页 365 - 晶体管 - 双极 (BJT) - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSP 60 E6433	Infineon Technologies	TRANS PNP DARL 45V 1A SOT-223 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1.5W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	封装: TO-261-4, TO-261AA	库存4,384	1A	45V	1.8V @ 1mA, 1A	10µA	2000 @ 500mA, 10V	1.5W	200MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
BDT60C-S	Bourns Inc.	TRANS PNP DARL 120V 4A Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	封装: TO-220-3	库存6,176	4A	120V	2.5V @ 6mA, 1.5A	500µA	750 @ 1.5A, 3V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
STD826T4	STMicroelectronics	TRANS PNP 30V 3A DPAK Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Power - Max: 15W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,560	3A	30V	1.1V @ 150mA, 3A	100µA	100 @ 100mA, 2V	15W	100MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
FJP3305TU	Fairchild/ON Semiconductor	TRANS NPN 400V 4A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1A, 5V Power - Max: 75W Frequency - Transition: 4MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	封装: TO-220-3	库存6,720	4A	400V	1V @ 1A, 4A	1µA (ICBO)	19 @ 1A, 5V	75W	4MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
KSC3953CS	Fairchild/ON Semiconductor	TRANS NPN 120V 0.2A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Power - Max: 1.3W Frequency - Transition: 400MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	封装: TO-225AA, TO-126-3	库存5,888	200mA	120V	1V @ 3mA, 30mA	100nA (ICBO)	40 @ 10mA, 10V	1.3W	400MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
KSC2500CTA	Fairchild/ON Semiconductor	TRANS NPN 10V 2A TO-92L Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V Power - Max: 900mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 Long Body (Formed Leads)	库存3,488	2A	10V	500mV @ 50mA, 2A	100nA (ICBO)	300 @ 500mA, 1V	900mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-92-3
ZTX557STOB	Diodes Incorporated	TRANS PNP 300V 0.5A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1W Frequency - Transition: 75MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	封装: E-Line-3, Formed Leads	库存6,464	500mA	300V	300mV @ 5mA, 50mA	100nA (ICBO)	50 @ 50mA, 10V	1W	75MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
BD1766STU	Fairchild/ON Semiconductor	TRANS PNP 45V 3A TO-126 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 30W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	封装: TO-225AA, TO-126-3	库存6,048	3A	45V	800mV @ 100mA, 1A	100µA (ICBO)	40 @ 150mA, 2V	30W	3MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
TIP48	STMicroelectronics	TRANS NPN 300V 1A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Power - Max: 2W Frequency - Transition: 10MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封装: TO-220-3	库存34,764	1A	300V	1V @ 200mA, 1A	1mA	30 @ 300mA, 10V	2W	10MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
JANTXV2N3998	Microsemi Corporation	TRANS NPN 80V 10A TO59 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	封装: TO-210AA, TO-59-4, Stud	库存2,288	10A	80V	2V @ 500mA, 5A	10µA	40 @ 1A, 2V	2W	-	-65°C ~ 200°C (TJ)	Chassis, Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
2SA1552T-E	ON Semiconductor	TRANS PNP 160V 1.5A TP Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,992	1.5A	160V	500mV @ 50mA, 500mA	1µA (ICBO)	200 @ 100mA, 5V	1W	120MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	2-TP-FA
QST2TR	Rohm Semiconductor	TRANS PNP 12V 6A TSMT6 Transistor Type: PNP Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Power - Max: 1.25W Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95)	封装: SOT-23-6 Thin, TSOT-23-6	库存7,136	6A	12V	250mV @ 60mA, 3A	100nA (ICBO)	270 @ 500mA, 2V	1.25W	250MHz	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)
2SA2142-TE16L1-NQ	Toshiba Semiconductor and Storage	TRANS PNP 600V PW-MOLD Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 600 V Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Power - Max: 1 W Frequency - Transition: 35MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	封装: -	库存6,708	500 mA	600 V	1V @ 10mA, 100mA	10µA (ICBO)	100 @ 50mA, 5V	1 W	35MHz	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PW-MOLD
FZT705QTA	Diodes Incorporated	TRANS PNP 120V 0.05A SST3 Transistor Type: PNP Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 200 mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-3	封装: -	Request a Quote	50 mA	120 V	500mV @ 1mA, 10mA	500nA (ICBO)	180 @ 2mA, 6V	200 mW	140MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-3
BSR19A-QR	Nexperia USA Inc.	BSR19A-Q/SOT23/TO-236AB Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 250 mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	封装: -	Request a Quote	300 mA	160 V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	250 mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
BC850C-QR	Nexperia USA Inc.	BC850C-Q/SOT23/TO-236AB Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封装: -	Request a Quote	100 mA	45 V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	250 mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SC5876U3T106	Rohm Semiconductor	TRANS NPN 60V 0.5A UMT3 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Power - Max: 200 mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封装: -	库存61,584	500 mA	60 V	300mV @ 10mA, 100mA	1µA (ICBO)	120 @ 50mA, 2V	200 mW	300MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	UMT3
JANTXV2N1890S	Microchip Technology	TRANS NPN 80V 0.5A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	封装: -	Request a Quote	500 mA	80 V	5V @ 15mA, 150mA	10nA (ICBO)	100 @ 150mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANSP2N5154L	Microchip Technology	RH POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	封装: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
NTE37MCP	NTE Electronics, Inc	TRANS PNP 140V 12A TO3P Transistor Type: PNP Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 1.1V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V Power - Max: 100 W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	封装: -	Request a Quote	12 A	140 V	1.1V @ 500mA, 5A	100µA	60 @ 1A, 5V	100 W	15MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
PXT2222A-TP	Micro Commercial Co	Interface Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: - Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封装: -	Request a Quote	600 mA	40 V	1V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	-	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
JANTXV2N335A	Microchip Technology	TRANS NPN 45V 0.01A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 10 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	封装: -	Request a Quote	10 mA	45 V	-	-	-	-	-	175°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
MSB92AWT1	onsemi	TRANS PNP 300V 0.5A SC70-3 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 10V Power - Max: 150 mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	封装: -	Request a Quote	500 mA	300 V	500mV @ 2mA, 20mA	250nA (ICBO)	120 @ 1mA, 10V	150 mW	50MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
2N4909	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 150 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	封装: -	Request a Quote	10 A	80 V	-	-	-	150 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
JANTXV2N6212	Microchip Technology	TRANS PNP 300V 0.005A TO66 Transistor Type: PNP Current - Collector (Ic) (Max): 5 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V Power - Max: 3 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TA) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	封装: -	Request a Quote	5 mA	300 V	1.6V @ 125mA, 1A	5mA	30 @ 1A, 5V	3 W	-	-55°C ~ 200°C (TA)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
JANSF2N2222AUA	Microchip Technology	TRANS NPN 50V 0.8A UA Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 650 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	封装: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	650 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
BC817K-16	Diotec Semiconductor	IC Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 500 mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封装: -	Request a Quote	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 1V	500 mW	170MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
SJ83180	onsemi	BIP T03 NPN SPECIAL Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2C2060	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BC857BWE6327	Infineon Technologies	BIPOLAR GEN PURPOSE TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323	封装: -	Request a Quote	100 mA	45 V	650mV @ 5mA, 100mA	15nA (ICBO)	220 @ 2mA, 5V	250 mW	250MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323

