图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micro Commercial Co |
DIODE SCHOTTKY 20V 2A SOD123HE
|
封装: SOD-123H |
库存4,864 |
|
20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
||
Powerex Inc. |
DIODE MODULE 1.2KV 300A
|
封装: Module |
库存7,168 |
|
1200V | 300A (DC) | 1.5V @ 300A | Standard Recovery >500ns, > 200mA (Io) | 800ns | 40mA @ 1200V | - | Chassis Mount | Module | Module | - |
||
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 10A TO220-2
|
封装: TO-220-2 |
库存272,172 |
|
600V | 10A | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 340pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE MODULE 1KV 2100A DO200AB
|
封装: DO-200AB, B-PUK |
库存7,200 |
|
1000V | 2100A | 1.55V @ 6000A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 1000V | - | Chassis Mount | DO-200AB, B-PUK | DO-200AB, B-PUK | - |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 12A TO277A
|
封装: TO-277, 3-PowerDFN |
库存3,696 |
|
30V | 12A | 560mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 930pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 2A DO204AC
|
封装: DO-204AC, DO-15, Axial |
库存4,304 |
|
300V | 2A | 1.25V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 45pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A SMA
|
封装: DO-214AC, SMA |
库存5,792 |
|
600V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Comchip Technology |
DIODE GEN PURP 200V 2A DO214AA
|
封装: DO-214AA, SMB |
库存5,808 |
|
200V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 150°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE SW 1A 600V 250NS DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存3,568 |
|
600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO214AA
|
封装: DO-214AA, SMB |
库存5,712 |
|
400V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 100V,
|
封装: DO-204AL, DO-41, Axial |
库存4,736 |
|
100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD123
|
封装: SOD-123 |
库存2,640 |
|
30V | 200mA (DC) | 650mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 125°C (Max) |
||
TSC America Inc. |
DIODE, SWITCHING & ARRAY, 0.2A,
|
封装: SC-70, SOT-323 |
库存4,544 |
|
250V | 200mA | 1.25V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 250V | 5pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SOT-323 | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, 1.5A, 800V, SOD-123W
|
封装: SOD-123W |
库存3,296 |
|
800V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO214AB
|
封装: DO-214AB, SMC |
库存2,149,560 |
|
40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 125°C |
||
Sanken |
DIODE GEN PURP 1KV 800MA AXIAL
|
封装: Axial |
库存50,616 |
|
1000V | 800mA | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
||
Microchip Technology |
DIODE GEN PURP 600V 4A B AXIAL
|
封装: - |
Request a Quote |
|
600 V | 4A | 1.1 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 5 µA @ 600 V | 160pF @ 0V, 1MHz | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |
||
Diotec Semiconductor |
DIODE SCHOT 100V 3A DO214AC SMA
|
封装: - |
库存39,051 |
|
100 V | 3A | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | Surface Mount | DO-214AC, SMA | SMA/DO-214AC | -50°C ~ 150°C |
||
Comchip Technology |
DIODE GEN PURP 200V 3A DO214AB
|
封装: - |
Request a Quote |
|
200 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
||
Micro Commercial Co |
SCHOTTKY DIODES
|
封装: - |
Request a Quote |
|
200 V | 2A | 900 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 200 V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
||
Microchip Technology |
DIODE GEN PURP 100V 15A TO254
|
封装: - |
Request a Quote |
|
100 V | 15A | 1.2 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 100 V | 150pF @ 10V, 1MHz | Through Hole | TO-254-3, TO-254AA | TO-254 | - |
||
Microchip Technology |
DIODE GEN PURP 150V 850MA
|
封装: - |
Request a Quote |
|
150 V | 850mA | 2.04 V @ 9.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 150 V | - | Through Hole | A, Axial | A, Axial | -65°C ~ 155°C |
||
Micro Commercial Co |
Interface
|
封装: - |
Request a Quote |
|
60 V | 8A | 700 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | 380pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
||
IXYS |
DIODE GEN PURP 3.5KV 3753A W54
|
封装: - |
Request a Quote |
|
3500 V | 3753A | 1.27 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | 37 µs | 100 mA @ 3500 V | - | Clamp On | DO-200AC, K-PUK | W54 | -40°C ~ 160°C |
||
Panjit International Inc. |
DIODE GEN PURP 600V 1A SMAF-C
|
封装: - |
库存9,000 |
|
600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 600 V | 10pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF-C | -55°C ~ 150°C |
||
Microchip Technology |
STD RECTIFIER
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Bourns Inc. |
DIODE GEN PURP 200V 1A 2SMD
|
封装: - |
库存3,699 |
|
200 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 12pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
||
Microchip Technology |
DIODE GEN PURP 50V 8A TO257
|
封装: - |
Request a Quote |
|
50 V | 8A | 1.06 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 40 V | 150pF @ 5V, 1MHz | Through Hole | TO-257-3 | TO-257 | - |
||
Renesas Electronics Corporation |
DIODE FOR HIGH SPEED SWITCHING
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Central Semiconductor Corp |
DIODE SCHOTTKY 40V 1A SOT23F
|
封装: - |
Request a Quote |
|
40 V | 1A | 400 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 900 µA @ 40 V | 50pF @ 10V, 1MHz | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | -65°C ~ 125°C |