页 351 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDD03E60BUMA1	Infineon Technologies	DIODE GEN PURP 600V 7.3A TO252-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 7.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 62ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存6,944	600V	7.3A (DC)	2V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	62ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDV02S60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 2A TO220-2FP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: 60pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2 Full Pack	库存3,360	600V	2A (DC)	1.9V @ 2A	No Recovery Time > 500mA (Io)	0ns	15µA @ 600V	60pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
SIDC81D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封装: Die	库存5,296	1200V	100A (DC)	1.9V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
RGP10KHE3/53	Vishay Semiconductor Diodes Division	DIODE SW 1A 800V 500NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存4,992	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4937GPHM3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存3,584	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	12pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
CURMT106-HF	Comchip Technology	DIODE GEN PURP 800V 1A SOD123H Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123H Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123H	库存5,488	800V	1A (DC)	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	70pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123H	-55°C ~ 150°C
DTV32B-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.5KV 10A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 175ns Current - Reverse Leakage @ Vr: 100µA @ 1500V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,088	1500V	10A	1.5V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	175ns	100µA @ 1500V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
RS3GHE3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 44pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存6,496	400V	3A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 400V	44pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
1N5399GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1.5A DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AC, DO-15, Axial	库存4,608	1000V	1.5A	1.4V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
FR805	Diodes Incorporated	DIODE GEN PURP 600V 8A TO220A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220a Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-220-2	库存6,416	600V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220a	-65°C ~ 175°C
VS-86HFR20	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 85A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 180°C	封装: DO-203AB, DO-5, Stud	库存4,160	200V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 180°C
1N3644	Semtech Corporation	MIL, QPL PART, 0.250A. 1500V REC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存3,296	-	-	-	-	-	-	-	-	-	-	-
DSEP60-06AT	IXYS	DIODE GEN PURP 600V 60A TO268AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 650µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	库存6,448	600V	60A	2.04V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	650µA @ 600V	-	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268AA	-55°C ~ 175°C
S16JR	GeneSiC Semiconductor	DIODE GEN REV 600V 16A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-203AA, DO-4, Stud	库存3,536	600V	16A	1.1V @ 16A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	-	-65°C ~ 175°C
VS-8ETU04-1HM3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO262AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 43ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存6,944	400V	8A	1.3V @ 8A	Standard Recovery >500ns, > 200mA (Io)	43ns	10µA @ 400V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262	-55°C ~ 175°C
MS110E3/TR12	Microsemi Corporation	DIODE SCHOTTKY 100V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 830mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存2,624	100V	1A	830mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
SS3H10-M3/9AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 3A 100V DO-214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-214AB, SMC	库存5,584	100V	3A	800mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 175°C
MBR5H150VPA-E1	Diodes Incorporated	DIODE SCHOTTKY 150V 5A DO27 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 920mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: 175°C (Max)	封装: DO-201AA, DO-27, Axial	库存6,160	150V	5A	920mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	8µA @ 150V	-	Through Hole	DO-201AA, DO-27, Axial	DO-27	175°C (Max)
UH2C-E3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-214AA, SMB	库存126,000	150V	2A	1.05V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
RS1ML RQG	TSC America Inc.	DIODE, FAST, 0.8A, 1000V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存3,760	-	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N4595R	GeneSiC Semiconductor	DIODE GEN PURP REV 1.2KV DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	封装: DO-205AA, DO-8, Stud	库存7,840	1200V	150A	1.5V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	4mA @ 1200V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
STPS1L40AY	STMicroelectronics	DIODE SCHOTTKY 40V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -40°C ~ 150°C	封装: DO-214AC, SMA	库存153,480	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	35µA @ 40V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-40°C ~ 150°C
VS-ETL0806-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.07V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 9µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-220-2	库存248,160	600V	8A	1.07V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	9µA @ 600V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
PMEG120G10ELRZ	Nexperia USA Inc.	DIODE SIGE 120V 1A CFP3 Diode Type: SiGe (Silicon Germanium) Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 30 nA @ 120 V Capacitance @ Vr, F: 36pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: CFP3 Operating Temperature - Junction: 175°C	封装: -	Request a Quote	120 V	1A	840 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	30 nA @ 120 V	36pF @ 1V, 1MHz	Surface Mount	SOD-123W	CFP3	175°C
RURD660S9A-F085P	onsemi	DIODE GEN PURP 600V 6A TO252AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 83 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	6A	1.5 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	83 ns	100 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
VS-E5TX1506-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存24	600 V	15A	2.1 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	33 ns	10 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
UFS160GE3-TR13	Microchip Technology	DIODE GEN PURP REV 600V 1A SMBG Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AA, SMB Gull Wing Supplier Device Package: SMBG (DO-215AA) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	20 µA @ 600 V	-	Surface Mount	DO-215AA, SMB Gull Wing	SMBG (DO-215AA)	-55°C ~ 175°C
RB521S-303TTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SS15_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 50V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 50 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存2,397	50 V	1A	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 50 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
1N1127	Solid State Inc.	DIODE GEN PURP 500V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	500 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 500 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C

IDD03E60BUMA1

Infineon Technologies

DIODE GEN PURP 600V 7.3A TO252-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 7.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 62ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存6,944

600V

7.3A (DC)

