页 226 - 晶体管 - 双极 (BJT) - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - 双极 (BJT) - 单

记录 20,307
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图片
零件编号
制造商
描述
封装
库存
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SA1869-Y,Q(J
Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 10W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存3,248
3A
50V
600mV @ 200mA, 2A
1µA (ICBO)
70 @ 500mA, 2V
10W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4488S-YMH-AN
ON Semiconductor

TRANS BIPO NMP

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,976
-
-
-
-
-
-
-
-
-
-
-
BUL146
ON Semiconductor

TRANS NPN 400V 6A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
  • Power - Max: 100W
  • Frequency - Transition: 14MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存4,208
6A
400V
700mV @ 600mA, 3A
100µA
14 @ 500mA, 5V
100W
14MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
2PD601AR,115
NXP

TRANS NPN 50V 0.1A SC-59

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
封装: TO-236-3, SC-59, SOT-23-3
库存4,192
100mA
50V
250mV @ 10mA, 100mA
10nA (ICBO)
210 @ 2mA, 10V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
KSB811GBU
Fairchild/ON Semiconductor

TRANS PNP 25V 1A TO-92S

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 110MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
封装: TO-226-3, TO-92-3 Short Body
库存4,528
1A
25V
500mV @ 100mA, 1A
100nA (ICBO)
200 @ 100mA, 1V
350mW
110MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
hot ZTX869STOA
Diodes Incorporated

TRANS NPN 25V 5A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 5A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
  • Power - Max: 1.2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
封装: E-Line-3
库存24,000
5A
25V
220mV @ 100mA, 5A
50nA (ICBO)
300 @ 1A, 1V
1.2W
100MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
2SB157400L
Panasonic Electronic Components

TRANS PNP 50V 2A U-G2

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 2V
  • Power - Max: 10W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: U-G2
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,488
2A
50V
300mV @ 50mA, 1A
100nA (ICBO)
120 @ 200mA, 2V
10W
80MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
U-G2
2SA07940R
Panasonic Electronic Components

TRANS PNP 100V 0.5A TO-126

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
  • Power - Max: 1.2W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
封装: TO-225AA, TO-126-3
库存6,000
500mA
100V
400mV @ 50mA, 500mA
-
130 @ 150mA, 10V
1.2W
120MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
BCW60FFE6327HTSA1
Infineon Technologies

TRANS NPN 32V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 32V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
  • Power - Max: 330mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封装: TO-236-3, SC-59, SOT-23-3
库存4,832
100mA
32V
550mV @ 1.25mA, 50mA
20nA (ICBO)
250 @ 2mA, 5V
330mW
250MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
2N4261
Microsemi Corporation

TRANS PNP 15V 0.03A TO-72

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
封装: TO-72-3 Metal Can
库存3,328
30mA
15V
350mV @ 1mA, 10mA
10µA (ICBO)
30 @ 10mA, 1V
200mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
2SB1205S-E
ON Semiconductor

TRANS PNP 20V 5A TP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 320MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存3,376
5A
20V
500mV @ 60mA, 3A
500nA (ICBO)
140 @ 500mA, 2V
1W
320MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
PBSS5230QAZ
Nexperia USA Inc.

TRANS PNP 30V 2A DFN1010D-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
  • Power - Max: 325mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1010D-3
封装: 3-XDFN Exposed Pad
库存7,568
2A
30V
210mV @ 50mA, 1A
100nA (ICBO)
60 @ 2A, 2V
325mW
170MHz
150°C (TJ)
Surface Mount
3-XDFN Exposed Pad
DFN1010D-3
hot STN951
STMicroelectronics

TRANS PNP 60V 5A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
  • Power - Max: 1.6W
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封装: TO-261-4, TO-261AA
库存94,104
5A
60V
500mV @ 200mA, 5A
100nA (ICBO)
150 @ 2A, 1V
1.6W
130MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2SB07890RL
Panasonic Electronic Components

TRANS PNP 100V 0.5A MINI-PWR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F1
封装: TO-243AA
库存5,232
500mA
100V
600mV @ 50mA, 500mA
-
130 @ 150mA, 10V
1W
120MHz
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F1
hot BC32740TA
Fairchild/ON Semiconductor

TRANS PNP 45V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存168,000
800mA
45V
700mV @ 50mA, 500mA
100nA
250 @ 100mA, 1V
625mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2SC2713-BL,LF
Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236
封装: TO-236-3, SC-59, SOT-23-3
库存115,128
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
350 @ 2mA, 6V
150mW
100MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236
hot 2SAR523EBTL
Rohm Semiconductor

TRANS PNP 50V 0.1A EMT3F

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: EMT3F (SOT-416FL)
封装: SC-89, SOT-490
库存165,600
100mA
50V
400mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
150mW
300MHz
150°C (TJ)
Surface Mount
SC-89, SOT-490
EMT3F (SOT-416FL)
NTE2337
NTE Electronics, Inc

TRANS NPN 500V 7A TO220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7 A
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 4A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
  • Power - Max: 2 W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: -
Request a Quote
7 A
500 V
1V @ 800mA, 4A
100µA (ICBO)
15 @ 100mA, 5V
2 W
20MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220
2SC1623-L5-TP-HF
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: -
Request a Quote
100 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
135 @ 1mA, 6V
200 mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SD2202R
onsemi

POWER BIPOLAR TRANSISTOR NPN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220ML
封装: -
Request a Quote
5 A
80 V
400mV @ 300mA, 3A
100µA (ICBO)
100 @ 1A, 2V
2 W
20MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220ML
MNS2N2222AUBP
Microchip Technology

TRANS NPN 50V 0.8A UB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
BC868-25-QX
Nexperia USA Inc.

TRANS NPN 20V 2A SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
  • Power - Max: 500 mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封装: -
Request a Quote
2 A
20 V
600mV @ 200mA, 2A
100nA (ICBO)
160 @ 500mA, 1V
500 mW
170MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
KTD1898-GR-TP
Micro Commercial Co

TRANS NPN 80V 1A SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V
  • Power - Max: 500 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封装: -
Request a Quote
1 A
80 V
400mV @ 20mA, 500mA
1µA (ICBO)
200 @ 500mA, 3V
500 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89
JANTXV2N5660U3
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
  • Current - Collector Cutoff (Max): 200nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
  • Power - Max: 2 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U3
封装: -
Request a Quote
2 A
200 V
800mV @ 400mA, 2A
200nA
40 @ 500mA, 5V
2 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U3
NSC1163
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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2N4231
Microchip Technology

PNP TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
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JANSP2N2369AU
Microchip Technology

RH DUAL - SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: U
封装: -
Request a Quote
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15 V
450mV @ 10mA, 100mA
400nA
40 @ 10mA, 1V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
U
2N6582
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 125 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AD (TO-3)
封装: -
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10 A
350 V
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-
125 W
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-
Through Hole
TO-204AA, TO-3
TO-204AD (TO-3)
TIP31ATU_F129
onsemi

TRANS NPN 60V 3A TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 2 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封装: -
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3 A
60 V
1.2V @ 375mA, 3A
300µA
10 @ 3A, 4V
2 W
3MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
2SA1481E-AC
onsemi

BIP PNP 0.15A 50V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
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