页 425 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N5820-B	Diodes Incorporated	DIODE SCHOTTKY 20V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AD, Axial	库存30,000	20V	3A	475mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
EGP50BHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 5A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 95pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AA, DO-27, Axial	库存2,144	100V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	95pF @ 4V, 1MHz	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
BYW100-200	STMicroelectronics	DIODE GEN PURP 200V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 4.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: 150°C (Max)	封装: DO-204AC, DO-15, Axial	库存167,892	200V	1.5A	1.2V @ 4.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	150°C (Max)
ES2CA-13	Diodes Incorporated	DIODE GEN PURP 150V 2A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存336,000	150V	2A	920mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
20ETF10FP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 20A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220AC Full Pack Operating Temperature - Junction: -	封装: TO-220-2 Full Pack	库存7,920	1000V	20A	1.31V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	100µA @ 1000V	-	Through Hole	TO-220-2 Full Pack	TO-220AC Full Pack	-
UGB5HT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 5A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 30µA @ 500V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,232	500V	5A	1.75V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	30µA @ 500V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
SFF1004GA C0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 200V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-3 Full Pack, Isolated Tab	库存4,448	200V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SSB43LHE3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 4A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 490mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AA, SMB	库存5,600	30V	4A	490mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
SS39HR7G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存5,040	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SJPL-H6VL	Sanken	DIODE GEN PURP 600V 2A SJP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 150°C	封装: 2-SMD, J-Lead	库存7,328	600V	2A	1.5V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 600V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 150°C
1N5817G	ON Semiconductor	DIODE SCHOTTKY 20V 1A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-204AL, DO-41, Axial	库存17,580	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 125°C
DFLS120LQ-7	Diodes Incorporated	DIODE SCHOTTKY 20V 1A POWERDI123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 75pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -55°C ~ 125°C	封装: POWERDI?123	库存3,040	20V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	75pF @ 10V, 1MHz	Surface Mount	POWERDI?123	PowerDI? 123	-55°C ~ 125°C
RB521G-30HF	Comchip Technology	DIODE SCHOTTKY 30V 100MA SOD723 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-723 Supplier Device Package: SOD-723 Operating Temperature - Junction: 125°C (Max)	封装: SOD-723	库存45,828	30V	100mA	350mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 10V	-	Surface Mount	SOD-723	SOD-723	125°C (Max)
RGF1M	Fairchild/ON Semiconductor	DIODE GEN PURP 1KV 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-214AC, SMA	库存576,000	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	8.5pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 175°C
1N4448W-7-F	Diodes Incorporated	DIODE GEN PURP 75V 250MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C	封装: SOD-123	库存1,720,248	75V	250mA	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	2.5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
ZLLS400TA-79	Diodes Incorporated	DIODE SCHOTTKY 40V 520MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 520mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 10 µA @ 30 V Capacitance @ Vr, F: 15pF @ 30V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C	封装: -	Request a Quote	40 V	520mA	500 mV @ 400 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	10 µA @ 30 V	15pF @ 30V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C
S3120	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
FESF16FTHE3_A-P	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 300V 16A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	300 V	16A	1.3 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
TST20L120CW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 120V 10A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 120 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	120 V	10A	930 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 120 V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
CD647	Microchip Technology	DIODE GEN PURP 480V 400MA DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 480 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 nA @ 400 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	480 V	400mA	1 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50 nA @ 400 V	20pF @ 4V, 1MHz	Surface Mount	Die	Die	-65°C ~ 175°C
SD200SA60B-T2	SMC Diode Solutions	DIODE SCHOTTKY 60V 60A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6 mA @ 60 V Capacitance @ Vr, F: 2400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	60 V	60A	680 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 60 V	2400pF @ 5V, 1MHz	Surface Mount	Die	Die	-55°C ~ 150°C
BAV21W-AU_R1_000A1	Panjit International Inc.	DIODE GEN PURP 200V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存117,249	200 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
ES2GSMA	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 3 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	400 V	3A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	3 µA @ 400 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
1N1185A	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	150 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 150 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 200°C
JANTXV1N5819-1-TR	Microchip Technology	DIODE SCHOTTKY 45V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 45 V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
AS3BDHM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 200V 3A DO214AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	200 V	3A	1.05 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 600 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
JANTXV1N6841U3	Microchip Technology	DIODE SCHOTTKY 35V 10A U3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 (SMD-0.5) Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	35 V	10A	880 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	3-SMD, No Lead	U3 (SMD-0.5)	-65°C ~ 150°C
R4350	Microchip Technology	DIODE GEN PURP 500V 150A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	500 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 500 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
HS1GH	Taiwan Semiconductor Corporation	50NS, 1A, 400V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存45,000	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N6763R	Microchip Technology	DIODE GEN PURP 100V 12A TO254 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 300pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	100 V	12A	1.05 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 100 V	300pF @ 5V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254	-55°C ~ 175°C

1N5820-B

Diodes Incorporated

DIODE SCHOTTKY 20V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AD, Axial

库存30,000

20V

3A

475mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 20V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

EGP50BHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 5A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AA, DO-27, Axial

库存2,144

100V

5A

950mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

95pF @ 4V, 1MHz

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

BYW100-200

STMicroelectronics

DIODE GEN PURP 200V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 4.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: 150°C (Max)

封装: DO-204AC, DO-15, Axial

库存167,892

200V

1.5A

1.2V @ 4.5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

150°C (Max)

ES2CA-13

Diodes Incorporated

DIODE GEN PURP 150V 2A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存336,000

150V

2A

920mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 150V

25pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

20ETF10FP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 20A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -

封装: TO-220-2 Full Pack

库存7,920

1000V

20A

1.31V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

100µA @ 1000V

-

Through Hole

TO-220-2 Full Pack

TO-220AC Full Pack

-

UGB5HT-E3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 5A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 30µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,232

500V

5A

1.75V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

30µA @ 500V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

SFF1004GA C0G

TSC America Inc.

