页 369 - 晶体管 - 双极 (BJT) - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - 双极 (BJT) - 单

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零件编号
制造商
描述
封装
库存
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JANTX2N3743
Microsemi Corporation

TRANS PNP 300V 0.2A TO-39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
封装: TO-205AD, TO-39-3 Metal Can
库存2,336
200mA
300V
1.2V @ 3mA, 30mA
250nA (ICBO)
50 @ 30mA, 10V
1W
-
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
BC368G
ON Semiconductor

TRANS NPN 20V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 65MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存6,320
1A
20V
500mV @ 100mA, 1A
10µA (ICBO)
85 @ 500mA, 1V
625mW
65MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot KSC2688YSTU
Fairchild/ON Semiconductor

TRANS NPN 300V 0.2A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Power - Max: 1.25W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126-3
封装: TO-225AA, TO-126-3
库存341,268
200mA
300V
1.5V @ 5mA, 50mA
100µA (ICBO)
100 @ 10mA, 10V
1.25W
80MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
2N5400_D27Z
Fairchild/ON Semiconductor

TRANS PNP 120V 0.6A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 400MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存3,104
600mA
120V
500mV @ 5mA, 50mA
100nA (ICBO)
40 @ 10mA, 5V
625mW
400MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2SA1162S-Y, LF(D
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
封装: TO-236-3, SC-59, SOT-23-3
库存7,376
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
150mW
80MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
BC337-25,126
NXP

TRANS NPN 45V 0.5A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存3,664
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
160 @ 100mA, 1V
625mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot 2SB1011
Panasonic Electronic Components

TRANS PNP 400V 0.1A TO-126

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 5V
  • Power - Max: 1.2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126B-A1
封装: TO-225AA, TO-126-3
库存5,936
100mA
400V
2.5V @ 5mA, 50mA
-
30 @ 30mA, 5V
1.2W
70MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126B-A1
2N6729
Fairchild/Micross Components

DIE TRANS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,320
-
-
-
-
-
-
-
-
-
-
-
PN4033
Central Semiconductor Corp

TRANS PNP 80V 1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 400MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
封装: TO-226-3, TO-92-3 (TO-226AA)
库存2,384
1A
80V
500mV @ 50mA, 500mA
50nA (ICBO)
100 @ 100mA, 5V
625mW
400MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
BC547C-AP
Micro Commercial Co

TRANS NPN 45V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存3,184
100mA
45V
300mV @ 5mA, 100mA
-
420 @ 2mA, 5V
625mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92
BC56PA,115
Nexperia USA Inc.

TRANSISTOR NPN 80V 1A SOT1061

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 420mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN
  • Supplier Device Package: 3-HUSON (2x2)
封装: 3-UDFN
库存2,592
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
420mW
180MHz
150°C (TJ)
Surface Mount
3-UDFN
3-HUSON (2x2)
hot MSB92ASWT1G
ON Semiconductor

TRANS PNP 300V 0.5A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
封装: SC-70, SOT-323
库存516,000
500mA
300V
500mV @ 2mA, 20mA
250nA (ICBO)
120 @ 1mA, 10V
150mW
50MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70-3 (SOT323)
PMBT4403YSX
Nexperia USA Inc.

TRANS PNP 40V 0.6A SC-881

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 250mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封装: TO-236-3, SC-59, SOT-23-3
库存4,464
600mA
40V
750mV @ 50mA, 500mA
50nA (ICBO)
100 @ 10mA, 1V
250mW
200MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
hot 2SD2351T106W
Rohm Semiconductor

TRANS NPN 50V 0.15A SOT-323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 300nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
封装: SC-70, SOT-323
库存7,269,600
150mA
50V
300mV @ 5mA, 50mA
300nA (ICBO)
820 @ 1mA, 5V
200mW
250MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
UMT3
hot 2SC4468
Sanken

TRANS NPN 140V 10A TO3P

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
  • Power - Max: 100W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存18,732
10A
140V
500mV @ 500mA, 5A
10µA (ICBO)
50 @ 3A, 4V
100W
20MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
FGP3040G2
Fairchild Semiconductor

IGBT 41A, 390V, N CHANNEL

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANSR2N5154U3
Microchip Technology

TRANS NPN 80V 0.001A U3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U3 (SMD-0.5)
封装: -
Request a Quote
1 mA
80 V
1.5V @ 500mA, 5A
1mA
70 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U3 (SMD-0.5)
JANSR2N2907AUBC
Microchip Technology

TRANS PNP 60V 0.6A UBC

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-CLCC
  • Supplier Device Package: UBC
封装: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-CLCC
UBC
JANSD2N3439UA
Microchip Technology

TRANS NPN 350V 1A UA

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
封装: -
Request a Quote
1 A
350 V
500mV @ 4mA, 50mA
2µA
40 @ 20mA, 10V
800 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UA
JANSM2N2221AUBC-TR
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UBC
封装: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UBC
JANS2N2907AUA
Microchip Technology

TRANS PNP 60V 0.6A UA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
封装: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 1mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UA
B772-O-TP
Micro Commercial Co

TRANS PNP 30V 3A DPAK

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
  • Power - Max: 1.25 W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
封装: -
Request a Quote
3 A
30 V
500mV @ 200mA, 2A
10µA
100 @ 1A, 2V
1.25 W
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
NTE30
NTE Electronics, Inc

TRANS PNP 80V 50A TO3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
  • Power - Max: 300 W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
封装: -
Request a Quote
50 A
80 V
5V @ 10A, 50A
1mA
15 @ 25A, 2V
300 W
2MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
BCX55-16-QX
Nexperia USA Inc.

BCX55-16-Q/SOT89/MPT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封装: -
Request a Quote
1 A
60 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
500 mW
180MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
2N5429
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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BC848AHE3-TP
Micro Commercial Co

NPN TRANSISTORS, SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 225 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: -
库存18,000
100 mA
30 V
500mV @ 5mA, 100mA
100nA
110 @ 2mA, 5V
225 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SC4080E-TD-E
onsemi

2SC4080 - NPN EPITAXIAL PLANAR S

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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MJH16006A
onsemi

TRANS GP BJT NPN 500V 8A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
  • Current - Collector Cutoff (Max): 150µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 8A, 5V
  • Power - Max: 125 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3
  • Supplier Device Package: SOT-93 (TO-218)
封装: -
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8 A
500 V
1V @ 1A, 5A
150µA
5 @ 8A, 5V
125 W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-218-3
SOT-93 (TO-218)
NTE328
NTE Electronics, Inc

TRANS NPN 120V 25A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 25 A
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 2V
  • Power - Max: 200 W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
封装: -
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25 A
120 V
1.8V @ 2.5A, 25A
50µA
50 @ 500mA, 2V
200 W
40MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
JANSF2N2906AL
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
封装: -
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600 mA
60 V
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)