页 765 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC06D60F6	Infineon Technologies	DIODE GEN PURP 600V 15A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	封装: Die	库存6,336	600V	15A (DC)	1.6V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
CN4157 BK	Central Semiconductor Corp	DIODE MULTI CHIP 20V DO-35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 2.66V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AH, DO-35, Axial	库存3,792	20V	-	2.66V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 20V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
GP10QHM3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1200V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存6,704	1200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1200V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
SK33/TR13	Microsemi Corporation	DIODE SCHOTTKY 30V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AB, SMC	库存2,752	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 125°C
R9G22612CSOO	Powerex Inc.	DIODE MODULE 2.6KV 1200A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2600V Current - Average Rectified (Io): 1200A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 75mA @ 2600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封装: DO-200AB, B-PUK	库存6,624	2600V	1200A	2.3V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	4µs	75mA @ 2600V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
MURF550PFG	ON Semiconductor	DIODE GEN PURP 520V 5A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 520V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95ns Current - Reverse Leakage @ Vr: 5µA @ 520V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-220-2 Full Pack	库存207,108	520V	5A	1.15V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	95ns	5µA @ 520V	-	Through Hole	TO-220-2 Full Pack	TO-220FP	-65°C ~ 175°C
BAS70ZFILM	STMicroelectronics	DIODE SCHOTTKY 70V 70MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 70V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max)	封装: SOD-123	库存108,000	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 70V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
S400Q	GeneSiC Semiconductor	DIODE GEN PURP 1.2KV 400A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	封装: DO-205AB, DO-9, Stud	库存6,896	1200V	400A	1.2V @ 400A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-60°C ~ 200°C
SK220-LTP	Micro Commercial Co	DIODE SCHOTTKY 200V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 200V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AA, SMB	库存3,888	200V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 200V	170pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SRT115HA0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封装: T-18, Axial	库存6,272	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16GHA1G	TSC America Inc.	DIODE, SUPER FAST, 1A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封装: T-18, Axial	库存3,504	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
ES1JL M2G	TSC America Inc.	DIODE, SUPER FAST, 1A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存4,448	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAS34-TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 60V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1nA @ 30V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	封装: DO-204AH, DO-35, Axial	库存2,224	60V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	1nA @ 30V	3pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N4448WS-E3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	封装: SC-76, SOD-323	库存2,912	75V	150mA	720mV @ 5mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	-	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
SS36LW RVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123W	库存3,344	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
MBR3545	GeneSiC Semiconductor	DIODE SCHOTTKY 45V 35A DO4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 680mV @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存7,056	45V	35A	680mV @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 20V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
RU 3AMV1	Sanken	DIODE GEN PURP 600V 1.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存7,344	600V	1.5A	1.1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
ST10150	SMC Diode Solutions	DIODE SCHOTTKY 150V TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存14,004	150V	-	1.2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 150V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
FERD20U50DJF-TR	STMicroelectronics	DIODE GEN PURP 50V 20A POWERFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 510mV @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6) Operating Temperature - Junction: 150°C (Max)	封装: 8-PowerVDFN	库存4,272	50V	20A	510mV @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	800µA @ 50V	-	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)	150°C (Max)
SBR10B45P5-13	Diodes Incorporated	DIODE SBR 45V 10A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 380µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	封装: PowerDI? 5	库存7,280	45V	10A	550mV @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	380µA @ 45V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
GR1M	Good-Ark Semiconductor	RECTIFIER, FAST RECOVERY, 1A, 10 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 7.6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存89,625	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	7.6pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
TPMR6J	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存21,882	600 V	6A	1.8 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	10 µA @ 600 V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
VS-3EJU06-M3-6B	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 3A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 3 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	3A	1.35 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	3 µA @ 600 V	-	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 175°C
ER2J_R1_00001	Panjit International Inc.	DIODE GEN PURP 600V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存14,100	600 V	2A	1.7 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 600 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
1N6677-TR	Microchip Technology	DIODE SCHOTTKY 40V 200MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 40 V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	40 V	200mA	500 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 40 V	50pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 125°C
JANTX1N5711-1-TR	Microchip Technology	DIODE SCHOTTKY 50V 33MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 33mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	50 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 150°C
NTS560MFST3G	onsemi	DIODE SCHOTTKY 60V 5A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 55 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	60 V	5A	600 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	55 µA @ 60 V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 150°C
VSS8D5M10HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTT 100V 2.3A SLIMSMAW Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2.3A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 100 V Capacitance @ Vr, F: 480pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	库存46,719	100 V	2.3A	580 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 100 V	480pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-40°C ~ 175°C
HER156GH	Taiwan Semiconductor Corporation	75NS, 1.5A, 600V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存10,500	600 V	1.5A	1.7 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
25FR80	Solid State Inc.	DIODE GEN PURP 800V 25A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	800 V	25A	1.2 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C

SIDC06D60F6

Infineon Technologies

DIODE GEN PURP 600V 15A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

封装: Die

库存6,336

600V

15A (DC)

1.6V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 150°C

CN4157 BK

Central Semiconductor Corp

DIODE MULTI CHIP 20V DO-35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 2.66V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AH, DO-35, Axial

库存3,792

20V

-

2.66V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 20V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 150°C

GP10QHM3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1200V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存6,704

1200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 1200V

7pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

SK33/TR13

Microsemi Corporation

DIODE SCHOTTKY 30V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AB, SMC

库存2,752

30V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 125°C

R9G22612CSOO

Powerex Inc.

