页 691 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

记录 52,788
页  691/1,760
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制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IDC04S60CEX1SA1
Infineon Technologies

DIODE SIC 600V 4A SAWN WAFER

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: Die
库存2,544
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
130pF @ 1V, 1MHz
Surface Mount
Die
Die
-55°C ~ 175°C
BAS 40 B5003
Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 1µA @ 30V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-236-3, SC-59, SOT-23-3
库存2,592
40V
120mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
100ps
1µA @ 30V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
-55°C ~ 150°C
GP10N-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存5,440
-
-
-
-
-
-
-
-
-
-
-
RB085B-40GTL
Rohm Semiconductor

DIODE SCHOTTKY SSOP3

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存2,288
-
-
-
-
-
-
-
-
-
-
-
RL106-N-2-1-BP
Micro Commercial Co

DIODE GEN PURP 800V 1A A-405

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial, Radial Bend
  • Supplier Device Package: A-405
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: Axial, Radial Bend
库存7,072
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
Axial, Radial Bend
A-405
-55°C ~ 150°C
VS-80EPF02PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 80A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 190ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-247-3
库存6,880
200V
80A
1.25V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
190ns
100µA @ 200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
SBLB8L40HE3/81
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 8A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 125°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,104
40V
8A
500mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 125°C
RS2GA-13
Diodes Incorporated

DIODE GEN PURP 400V 1.5A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-214AC, SMA
库存2,128
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
IDW40G65C5FKSA1
Infineon Technologies

DIODE SCHOTTKY 650V 40A TO247-3

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 40A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.4mA @ 650V
  • Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-247-3
库存7,360
650V
40A (DC)
1.7V @ 40A
No Recovery Time > 500mA (Io)
0ns
1.4mA @ 650V
1140pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
IDD12SG60CXTMA1
Infineon Technologies

DIODE SCHOTTKY 600V 12A TO252-3

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 310pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,504
600V
12A (DC)
2.1V @ 12A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
310pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
VS-41HF40
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 40A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 190°C
封装: DO-203AB, DO-5, Stud
库存5,568
400V
40A
1.3V @ 125A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 400V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 190°C
FESB16CT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 16A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,632
150V
16A
975mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
175pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
BYW172F-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 300V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 1µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存2,896
300V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
1µA @ 300V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
VS-3EGH06-M3/5BT
Vishay Semiconductor Diodes Division

DIODE FRED SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-214AA, SMB
库存5,056
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
3µA @ 600V
-
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 175°C
1N6478HE3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-213AB, MELF (Glass)
库存3,920
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
RS2K-M3/52T
Vishay Semiconductor Diodes Division

DIODE SW 1.5A 800V 500NS DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AA, SMB
库存5,040
800V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
17pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
MUR105SHM4G
TSC America Inc.

DIODE, ULTRA FAST, 1A, 50V, 25NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-214AA, SMB
库存6,336
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
2µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
CD0603-B00340
Bourns Inc.

DIODE SCHOTTKY 40V 30MA 0603

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 30mA
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 40V
  • Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0603 (1608 Metric)
  • Supplier Device Package: 0603
  • Operating Temperature - Junction: -40°C ~ 125°C
封装: 0603 (1608 Metric)
库存4,224
40V
30mA
370mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 40V
1.5pF @ 1V, 1MHz
Surface Mount
0603 (1608 Metric)
0603
-40°C ~ 125°C
CDSV4148-G
Comchip Technology

DIODE GEN PURP 75V 150MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-76, SOD-323
库存5,216
75V
150mA
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
125°C (Max)
1N4151WS-E3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 150MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 50nA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: SC-76, SOD-323
库存3,888
50V
150mA
1V @ 50mA
Small Signal =< 200mA (Io), Any Speed
4ns
50nA @ 50V
-
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 150°C
hot AU1PG-M3/84A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1A DO220AA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: 11pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-220AA
库存348,000
400V
1A
1.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 400V
11pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
SF1608G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 16A TO220AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存2,700
600 V
16A
1.7 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 600 V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
PU1JLS
Taiwan Semiconductor Corporation

25NS, 1A, 600V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 28 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123H
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存60,000
600 V
1A
1.5 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
28 ns
1 µA @ 600 V
17pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123H
-55°C ~ 150°C
LSIC2SD120E15CC
Littelfuse Inc.

DIODE SIC 1.2KV 24.5A TO247AD

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 24.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 454pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存1,350
1200 V
24.5A
1.8 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 1200 V
454pF @ 1V, 1MHz
Through Hole
TO-247-3
TO-247AD
-55°C ~ 175°C
BAS316-DG-B4F
Nexperia USA Inc.

DIODE GEN PURP 100V 250MA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: 150°C (Max)
封装: -
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100 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
500 nA @ 80 V
1.5pF @ 0V, 1MHz
Surface Mount
-
-
150°C (Max)
SMBD1466LT1
onsemi

SS SOT23 SWCH DIO SPCL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SG-10LZ23S
Sanken Electric USA Inc.

DIODE FOR ALTERNATOR (SURFACE MO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 17 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Gull Wing
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
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17 V
30A
1.2 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface Mount
2-SMD, Gull Wing
-
-40°C ~ 150°C
SRT15
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 1A TS-1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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50 V
1A
700 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 50 V
80pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SF38GE-TP
Micro Commercial Co

RECTIFIERS

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NRTS15100PFST3G
onsemi

DIODE SCHOTTKY 100V 15A TO277-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Capacitance @ Vr, F: 1150pf @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存12,714
100 V
15A
810 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 100 V
1150pf @ 1V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277-3
-55°C ~ 175°C