15nA	120 @ 2mA, 5V	500mW	130MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
SMBTA14E6327HTSA1	Infineon Technologies	TRANS NPN DARL 30V 0.3A SOT-23 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Power - Max: 330mW Frequency - Transition: 125MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存7,184	300mA	30V	1.5V @ 100µA, 100mA	100nA (ICBO)	20000 @ 100mA, 5V	330mW	125MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
NJVMJD243T4G	ON Semiconductor	TRANS NPN 100V 4A DPAK-4 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Power - Max: 1.4W Frequency - Transition: 40MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,344	4A	100V	600mV @ 100mA, 1A	100nA (ICBO)	40 @ 200mA, 1V	1.4W	40MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
DCP69A-16-13	Diodes Incorporated	TRANS PNP 20V 1A SOT-223 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 1W Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封装: TO-261-4, TO-261AA	库存34,800	1A	20V	500mV @ 100mA, 1A	100nA (ICBO)	85 @ 500mA, 1V	1W	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
PZTA42,115	Nexperia USA Inc.	TRANS NPN 300V 0.1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 1.2W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封装: TO-261-4, TO-261AA	库存3,200	100mA	300V	500mV @ 2mA, 20mA	20nA (ICBO)	40 @ 30mA, 10V	1.2W	50MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BC807-25LT3G	ON Semiconductor	TRANS PNP 45V 0.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封装: TO-236-3, SC-59, SOT-23-3	库存22,620	500mA	45V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	300mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SB1412TLQ	Rohm Semiconductor	TRANS PNP 20V 5A SOT-428 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存464,868	5A	20V	1V @ 100mA, 4A	500nA (ICBO)	120 @ 500mA, 2V	1W	120MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	CPT3
2SD1247T-AE	onsemi	TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1 W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: 3-MP	封装: -	Request a Quote	2.5 A	25 V	400mV @ 75mA, 1.5A	100nA (ICBO)	200 @ 100mA, 2V	1 W	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	3-MP
JAN2N3500U4	Microchip Technology	TRANS NPN 150V 0.3A U4 Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	封装: -	Request a Quote	300 mA	150 V	400mV @ 15mA, 150mA	50nA (ICBO)	40 @ 150mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
2C2946A	Microchip Technology	TRANSISTOR SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANHCB2N3440	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	封装: -	Request a Quote	1 A	250 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-55°C ~ 200°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
PMBT2222AMBYL	Nexperia USA Inc.	TRANS NPN 40V 0.6A DFN1006B-3 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 250 mW Frequency - Transition: 340MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: DFN1006B-3	封装: -	库存89,232	600 mA	40 V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	250 mW	340MHz	150°C (TJ)	Surface Mount	3-XFDFN	DFN1006B-3
JAN2N497S	Microchip Technology	NPN TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANSP2N3019S	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	封装: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANS2N3741	Microchip Technology	TRANS PNP 80V 4A TO66 Transistor Type: PNP Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 1.25mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Power - Max: 25 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	封装: -	Request a Quote	4 A	80 V	600mV @ 1.25mA, 1A	10µA	30 @ 250mA, 1V	25 W	-	-55°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
2N6285	Microchip Technology	POWER BJT Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V Power - Max: 160 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	20 A	60 V	3V @ 200mA, 20A	1mA	750 @ 10A, 3V	160 W	-	-65°C ~ 200°C (TJ)	Surface Mount	Die	Die
MMBT3904-QVL	Nexperia USA Inc.	MMBT3904-Q/SOT23/TO-236AB Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 250 mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封装: -	Request a Quote	200 mA	40 V	300mV @ 5mA, 50mA	50nA (ICBO)	100 @ 10mA, 1V	250 mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BC850C_R1_00001	Panjit International Inc.	TRANS NPN 45V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 330 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: -	库存7,785	100 mA	45 V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	330 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2N7372	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 4 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254AA	封装: -	Request a Quote	5 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	4 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-254-3, TO-254AA	TO-254AA

JAN2N6353

Microsemi Corporation

TRANS NPN DARL 150V 5A TO-33

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-3
Supplier Device Package: TO-66 (TO-213AA)

封装: TO-213AA, TO-66-3

库存7,456

5A

150V

2.5V @ 10mA, 5A

-

1000 @ 5A, 5V

2W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-3

TO-66 (TO-213AA)

JANTX2N3585

Microsemi Corporation

TRANS NPN 300V 2A TO-66

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Power - Max: 2.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

封装: TO-213AA, TO-66-2

库存6,528

2A

300V

750mV @ 125mA, 1A

5mA

25 @ 1A, 10V

2.5W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

JAN2N3250A

Microsemi Corporation

TRANS PNP 60V 0.2A TO-39

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Power - Max: 360mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

封装: TO-205AD, TO-39-3 Metal Can

库存7,184

200mA

60V

500mV @ 5mA, 50mA

10µA (ICBO)

50 @ 10mA, 1V

360mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JAN2N1016C

Microsemi Corporation

TRANS NPN 150V 7.5A

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,448

-

JAN2N1482

Microsemi Corporation

TRANS NPN 55V 1.5A TO-5

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 55V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 4V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

封装: TO-205AA, TO-5-3 Metal Can

库存3,680

1.5A

55V

750mV @ 10mA, 200mA

5µA (ICBO)

35 @ 200mA, 4V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

KSD1408GTU

Fairchild/ON Semiconductor

TRANS NPN 80V 4A TO-220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Power - Max: 25W
Frequency - Transition: 8MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