DIODE, SUPER FAST, 10A, 200V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-3 Full Pack, Isolated Tab

库存4,448

200V

10A

975mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

70pF @ 4V, 1MHz

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

SSB43LHE3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 4A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AA, SMB

库存5,600

30V

4A

490mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 30V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 150°C

SS39HR7G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存5,040

90V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

SJPL-H6VL

Sanken

DIODE GEN PURP 600V 2A SJP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -40°C ~ 150°C

封装: 2-SMD, J-Lead

库存7,328

600V

2A

1.5V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

50µA @ 600V

-

Surface Mount

2-SMD, J-Lead

2-SMD

-40°C ~ 150°C

1N5817G

ON Semiconductor

DIODE SCHOTTKY 20V 1A AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-204AL, DO-41, Axial

库存17,580

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

-

Through Hole

DO-204AL, DO-41, Axial

Axial

-65°C ~ 125°C

DFLS120LQ-7

Diodes Incorporated

DIODE SCHOTTKY 20V 1A POWERDI123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -55°C ~ 125°C

封装: POWERDI?123

库存3,040

20V

1A

360mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

75pF @ 10V, 1MHz

Surface Mount

POWERDI?123

PowerDI? 123

-55°C ~ 125°C

RB521G-30HF

Comchip Technology

DIODE SCHOTTKY 30V 100MA SOD723

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-723
Supplier Device Package: SOD-723
Operating Temperature - Junction: 125°C (Max)

封装: SOD-723

库存45,828

30V

100mA

350mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 10V

-

Surface Mount

SOD-723

125°C (Max)

RGF1M

Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214AC, SMA

库存576,000

1000V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

8.5pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-65°C ~ 175°C

1N4448W-7-F

Diodes Incorporated

DIODE GEN PURP 75V 250MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C

封装: SOD-123

库存1,720,248

75V

250mA

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

2.5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

SOD-123

-65°C ~ 150°C

ZLLS400TA-79

Diodes Incorporated

DIODE SCHOTTKY 40V 520MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 520mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

40 V

520mA

500 mV @ 400 mA

Fast Recovery =< 500ns, > 200mA (Io)

3 ns

10 µA @ 30 V

15pF @ 30V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C

S3120

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

FESF16FTHE3_A-P

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 300V 16A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

300 V

16A

1.3 V @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 300 V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 150°C

TST20L120CW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 120V 10A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

120 V

10A

930 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 120 V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

CD647

Microchip Technology

DIODE GEN PURP 480V 400MA DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 480 V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 nA @ 400 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

480 V

400mA

1 V @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50 nA @ 400 V

20pF @ 4V, 1MHz

Surface Mount

Die

-65°C ~ 175°C

SD200SA60B-T2

SMC Diode Solutions

DIODE SCHOTTKY 60V 60A DIE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6 mA @ 60 V
Capacitance @ Vr, F: 2400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

60 V

60A

680 mV @ 60 A

Fast Recovery =< 500ns, > 200mA (Io)

-

6 mA @ 60 V

2400pF @ 5V, 1MHz

Surface Mount

Die

-55°C ~ 150°C

BAV21W-AU_R1_000A1

Panjit International Inc.

DIODE GEN PURP 200V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存117,249

200 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 200 V

5pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

ES2GSMA

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

Request a Quote

400 V

3A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

3 µA @ 400 V

-

Surface Mount

DO-214AC, SMA

SMA/DO-214AC

-50°C ~ 150°C

1N1185A

Microchip Technology

STANDARD RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

150 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 150 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 200°C

JANTXV1N5819-1-TR

Microchip Technology

DIODE SCHOTTKY 45V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

Request a Quote

45 V

1A

490 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 45 V

70pF @ 5V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 125°C

AS3BDHM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 200V 3A DO214AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

200 V

3A

1.05 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 600 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

JANTXV1N6841U3

Microchip Technology

DIODE SCHOTTKY 35V 10A U3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3 (SMD-0.5)
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

35 V

10A

880 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

Surface Mount

3-SMD, No Lead

U3 (SMD-0.5)

-65°C ~ 150°C

R4350

Microchip Technology

DIODE GEN PURP 500V 150A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

500 V

150A

1.1 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 500 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

HS1GH

Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存45,000

400 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 400 V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N6763R

Microchip Technology

DIODE GEN PURP 100V 12A TO254

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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100 V

12A

1.05 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 100 V

300pF @ 5V, 1MHz

Through Hole

TO-254-3, TO-254AA

TO-254

-55°C ~ 175°C