BSP 60 E6433

Infineon Technologies

TRANS PNP DARL 45V 1A SOT-223

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.5W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

封装: TO-261-4, TO-261AA

库存4,384

1A

45V

1.8V @ 1mA, 1A

10µA

2000 @ 500mA, 10V

1.5W

200MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

BDT60C-S

Bourns Inc.

TRANS PNP DARL 120V 4A

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

封装: TO-220-3

库存6,176

4A

120V

2.5V @ 6mA, 1.5A

500µA

750 @ 1.5A, 3V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

STD826T4

STMicroelectronics

TRANS PNP 30V 3A DPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Power - Max: 15W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,560

3A

30V

1.1V @ 150mA, 3A

100µA

100 @ 100mA, 2V

15W

100MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

FJP3305TU

Fairchild/ON Semiconductor

TRANS NPN 400V 4A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1A, 5V
Power - Max: 75W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

封装: TO-220-3

库存6,720

4A

400V

1V @ 1A, 4A

1µA (ICBO)

19 @ 1A, 5V

75W

4MHz

150°C (TJ)

Through Hole

TO-220-3

KSC3953CS

Fairchild/ON Semiconductor

TRANS NPN 120V 0.2A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Power - Max: 1.3W
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

封装: TO-225AA, TO-126-3

库存5,888

200mA

120V

1V @ 3mA, 30mA

100nA (ICBO)

40 @ 10mA, 10V

1.3W

400MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

KSC2500CTA

Fairchild/ON Semiconductor

TRANS NPN 10V 2A TO-92L

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 10V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V
Power - Max: 900mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 Long Body (Formed Leads)

库存3,488

2A

10V

500mV @ 50mA, 2A

100nA (ICBO)

300 @ 500mA, 1V

900mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-92-3

ZTX557STOB

Diodes Incorporated

TRANS PNP 300V 0.5A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: 75MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

封装: E-Line-3, Formed Leads

库存6,464

500mA

300V

300mV @ 5mA, 50mA

100nA (ICBO)

50 @ 50mA, 10V

1W

75MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

BD1766STU

Fairchild/ON Semiconductor

TRANS PNP 45V 3A TO-126

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

封装: TO-225AA, TO-126-3

库存6,048

3A

45V

800mV @ 100mA, 1A

100µA (ICBO)

40 @ 150mA, 2V

30W

3MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

TIP48

STMicroelectronics

TRANS NPN 300V 1A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 2W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封装: TO-220-3