DIODE MODULE 2.6KV 1200A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2600V
Current - Average Rectified (Io): 1200A
Voltage - Forward (Vf) (Max) @ If: 2.3V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 75mA @ 2600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封装: DO-200AB, B-PUK

库存6,624

2600V

1200A

2.3V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

4µs

75mA @ 2600V

-

Chassis Mount

DO-200AB, B-PUK

-

MURF550PFG

ON Semiconductor

DIODE GEN PURP 520V 5A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 520V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95ns
Current - Reverse Leakage @ Vr: 5µA @ 520V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-220-2 Full Pack

库存207,108

520V

5A

1.15V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

95ns

5µA @ 520V

-

Through Hole

TO-220-2 Full Pack

TO-220FP

-65°C ~ 175°C

BAS70ZFILM

STMicroelectronics

DIODE SCHOTTKY 70V 70MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 70V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)

封装: SOD-123

库存108,000

70V

70mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 70V

2pF @ 0V, 1MHz

Surface Mount

SOD-123

150°C (Max)

S400Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 400A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 200°C

封装: DO-205AB, DO-9, Stud

库存6,896

1200V

400A

1.2V @ 400A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-60°C ~ 200°C

SK220-LTP

Micro Commercial Co

DIODE SCHOTTKY 200V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 200V
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AA, SMB

库存3,888

200V

2A

900mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 200V

170pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

SRT115HA0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封装: T-18, Axial

库存6,272

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

SFT16GHA1G

TSC America Inc.

DIODE, SUPER FAST, 1A, 400V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封装: T-18, Axial

库存3,504

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

10pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

ES1JL M2G

TSC America Inc.

DIODE, SUPER FAST, 1A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存4,448

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 600V

8pF @ 1V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

BAS34-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 60V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1nA @ 30V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

封装: DO-204AH, DO-35, Axial

库存2,224

60V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

1nA @ 30V

3pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

1N4448WS-E3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

封装: SC-76, SOD-323

库存2,912

75V

150mA

720mV @ 5mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

-

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 150°C

SS36LW RVG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD123W
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123W

库存3,344

60V

3A

700mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 60V

-

Surface Mount

SOD-123W

SOD123W

-55°C ~ 150°C

MBR3545

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 35A DO4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存7,056

45V

35A

680mV @ 35A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 20V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 150°C

RU 3AMV1

Sanken

DIODE GEN PURP 600V 1.5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存7,344

600V

1.5A

1.1V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 600V

-

Through Hole

Axial

-

-40°C ~ 150°C

ST10150

SMC Diode Solutions

DIODE SCHOTTKY 150V TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存14,004

150V

-

1.2V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 150V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

FERD20U50DJF-TR

STMicroelectronics

DIODE GEN PURP 50V 20A POWERFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)
Operating Temperature - Junction: 150°C (Max)

封装: 8-PowerVDFN

库存4,272

50V

20A

510mV @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

800µA @ 50V

-

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

150°C (Max)

SBR10B45P5-13

Diodes Incorporated

DIODE SBR 45V 10A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 380µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

封装: PowerDI? 5

库存7,280

45V

10A

550mV @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

380µA @ 45V

-

Surface Mount

PowerDI? 5

PowerDI?5

-55°C ~ 150°C

GR1M

Good-Ark Semiconductor

RECTIFIER, FAST RECOVERY, 1A, 10

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 7.6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存89,625

1000 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 1000 V

7.6pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

TPMR6J

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 6A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存21,882

600 V

6A

1.8 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

40 ns

10 µA @ 600 V

60pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

VS-3EJU06-M3-6B

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

600 V

3A

1.35 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

3 µA @ 600 V

-

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-55°C ~ 175°C

ER2J_R1_00001

Panjit International Inc.

DIODE GEN PURP 600V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存14,100

600 V

2A

1.7 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 600 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

1N6677-TR

Microchip Technology

DIODE SCHOTTKY 40V 200MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

Request a Quote

40 V

200mA

500 mV @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

5 µA @ 40 V

50pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 125°C

JANTX1N5711-1-TR

Microchip Technology

DIODE SCHOTTKY 50V 33MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 33mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

50 V

33mA

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

-

200 nA @ 50 V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 150°C

NTS560MFST3G

onsemi

DIODE SCHOTTKY 60V 5A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 55 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

60 V

5A

600 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

55 µA @ 60 V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 150°C

VSS8D5M10HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTT 100V 2.3A SLIMSMAW

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2.3A
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Capacitance @ Vr, F: 480pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

库存46,719

100 V

2.3A

580 mV @ 2.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 100 V

480pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SlimSMAW (DO-221AD)

-40°C ~ 175°C

HER156GH

Taiwan Semiconductor Corporation

75NS, 1.5A, 600V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存10,500

600 V

1.5A

1.7 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 600 V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

25FR80

Solid State Inc.

DIODE GEN PURP 800V 25A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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800 V

25A

1.2 V @ 25 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 800 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C