页 97 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-10WQ045FNTRLPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 10A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 630mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: 760pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存4,528	45V	10A	630mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	760pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 175°C
S2GHE3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存171,600	400V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RGP30JHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-201AD, Axial	库存7,520	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
STTH2R02QRL	STMicroelectronics	DIODE GEN PURP 200V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 3µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: 175°C (Max)	封装: DO-204AC, DO-15, Axial	库存3,824	200V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	3µA @ 200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	175°C (Max)
S3G-13	Diodes Incorporated	DIODE GEN PURP 400V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AB, SMC	库存72,000	400V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
VS-301UA200	Vishay Semiconductor Diodes Division	DIODE GP 2KV 330A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 330A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	封装: DO-205AB, DO-9, Stud	库存6,624	2000V	330A	1.46V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
MURS340-E3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-214AB, SMC	库存7,248	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 175°C
BYT51A-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 50V 1.5A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	封装: SOD-57, Axial	库存5,152	50V	1.5A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 50V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
SSA24HE3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AC, SMA	库存4,096	40V	2A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
F1T7G A1G	TSC America Inc.	DIODE, FAST, 1A, 1000V, 500NS, T Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封装: T-18, Axial	库存2,752	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S1DLHMHG	TSC America Inc.	DIODE, 1A, 200V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-219AB	库存2,624	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
MA3X15800L	Panasonic Electronic Components	DIODE GEN PURP 200V 100MA MINI3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1 Operating Temperature - Junction: 125°C (Max)	封装: TO-236-3, SC-59, SOT-23-3	库存528,492	200V	100mA	1.3V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 200V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1	125°C (Max)
1N2138AR	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 60A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-203AB, DO-5, Stud	库存7,788	600V	60A	1.1V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
NSR05F40NXT5G	ON Semiconductor	DIODE SCHOTTKY 40V 500MA 2DSN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 460mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: 2-DSN (1x.60) Operating Temperature - Junction: 150°C (Max)	封装: 2-XDFN	库存3,840	40V	500mA (DC)	460mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	75µA @ 40V	-	Surface Mount	2-XDFN	2-DSN (1x.60)	150°C (Max)
HERAF1008GH	Taiwan Semiconductor Corporation	80NS, 10A, 1000V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 1 kV Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存3,000	1000 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 1 kV	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
NTE576-6	NTE Electronics, Inc	DIODE GEN PURP 600V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	600 V	5A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	75pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 125°C
HSD226KRF-E	Renesas Electronics Corporation	DIODE SCHOTTKY 25V 50MA 2SFP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25 V Current - Average Rectified (Io): 50mA Voltage - Forward (Vf) (Max) @ If: 380 mV @ 5 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 450 nA @ 20 V Capacitance @ Vr, F: 2.8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: 2-SFP Operating Temperature - Junction: 125°C (Max)	封装: -	Request a Quote	25 V	50mA	380 mV @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	450 nA @ 20 V	2.8pF @ 1V, 1MHz	Surface Mount	2-SMD, Flat Lead	2-SFP	125°C (Max)
BAS21-HE3_A-18	Vishay	SWITCHING DIODE GENPURP SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C	封装: -	Request a Quote	200 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C
SD0805S040S1R0	KYOCERA AVX	DIODE SCHOTTKY 40V 1A 0805 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Surface Mount	0805 (2012 Metric)	0805	-55°C ~ 125°C
VSSAF5L45HM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 5A DO221AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 650 µA @ 45 V Capacitance @ Vr, F: 740pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C	封装: -	库存37,485	45 V	5A	560 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	650 µA @ 45 V	740pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 150°C
IDK08G65C5XTMA2	Infineon Technologies	DIODE SIL CARB 650V 8A TO263-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存3,000	650 V	8A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	-	250pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
SS14L	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	封装: -	库存88,377	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 40 V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS54BF-HF	Comchip Technology	DIODE SCHOTTKY 40V 5A SMBF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 800pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	40 V	5A	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	800pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
85HF05	Solid State Inc.	DIODE GEN PURP 50V 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -	封装: -	Request a Quote	50 V	85A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-
BYV29D-600PJ	WeEn Semiconductors	DIODE GEN PURP 600V 9A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max)	封装: -	库存65,562	600 V	9A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	175°C (Max)
BAS70W-QF	Nexperia USA Inc.	BAS70W-Q/SOT323/SC-70 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 70mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 70 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: 150°C	封装: -	Request a Quote	70 V	70mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 70 V	2pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	150°C
SMD34LHE1-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 3A SOD123HE1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 120 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE1 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	40 V	3A	450 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 40 V	-	Surface Mount	SOD-123H	SOD-123HE1	-55°C ~ 150°C
SK62L-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 20 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	20 V	6A	650 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
MUR315SB	Taiwan Semiconductor Corporation	25NS, 3A, 150V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存18,000	200 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 200 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
1N1191	Solid State Inc.	DIODE GEN PURP 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	-	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C

VS-10WQ045FNTRLPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: 760pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,528

45V

10A

630mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

760pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 175°C

S2GHE3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存171,600

400V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 400V

16pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RGP30JHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-201AD, Axial

