页 21 - 晶体管 - 双极 (BJT) - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BCW66KHB6327HTLA1	Infineon Technologies	TRANS NPN 45V 0.8A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 500mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存2,384	800mA	45V	450mV @ 50mA, 500mA	20nA (ICBO)	250 @ 100mA, 1V	500mW	170MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BC 808-25 E6433	Infineon Technologies	TRANS PNP 25V 0.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存6,512	500mA	25V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	330mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
2SB1457(T6DW,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存2,528	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
TIP31C-S	Bourns Inc.	TRANS NPN 100V 3A Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 40W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	封装: TO-220-3	库存7,584	3A	100V	1.2V @ 375mA, 3A	300µA	10 @ 3A, 4V	40W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
PN2907A_J61Z	Fairchild/ON Semiconductor	TRANS PNP 60V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	库存7,472	800mA	60V	1.6V @ 50mA, 500mA	20nA (ICBO)	100 @ 150mA, 10V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC337-025	ON Semiconductor	TRANS NPN 45V 0.8A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 210MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA)	库存4,288	800mA	45V	700mV @ 50mA, 500mA	100nA	160 @ 100mA, 1V	625mW	210MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJP5021OTU	Fairchild/ON Semiconductor	TRANS NPN 500V 5A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 500V Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V Power - Max: 50W Frequency - Transition: 18MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	封装: TO-220-3	库存6,336	5A	500V	1V @ 600mA, 3A	10µA (ICBO)	20 @ 600mA, 5V	50W	18MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BC141-16	STMicroelectronics	TRANS NPN 60V 1A TO-39 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 650mW Frequency - Transition: 50MHz Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	封装: TO-205AD, TO-39-3 Metal Can	库存3,472	1A	60V	1V @ 100mA, 1A	100nA	100 @ 100mA, 1V	650mW	50MHz	175°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
ZTX951STOB	Diodes Incorporated	TRANS PNP 60V 4A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 400mA, 4A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 1.2W Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	封装: E-Line-3, Formed Leads	库存4,320	4A	60V	300mV @ 400mA, 4A	50nA (ICBO)	100 @ 1A, 1V	1.2W	120MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
ZTX757STOA	Diodes Incorporated	TRANS PNP 300V 0.5A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 30MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	封装: E-Line-3, Formed Leads	库存5,840	500mA	300V	500mV @ 10mA, 100mA	100nA (ICBO)	50 @ 100mA, 5V	1W	30MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
TIP110	STMicroelectronics	TRANS NPN DARL 60V 2A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封装: TO-220-3	库存106,032	2A	60V	2.5V @ 8mA, 2A	2mA	1000 @ 1A, 4V	2W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2SB143400A	Panasonic Electronic Components	TRANS PNP 50V 2A MT-2 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 2V Power - Max: 1W Frequency - Transition: 110MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: MT-2-A1	封装: 3-SIP	库存2,912	2A	50V	300mV @ 50mA, 1A	-	120 @ 200mA, 2V	1W	110MHz	150°C (TJ)	Through Hole	3-SIP	MT-2-A1
2N3585	Central Semiconductor Corp	TRANS NPN 300V 2A TO-66 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V Power - Max: 35W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66	封装: TO-213AA, TO-66-2	库存8,712	2A	300V	750mV @ 125mA, 1A	5mA	25 @ 1A, 10V	35W	10MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66
BD17516STU	Fairchild/ON Semiconductor	TRANS NPN 45V 3A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 30W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	封装: TO-225AA, TO-126-3	库存15,564	3A	45V	800mV @ 100mA, 1A	100µA (ICBO)	100 @ 150mA, 2V	30W	3MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
MJ11012G	ON Semiconductor	TRANS NPN DARL 60V 30A TO-3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V Power - Max: 200W Frequency - Transition: 4MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	封装: TO-204AA, TO-3	库存6,336	30A	60V	4V @ 300mA, 30A	1mA	1000 @ 20A, 5V	200W	4MHz	-55°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
NJT4031NT1G	ON Semiconductor	TRANS NPN 40V 3A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V Power - Max: 2W Frequency - Transition: 215MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封装: TO-261-4, TO-261AA	库存658,680	3A	40V	300mV @ 300mA, 3A	100nA (ICBO)	200 @ 1A, 1V	2W	215MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BC859A-AQ	Diotec Semiconductor	IC Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封装: -	Request a Quote	100 mA	30 V	650mV @ 5mA, 100mA	15nA (ICBO)	125 @ 2mA, 5V	250 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2N5682E4	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	封装: -	Request a Quote	1 A	120 V	1V @ 50mA, 500mA	10µA	40 @ 250mA, 2V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
NJVTIP31G	onsemi	BIP TO-220 NPN 3A 100V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BCP54-16TF	Nexperia USA Inc.	BCP54-16T/SOT223/SC-73 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 1.3 W Frequency - Transition: 155MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封装: -	Request a Quote	1 A	45 V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	1.3 W	155MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2SD1579-T-AZ	Renesas	2SD1579-T-AZ - SMALL SIGNAL BIPO Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 1 W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: -	封装: -	Request a Quote	1.5 A	80 V	1.5V @ 1mA, 1A	1mA	2000 @ 1A, 2V	1 W	60MHz	150°C (TJ)	Through Hole	3-SSIP	-
BSS64E6327	Infineon Technologies	TRANS NPN 80V 0.8A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 400µA, 4mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4mA, 1V Power - Max: 330 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: -	Request a Quote	800 mA	80 V	700mV @ 400µA, 4mA	100nA (ICBO)	20 @ 4mA, 1V	330 mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NST846BMX2T5G	onsemi	TRANS NPN 65V 0.1A 3X2DFN Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 225 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 3-X2DFN (1x0.6)	封装: -	库存22,998	100 mA	65 V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	225 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	0402 (1006 Metric)	3-X2DFN (1x0.6)
2N6294	Microchip Technology	POWER BJT Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 50 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	封装: -	Request a Quote	4 A	60 V	3V @ 40mA, 4A	500µA	750 @ 2A, 3V	50 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
JANKCBR2N3439	Microchip Technology	TRANS NPN 350V 1A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	封装: -	Request a Quote	1 A	350 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
HCPL4502SDM	Fairchild Semiconductor	OPTOCOUPLER DC-IN 1-CH TRANSISTO Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SD1368CCTL	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Power - Max: 1 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: UPAK	封装: -	Request a Quote	1 A	50 V	300mV @ 100mA, 1A	100nA (ICBO)	250 @ 100mA, 2V	1 W	100MHz	150°C (TJ)	Surface Mount	TO-243AA	UPAK
BC847CWHE3-TP	Micro Commercial Co	NPN TRANSISTORS, SOT-323 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 150MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封装: -	库存18,000	100 mA	45 V	500mV @ 5mA, 100mA	100nA (ICBO)	420 @ 2mA, 5V	200 mW	150MHz	-65°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2C3507	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2C5154	Microchip Technology	TRANSISTOR POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BCW66KHB6327HTLA1

