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零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MA2SD300GL	Panasonic Electronic Components	DIODE SCHOTTKY 30V 100MA SSMINI2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 2µA @ 30V Capacitance @ Vr, F: 9pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SSMini2-F4 Operating Temperature - Junction: 125°C (Max)	封装: SC-79, SOD-523	库存684,000	30V	100mA	580mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1ns	2µA @ 30V	9pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SSMini2-F4	125°C (Max)
MUR480E	ON Semiconductor	DIODE GEN PURP 800V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 25µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-201AA, DO-27, Axial	库存6,192	800V	4A	1.85V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	25µA @ 800V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
B330B-13	Diodes Incorporated	DIODE SCHOTTKY 30V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存93,276	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
HFA90NH40R	Vishay Semiconductor Diodes Division	DIODE MODULE 400V 90A HALF-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 90A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 90A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 6µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	封装: D-67 HALF-PAK	库存7,360	400V	90A	1.3V @ 90A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	6µA @ 400V	-	Chassis Mount	D-67 HALF-PAK	HALF-PAK	-
MUR7010R	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-203AB, DO-5, Stud	库存5,776	100V	70A	1V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 150°C
S70KR	GeneSiC Semiconductor	DIODE GEN PURP REV 800V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C	封装: DO-203AB, DO-5, Stud	库存4,592	800V	70A	1.1V @ 70A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 180°C
FMG-14S	Sanken	DIODE GEN PURP 400V 5A TO220-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2V @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 500µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220-3 Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-220-3 Full Pack	库存6,816	400V	5A	2V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	500µA @ 400V	-	Through Hole	TO-220-3 Full Pack	TO-220-3	-40°C ~ 150°C
SJPL-D2V	Sanken	DIODE GEN PURP 200V 1A SJP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C	封装: 2-SMD, J-Lead	库存4,752	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	25µA @ 200V	-	Surface Mount	2-SMD, J-Lead	SJP	-40°C ~ 150°C
ES2FHR5G	TSC America Inc.	DIODE, SUPER FAST, 2A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存3,840	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS310LHRVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存7,776	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
FR304-TP	Micro Commercial Co	DIODE GEN PURP 400V DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存4,208	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ES1JL RQG	TSC America Inc.	DIODE, SUPER FAST, 1A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存6,096	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFDLHRQG	TSC America Inc.	DIODE, FAST, 0.5A, 200V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存3,024	200V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CDBF0140R-HF	Comchip Technology	DIODE SCHOTTKY 40V 100MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	封装: 1005 (2512 Metric)	库存6,400	40V	100mA	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	6pF @ 10V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
AR1PJ-M3/84A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 1A DO220AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-220AA	库存2,624	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 600V	12.5pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
PMEG4005AEV,115	Nexperia USA Inc.	DIODE SCHOTTKY 40V 500MA SOT666 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: 50pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666 Operating Temperature - Junction: -65°C ~ 150°C	封装: SOT-563, SOT-666	库存3,232	40V	500mA (DC)	470mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	50pF @ 1V, 1MHz	Surface Mount	SOT-563, SOT-666	SOT-666	-65°C ~ 150°C
FSV20120V	Fairchild/ON Semiconductor	DIODE SCHOTTKY 120V 20A TO277-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 790mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-277, 3-PowerDFN	库存4,656	120V	20A	790mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	35µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 150°C
NSR0230P2T5G	ON Semiconductor	DIODE SCHOTTKY 30V 200MA SOD923 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 125°C	封装: SOD-923	库存2,340,720	30V	200mA (DC)	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 10V	-	Surface Mount	SOD-923	SOD-923	-55°C ~ 125°C
BAV19W-E3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 250MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 100V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max)	封装: SOD-123	库存108,492	100V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 100V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
STPS4S200S	STMicroelectronics	DIODE RECT SCHOTTKY 200V 4A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 870mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: 175°C (Max)	封装: DO-214AB, SMC	库存42,858	200V	4A	870mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	SMC	175°C (Max)
SGL41-40-E3/96	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-213AB, MELF	库存612,000	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 125°C
JANS1N5417US	Microchip Technology	DIODE GEN PURP 200V 3A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 150 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
1N647UR-1-TR	Microchip Technology	DIODE GP 400V 400MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 nA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	400 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 400 V	-	Surface Mount	DO-213AA (Glass)	DO-213AA	-65°C ~ 175°C
MBRB16H60HE3_B-P	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	60 V	16A	730 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
1N4723-TR	Microchip Technology	DIODE GEN PURP 600V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	600 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 600 V	-	Through Hole	Axial	Axial	-65°C ~ 175°C
RHRD660S9A-S2515P	onsemi	DIODE AVALANCHE 600V 6A TO252AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	600 V	6A	2.1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	100 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-65°C ~ 175°C
BY255-AQ	Diotec Semiconductor	DIODE GEN PURP 1.3KV 3A DO201 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	1300 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1.3 V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201	-50°C ~ 150°C
CGRTS4003-HF	Comchip Technology	DIODE GP 200V 1A TS/SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: TS/SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	6pF @ 4V, 1MHz	Surface Mount	SOD-123F	TS/SOD-123FL	-55°C ~ 150°C
VS-8ETH06-1-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A TO262AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	600 V	8A	2.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	50 µA @ 600 V	-	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262AA	-65°C ~ 175°C
VS-MUR1520-M3	Vishay General Semiconductor - Diodes Division	DIODE GP 200V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	封装: -	库存39,051	200 V	15A	1.05 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C

MA2SD300GL

Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA SSMINI2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 2µA @ 30V
Capacitance @ Vr, F: 9pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SSMini2-F4
Operating Temperature - Junction: 125°C (Max)