库存7,520

600V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

STTH2R02QRL

STMicroelectronics

DIODE GEN PURP 200V 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 3µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)

封装: DO-204AC, DO-15, Axial

库存3,824

200V

2A

1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

3µA @ 200V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

175°C (Max)

S3G-13

Diodes Incorporated

DIODE GEN PURP 400V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AB, SMC

库存72,000

400V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 150°C

VS-301UA200

Vishay Semiconductor Diodes Division

DIODE GP 2KV 330A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 330A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

封装: DO-205AB, DO-9, Stud

库存6,624

2000V

330A

1.46V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

MURS340-E3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214AB, SMC

库存7,248

400V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 400V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-65°C ~ 175°C

BYT51A-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 50V 1.5A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

封装: SOD-57, Axial

库存5,152

50V

1.5A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 50V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

SSA24HE3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AC, SMA

库存4,096

40V

2A

490mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

F1T7G A1G

TSC America Inc.

DIODE, FAST, 1A, 1000V, 500NS, T

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封装: T-18, Axial

库存2,752

-

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

S1DLHMHG

TSC America Inc.

DIODE, 1A, 200V, AEC-Q101, SUB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-219AB

库存2,624

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 200V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

MA3X15800L

Panasonic Electronic Components

DIODE GEN PURP 200V 100MA MINI3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Operating Temperature - Junction: 125°C (Max)

封装: TO-236-3, SC-59, SOT-23-3

库存528,492

200V

100mA

1.3V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 200V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

125°C (Max)

1N2138AR

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 60A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-203AB, DO-5, Stud

库存7,788

600V

60A

1.1V @ 60A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

NSR05F40NXT5G

ON Semiconductor

DIODE SCHOTTKY 40V 500MA 2DSN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 460mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: 2-DSN (1x.60)
Operating Temperature - Junction: 150°C (Max)

封装: 2-XDFN

库存3,840

40V

500mA (DC)

460mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

75µA @ 40V

-

Surface Mount

2-XDFN

2-DSN (1x.60)

150°C (Max)

HERAF1008GH

Taiwan Semiconductor Corporation

80NS, 10A, 1000V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1 kV
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存3,000

1000 V

10A

1.7 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

80 ns

10 µA @ 1 kV

60pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

NTE576-6

NTE Electronics, Inc

DIODE GEN PURP 600V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

Request a Quote

600 V

5A

1.7 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

75pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 125°C

HSD226KRF-E

Renesas Electronics Corporation

DIODE SCHOTTKY 25V 50MA 2SFP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25 V
Current - Average Rectified (Io): 50mA
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 5 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 450 nA @ 20 V
Capacitance @ Vr, F: 2.8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: 2-SFP
Operating Temperature - Junction: 125°C (Max)

封装: -

Request a Quote

25 V

50mA

380 mV @ 5 mA

Small Signal =< 200mA (Io), Any Speed

-

450 nA @ 20 V

2.8pF @ 1V, 1MHz

Surface Mount

2-SMD, Flat Lead

2-SFP

125°C (Max)

BAS21-HE3_A-18

Vishay

SWITCHING DIODE GENPURP SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

200 V

200mA

1.25 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 200 V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

150°C

SD0805S040S1R0

KYOCERA AVX

DIODE SCHOTTKY 40V 1A 0805

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

40 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 40 V

-

Surface Mount

0805 (2012 Metric)

0805

-55°C ~ 125°C

VSSAF5L45HM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 5A DO221AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 650 µA @ 45 V
Capacitance @ Vr, F: 740pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

库存37,485

45 V

5A

560 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

650 µA @ 45 V

740pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-40°C ~ 150°C

IDK08G65C5XTMA2

Infineon Technologies

DIODE SIL CARB 650V 8A TO263-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存3,000

650 V

8A

1.8 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

-

250pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

SS14L

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A SUB SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

库存88,377

40 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 40 V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 125°C

SS54BF-HF

Comchip Technology

DIODE SCHOTTKY 40V 5A SMBF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

40 V

5A

550 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

800pF @ 4V, 1MHz

Surface Mount

DO-221AA, SMB Flat Leads

SMBF

-55°C ~ 150°C

85HF05

Solid State Inc.

DIODE GEN PURP 50V 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -

封装: -

Request a Quote

50 V

85A

-

Standard Recovery >500ns, > 200mA (Io)

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-

BYV29D-600PJ

WeEn Semiconductors

DIODE GEN PURP 600V 9A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)

封装: -

库存65,562

600 V

9A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

175°C (Max)

BAS70W-QF

Nexperia USA Inc.

BAS70W-Q/SOT323/SC-70

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 70mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

70 V

70mA

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 70 V

2pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

150°C

SMD34LHE1-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 3A SOD123HE1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 120 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE1
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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40 V

3A

450 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

120 µA @ 40 V

-

Surface Mount

SOD-123H

SOD-123HE1

-55°C ~ 150°C

SK62L-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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20 V

6A

650 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 20 V

200pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

MUR315SB

Taiwan Semiconductor Corporation

25NS, 3A, 150V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存18,000

200 V

3A

900 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

5 µA @ 200 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

1N1191

Solid State Inc.

DIODE GEN PURP 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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-

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C