封装: TO-220-3 Full Pack

库存5,200

4A

80V

1.5V @ 300mA, 3A

30µA (ICBO)

40 @ 500mA, 5V

25W

8MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

KSA940

Fairchild/ON Semiconductor

TRANS PNP 150V 1.5A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Power - Max: 1.5W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

封装: TO-220-3

库存377,448

1.5A

150V

1.5V @ 50mA, 500mA

10µA (ICBO)

40 @ 500mA, 10V

1.5W

4MHz

150°C (TJ)

Through Hole

TO-220-3

KSA812LMTF

Fairchild/ON Semiconductor

TRANS PNP 50V 0.1A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存1,156,860

100mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

300 @ 1mA, 6V

150mW

180MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BUV98AV

STMicroelectronics

TRANS NPN 450V 30A ISOTOP

Transistor Type: NPN
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 24A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 24A, 5V
Power - Max: 150W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP?

封装: ISOTOP

库存3,408

30A

450V

5V @ 5A, 24A

-

9 @ 24A, 5V

150W

-

150°C (TJ)

Chassis Mount

ISOTOP

ISOTOP?

BC368_D27Z

Fairchild/ON Semiconductor

TRANS NPN 20V 2A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 625mW
Frequency - Transition: 45MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存7,536

2A

20V

500mV @ 100mA, 1A

10µA (ICBO)

85 @ 500mA, 1V

625mW

45MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC546TA

Fairchild/ON Semiconductor

TRANS NPN 65V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存5,200

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

500mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC309ABU

Fairchild/ON Semiconductor

TRANS PNP 25V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

库存2,144

100mA

25V

500mV @ 5mA, 100mA

15nA

120 @ 2mA, 5V

500mW

130MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

SMBTA14E6327HTSA1

Infineon Technologies

TRANS NPN DARL 30V 0.3A SOT-23

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 330mW
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存7,184

300mA

30V

1.5V @ 100µA, 100mA

100nA (ICBO)

20000 @ 100mA, 5V

330mW

125MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

NJVMJD243T4G

ON Semiconductor

TRANS NPN 100V 4A DPAK-4

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Power - Max: 1.4W
Frequency - Transition: 40MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,344

4A

100V

600mV @ 100mA, 1A

100nA (ICBO)

40 @ 200mA, 1V

1.4W

40MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

DCP69A-16-13

Diodes Incorporated

TRANS PNP 20V 1A SOT-223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 1W
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

库存34,800

1A

20V

500mV @ 100mA, 1A

100nA (ICBO)

85 @ 500mA, 1V

1W

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

PZTA42,115

Nexperia USA Inc.

TRANS NPN 300V 0.1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 1.2W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

库存3,200

100mA

300V

500mV @ 2mA, 20mA

20nA (ICBO)

40 @ 30mA, 10V

1.2W

50MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BC807-25LT3G

ON Semiconductor

TRANS PNP 45V 0.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封装: TO-236-3, SC-59, SOT-23-3

库存22,620

500mA

45V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

300mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SB1412TLQ

Rohm Semiconductor

TRANS PNP 20V 5A SOT-428

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存464,868

5A

20V

1V @ 100mA, 4A

500nA (ICBO)

120 @ 500mA, 2V

1W

120MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

CPT3

2SD1247T-AE

onsemi

TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1 W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: 3-MP

封装: -

Request a Quote

2.5 A

25 V

400mV @ 75mA, 1.5A

100nA (ICBO)

200 @ 100mA, 2V

1 W

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

3-MP

JAN2N3500U4

Microchip Technology

TRANS NPN 150V 0.3A U4

Transistor Type: NPN
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

封装: -

Request a Quote

300 mA

150 V

400mV @ 15mA, 150mA

50nA (ICBO)

40 @ 150mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

2C2946A

Microchip Technology

TRANSISTOR SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

JANHCB2N3440

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

封装: -

Request a Quote

1 A

250 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-55°C ~ 200°C

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

PMBT2222AMBYL

Nexperia USA Inc.

TRANS NPN 40V 0.6A DFN1006B-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 250 mW
Frequency - Transition: 340MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: DFN1006B-3

封装: -

库存89,232

600 mA

40 V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

250 mW

340MHz

150°C (TJ)

Surface Mount

3-XFDFN

DFN1006B-3

JAN2N497S

Microchip Technology

NPN TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

JANSP2N3019S

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

封装: -

Request a Quote

1 A

80 V

500mV @ 50mA, 500mA

10nA

100 @ 150mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANS2N3741

Microchip Technology

TRANS PNP 80V 4A TO66

Transistor Type: PNP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 1.25mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Power - Max: 25 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

封装: -

Request a Quote

4 A

80 V

600mV @ 1.25mA, 1A

10µA

30 @ 250mA, 1V

25 W

-

-55°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

2N6285

Microchip Technology

POWER BJT

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Power - Max: 160 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

Request a Quote

20 A

60 V

3V @ 200mA, 20A

1mA

750 @ 10A, 3V

160 W

-

-65°C ~ 200°C (TJ)

Surface Mount

Die

MMBT3904-QVL

Nexperia USA Inc.

MMBT3904-Q/SOT23/TO-236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 250 mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封装: -

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200 mA

40 V

300mV @ 5mA, 50mA

50nA (ICBO)

100 @ 10mA, 1V

250 mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BC850C_R1_00001

Panjit International Inc.

TRANS NPN 45V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 330 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: -

库存7,785

100 mA

45 V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

330 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2N7372

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 4 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA
Supplier Device Package: TO-254AA

封装: -

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5 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

4 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-254-3, TO-254AA

TO-254AA