封装: SC-79, SOD-523

库存684,000

30V

100mA

580mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

1ns

2µA @ 30V

9pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SSMini2-F4

125°C (Max)

MUR480E

ON Semiconductor

DIODE GEN PURP 800V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-201AA, DO-27, Axial

库存6,192

800V

4A

1.85V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

25µA @ 800V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 175°C

B330B-13

Diodes Incorporated

DIODE SCHOTTKY 30V 3A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存93,276

30V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

200pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

HFA90NH40R

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 90A HALF-PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 90A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 90A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 6µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

封装: D-67 HALF-PAK

库存7,360

400V

90A

1.3V @ 90A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

6µA @ 400V

-

Chassis Mount

D-67 HALF-PAK

HALF-PAK

-

MUR7010R

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-203AB, DO-5, Stud

库存5,776

100V

70A

1V @ 70A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

25µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-55°C ~ 150°C

S70KR

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C

封装: DO-203AB, DO-5, Stud

库存4,592

800V

70A

1.1V @ 70A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 180°C

FMG-14S

Sanken

DIODE GEN PURP 400V 5A TO220-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2V @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 500µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-220-3 Full Pack

库存6,816

400V

5A

2V @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

500µA @ 400V

-

Through Hole

TO-220-3 Full Pack

TO-220-3

-40°C ~ 150°C

SJPL-D2V

Sanken

DIODE GEN PURP 200V 1A SJP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C

封装: 2-SMD, J-Lead

库存4,752

200V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

25µA @ 200V

-

Surface Mount

2-SMD, J-Lead

SJP

-40°C ~ 150°C

ES2FHR5G

TSC America Inc.

DIODE, SUPER FAST, 2A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存3,840

300V

2A

1.3V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 300V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SS310LHRVG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存7,776

100V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

FR304-TP

Micro Commercial Co

DIODE GEN PURP 400V DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存4,208

400V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

10µA @ 400V

65pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

ES1JL RQG

TSC America Inc.

DIODE, SUPER FAST, 1A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存6,096

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 600V

8pF @ 1V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

RSFDLHRQG

TSC America Inc.

DIODE, FAST, 0.5A, 200V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存3,024

200V

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

CDBF0140R-HF

Comchip Technology

DIODE SCHOTTKY 40V 100MA 1005

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: 125°C (Max)

封装: 1005 (2512 Metric)

库存6,400

40V

100mA

450mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

6pF @ 10V, 1MHz

Surface Mount

1005 (2512 Metric)

1005/SOD-323F

125°C (Max)

AR1PJ-M3/84A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1A DO220AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-220AA

库存2,624

600V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 600V

12.5pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

PMEG4005AEV,115

Nexperia USA Inc.

DIODE SCHOTTKY 40V 500MA SOT666

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: 50pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Operating Temperature - Junction: -65°C ~ 150°C

封装: SOT-563, SOT-666

库存3,232

40V

500mA (DC)

470mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

50pF @ 1V, 1MHz

Surface Mount

SOT-563, SOT-666

SOT-666

-65°C ~ 150°C

FSV20120V

Fairchild/ON Semiconductor

DIODE SCHOTTKY 120V 20A TO277-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-277, 3-PowerDFN

库存4,656

120V

20A

790mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

35µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277-3

-55°C ~ 150°C

NSR0230P2T5G

ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD923

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C

封装: SOD-923

库存2,340,720

30V

200mA (DC)

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 10V

-

Surface Mount

SOD-923

-55°C ~ 125°C

BAV19W-E3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 250MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 100V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)

封装: SOD-123

库存108,492

100V

250mA (DC)

1.25V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 100V

1.5pF @ 0V, 1MHz

Surface Mount

SOD-123

150°C (Max)

STPS4S200S

STMicroelectronics

DIODE RECT SCHOTTKY 200V 4A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 870mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)

封装: DO-214AB, SMC

库存42,858

200V

4A

870mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 200V

-

Surface Mount

DO-214AB, SMC

SMC

175°C (Max)

SGL41-40-E3/96

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-213AB, MELF

库存612,000

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

110pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

DO-213AB

-55°C ~ 125°C

JANS1N5417US

Microchip Technology

DIODE GEN PURP 200V 3A B SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

1 µA @ 150 V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C

1N647UR-1-TR

Microchip Technology

DIODE GP 400V 400MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 nA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

400 V

400mA

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

50 nA @ 400 V

-

Surface Mount

DO-213AA (Glass)

DO-213AA

-65°C ~ 175°C

MBRB16H60HE3_B-P

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

60 V

16A

730 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

1N4723-TR

Microchip Technology

DIODE GEN PURP 600V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

600 V

3A

1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

25 µA @ 600 V

-

Through Hole

Axial

-65°C ~ 175°C

RHRD660S9A-S2515P

onsemi

DIODE AVALANCHE 600V 6A TO252AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

600 V

6A

2.1 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

100 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

-65°C ~ 175°C

BY255-AQ

Diotec Semiconductor

DIODE GEN PURP 1.3KV 3A DO201

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1300 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

Request a Quote

1300 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 1.3 V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201

-50°C ~ 150°C

CGRTS4003-HF

Comchip Technology

DIODE GP 200V 1A TS/SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: TS/SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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200 V

1A

1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

6pF @ 4V, 1MHz

Surface Mount

SOD-123F

TS/SOD-123FL

-55°C ~ 150°C

VS-8ETH06-1-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 8A TO262AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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600 V

8A

2.4 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

50 µA @ 600 V

-

Through Hole

TO-262-3 Long Leads, I2PAK, TO-262AA

TO-262AA

-65°C ~ 175°C

VS-MUR1520-M3

Vishay General Semiconductor - Diodes Division

DIODE GP 200V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

库存39,051

200 V

15A

1.05 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C