2V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

62ns

50µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PG-TO252-3

-55°C ~ 175°C

IDV02S60CXKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 2A TO220-2FP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2 Full Pack

库存3,360

600V

2A (DC)

1.9V @ 2A

No Recovery Time > 500mA (Io)

0ns

15µA @ 600V

60pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack

PG-TO220-2 Full Pack

-55°C ~ 175°C

SIDC81D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 100A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封装: Die

库存5,296

1200V

100A (DC)

1.9V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

RGP10KHE3/53

Vishay Semiconductor Diodes Division

DIODE SW 1A 800V 500NS DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存4,992

800V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 800V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

1N4937GPHM3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存3,584

600V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 600V

12pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-50°C ~ 150°C

CURMT106-HF

Comchip Technology

DIODE GEN PURP 800V 1A SOD123H

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123H

库存5,488

800V

1A (DC)

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

70pF @ 4V, 1MHz

Surface Mount

SOD-123H

-55°C ~ 150°C

DTV32B-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.5KV 10A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 175ns
Current - Reverse Leakage @ Vr: 100µA @ 1500V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,088

1500V

10A

1.5V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

175ns

100µA @ 1500V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

RS3GHE3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存6,496

400V

3A

1.3V @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

10µA @ 400V

44pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

1N5399GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1.5A DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AC, DO-15, Axial

库存4,608

1000V

1.5A

1.4V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

FR805

Diodes Incorporated

DIODE GEN PURP 600V 8A TO220A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220a
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-220-2

库存6,416

600V

8A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220a

-65°C ~ 175°C

VS-86HFR20

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 85A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 180°C

封装: DO-203AB, DO-5, Stud

库存4,160

200V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

9mA @ 200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 180°C

1N3644

Semtech Corporation

MIL, QPL PART, 0.250A. 1500V REC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存3,296

-

DSEP60-06AT

IXYS

DIODE GEN PURP 600V 60A TO268AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 650µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

库存6,448

600V

60A

2.04V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

650µA @ 600V

-

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268AA

-55°C ~ 175°C

S16JR

GeneSiC Semiconductor

DIODE GEN REV 600V 16A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AA, DO-4, Stud

库存3,536

600V

16A

1.1V @ 16A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

-

-65°C ~ 175°C

VS-8ETU04-1HM3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO262AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 43ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存6,944

400V

8A

1.3V @ 8A

Standard Recovery >500ns, > 200mA (Io)

43ns

10µA @ 400V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262

-55°C ~ 175°C

MS110E3/TR12

Microsemi Corporation

DIODE SCHOTTKY 100V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 830mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存2,624

100V

1A

830mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 175°C

SS3H10-M3/9AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 100V DO-214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214AB, SMC

库存5,584

100V

3A

800mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

20µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-65°C ~ 175°C

MBR5H150VPA-E1

Diodes Incorporated

DIODE SCHOTTKY 150V 5A DO27

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-27
Operating Temperature - Junction: 175°C (Max)

封装: DO-201AA, DO-27, Axial

库存6,160

150V

5A

920mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

8µA @ 150V

-

Through Hole

DO-201AA, DO-27, Axial

DO-27

175°C (Max)

UH2C-E3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-214AA, SMB

库存126,000

150V

2A

1.05V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 150V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

RS1ML RQG

TSC America Inc.

DIODE, FAST, 0.8A, 1000V, 500NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存3,760

-

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

1N4595R

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

封装: DO-205AA, DO-8, Stud

库存7,840

1200V

150A

1.5V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

4mA @ 1200V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-60°C ~ 200°C

STPS1L40AY

STMicroelectronics

DIODE SCHOTTKY 40V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -40°C ~ 150°C

封装: DO-214AC, SMA

库存153,480

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

35µA @ 40V

-

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-40°C ~ 150°C

VS-ETL0806-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.07V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 9µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-220-2

库存248,160

600V

8A

1.07V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

180ns

9µA @ 600V

-

Through Hole

TO-220-2

-65°C ~ 175°C

PMEG120G10ELRZ

Nexperia USA Inc.

DIODE SIGE 120V 1A CFP3

Diode Type: SiGe (Silicon Germanium)
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: CFP3
Operating Temperature - Junction: 175°C

封装: -

Request a Quote

120 V

1A

840 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

6 ns

30 nA @ 120 V

36pF @ 1V, 1MHz

Surface Mount

SOD-123W

CFP3

175°C

RURD660S9A-F085P

onsemi

DIODE GEN PURP 600V 6A TO252AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 83 ns
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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600 V

6A

1.5 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

83 ns

100 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

VS-E5TX1506-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存24

600 V

15A

2.1 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

33 ns

10 µA @ 600 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

UFS160GE3-TR13

Microchip Technology

DIODE GEN PURP REV 600V 1A SMBG

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Supplier Device Package: SMBG (DO-215AA)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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600 V

1A

1.2 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

20 µA @ 600 V

-

Surface Mount

DO-215AA, SMB Gull Wing

SMBG (DO-215AA)

-55°C ~ 175°C

RB521S-303TTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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-

SS15_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 50V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存2,397

50 V

1A

700 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 50 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

1N1127

Solid State Inc.

DIODE GEN PURP 500V 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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500 V

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 500 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C