库存34,764

1A

300V

1V @ 200mA, 1A

1mA

30 @ 300mA, 10V

2W

10MHz

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

JANTXV2N3998

Microsemi Corporation

TRANS NPN 80V 10A TO59

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

封装: TO-210AA, TO-59-4, Stud

库存2,288

10A

80V

2V @ 500mA, 5A

10µA

40 @ 1A, 2V

2W

-

-65°C ~ 200°C (TJ)

Chassis, Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

2SA1552T-E

ON Semiconductor

TRANS PNP 160V 1.5A TP

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,992

1.5A

160V

500mV @ 50mA, 500mA

1µA (ICBO)

200 @ 100mA, 5V

1W

120MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

2-TP-FA

QST2TR

Rohm Semiconductor

TRANS PNP 12V 6A TSMT6

Transistor Type: PNP
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Power - Max: 1.25W
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSMT6 (SC-95)

封装: SOT-23-6 Thin, TSOT-23-6

库存7,136

6A

12V

250mV @ 60mA, 3A

100nA (ICBO)

270 @ 500mA, 2V

1.25W

250MHz

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSMT6 (SC-95)

2SA2142-TE16L1-NQ

Toshiba Semiconductor and Storage

TRANS PNP 600V PW-MOLD

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Power - Max: 1 W
Frequency - Transition: 35MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

封装: -

库存6,708

500 mA

600 V

1V @ 10mA, 100mA

10µA (ICBO)

100 @ 50mA, 5V

1 W

35MHz

150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

PW-MOLD

FZT705QTA

Diodes Incorporated

TRANS PNP 120V 0.05A SST3

Transistor Type: PNP
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Power - Max: 200 mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3

封装: -

Request a Quote

50 mA

120 V

500mV @ 1mA, 10mA

500nA (ICBO)

180 @ 2mA, 6V

200 mW

140MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-3

BSR19A-QR

Nexperia USA Inc.

BSR19A-Q/SOT23/TO-236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 250 mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

封装: -

Request a Quote

300 mA

160 V

200mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

250 mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

BC850C-QR

Nexperia USA Inc.

BC850C-Q/SOT23/TO-236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封装: -

Request a Quote

100 mA

45 V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

250 mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SC5876U3T106

Rohm Semiconductor

TRANS NPN 60V 0.5A UMT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Power - Max: 200 mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封装: -

库存61,584

500 mA

60 V

300mV @ 10mA, 100mA

1µA (ICBO)

120 @ 50mA, 2V

200 mW

300MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

UMT3

JANTXV2N1890S

Microchip Technology

TRANS NPN 80V 0.5A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

封装: -

Request a Quote

500 mA

80 V

5V @ 15mA, 150mA

10nA (ICBO)

100 @ 150mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANSP2N5154L

Microchip Technology

RH POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

封装: -

Request a Quote

2 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

NTE37MCP

NTE Electronics, Inc

TRANS PNP 140V 12A TO3P

Transistor Type: PNP
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Power - Max: 100 W
Frequency - Transition: 15MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

封装: -

Request a Quote

12 A

140 V

1.1V @ 500mA, 5A

100µA

60 @ 1A, 5V

100 W

15MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

PXT2222A-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: -
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封装: -

Request a Quote

600 mA

40 V

1V @ 50mA, 500mA

10nA

100 @ 150mA, 10V

-

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

JANTXV2N335A

Microchip Technology

TRANS NPN 45V 0.01A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

封装: -

Request a Quote

10 mA

45 V

-

175°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

MSB92AWT1

onsemi

TRANS PNP 300V 0.5A SC70-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 10V
Power - Max: 150 mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

封装: -

Request a Quote

500 mA

300 V

500mV @ 2mA, 20mA

250nA (ICBO)

120 @ 1mA, 10V

150 mW

50MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

2N4909

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 150 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

封装: -

Request a Quote

10 A

80 V

-

150 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

JANTXV2N6212

Microchip Technology

TRANS PNP 300V 0.005A TO66

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
Power - Max: 3 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TA)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

封装: -

Request a Quote

5 mA

300 V

1.6V @ 125mA, 1A

5mA

30 @ 1A, 5V

3 W

-

-55°C ~ 200°C (TA)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

JANSF2N2222AUA

Microchip Technology

TRANS NPN 50V 0.8A UA

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 650 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

封装: -

Request a Quote

800 mA

50 V

1V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

650 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

BC817K-16

Diotec Semiconductor

IC

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 500 mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封装: -

Request a Quote

500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 1V

500 mW

170MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

SJ83180

onsemi

BIP T03 NPN SPECIAL

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

2C2060

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

BC857BWE6327

Infineon Technologies

BIPOLAR GEN PURPOSE TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323

封装: -

Request a Quote

100 mA

45 V

650mV @ 5mA, 100mA

15nA (ICBO)

220 @ 2mA, 5V

250 mW

250MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323