Infineon Technologies

TRANS NPN 45V 0.8A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 500mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存2,384

800mA

45V

450mV @ 50mA, 500mA

20nA (ICBO)

250 @ 100mA, 1V

500mW

170MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BC 808-25 E6433

Infineon Technologies

TRANS PNP 25V 0.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 330mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存6,512

500mA

25V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

330mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

2SB1457(T6DW,F,M)

Toshiba Semiconductor and Storage

TRANS PNP 2A 100V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Power - Max: 900mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存2,528

2A

100V

1.5V @ 1mA, 1A

10µA (ICBO)

2000 @ 1A, 2V

900mW

50MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

TIP31C-S

Bourns Inc.

TRANS NPN 100V 3A

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

封装: TO-220-3

库存7,584

3A

100V

1.2V @ 375mA, 3A

300µA

10 @ 3A, 4V

40W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

PN2907A_J61Z

Fairchild/ON Semiconductor

TRANS PNP 60V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存7,472

800mA

60V

1.6V @ 50mA, 500mA

20nA (ICBO)

100 @ 150mA, 10V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC337-025

ON Semiconductor

TRANS NPN 45V 0.8A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 210MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

库存4,288

800mA

45V

700mV @ 50mA, 500mA

100nA

160 @ 100mA, 1V

625mW

210MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

FJP5021OTU

Fairchild/ON Semiconductor

TRANS NPN 500V 5A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
Power - Max: 50W
Frequency - Transition: 18MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

封装: TO-220-3

库存6,336

5A

500V

1V @ 600mA, 3A

10µA (ICBO)

20 @ 600mA, 5V

50W

18MHz

150°C (TJ)

Through Hole

TO-220-3

BC141-16

STMicroelectronics

TRANS NPN 60V 1A TO-39

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 650mW
Frequency - Transition: 50MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

封装: TO-205AD, TO-39-3 Metal Can

库存3,472

1A

60V

1V @ 100mA, 1A

100nA

100 @ 100mA, 1V

650mW

50MHz

175°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

ZTX951STOB

Diodes Incorporated

TRANS PNP 60V 4A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 1.2W
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

封装: E-Line-3, Formed Leads

库存4,320

4A

60V

300mV @ 400mA, 4A

50nA (ICBO)

100 @ 1A, 1V

1.2W

120MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

ZTX757STOA

Diodes Incorporated

TRANS PNP 300V 0.5A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 30MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

封装: E-Line-3, Formed Leads

库存5,840

500mA

300V

500mV @ 10mA, 100mA

100nA (ICBO)

50 @ 100mA, 5V

1W

30MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

TIP110

STMicroelectronics

TRANS NPN DARL 60V 2A TO-220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封装: TO-220-3

库存106,032

2A

60V

2.5V @ 8mA, 2A

2mA

1000 @ 1A, 4V

2W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2SB143400A

Panasonic Electronic Components

TRANS PNP 50V 2A MT-2

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 2V
Power - Max: 1W
Frequency - Transition: 110MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: MT-2-A1

封装: 3-SIP

库存2,912

2A

50V

300mV @ 50mA, 1A

-

120 @ 200mA, 2V

1W

110MHz

150°C (TJ)

Through Hole

3-SIP

MT-2-A1

2N3585

Central Semiconductor Corp

TRANS NPN 300V 2A TO-66

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
Power - Max: 35W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66

封装: TO-213AA, TO-66-2

库存8,712

2A

300V

750mV @ 125mA, 1A

5mA

25 @ 1A, 10V

35W

10MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66

BD17516STU

Fairchild/ON Semiconductor

TRANS NPN 45V 3A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

封装: TO-225AA, TO-126-3

库存15,564

3A

45V

800mV @ 100mA, 1A

100µA (ICBO)

100 @ 150mA, 2V

30W

3MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

MJ11012G

ON Semiconductor

TRANS NPN DARL 60V 30A TO-3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Power - Max: 200W
Frequency - Transition: 4MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

封装: TO-204AA, TO-3

库存6,336

30A

60V

4V @ 300mA, 30A

1mA

1000 @ 20A, 5V

200W

4MHz

-55°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

NJT4031NT1G

ON Semiconductor

TRANS NPN 40V 3A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Power - Max: 2W
Frequency - Transition: 215MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

库存658,680

3A

40V

300mV @ 300mA, 3A

100nA (ICBO)

200 @ 1A, 1V

2W

215MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BC859A-AQ

Diotec Semiconductor

IC

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封装: -

Request a Quote

100 mA

30 V

650mV @ 5mA, 100mA

15nA (ICBO)

125 @ 2mA, 5V

250 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2N5682E4

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

封装: -

Request a Quote

1 A

120 V

1V @ 50mA, 500mA

10µA

40 @ 250mA, 2V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

NJVTIP31G

onsemi

BIP TO-220 NPN 3A 100V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

BCP54-16TF

Nexperia USA Inc.

BCP54-16T/SOT223/SC-73

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.3 W
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封装: -

Request a Quote

1 A

45 V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

1.3 W

155MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2SD1579-T-AZ

Renesas

2SD1579-T-AZ - SMALL SIGNAL BIPO

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Power - Max: 1 W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SSIP
Supplier Device Package: -

封装: -

Request a Quote

1.5 A

80 V

1.5V @ 1mA, 1A

1mA

2000 @ 1A, 2V

1 W

60MHz

150°C (TJ)

Through Hole

3-SSIP

-

BSS64E6327

Infineon Technologies

TRANS NPN 80V 0.8A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 400µA, 4mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4mA, 1V
Power - Max: 330 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: -

Request a Quote

800 mA

80 V

700mV @ 400µA, 4mA

100nA (ICBO)

20 @ 4mA, 1V

330 mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NST846BMX2T5G

onsemi

TRANS NPN 65V 0.1A 3X2DFN

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 225 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: 3-X2DFN (1x0.6)

封装: -

库存22,998

100 mA

65 V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

225 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

0402 (1006 Metric)

3-X2DFN (1x0.6)

2N6294

Microchip Technology

POWER BJT

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 50 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

封装: -

Request a Quote

4 A

60 V

3V @ 40mA, 4A

500µA

750 @ 2A, 3V

50 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

JANKCBR2N3439

Microchip Technology

TRANS NPN 350V 1A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

封装: -

Request a Quote

1 A

350 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

HCPL4502SDM

Fairchild Semiconductor

OPTOCOUPLER DC-IN 1-CH TRANSISTO

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

2SD1368CCTL

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Power - Max: 1 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: UPAK

封装: -

Request a Quote

1 A

50 V

300mV @ 100mA, 1A

100nA (ICBO)

250 @ 100mA, 2V

1 W

100MHz

150°C (TJ)

Surface Mount

TO-243AA

UPAK

BC847CWHE3-TP

Micro Commercial Co

NPN TRANSISTORS, SOT-323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 200 mW
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封装: -

库存18,000

100 mA

45 V

500mV @ 5mA, 100mA

100nA (ICBO)

420 @ 2mA, 5V

200 mW

150MHz

-65°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2C3507

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

2C5154

Microchip Technology

TRANSISTOR POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-